® OPA

660
OPA660
OPA
660

Wide Bandwidth
OPERATIONAL TRANSCONDUCTANCE
AMPLIFIER AND BUFFER
FEATURES APPLICATIONS
● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS
● HIGH SLEW RATE: 3000V/µs ● VIDEO/BROADCAST EQUIPMENT
● LOW DIFFERENTIAL GAIN/PHASE ● COMMUNICATIONS EQUIPMENT
ERROR: 0.06%/0.02° ● HIGH-SPEED DATA ACQUISITION
● VERSATILE CIRCUIT FUNCTION ● WIDEBAND LED DRIVER
● EXTERNAL IQ-CONTROL ● AGC-MULTIPLIER
● NS-PULSE INTEGRATOR
DESCRIPTION ● CONTROL LOOP AMPLIFIER
● 400MHz DIFFERENTIAL INPUT
The OPA660 is a versatile monolithic component
AMPLIFIER
designed for wide-bandwidth systems including high
performance video, RF and IF circuitry. It includes a 200Ω
5 6
wideband, bipolar integrated voltage-controlled cur- +1
8 VO
rent source and voltage buffer amplifier. C
100Ω
The voltage-controlled current source or Operational VI
3 B OTA
R3
390Ω
Transconductance Amplifier (OTA) can be viewed as R1 IQ = 20mA
an “ideal transistor.” Like a transistor, it has three E
2 R3
terminals—a high-impedance input (base), a low- G=1+ =3
2R5
impedance input/output (emitter), and the current RP R5
82Ω 100Ω
output (collector). The OTA, however, is self-biased CP
and bipolar. The output current is zero-for-zero dif- 6.4pF
ferential input voltage. AC inputs centered about zero
produce an output current which is bipolar and cen- XE
tered about zero. The transconductance of the OTA OPA660 DIRECT-FEEDBACK FREQUENCY RESPONSE
can be adjusted with an external resistor, allowing 20
bandwidth, quiescent current and gain trade-offs to 15 5Vp-p
be optimized. 10 2.8Vp-p
Output Voltage (dB)

The open-loop buffer amplifier provides 850MHz 5

1.4Vp-p
bandwidth and 3000V/µs slew rate. Used as a basic 0
building block, the OPA660 simplifies the design of –5 0.6Vp-p

AGC amplifiers, LED driver circuits for Fiber Optic –10

Transmission, integrators for fast pulses, fast control –15 0.2Vp-p
loop amplifiers, and control amplifiers for capacitive –20
sensors and active filters. –25

The OPA660 is packaged in SO-8 surface-mount, –30

100k 1M 10M 100M 1G
and 8-pin plastic DIP, specified from –40°C to +85°C.
Frequency (Hz)

International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: [Link] • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132

© 1990 Burr-Brown Corporation PDS-1072F Printed in U.S.A. April, 1995

SBOS007
SPECIFICATIONS
Typical at IQ = 20mA, VS = ±5V, TA = +25°C, and RL = 500Ω, unless otherwise specified.

OPA660AP, AU
PARAMETER CONDITIONS MIN TYP MAX UNITS

OTA TRANSCONDUCTANCE
Transconductance VC = 0V 75 125 200 mA/V
OTA INPUT OFFSET VOLTAGE VB = 0
Initial +10 ±30 mV
vs Temperature 50 µV/°C
vs Supply (tracking) VS = ±4.5V to ±5.5V 55 60 dB
vs Supply (non-tracking) V+ = 4.5V to 5.5V 40 45 dB
vs Supply (non-tracking) V– = –4.5V to –5.5V 40 48 dB
OTA B-INPUT BIAS CURRENT
Initial –2.1 ±5 µA
vs Temperature 5 nA/°C
vs Supply (tracking) VS = ±4.5V to ±5.5V ±750 nA/V
vs Supply (non-tracking) V+ = 4.5V to 5.5V ±1500 nA/V
vs Supply (non-tracking) V– = –4.5V to –5.5V ±500 nA/V
OTA OUTPUT BIAS CURRENT
Output Bias Current VB = 0, VC = 0V ±10 ±20 µA
vs Temperature 500 nA/°C
vs Supply (tracking) VS = ±4.5V to ±5.5V ±10 ±25 µA/V
vs Supply (non-tracking) V+ = 4.5V to 5.5V ±10 ±25 µA/V
vs Supply (non-tracking) V– = –4.5V to –5.5V ±10 ±25 µA/V
OTA OUTPUT
Output Current ±10 ±15 mA
Output Voltage Compliance IC = ±1mA ±4.0 ±4.7 V
Output Impedance 25k || 4.2 Ω || pF
Open-Loop Gain f = 1kHz 70 dB

