Code No.
: 22ECC01
CHAITANYA BHARATHI INSTITUTE OF TECHNOLOGY (Autonomous)
B.E. (ECE) III Sem (Main) Examination Dec 2023 – Jan 2024
Electronic Devices
Time: 3 Hours Max Marks: 60
Note: Answer ALL questions from Part-A at one place in the same order and Part–B
(Internal Choice)
Part - A
(5Q X 2M = 10 Marks)
M CO BT
1 Determine the forward resistance of a Silicon PN Junction Diode, when the (2) 1 2
o
forward current is 5mA at T= 300 K.
2 Define ripple factor and efficiency of the rectifier. (2) 2 1
3 In a CB connection, the emitter current is 10mA and collector current is 9.8mA. (2) 3 2
Find the value of base current.
4 What is pinch off voltage? (2) 4 1
5 Contrast LED and Photo Diode. (2) 5 1
Part - B (50 Marks)
(5Q X 10M = 50 Marks)
M CO BT
6 (a) Interpret V-I characteristic of PN Junction Diode with neat diagrams. (5) 1 2
(b) List differences of Avalanche and Zener breakdown. . (5) 1 3
(OR)
7 (a) Explain Line and Load Regulation of Zener Diode (5) 1 2
(b) If dc unregulated input is 20V, Vo=10V, load current is 0 - 20mA, (5) 1 4
Iz(min)=10mA, Iz(max)=100mA, Design the Shunt Zener Voltage
Regulator
8 (a) Design a shunt clipper to clip the voltage above 2V for any Input signal (5) 2 3
and also draw transfer characteristic, input and output waveforms
(b) A zener voltage regulator circuit is to maintain constant voltage at 60V (5) 2 3
over a range from 5 to 50 mA. The input supply voltage is 200V.
Determine the value of resistance R to be connected in the circuit for
voltage regulation from load current IL = 0 mA to IL max, the maximum
possible value of IL. what is the value of IL max.
(OR)
9 (a) Examine that the ripple factor of half wave rectifier is 1.21. (5) 2 3
(b) Derive the ripple factor of full wave rectifier with capacitor filter. (5) 2 3
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Code No.: 22ECC01
10 (a) Illustrate input and output characteristics of CE configuration with neat (5) 3 2
circuit diagram and graph.
(b) Define transistor h-parameters in CE configuration. (5) 3 2
(OR)
11 (a) Distinguish CE, CB, CC Configuration. (5) 3 2
(b) Develop the relation between alpha, beta and gamma. (5) 3 2
12 (a) Explain the operation of n-channel enhancement mode MOSFET with (5) 4 2
neat diagram.
(b) Explain differences between FET and BJT. (5) 4 2
(OR)
13 (a) An N- channel JFET has IDSS = 8 mA and Vp = - 5V. Determine the (5) 4 2
minimum value of VDS for pinch off region and the drain current IDS for
VGS = - 2V in the pinch off region.
(b) Outline the operation of n-channel depletion mode MOSFET with neat (5) 4 2
diagrams.
14 (a) Contrast the V-I Characteristics of SCR with neat diagram. (5) 5 2
(b) Explain the operation of LED Diode with neat diagram. (5) 5 2
(OR)
15 (a) Summarize the V-I Characteristics of UJT with neat diagram. (5) 5 2
(b) Explain the operation of Photo Diode with neat diagram. (5) 5 2
*****
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