STS4DNFS30L
N-CHANNEL 30V - 0.044Ω - 4A SO-8
STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET VDSS RDS(on) ID
30 V < 0.055 Ω 4A
SCHOTTKY IF(AV) VRRM VF(MAX)
3A 30 V 0.51 V
SO-8
DESCRIPTION
This product associates the latest low voltage
INTERNAL SCHEMATIC DIAGRAM
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 30 V
VGS Gate- source Voltage ± 16 V
ID Drain Current (continuous) at TC = 25°C 4 A
ID Drain Current (continuous) at TC = 100°C 2.5 A
IDM (●) Drain Current (pulsed) 16 A
PTOT Total Dissipation at TC = 25°C 2 W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VRRM Repetitive Peak Reverse Voltage 30 V
IF(RMS) RMS Forward Current 20 A
IF(AV) Average Forward Current TL = 125°C 3 A
δ = 0.5
IFSM Surge Non Repetitive Forward Current tp = 10 ms 75 A
Sinusoidal
IRRM Repetitive Peak Reverse Current tp = 2 µs 1 A
F=1 kHz
IRSM Non Repetitive Peak Reverse Current tp = 100 µs 1 A
dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
(•)Pulse width limited by safe operating area
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STS4DNFS30L
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET 62.5 °C/W
Tstg Storage Temperature Range -55 to 150 °C
Tl Junction Temperature -55 to 150 °C
(*) Mounted on FR-4 board (Steady State)
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 30 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C 10 µA
IGSS Gate-body Leakage VGS = ± 16 V ±100 nA
Current (VDS = 0)
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 1 V
RDS(on) Static Drain-source On VGS = 10V, ID = 2 A 0.044 0.055 Ω
Resistance
VGS = 5V, ID = 2 A 0.051 0.065 Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V , ID = 2 A 5 S
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 330 pF
Coss Output Capacitance 90 pF
Crss Reverse Transfer 40 pF
Capacitance
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STS4DNFS30L
ELECTRICAL CHARACTERISTICS (CONTINUED)
1.
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 15 V, ID = 2 A 11 ns
RG = 4.7 Ω VGS = 5 V
tr Rise Time (see test circuit, Figure 1) 100 ns
Qg Total Gate Charge VDD = 24 V, ID = 4 A, 6.5 9 nC
VGS = 5 V
Qgs Gate-Source Charge 3.6 nC
Qgd Gate-Drain Charge 2 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 15 V, ID = 2 A, 25 ns
tf Fall Time RG = 4.7Ω, VGS = 5 V 22 ns
(see test circuit, Figure 1)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 4 A
ISDM (2) Source-drain Current (pulsed) 16 A
VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 1.2 V
trr Reverse Recovery Time ISD = 4 A, di/dt = 100A/µs, 35 ns
VDD = 15 V, Tj = 150°C
Qrr Reverse Recovery Charge 25 nC
(see test circuit, Figure 3)
IRRM Reverse Recovery Current 1.4 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedance
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STS4DNFS30L
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
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STS4DNFS30L
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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STS4DNFS30L
Fig. 1: Switching Times Test Circuit For Fig. 2: Gate Charge test Circuit
Resistive Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
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STS4DNFS30L
SO-8 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M 0.6 0.023
S 8 (max.)
0016023
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STS4DNFS30L
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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