BUFFER OFFSET VOLTAGE

Initial +7 ±30 mV
vs Temperature 50 µV/°C
vs Supply (tracking) VS = ±4.5V to ±5.5V 55 60 dB
vs Supply (non-tracking) V+ = 4.5V to 5.5V 40 45 dB
vs Supply (non-tracking) V– = –4.5V to –5.5V 40 48 dB
BUFFER INPUT BIAS CURRENT
Initial –2.1 ±5 µA
vs Temperature 5 nA/°C
vs Supply (tracking) VS = ±4.5V to ±5.5V ±750 nA/V
vs Supply (non-tracking) V+ = 4.5V to 5.5V ±1500 nA/V
vs Supply (non-tracking) V– = –4.5V to –5.5V ±500 nA/V
BUFFER and OTA INPUT IMPEDANCE
Input Impedance 1.0 || 2.1 MΩ || pF
BUFFER INPUT NOISE
Voltage Noise Density, f = 100kHz 4 nV/√Hz
BUFFER DYNAMIC RESPONSE
Small Signal Bandwidth VO = ±100mV 850 MHz
Full Power Bandwidth VO = ±1.4V 800 MHz
VO = ±2.5V 570 MHz
Differential Gain Error 3.58MHz, at 0.7V 0.06 %
Differential Phase Error 3.58MHz, at 0.7V 0.02 Degrees
Harmonic Distortion, 2nd Harmonic f = 10MHz, VO = 0.5Vp-p –68 dBc
Slew Rate 5V Step 3000 V/µs
Settling Time 0.1% 2V Step 25 ns
Rise Time (10% to 90%) VO = 100mVp-p 1 ns
5V Step 1.5 ns
Group Delay Time 250 ps
BUFFER RATED OUTPUT
Voltage Output IO = ±1mA ±3.7 ±4.2 V
Current Output ±10 ±15 mA
Gain RL = 500Ω 0.96 0.975 V/V
RL = 5kΩ 0.99 V/V
Output Impedance 7 || 2 Ω || pF

POWER SUPPLY
Voltage, Rated ±5 V
Derated Performance ±4.5 ±5.5 V
Quiescent Current (Programmable, Useful Range) ±3 to ±26 mA

OPA660 2
PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS
Top View DIP/SO-8 Power Supply Voltage ......................................................................... ±6V
Input Voltage(1) ........................................................................ ±VS ±0.7V
I Q Adjust C Operating Temperature ................................................... –40°C to +85°C
1 8
Storage Temperature ..................................................... –40°C to +125°C
Junction Temperature .................................................................... +175°C
Lead Temperature (soldering, 10s) ............................................... +300°C
E 2 7 V+ = +5V
NOTE: (1) Inputs are internally diode-clamped to ±VS.

B 3 1 6 Out
PACKAGE/ORDERING INFORMATION
PACKAGE
V– = –5V 4 5 In
DRAWING TEMPERATURE
PRODUCT PACKAGE NUMBER(1) RANGE

OPA660AP 8-Pin Plastic DIP 006 –25°C to +85°C

OPA660AU SO-8 Surface-Mount 182 –25°C to +85°C

NOTE: (1) For detailed drawing and dimension table, please see end of data
ELECTROSTATIC sheet, or Appendix C of Burr-Brown IC Data Book.

DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.

3 OPA660
TYPICAL PERFORMANCE CURVES
IQ = 20mA, TA = +25°C, and VS = ±5V unless otherwise noted.

TOTAL QUIESCENT CURRENT vs RQ TOTAL QUIESCENT CURRENT vs TEMPERATURE

100 1.5

Total Quiescent Current (Normalized)

1.4
Total Quiescent Current (mA)

1.3
30
Nominal 1.2
Device High IQ 1.1
Device
10 1.0
0.9
0.8
3.0
Low IQ 0.7
Device 0.6
1.0 0.5
100 300 1.0k 3.0k 10k –25 0 25 50 75 100
R Q — Resistor Value ( Ω) Temperature (°C)

BUFFER AND OTA B-INPUT BIAS CURRENT

vs TEMPERATURE OTA C-OUTPUT BIAS CURRENT vs TEMPERATURE
0.0
5 Representative
OTA C-Output Bias Current (µA)

Units
–1.0
Input Bias Current (µA)

–2.0
Trim Point

–3.0

–4.0

–5.0 –40
–20 –0 20 40 60 80 100 –20 –0 20 40 60 80 100
Temperature (°C) Temperature (°C)

OTA C-OUTPUT RESISTANCE

vs TOTAL QUIESCENT CURRENT (IQ) OTA TRANSFER CHARACTERISTICS
60 10
OTA Output Resistance (k Ω)

50
OTA Output Current (mA)

5
40

30 0 IQ = 5mA

20
–5 IQ = 10mA
10
IQ = 20mA
0 –10
4 6 8 10 12 14 16 18 20 –60 –40 –20 0 20 40 60
Total Quiescent Current — IQ (mA) OTA Input Voltage (mV)

OPA660 4
TYPICAL PERFORMANCE CURVES (CONT)
IQ = 20mA, TA = +25°C, and VS = ±5V unless otherwise noted.

