SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

1. AB + --A + 1 =
2. If y = A + AB then find value of y
3.

4. The resistivity of a semiconductor depends upon

a) Size of the atom

b) The nature of atoms
c) Type of bonds
d) Size and types of motion

5.
@
ab
hi
_1

6.
86
3

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

7.

8.
@
ab
hi
_1
86
3

9.

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

10.

11.
@
ab
hi
_1

12.
86
3

13.

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

14.

15.
@
ab

16.
hi
_1
86
3

17. Name of gate

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

18. Name of gate:

19. Name of the gate

a) OR
b) NOR
c) NAND
d) AND

20. Name of gate

@
ab
hi
_1
86
3

21. In the figure shown if A = 1 and B =0 then y will be

a) 0
b) 1
c) 2
d) Any of these

22. The truth table for the following logic circuit is

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

@
ab
hi

23. The semiconductors are generally

_1
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a) Monovalent
b) Divalent
3

c) Trivalent
d) Tetravalent

24. The resistivity of a semiconductor depends upon

a) Size of the atom

b) The nature of atoms
c) Type of bonds
d) Size and types of motion

25. A pure semiconductor has

a) An infinite resistance at 00 C
b) A finite resistance which does not depend upon temperature
c) A finite resistance which increases with temperature
d) A finite resistance which decrease with temperature

26. In semiconductors at a room temperature

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

a) The valence band is partially empty, and the conduction band is partially filled
b) The valence band is completely filled, and the conduction band is partially filled
c) The valence band is completely filled
d) The conduction band is completely empty

27. Choose the only false statement from the following

a) In conductors the valence and conduction bands overlap

b) Substance with energy gap of the order 10 eV are insulators
c) The resistivity of a semi conductor increases with increase in temperature
d) The conductivity of a semiconductor increase with increasing temperature

28. In semiconductors, which of the following relations is correct at thermal equilibrium

@
ab
hi

29. What is the use of P-type & N-type??

_1

30. The impurity atoms with which pure silicon be doped to make a p-type semiconductor are
86

those of
3

a) Phosphorus
b) Antimony
c) Boron
d) Copper

31. The rate of recombination or generation are governed by the law(s) of

a) Mass conservation
b) Electrical neutrality
c) Thermodynamics
d) Chromodynamics

32. An n-type semiconductor is electrically

a) Positive
b) Negative
c) May be positive or negative
d) Neutral

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

33. Pure Si at 500K has equal number of electrons (n e) and holes (nh) concentration of 1.5* 1016
m-3. Doping by indium increase (nh) to 4.5 * 1022 m-3. The doped semiconductor is of

34.
@
ab
hi
_1
86

35. In an intrinsic (pure) semiconductor, the number of conduction electrons is 7 * 1019 per
3

cubic metre. Find the total number of current carries ( electron & holes) in a same
semiconductor of size 1 cm * 1cm * 1 mm.
36. Pure Si at 300K has equal electrons (ne) and holes (nh) concentration of 2 * 1016 per m3.
Doping by indium increase nh to 4 * 1022 per m3. Calculate ne in the doped silicon
37. For a p-type semiconductor which of the following statement is true?

a) Electrons are the majority carries and pentavalent are the dopants
b) Electrons are the majority carrier and trivalent atoms are the dopants
c) Holes are the majority carries and trivalent atoms are the dopants
d) Holes are the majority carries and pentavalent atoms are the dopants

38. In a n-type semiconductor which of the following statement is true?

a) Holes are minority carries and pentavalent atoms are dopants

b) Holes are majority carries and trivalent atoms are dopants
c) Electrons are majority carries end trivalent atoms are dopants
d) Electrons are minority carries and pentavalent atoms are dopants

39. In a p-type semiconductor the majority carries are

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

a) Protons
b) Electrons
c) Holes
d) Neutrons

40. When n-type semiconductor is heated

a) Number of electrons increase while that of holes decrease

b) Number for holes in Grace Whole that of Electrons decrease
c) Number of Electrons and holes remain same
d) None of its drones and holes increase equally

41. The increase in width of the depletion region in a p-n junction diode is due to

a) Forward bias only

b) Reverse bias only
c) Both forward bias and reverse bias
d) Increase in forward current

42. The barrier potential of a p-n junction depends on

@

1. Type of semiconductor
ab

2. Amount of doping
3. Temperature
hi
_1

Which one of the following is correct?

86

a) (1) and (2) only

b) (2) only
3

c) (2) and (3) only

d) (1),(2) and (3)

43. In a p-n junction

a) High potential at n side and low potential at p side

b) High potential at p side and low potential at n side
c) P and n both are at same potential
d) Undetermined

44. Depletion layer consists of

a) Mobile ions
b) Protons
c) Electrons
d) Immobile ions

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

45.

46.
@
ab
hi
_1

47.
86
3

48.

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

49.

