AP60N02BD

20V N-Channel Enhancement Mode MOSFET

Description

The AP60N02BD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=20V ID=60A

RDS(ON) < 6.5mΩ @ VGS=4.5V （Type：4.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID Pack Marking Qty(PCS)

AP60N02BD TO-252-3L AP60N02BD XXX YYYY 2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol Parameter Max. Units

VDSS Drain-Source Voltage 20 V

VGSS Gate-Source Voltage ±12 V

ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V 60 A

ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V 39 A

IDM Pulsed Drain Current note1 200 A

EAS Single Pulsed Avalanche Energy note2 47.6 mJ

PD@TA=25℃ Power Dissipation 37 W

RθJC Thermal Resistance, Junction to Case 4 ℃/W

TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃

1

AP60N02BD RVE1.0 永源微電子科技有限公司

 AP60N02BD
20V N-Channel Enhancement Mode MOSFET

Electrical Characteristics (TC=25℃, unless otherwise noted)

Symbol Parameter Test Condition Min. Typ. Max. Units
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 24 - V
IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V, - - 1.0 μA
IGSS Gate to Body Leakage Current VDS=0V, VGS=±12V - - ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.5 0.7 1.2 V
VGS=4.5V, ID=30A - 4.8 6.5
RDS(on) Static Drain-Source on-Resistance note3 mΩ
VGS=2.5V, ID=20A - 8.2 10
Ciss Input Capacitance - 1832 - pF
VDS=10V, VGS=0V,
Coss Output Capacitance - 289 - pF
f = 1.0MHz
Crss Reverse Transfer Capacitance - 271 - pF
Qg Total Gate Charge - 23 - nC
VDS=10V, ID=30A,
Qgs Gate-Source Charge - 4.5 - nC
VGS=4.5V
Qgd Gate-Drain(“Miller”) Charge - 7.3 - nC
td(on) Turn-on Delay Time - 15 - ns
VDS=10V,
tr Turn-on Rise Time - 37 - ns
ID=30A, RGEN=3Ω,
td(off) Turn-off Delay Time - 52 - ns
VGS =4.5V
tf Turn-off Fall Time - 21 - ns
IS Maximum Continuous Drain to Source Diode Forward Current - - 60 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 210 A

VSD Drain to Source Diode Forward Voltage VGS = 0V, IS=25A - - 1.2 V

Notes:
1、Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2、The test condition is, VDD=10V, VG=4.5V, L=0.5mH, RG=25Ω, IAS=13.8A
3、The data tested by pulsed Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
4、The power dissipation is limited by 150℃ junction temperature 2

AP60N02BD RVE1.0 永源微電子科技有限公司

 AP60N02BD
20V N-Channel Enhancement Mode MOSFET
Typical Characteristics

Figure1: Output Characteristics Figure 2: Typical Transfer Characteristics

Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode Characteristics

Figure 5: Gate Charge Characteristics Figure 6: Capacitance Characteristics

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AP60N02BD RVE1.0 永源微電子科技有限公司

 AP60N02BD
20V N-Channel Enhancement Mode MOSFET

Figure 7: Normalized Breakdown Voltage vs. Figure 8: Normalized on Resistance vs

Junction Temperature Junction Temperature

Figure 9: Maximum Safe Operating Area Figure 10: Maximum Continuous Drain
Current vs. Case
Temperature

Figure.11: Maximum Effective

Transient Thermal Impedance, Junction-to-Case
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AP60N02BD RVE1.0 永源微電子科技有限公司

 AP60N02BD
20V N-Channel Enhancement Mode MOSFET

Package Mechanical Data:TO-252-3L

E A Dimensions
B2 Ref. Millimeters Inches
C2

V1
Min. Typ. Max. Min. Typ. Max.
L

A 2.10 2.50 0.083 0.098

A2 0 0.10 0 0.004
B 0.66 0.86 0.026 0.034
D
H

B2 5.18 5.48 0.202 0.216

C 0.40 0.60 0.016 0.024
C2 0.44 0.58 0.017 0.023
D 5.90 6.30 0.232 0.248
B C D1 5.30REF 0.209REF
G E 6.40 6.80 0.252 0.268
DETAIL A
E1 4.63 0.182
V1 G 4.47 4.67 0.176 0.184
H 9.50 10.70 0.374 0.421
D1

V2

L 1.09 1.21 0.043 0.048

V1 L2 1.35 1.65 0.053 0.065
A2

E1 V1 7° 7°
L2 V2 0° 6° 0° 6°
DETAIL A

TO-252

Reel Spectification-TO-252

B
D
0 P0 P2 Dimensions
T
Ref. Millimeters Inches
E

t1
Min. Typ. Max. Min. Typ. Max.
F

A A W 15.90 16.00 16.10 0.626 0.630 0.634

W

B0

E 1.65 1.75 1.85 0.065 0.069 0.073

D1

F 7.40 7.50 7.60 0.291 0.295 0.299

P1 K0
A0 D0 1.40 1.50 1.60 0.055 0.059 0.063
B B B
D1 1.40 1.50 1.60 0.055 0.059 0.063
5°
20 P0 3.90 4.00 4.10 0.154 0.157 0.161
A A
29

P1 7.90 8.00 8.10 0.311 0.315 0.319

Φ3

P2 1.90 2.00 2.10 0.075 0.079 0.083

A0 6.85 6.90 7.00 0.270 0.271 0.276
Φ13 B0 10.45 10.50 10.60 0.411 0.413 0.417
K0 2.68 2.78 2.88 0.105 0.109 0.113
T 0.24 0.27 0.009 0.011
t1 0.10 0.004
10P0 39.80 40.00 40.20 1.567 1.575 1.583
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AP60N02BD RVE1.0 永源微電子科技有限公司

 AP60N02BD
20V N-Channel Enhancement Mode MOSFET

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6

AP60N02BD RVE1.0 永源微電子科技有限公司

 AP60N02BD
20V N-Channel Enhancement Mode MOSFET

Edition Date Change

Rve1.0 2021/7/28 Initial release

Copyright Attribution“APM-Microelectronice”

AP60N02BD RVE1.0 永源微電子科技有限公司