BUFFER AND OTA B-INPUT OFFSET VOLTAGE BUFFER AND OTA B-INPUT RESISTANCE
vs TEMPERATURE vs TOTAL QUIESCENT CURRENT (IQ)
20 4

Buffer and OTA B-Input Resistance (MΩ)

15 RINOTA
3
10
Offset Voltage (mV)

5 RINBUF
2
0

–5 1

–10
0
–15
–20 –1
–25 0 25 50 75 100 4 6 8 10 12 14 16 18 20
Temperature (°C) Total Quiescent Current — IQ (mA)

BUFFER OUTPUT AND OTA E-OUTPUT RESISTANCE BUFFER SLEW RATE

Buffer Output and OTA E-Output Resistance (Ω)

vs TOTAL QUIESCENT CURRENT (IQ) vs TOTAL QUIESCENT CURRENT (IQ)

40 4000
3800
3600
30
3400 Rising Edge
Slew Rate (V/µs)

3200
20 3000

ROUTOTA 2800
Falling Edge
ROUTBUF 2600
10
2400
2200
0 2000
4 6 8 10 12 14 16 18 20 4 6 8 10 12 14 16 18 20
Total Quiescent Current—IQ (mA) Total Quiescent Current—IQ (mA)

OTA TRANSCONDUCTANCE
vs TOTAL QUIESCENT CURRENT (IQ) OTA TRANSCONDUCTANCE vs FREQUENCY
150 1000
RL = 50Ω
OTA Transconductance (mA/V)
OTA Transconductance (mA/V)

100 IQ = 20mA 106mA/V

100

IQ = 10mA 66mA/V
50

IQ = 5mA 40mA/V
0 10
0 2 4 6 8 10 12 14 16 18 20 1M 10M 100M 1G
Total Quiescent Current—IQ (mA) Frequency (Hz)

5 OPA660
TYPICAL PERFORMANCE CURVES (CONT)
IQ = 20mA, TA = +25°C, and VS = ±5V unless otherwise noted.

BUFFER VOLTAGE NOISE SPECTRAL DENSITY BUFFER FREQUENCY RESPONSE

100 20
–3dB Point
15
2.8Vp-p
10
Voltage Noise (nV/ Hz)

Output Voltage (dB)

5 1.4Vp-p
0
–5 0.6Vp-p
10
–10
–15 0.2Vp-p
–20
–25
1 dB
100 1k 10k 100k 1M 10M 100M 200k 1M 10M 100M 1G
Frequency (Hz) Frequency (Hz)
IQ = 20mA RIN = 160Ω RL = 100Ω

BUFFER MAX OUTPUT VOLTAGE vs FREQUENCY TRANSCONDUCTANCE vs INPUT VOLTAGE

10 160
Buffer Output Voltage (Vp-p)

RQ = 250Ω
Transconductance (mA/V)

120

RQ = 500Ω

0 80
RQ = 1kΩ

RQ = 2kΩ
40

0.1 0
1M 10M 100M 1G –40 –30 –20 –10 0 10 20 30 40
Frequency (Hz) Input Voltage (mV)

OTA PULSE RESPONSE OTA PULSE RESPONSE

+0.625V +2.5V
VO (V)
VO (V)

0V 0V

–0.625V –2.5V

Input Voltage = 1.25Vp-p, tR = tF = 1ns, Gain = 4 Output Voltage = 5Vp-p

OPA660 6
TYPICAL PERFORMANCE CURVES (CONT)
IQ = 20mA, TA = +25°C, and VS = ±5V unless otherwise noted.

