EE463
Semiconductor IC Technology
Spring, 2025
Byung Jin Cho
KAIST
elebjcho81@[Link]
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Course Introduction
• Lectures: Monday and Wednesday 10:30 PM to 11:45 PM
• Pre-Requisites: EE362 Semiconductor Devices
• Textbook:
Silicon VLSI Technology: Fundamentals, Practice and Modeling,
by Plummer, Deal and Griffin, Prentice Hall, July 2000
• Instructor : Byung Jin Cho Nano Fab building 515, 042-350-3485
elebjcho81@[Link]
• TA : Seung Hoon Kim Nano Fab building 511, 042-350-5485,
kimtmdgns97@[Link]
Ho Seok Lee hoseok98@[Link]
Jun Tae Kim dus1185@[Link]
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Course Introduction
• Course web site:
• Assessment 10% Class attendance and participation
30% Simulation Project
30% Midterm exam
30% Final exam
• No homework. Self-motivated study
• This course is designed for undergraduate students.
• Exam coverage : Lecture note, Text book, Relevant reference
papers,
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Course Introduction
• References
1) VLSI Technology, 2nd Ed. S. M. Sze, McGraw Hill, 1988
2) ULSI Technology, C. Y. Chang and S. M. Sze, McGraw Hill, 1996
3) Silicon processing for the VLSI era, S. Wolf and Tauber, Lattice Press, Vol. 1-4
4) The science and engineering of microelectronic fabrication, S. A. Cambell,
Oxford University Press, 1996.
5) Journals/Conference Proceedings:
1) IEEE Transactions on Electron Devices
2) IEEE Electron Device Letters
3) IEEE IEDM Conference Proceedings,
4) VLSI Symposium Conference Proceedings
5) Other relevant journals
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Schedule
Week Main Contents Reference
1 Introduction to CMOS Technology Ch 1 and 2
2 Crystal Growth, Wafer Fabrications, Si wafer properties, clean rooms, and cleaning Ch 3 and 4
3 Lithography Chapter 5
4 Thermal Oxidation Chapter 6
5 Solid State Diffusion Chapter 7
6 Ion Implantation Chapter 8
7 Shallow Junction formation Class note
8 Midterm exam
9 Thin Film Deposition Ch 9 and class note
10 Thin Film Deposition Ch 9 and class note
11 Etching Chapter 10
12 Metallization Chapter 11
13 Process Integration Class note
14 Final Exam
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Examples of Si integrated devices
Logic devices
- High Performance (HP) devices: CPU…
- Low Operating Power (LP) devices: notebook…
- Low Standby Power (LSTP) devices: smartphone…
Memory devices
- Nonvolatile memory: Flash…
- DRAM
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History of integrated circuits
• 1947, the 1st Ge transistor at Bell lab. by J. Bardeen, W. Brattin, and W. Shockley
• 1950s, discrete devices
• 1958, Ge integrated circuit, by J. Kilby at Texas Instrument
• 1961, Si integrated circuit by R. Noyce at Fairchild Semiconductor
1958
(Courtesy of TI and Huff, SEMATECH)
Source: Bell labs
Source: Fairchild semiconductor
1st Ge transistor Ge integrated circuit Si integrated circuit
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Scaling Trends
In 1965, Intel co-founder Gordon Moore saw the future. His prediction, now popularly known as
Moore's Law, states that the number of transistors on a chip doubles about every two years.
([Link])
Transistor dimensions scale to improve performance, reduce power
and reduce cost per transistor
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Pitch scaling trend
(Source: IEDM2009 presentation provided by Intel Corporation)
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Cross sections of the modern device
Industry’s 32 nm processor
(Source: IEDM2009 presentation provided by Intel Corporation)
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30 years of scaling
(Source: [Link])
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CMOS Technology Trend
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