50.
@

51. In a p-n junction diode change in temperature due to heating

ab

a) affect only reverse resistance

b) affects only forward resistance
hi

c) does not affect resistance of p-n junction

_1

d) affects the overall V -I characteristics of p-n junction

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52. two ideal diodes are connected to a battery as shown in the

3

circuit. The current supplied by the battery is

a) 0.75 A
b) Zero
c) 0.25 A
d) 0.5 A

53.

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

54. The current in the circuit will be

a) 5/40 A
b) 5/50 A
c) 5/10 A
d) 5/20 A

55. Application of forward bias to p-n junction

a) Widen then depletion zone

b) Increases the potential difference across the depletion zone
c) Increases the number of donors on the n-side
d) Decreases the electric field in the depletion zone

56. Reverse bias applied to a junction diode

a) Lower the potential barrier

b) raises the potential barrier
c) Increase the majority career current
d) Increase the minority career current
@

57. The diode used in the circuit shown in the figure has a
ab

constant voltage drop at 0.5 V at all currents and a

maximum power rating of 100 milli watts. What should
hi

be the value of the resistor R connected in series with

_1

diode for obtaining maximum current

86

a) 6.76 Ω
b) 20 Ω
3

c) 5Ω
d) 5.6 Ω

58. Find current flowing through battery

a) Zero
b) r/2R
c) infinite
d) can’t be calculated

59. find current flowing through resistance

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

60. find

a) I = 5/10 A
b) I = 4/10 A
c) I=0
d) I = 6/10 A

61. Find

62. power loss in diode if diode is 1 second

@
ab

63. find current in Zener

hi
_1
86
3

64.

65.

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

66. If each diode has a forward bias resistance of 25Ω in the below circuit. Which of the
following options is correct:

67. As per the given circuit the value of current through the battery will be
@

68. Two ideal diodes are connected in the network as shown is figure. The equivalence
resistance between A and B is 25 Ω.
ab
hi
_1
86
3

69. In the given figure, each diode has a forward bias resistance of
30 Ω and infinite resistance. In reverse bias. Then current I1 will
be

a) 3.75 A
b) 2.76 A
c) 2.35 A
d) 2A

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

70.

71. A Zener diode, having breakdown voltage equal to

15 V is used in a voltage regulator circuit shown in
figure. The current through the diode is

a) 5 mA
b) 10 mA
c) 15 mA
@

d) 20 mA
ab

72.
hi
_1
86
3

73. What is the value of output voltage V0 in the circuit

shown in the figure?

a) 6V
b) 14 V
c) 20 V
d) 26 V

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

74.

75. An LED is constructed from a p-n junction diode using GaAsP. The energy gap is 1.9 eV. The
wavelength of the light emitted will be equal to

a) 10.4 * 10-26m
@

b) 654 nm
ab

c) 654 A
d) 654 * 10-11m
hi
_1

76. In a p-n junction photo cell the value of the photo-electromotive force produced by
monochromatic light is proportional to
86

a) The barrier voltage at the p-n junction

3

b) The intensity of the light falling on the cell

c) The frequency of the light falling on the cell
d) The voltage applied at the p-n junction

77. In the given circuit the value of current I1 will be --------mA. ( when RL = 1kΩ)

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

78.

79. Choose the correct statement about zener diode

a) It works as a voltage regulator in inverse bias and behaves like simple PN Junction
diode in forward bias
@

b) It works as a voltage regulator in both forward and reverse bias

ab

c) It works a voltage regulator only in forward bias

d) It works as a voltage regulator in forward bias and behaves like simple pn junction diode
hi

in reverse bias
_1

80. Which of the following statement is not correct in the case of light meeting diodes
86

a) It is a heavily doped p-n junction

3

b) It emits light only when it is forward biased

c) It emits light only when it is reversed biased
d) The energy of light limited is equal to a slightly less than the energy gap of the
semiconductor used

Choose the correct answer from the option given below

a) C and d
b) a
c) c
d) b

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

81.

82. A potential barrier of 0.4 V exists across a p-n junction. An electron enters the junction from
the n side with speed of 6.0 * 105 m/s. the speed with which electron enters the p side will
be x/3 * 105 m/s the value of x is ---------. ( given mass of electron = 9 * 10-31 kg, charge on
electron = 1.65 10-19 C)

83.
@
ab
hi
_1
86
3

84.

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

85. The output Y for the inputs A and B of circuit is given by. Truth table of the shown circuit is:

86.
@
ab
hi
_1
86

87.
3

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

88.

89. Identify the operation performed by the circuit given

below

a) AND
b) NOT
c) NAND
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d) OR
ab

90.
hi
_1
86
3

91.

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 SEMICONDUCTOR ELECTRONICS MATERIALS, DEVICES AND SIMPLE CIRCUIT

92.

93.
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ab
hi
_1
86
3

94. In the case of forward biasing of p-n junction which one of the following figures correctly
depicts the direction of flow of carriers ?

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