BUFFER LARGE SIGNAL PULSE RESPONSE BUFFER LARGE SIGNAL PULSE RESPONSE
VO (V)

VO (V)
(HDTV Signal Pulse) tR = tF = 10ns, VO = 5Vp-p tR = tF = 3ns, VO = 5Vp-p

R6 Network
50Ω 160Ω 50Ω Analyzer
6
+1
VI 5 VO
50Ω RIN = 50Ω
50Ω 50Ω
R7

RL = R6 + R7||RIN = 100Ω

Test Circuit Buffer Pulse and Frequency Response tR = tF = 3ns, VO = 0.2Vp-p

BUFFER DIFFERENTIAL GAIN ERROR BUFFER DIFFERENTIAL PHASE ERROR

vs TOTAL QUIESCENT CURRENT (IQ) vs TOTAL QUIESCENT CURRENT (IQ)
0.25 0.10
RL = 500Ω
Differential Phase Error (Degrees)

0.09
VO = 0.7Vp-p
Differential Gain Error (%)

0.20 0.08 f = 3.58MHz

RL = 500Ω 0.07
VO = 0.7Vp-p
0.15 f = 3.58MHz 0.06
0.05
0.10 0.04
0.03
0.05 0.02
0.01
0 0
4 6 8 10 12 14 16 18 20 4 6 8 10 12 14 16 18 20
Total Quiescent Current —IQ (mA) Total Quiescent Current—IQ (mA)

7 OPA660
TYPICAL PERFORMANCE CURVES (CONT)
IQ = 20mA, TA = +25°C, and VS = ±5V unless otherwise noted.

HARMONIC DISTORTION vs FREQUENCY HARMONIC DISTORTION vs FREQUENCY

–30 –30
RL = 150Ω RL = 500Ω
VO = 0.5Vp-p IQ = 20mA 3f
–40 –40
Harmonic Distortion (dBc)

Harmonic Distortion (dBc)

IQ = 20mA 2Vp-p

–50 –50 3f
2f 0.5Vp-p
2f
2Vp-p
–60 –60
3f

–70 –70 2f
0.5Vp-p
Measurement Limit Measurement Limit
–80 –80
10M 20M 40M 60M 100M 10M 20M 40M 60M 100M
Frequency (Hz) Frequency (Hz)

APPLICATIONS INFORMATION
The OPA660 operates from ±5V power supplies (±6V The buffer output is not current-limited or protected. If the
maximum). Do not attempt to operate with larger power output is shorted to ground, currents up to 60mA could flow.
supply voltages or permanent damage may occur. Momentary shorts to ground (a few seconds) should be
Inputs of the OPA660 are protected with internal diode avoided, but are unlikely to cause permanent damage. The
clamps as shown in the simplified schematic, Figure 1. These same cautions apply to the OTA section when connected as
protection diodes can safely conduct 10mA, continuously a buffer (see Basic Applications Circuits, Figure 6b).
(30mA peak). If input voltages can exceed the power supply
voltages by 0.7V, the input signal current must be limited.

(7)
+VCC = +5V

VI VO B E C

(5) (6) (3) (2) (8)

Bias
Circuitry BUFFER OTA

100Ω
50kΩ

–VCC = –5V
I Q Adj. R Q (ext.) (4)
(1)

FIGURE 1. Simplified Circuit Diagram.

®

OPA660 8
BUFFER SECTION—AN OVERVIEW QUIESCENT CURRENT CONTROL PIN
The buffer section of the OPA660 is an open-loop buffer The quiescent current of the OPA660 is set with a resistor,
consisting of complementary emitter-followers. It uses no RQ, connected from pin 1 to V–. It affects the operating
feedback, so its low frequency gain is slightly less than unity currents of both the buffer and OTA sections. This controls
and somewhat dependent on loading. It is designed prima- the bandwidth and AC behavior as well as the
rily for interstage buffering. It is not designed for driving transconductance of the OTA section.
long cables or low impedance loads (although with small RQ = 250Ω sets approximately 20mA total quiescent current at
signals, it may be satisfactory for these applications).
25°C. With a fixed 250Ω resistor, process variations could
cause this current to vary from approximately 16mA to 26mA.
TRANSCONDUCTANCE It may be appropriate in some applications to trim this resistor
(OTA) SECTION—AN OVERVIEW to achieve the desired quiescent current or AC performance.
The symbol for the OTA section is similar to a transistor. Applications circuits generally do not show resistor, RQ,
Applications circuits for the OTA look and operate much but it is required for proper operation.
like transistor circuits—the transistor, too, is a voltage-
With a fixed RQ resistor, quiescent current increases with
controlled current source. Not only does this simplify the
temperature (see typical performance curve, Quiescent Current
understanding of applications circuits, but it aids the circuit
vs Temperature). This variation of current with temperature
optimization process. Many of the same intuitive techniques
holds the transconductance, gm, of the OTA relatively con-
used with transistor designs apply to OTA circuits as well.
stant with temperature (another advantage over a transistor).
The three terminals of the OTA are labeled B, E, and C. This
It is also possible to vary the quiescent current with a control
calls attention to its similarity to a transistor, yet draws
signal. The control loop in Figure 3 shows a 1/2 of a REF200
distinction for clarity.
current source used to develop 100mV on R1. The loop
While it is similar to a transistor, one essential difference is forces 100mV to appear on R2. Total quiescent current of the
the sense of the C output current. It flows out the C terminal OPA660 is approximately 85 • I1, where I1 is the current
for positive B-to-E input voltage and in the C terminal for made to flow out of pin 1.
negative B-to-E input voltage. The OTA offers many advan-
tages over a discrete transistor. The OTA is self-biased,
simplifying the design process and reducing component
Internal
count. The OTA is far more linear than a transistor. Current Source
Transconductance of the OTA is constant over a wide range Circuitry OPA660
of collector currents—this implies a fundamental improve-
ment of linearity.
V+

