EE5230 Analog Circuit Design
Chapter 2
Basic MOS Device Physics
Pen-Jui Peng
Department of Electrical Engineering
National Tsing Hua University
1
MOS Device Physics (I)
MOS as switch
MOS Structure
2
MOS Device Physics (II)
Connection of Body (Bulk)
• NMOS
• PMOS
3
Complementary MOS (CMOS) Devices
PMOS inside N-well
4
Symbol of MOS
5
Formation of Inversion Layer (I)
6
Formation of Inversion Layer (II)
7
MOS I/V Characteristics (I)
8
MOS I/V Characteristics (II)
9
MOS I/V Characteristics (III)
1
ID nCox
2
W
L
V
GS VTH VDS VGS VTH
2 2
10
MOS I/V Characteristics (IV)
ID
1
2
nCox
W
L
VGS VTH VDS VGS VTH
2 2
11
Deep Triode Region
Triode Region/ Linear Region
If VDS << 2(VGSVTH)
It can be modeled as a linear resistor
12
MOS in Saturation Region
If VDS > VGSVTH, the channel will be “pinched-off”
13
Current Source ?
14
Transconductance
15
Conception on the Operation Region
16
I/V Characteristics – Summary
17
Second-Order Effects (I)
Body Effect
• Depletion region wider → Qd ↗ → VTH ↗
18
Example
19
Second-Order Effects (II)
Channel-Length Modulation
20
Second-Order Effects (III)
Subthreshold Conduction (VGS<VTH)
• Current still flows in weak inversion.
VGS
ID I0 exp
T
V
21
Layout
MOS Device Layout
Example
22
MOS Device Capacitances (I)
23
MOS Device Capacitances (II)
24
MOS Device Capacitances (III)
Variation of CGS and CGD versus VGS
25
MOS Small-Signal Model (I)
26
MOS Small-Signal Model (II)
27
MOS Small-Signal Model (III)
28
Useful Layout Technique
Reduction of gate resistance by folding.
29