FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

January 2009
TM
QFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU
800V N-Channel MOSFET

General Description Features

These N-Channel enhancement mode power field effect • 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 35 nC)
planar stripe, DMOS technology. • Low Crss ( typical 13 pF)
This advanced technology has been especially tailored to • Fast switching
minimize on-state resistance, provide superior switching • 100% avalanche tested
performance, and withstand high energy pulse in the • Improved dv/dt capability
avalanche and commutation mode. These devices are well • RoHS Compliant
suited for high efficiency switch mode power supplies.

D
!

◀ ▲
G! ●
●

TO-220 GD S
TO-220F
G DS
FQP Series FQPF Series !
S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQP8N80C FQPF8N80C Units

VDSS Drain-Source Voltage 800 V
ID Drain Current - Continuous (TC = 25°C) 8 8* A
- Continuous (TC = 100°C) 5.1 5.1 * A
IDM Drain Current - Pulsed (Note 1) 32 32 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 850 mJ
IAR Avalanche Current (Note 1) 8 A
EAR Repetitive Avalanche Energy (Note 1) 17.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 178 59 W
- Derate above 25°C 1.43 0.48 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter FQP8N80C FQPF8N80C Units
RθJC Thermal Resistance, Junction-to-Case 0.7 2.1 °C/W
RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

©2009 Fairchild Semiconductor Corporation

[Link]
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 1
 FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 800 V, VGS = 0 V -- -- 10 µA
Zero Gate Voltage Drain Current
VDS = 640 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 4 A -- 1.29 1.55 Ω
On-Resistance
gFS Forward Transconductance VDS = 50 V, ID = 4 A (Note 4) -- 5.6 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1580 2050 pF
Coss Output Capacitance f = 1.0 MHz -- 135 175 pF
Crss Reverse Transfer Capacitance -- 13 17 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 40 90 ns
VDD = 400 V, ID = 8 A,
tr Turn-On Rise Time -- 110 230 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 65 140 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 70 150 ns
Qg Total Gate Charge VDS = 640 V, ID = 8 A, -- 35 45 nC
Qgs Gate-Source Charge VGS = 10 V -- 10 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 14 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 8 A, -- 690 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -- 8.2 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 2 [Link]

 FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Typical Characteristics

VGS
Top : 15.0 V
10.0 V
1
8.0 V
10 7.0 V 1
10
6.5 V
6.0 V
Bottom : 5.5 V o
150 C
ID, Drain Current [A]

ID, Drain Current [A]

o
0
o
25 C -55 C
10
0
10

※ Notes :
1. 250μ s Pulse Test ※ Notes :
10
-1 2. TC = 25℃ 1. VDS = 50V
2. 250μ s Pulse Test
-1
10
10
-1
10
0
10
1
2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

3.0

1
10
2.5
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

VGS = 10V
RDS(ON) [Ω ],

2.0 VGS = 20V

0
10

1.5 150℃ 25℃

※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μ s Pulse Test

1.0 10
-1

0 4 8 12 16 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

2500 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 160V
Crss = Cgd
10 VDS = 400V
2000 Ciss
VDS = 640V
VGS, Gate-Source Voltage [V]

8
1500
Capacitance [pF]

Coss 6

1000
※ Notes :
1. VGS = 0 V 4
2. f = 1 MHz

500 Crss
2
※ Note : ID = 8A

0 0
10
-1
10
0
10
1 0 10 20 30 40

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 3 [Link]

 FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BV DSS , (Normalized)

RDS(ON) , (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 μ A 0.5 1. VGS = 10 V
2. ID = 4.0 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C]
o
TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

2 Operation in This Area 2 Operation in This Area

10 is Limited by R DS(on) 10 is Limited by R DS(on)
10 µs 10 µs

1
100 µs 100 µs
1
10 10
1 ms 1 ms
ID, Drain Current [A]
ID, Drain Current [A]

10 ms 10 ms
DC
0 0
10 10 DC

-1 ※ Notes : 10
-1 ※ Notes :
10 o o
1. TC = 25 C 1. TC = 25 C
o o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse

-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FQP8N80C for FQPF8N80C

10

8
ID, Drain Current [A]

0
25 50 75 100 125 150
TC, Case Temperature [℃]

Figure 10. Maximum Drain Current

vs Case Temperature

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 4 [Link]

 FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Typical Characteristics (Continued)

0
10

(t), T h e r m a l R e s p o n s e D = 0 .5

0 .2
※ N o te s :
-1 1 . Z θ J C ( t) = 0 .7 ℃ /W M a x .
10
0 .1 2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)

0 .0 5

0 .0 2
θ JC

0 .0 1
s in g le p u l s e
Z

-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve for FQP8N80C

(t), T h e r m a l R e s p o n s e

10
0 D = 0 .5

0 .2 ※ N o te s :
1 . Z θ J C (t) = 2 .1 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
0 .1 3 . T J M - T C = P D M * Z θ J C (t)

-1 0 .0 5
10

0 .0 2
0 .0 1
θ JC
Z

-2 s in g le p u ls e
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF8N80C

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 5 [Link]

 FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A 5 [Link]

 FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

V DS

I SD
L

D r iv e r
R G
S am e T ype
as DUT V DD

V G S • d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d

G a t e P u ls e W id th
V GS D = --------------------------
G a te P u ls e P e r io d 10V
( D r iv e r )

I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT ) d i/ d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT ) B o d y D io d e R e c o v e r y d v / d t

V SD
V DD

B o d y D io d e
F o r w a r d V o lt a g e D r o p

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A 6 [Link]

 FDB037N06 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

V DS

I SD
L

D r iv e r
R G
S am e T ype
as DUT V DD

V G S • d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d

G a t e P u ls e W id th
V GS D = --------------------------
G a te P u ls e P e r io d 10V
( D r iv e r )

I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT ) d i/ d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT ) B o d y D io d e R e c o v e r y d v / d t

V SD
V DD

B o d y D io d e
F o r w a r d V o lt a g e D r o p

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A 7 [Link]

 FQP8N80C/FQPF8N80CFQPF8N80CYDTU 800V N-Channel MOSFET
Package Dimensions

TO-220
9.90 ±0.20 4.50 ±0.20
1.30 ±0.10

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 8 [Link]

 FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Package Dimensions (Continued)

TO-220F
3.30 ±0.10

10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20

(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3
0°
)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

Dimensions in Millimeters

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 9 [Link]

 FQF8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 10 [Link]

 FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
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Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

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Semiconductor. The datasheet is for reference information only.
Rev. I37

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A 11 [Link]