BASIC CONNECTIONS
1/2 REF200 100Ω
Figure 2 shows basic connections required for operation. 100µA 1kΩ 50kΩ
R1
These connections are not shown in subsequent circuit
diagrams. Power supply bypass capacitors should be located 1 4
I1
as close as possible to the device pins. Solid tantalum
–VCC
capacitors are generally best. See “Circuit Layout” at the end 425Ω
R2
of the applications discussion and Figure 26 for further
IQ ≈ 85 • I1
suggestions on layout. = 85 • (100µA)
R1
1/2 R2
(1)
OPA1013 = 20mA

NOTE: (1) Requires input common-mode range and

RQ = 250Ω sets roughly output swing close to V–, thus the choice of OPA1013.
IQ ≈ 20mA +5V (1)
1 8 470pF
FIGURE 3. Optional Control Loop for Setting Quiescent
RQ Current.
2 7
250Ω
10nF
RB + With this control loop, quiescent current will be nearly
2.2µF
3 1 6
Solid
constant with temperature. Since this differs from the tem-
(25Ω to
200Ω) Tantalum perature-dependent behavior of the internal current source,
10nF
–5V(1) 4 5 other temperature-dependent behavior may differ from that
470pF RB shown in typical performance curves.
+
(25Ω to 200Ω)
2.2µF
The circuit of Figure 3 will control the IQ of the OPA660
Solid somewhat more accurately than with a fixed external resis-
Tantalum tor, RQ. Otherwise, there is no fundamental advantage to
NOTE: (1) VS = ±6V absolute max.

FIGURE 2. Basic Connections.

®

9 OPA660
using this more complex biasing circuitry. It does, however,
demonstrate the possibility of signal-controlled quiescent +5V
current. This may suggest other possibilities such as AGC,
dynamic control of AC behavior, or VCO. 4.7kΩ Internal
Figure 4 shows logic control of pin 1 used to disable the Current Source
Circuitry
OPA660. Zero/5V logic levels are converted to a 1mA/0mA 0/5V 2N2907 OPA660
current connected to pin 1. The 1mA current flowing in RQ Logic In
increases the voltage at pin 1 to approximately 1V above the 5V: OPA660 On

–5V rail. This will reduce IQ to near zero, disabling the

OPA660. 100Ω
50kΩ

BASIC APPLICATIONS CIRCUITS IC 1 4

Most applications circuits for the OTA section consist of a
few basic types which are best understood by analogy to a RQ
transistor. Just as the transistor has three basic operating IC = 0: OPA660 On 250Ω
IC ≈ 1mA: OPA660 Off
modes—common emitter, common base, and common col-
lector—the OTA has three equivalent operating modes com- –5V
mon-E, common-B, and common-C. See Figures 5, 6, and 7.
FIGURE 4. Logic-Controlled Disable Circuit.

V+

RB RL
8 VO
VO C
100Ω Non-Inverting Gain
VI 3 B OTA
Inverting Gain RL VOS ≈ 0
VI
VOS ≈ several volts E
2
RE
RB RE

V–

(a) Common-Emitter Amplifier (b) Common-E Amplifier

Transconductance varies over temperature. Transconductance remains constant over temperature.

FIGURE 5. Common-Emitter vs Common-E Amplifier.

V+
RL RL
V+ 8 G=– ≈–
C RL 1 RE
RE +
100Ω gm
3 B G≈1
VI OTA
VOS ≈ 0 VO
E
VI
2 Non-Inverting Gain
VO VOS ≈ several volts
8 VO
VO RE
C Inverting Gain
100Ω
G≈1 RE 3 B VOS ≈ 0
(b) Common-C Amplifier OTA
RE VOS ≈ 0.7V RL
(Buffer)
E
VI
1 2
G= ≈1
V– 1 (a) Common-Base
1+ RE
gm ¥ R E Amplifier
(a) Common-Collector Amplifier
(Emitter Follower) 1 VI
RO =
gm
(b) Common-B Amplifier

FIGURE 6. Common-Collector vs Common-C Amplifier. FIGURE 7. Common-Base vs Common-B Amplifier.

OPA660 10
A positive voltage at the B, pin 3, causes a positive current It is recommended to use a low value resistor in series with
to flow out of the C, pin 8. Figure 5b shows an amplifier the B OTA and buffer inputs. This reduces any tendency to
connection of the OTA, the equivalent of a common-emitter oscillate and controls frequency response peaking. Values
transistor amplifier. Input and output can be ground-refer- from 25Ω to 200Ω are typical.
enced without any biasing. Due to the sense of the output Figure 7 shows the Common-B amplifier. This configura-
current, the amplifier is non-inverting. Figure 8 shows the tion produces an inverting gain, and a low impedance input.
amplifier with various gains and output voltages using this This low impedance can be converted to a high impedance
configuration. by inserting the buffer amplifier in series.
Just as transistor circuits often use emitter degeneration,
OTA circuits may also use degeneration. This can be used to CIRCUIT LAYOUT
reduce the effect that offset voltage and offset current might
The high frequency performance of the OPA660 can be
otherwise have on the DC operating point of the OTA. The
greatly affected by the physical layout of the circuit. The
E-degeneration resistor may be bypassed with a large ca-
following tips are offered as suggestions, not dogma.
pacitor to maintain high AC gain. Other circumstances may
suggest a smaller value capacitor used to extend or optimize • Bypass power supplies very close to the device pins. Use
high-frequency performance. a combination between tantalum capacitors (approxi-
The transconductance of the OTA with degeneration can be mately 2.2µF) and polyester capacitors. Surface-mount
types are best because they provide lowest inductance.
calculated by—
1 • Make short, wide interconnection traces to minimize
gm = series inductance.
1
+ RE • Use a large ground plane to assure that a low impedance
gm
ground is available throughout the layout.
Figure 6b shows the OTA connected as an E-follower—a • Do not extend the ground plane under high impedance
voltage buffer. The buffer formed by this connection per- nodes sensitive to stray capacitance.
forms virtually the same as the buffer section of the OPA660
• Sockets are not recommended because they add signifi-
(the actual signal path is identical).
cant inductance.

RL1 20
VO 15 –3dB Point
Network
8 2.8Vp-p
Analyzer 10
Output Voltage (dB)

RIN 5 1.4Vp-p
3 OTA 50Ω
RL2 0
600mVp-p
–5
100Ω rE
R1 –10
RL = RL1 + RL2 || RIN
–15 200mVp-p
VI 2
RL 1 –20
G= , rE =
RE RE + r E gm –25
1 –30
At IQ = 20mA r E = = 8Ω
125mA/V 300k 1M 10M 100M 1G 3G
RL Frequency (Hz)
G= at I Q = 20mA
RE + 8 Ω IQ = 20mA R1 = 100Ω RE = 51Ω RL = 50Ω Gain = 1

20 20
15 5Vp-p –3dB Point
–3dB Point 15
10 2.8Vp-p 10 2.8Vp-p
Output Voltage (dB)

Output Voltage (dB)

5 5
1.4Vp-p 1.4Vp-p
0 0
–5 600mVp-p –5
600mVp-p
–10 –10
–15 200mVp-p –15
–20 200mVp-p
–20
–25 –25
–30 –30
300k 1M 10M 100M 1G 3G 100k 1M 10M 100M 1G
Frequency (Hz) Frequency (Hz)

IQ = 20mA R1 = 100Ω RE = 51Ω RL = 100Ω Gain = 2 IQ = 20mA R1 = 100Ω RE = 51Ω RL = 500Ω Gain = 10

FIGURE 8. Common-E Amplifier Performance.

®

11 OPA660
• Use low-inductance components. Some film resistors are • A resistor (25Ω to 200Ω) in series with the buffer and/or
trimmed with spiral cuts which increase inductance. B input may help reduce oscillations and peaking.
• Use surface-mount components—they generally provide • Use series resistors in the supply lines to decouple mul-
the lowest inductance. tiple devices.

OPA660 CURRENT-FEEDBACK
56Ω 20
C1 R2 5Vp-p
5 6 15
+1 VO
10 2.8Vp-p

Output Voltage (dB)

8 5
1.4Vp-p
C
0
3 B OTA –5 0.6Vp-p
E –10
2 0.2Vp-p
200Ω –15
R1
47Ω –20 –3dB Point
R4
R5 –25
VI
22Ω –30
R4
G=1+ ≈ 10 100k 1M 10M 100M 1G
R5
Frequency (Hz)
R Q = 250Ω (IQ ≈ 20mA)
IQ = 20mA R1 = 47Ω R2 = 56Ω R4 = 200Ω R5 = 22Ω Gain = 10

FIGURE 9. Current-Feedback Amplifier. FIGURE 10. Current-Feedback Amplifier Frequency

Response, G = 10.

C1
20Ω 100pF 20Ω
5 6
VIN +1
OPA650 VOUT
D1 R2
100kΩ
D1, D2 = 1N4148 25Ω
RQ = 1kΩ
D2
R1
• The OTA amplifier works as a current conveyor 40.2Ω
(CCII) in this circuit, with a current gain of 1. 8 CCII 2
• R1 and C1 set the DC restoration time constant. C E
• D1 adds a propagation delay to the DC restoration.
B
• R2 and C1 set the decay time constant.
3
20Ω

FIGURE 11. DC Restorer Circuit.

8 VO
5 6
C 8 +1
3 B IO C
+IN OTA VI 150Ω
3 B RL
OTA RL G= ≈ +3
E 150Ω R E + rE
E
2 2
Tuning Coil 50Ω
RE
RE Magnetic Head
42Ω
Driver Transformer
2 R Q = 250Ω (IQ ≈ 20mA)
E
3 B FIGURE 13. Cable Amplifier.
–IN OTA

C
8

FIGURE 12. High Speed Current Driver (bridge combina-

tion for increased output voltage capability).
®

OPA660 12
 C8 0.5...2.5pF
+5V

R6 R8
47kΩ 27kΩ
Offset R2
Trim 10kΩ
+5V
2.2µF
–5V +5V C3
R3 C3
100Ω 2.2µF

R1 7 R4 1 R5
3
100Ω RC5 8 150Ω 47Ω
4
VI 150Ω OTA BUF600
5 6 2 1 VO
+1 C3
2.2µF
4 RQ 5
C3
R2 250Ω
100Ω
2.2µF
–5V
Propagation Delay Time = 5ns –5V
Rise Time = 1.5ns D1

D2

DMF3068A

FIGURE 14. Comparator (Low Jitter).

+5V

22Ω 22Ω

Q1 Q2
IO = IO1 + IO2 +IB

8 IO1 8 IO1
C C
180Ω 1kΩ
3 B 3 B
VI OTA OTA
Diode
E E
2 2
Q1, Q2: 2N3906
RE 180Ω RE
50Ω 50Ω

FIGURE 15. High Speed Current Driver.

13 OPA660
 8
C 33pF 200Ω
180Ω 5 6
3 B +1 VO
VI OTA 47Ω 8
C 27pF
E 780Ω
2 3 B OTA
VI
VO Network
VO f–3dB
Analyzer
E
±100mV 351MHz
RE 2 620Ω 820Ω
±300mV 374MHz 50Ω
50Ω RIN
±700mV 435MHz
50Ω
±1.4V 460MHz 1µF
50kΩ
±2.5V 443MHz

1 1
G= ≈ 1; RO = +5V –5V
1 2gm
1+
2gm • (RE + RIN)

FIGURE 16. Voltage Buffer with Doubled-Output Current. FIGURE 17. Integrator for ns-pulses.

+5V
2.2pF

10nF
R9
240Ω
+5V
R3
51Ω 7 8 22pF

R6
150Ω OPA660 10nF
3
+VI

R10 1 R11
R6
150Ω 51Ω VO
150Ω 5 OTA 4 BUF601 8
–VI +1

5
R7
4 1 6 R8 2
51Ω 10nF
R16 43Ω Rg
10nF 560Ω G = ––––––––– = 4
R8 + rE
C5 2.2µF
18pF rE = 1/gm
2.2µF –5V

–5V

FIGURE 18. 400MHz Differential Amplifier

10 –10

–20
0
–30
Gain (dB)

CMRR

–10 without C5
–40
with C5
–50
–20
–60
IQ = 20mA, G = +4V/V
–30 –70
300k 1M 10M 100M 1G 3G
Frequency (Hz)

FIGURE 19. CMRR and Bandwidth of the Differential Amplifier

®

OPA660 14
 C
3
B
C
E
2 TRANSFER CHARACTERISTICS
B
R3
E R2M R1M 1
+
VO s2C1C2R1M R3 + sC1 R2 R1
F(p) = =
R2 VI s2C1C2R1M R2M + sC1 R1M 1
+
R3S R2S R1S
C
C
VI 7
1 B Lowpass R2 = R3 = ∞
B C C2
E Highpass R1 = R2 = ∞
E 6 Bandpass R1 = R3 = ∞
B
C1 R2M Band Rejection R2 = ∞, R1 = R3
R1 E
Allpass R1 = R1S, R2 = –R2S, R3 = R3S

R1M

C VO

8
B
C C
E
4 5
B B RB
R3S
E E

RB RB
R1S R2S

FIGURE 20. High Frequency Universal Active Filter.

120Ω
5 6
+1 VLUMINANCE
8
C
150Ω
3 B OTA

E
2
665Ω(1) 200Ω
VRED

340Ω(1)
VGREEN

1820Ω(1)
VBLUE RQ = 500Ω (IQ ≈ 20mA)

NOTE: (1) Resistors shown are 1% values that

produce 30%/59%/11% R/G/B mix.

FIGURE 21. Video Luminance Matrix.

15 OPA660
 VO INT
8
+VO 290Ω
3 OTA
10Ω 15nF
IN6263 220Ω 2

IN6263 +5V
+5V 220Ω
180Ω
8 7
7 –VO 100Ω 6
1µF 5
VI 100Ω 180Ω +1
5 6 3
+1 OTA
1
4 1.2kΩ
4 1.2kΩ
20kΩ 2

–5V
–5V 12kΩ

220Ω 390Ω
+ –
5kΩ
Offset Trim 33pF

FIGURE 22. Signal Envelope Detector (Full-Wave Rectifier).

Network
120Ω 200Ω Analyzer
5 6
+1
8 R2 VO R4 VO f–3dB
C 50Ω
100Ω R3 R6 RIN ±100mV 331MHz
3 B 68Ω ±300mV 362MHz
VI OTA 390Ω
R1 IQ = 20mA ±700mV 520MHz
E ±1.4V 552MHz
2 ±2.5V 490MHz

RP R5
82Ω 100Ω
R3
CP + R5 R3
2
6.4pF G= =1+
1 2R5
R5 +
2 • gm
XE

FIGURE 23. Direct-Feedback Amplifier.

OPA660 16
 OPA660 DIRECT FEEDBACK
20
Gain = 3, tR – tF = 2ns, VI = 100mVp–p
15 5Vp-p

Output Voltage (dB) 10 2.8Vp-p

5
1.4Vp-p +150mV
0
–5 0.6Vp-p

VO (V)
–10 0V
–15 0.2Vp-p
–20
–25 –150mV
–30
100k 1M 10M 100M 1G
Frequency (Hz)
R1 = 100Ω R2 = 120Ω R3 = 390Ω R4 = 200Ω 0 5 10 15 20 25 30 35 40 45 50
R5 = 100Ω R6 = 68Ω IQ = 20mA Rp = 82Ω Cp = 6.4pF Time (ns)

FIGURE 24. Frequency Response Direct-Feedback Amplifier. FIGURE 25. Direct-Feedback Amplifier Small-Signal Pulse
Response.

Network
VO 180Ω
Analyzer
Gain = 3, VI = 2Vp-p, tR = tF = 2ns
8 R2
R1 C R3 50Ω
56Ω
160Ω RIN
+3V VI OTA
3 B
E IQ = 20mA
2
VO(V)

0V VO f–3dB
R4P R4
75Ω 51Ω ±100mV 351MHz
±300mV 374MHz
C4P ±700mV 435MHz
–3V 5.6pF ±1.4V 460MHz
±2.5V 443MHz

FIGURE 27. Forward Amplifier.

0 5 10 15 20 25 30 35 40 45 50
Time (ns)
SPICE MODELS
FIGURE 26. Direct-Feedback Amplifier Large-Signal Pulse Computer simulation using SPICE models is often useful
Response. when analyzing the performance of analog circuits and sys-
tems. This is particularly true for video and RF amplifier
OPA660 OTA FORWARD AMPLIFIER
circuits, where parasitic capacitance and inductance can have
20 a major effect on circuit performance. SPICE models are
15 5Vp-p available from Burr-Brown.
10 2.8Vp-p
Output Voltage (dB)

5 1.4Vp-p
0
–5 0.6Vp-p

–10
–15 0.2Vp-p

–20
–25
–30
100k 1M 10M 100M 1G
Frequency (Hz)
IQ = 20mA R1 = 160Ω R4 = 51Ω
R2 = 180Ω R3 = 56Ω R4p = 75Ω C4p = 5.6pF

FIGURE 28. Frequency Response Forward Amplifier.

17 OPA660
FIGURE 29. Evaluation Circuit Silk Screen and Board Layouts.

R5 R6
160Ω 470Ω
5 6
BUF In +1 BUF Out
R7
56Ω
R2
24Ω
OTA Out
8 RQC
R1 C +5V –5V
R3 820Ω
100Ω
3 B OTA 51Ω 1
OTA In
470pF 470pF
E
2 10nF 10nF

C1 R4 C2 2.2µF 2.2µF
2.2µF 51Ω 3.3nF
1N4007
7 4

FIGURE 30. Evaluation Circuit Diagram.

OPA660 18
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