Vacuum 181 (2020) 109670

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Hybrid HIPIMS+MFMS power supply for dual magnetron

sputtering systems
V.O. Oskirko a, b, A.N. Zakharov a, A.P. Pavlov a, b, А.А. Solovyev a, *, V.A. Semenov a, S.
V. Rabotkin a
a
The Institute of High Current Electronics SB RAS, 2/3, Akademichesky Ave., 634055, Tomsk, Russia
b
OOO Applied Electronics, Apt. 80, 15, Akademichesky Ave., 634055, Tomsk, Russia

A R T I C L E I N F O A B S T R A C T

Keywords: The paper presents a novel power supply device that provides a hybrid technique of dual magnetron sputtering.
High-power impulse magnetron sputtering This power supply generates a sequence of bipolar pulses which provides both mid-frequency and high-power
Mid-frequency magnetron sputtering impulse magnetron sputtering. This allows using the advantages of both techniques, while numerous adjust­
Superimposed MF and HIPIMS
able parameters considerably enhance the capabilities of the magnetron sputtering system. In the proposed
Dual magnetron sputtering
power supply circuit, special attention is paid to the output pulse formers and the power switch control. The
experimental results are obtained for superimposed mid-frequency and dual high-power impulse magnetron
sputtering. During the aluminum film deposition, the deposition rate, the ion current density on the substrate and
the ion-to-atom ratio are regulated by changing the power ratio between mid-frequency and high-power impulse
magnetron sputtering.

1. Introduction review papers are devoted to the HIPIMS method [10–13] including
reactive HIPIMS (magnetron sputtering in reactive atmospheres) [14].
High-power impulse magnetron sputtering (HIPIMS) is a relatively As compared to DCMS and mid-frequency magnetron sputtering
new method utilizing ionized physical vapor deposition of thin films, (MFMS), HIPIMS is characterized by the lower deposition rate [15,16].
which is based on direct-current magnetron sputtering (DCMS) [1,2]. This is because the ionized sputtered material returns to the target due to
HIPIMS utilizes low duty-cycle pulses of ≤10%, which allow increasing the influence of an electric field.
the peak power density of pulse discharges without an overheat of the In order to produce high-quality coatings at high deposition rates,
magnetron sputtering system (MSS). If the average power or electric several approaches can be used. Among them is a hybrid technique of
current are kept constant, the peak power of pulse discharges is more magnetron sputtering, which combines HIPIMS with either DCMS or
pronounced the lower the duty cycle. The peak power can reach several MFMS. This technique allows taking HIPIMS advantages in maintaining
megawatts [3], while the peak power density reaches several kW/cm2 the appropriate deposition rate. The implementation of the hybrid
on the target. The high peak power density results in high-density magnetron sputtering technique depends on magnetron sputtering
plasma with a 90% ionization of the sputtered target material [4], power supply devices. For this purpose, specialized power supplies
whereas the ionization degree in DCMS is less than a few percent. The realizing both HIPIMS and MFMS can be used, or it is necessary to
plasma concentration in HIPIMS and DCMS varies between 1012–1013 combine and match two separate power supplies (HIPIMS and MF). At
cm− 3 [5,6] and 109–1010 cm− 3, respectively. The high degree of ioni­ the moment, there are quite a lot of examples of the successful appli­
zation of the sputtered target and the high ion current density on the cation of hybrid techniques of this type. However, there are practically
substrate substantially modify such properties of deposited films as no publications in which the design of hybrid power supplies and its
density, roughness, resistivity, reflectivity, etc. [7,8]. Regulating the influence on the parameters of ion and atom flows interacting with the
pulse amplitude of the discharge current in HIPIMS, it is possible to substrate in magnetron discharge are considered. This paper presents a
control the ionization process through the excitation of certain particles brief overview of the existing hybrid HIPIMS + DCMS/MFMS systems
[9] and varying the density of the atomic and ionic fluxes. Many of and describes a newly developed hybrid power supply (PS), including its

* Corresponding author.
E-mail address: andrewsol@[Link] (А.А. Solovyev).

[Link]
Received 20 April 2020; Received in revised form 22 June 2020; Accepted 26 July 2020
Available online 29 July 2020
0042-207X/© 2020 Elsevier Ltd. All rights reserved.
V.O. Oskirko et al. Vacuum 181 (2020) 109670

operate with one magnetron. At the output, the power supplies are
connected in parallel via the separation diodes D1 and D2. The output
current is superimposed, thereby generating a sequence of unipolar
HIPIMS and MF pulses. Superimposed HIPIMS and DC/MF are used to
obtain graphite-like carbon films [23], MoS2-С composites [24], and TiN
[25] coatings with excellent mechanical and tribological properties.
Similar to the first-type, the third-type hybrid system also utilizes
two magnetrons, as shown in Fig. 1c. The difference is the type of
connection and power supply. The discharge is powered by alternating
polarity current and the system is called dual. The power supply outputs
are isolated from the vacuum chamber, and the bipolar voltage pulses
alternately sputter both targets allowing the target surface to be cleaned
from the dielectric film, and thus to compensate positive space charges.
These effects allow solving the problem of the anode loss and frequent
formation of electric arcs in magnetron sputter deposition of dielectric
coatings. Owing to these processes, the conventional mid-frequency
(40–300 kHz) dual MSS ensures a long-term, continuous reactive sput­
tering process and is often used in industrial conveyor units [26].
Several authors suggest using such systems for the TiO2 film deposition
[27] and non-reactive sputtering of Ti and Cu targets [28].
As is known, the discharge current amplitude strongly depends on
the target material and the target erosion (racetrack) depth. In the case
of symmetrical voltage pulses that can be obtained by using, for
example, a transformer, it is very difficult to regulate the discharge
current amplitude and the supplying power to each magnetron. Modern
power supplies for dual magnetron sputtering use transformerless bridge
Fig. 1. Types of hybrid systems for HIPIMS + MF magnetron sputtering. or half-bridge circuits that allow the independent adjustment of positive
and negative pulse parameters. MF and HIPIMS superposition is more
difficult ensured by dual MSS than by a single, because the output cur­
scheme and basic parameters. Special attention is paid to the design of
rent flows in both directions, and separation diodes cannot be used, as
the output pulse formers. The experimental results are obtained for the
shown in Fig. 1b. Other solutions must be used for matching the power
Al film deposition in hybrid HIPIMS + MFMS modes. The influence of
supplies. For example, Stranak, et al. [29] suggest high resistant re­
the power ratio of MFMS and HIPIMS is shown for such parameters as
sistors, which, however, increase power losses in the circuit.
the deposition rate, ion current density on the substrate and ion-to-atom
The proposed hybrid PS is comparable with a hybrid SIPP2000-20-
ratio.
500-D power supply analog (MELEC GmbH, Germany) [30] designed
for dual magnetron sputtering systems. Similar to the proposed hybrid
2. Overview of hybrid HIPIMS þ DCMS/MFMS systems
PS, the total power of the SIPP2000-20-500-D is 20 kW. The main output
parameters for the SIPP2000-20-500-D include Uout = ±1000 V, Iout =
The common magnetrons designed for DCMS can be used both in the
20 A, Imax = ±500 A, Fmf ≤ 50 kHz, Fhipims ≤ 2 kHz. The values of its
HIPIMS and hybrid HIPIMS + MFMS/DCMS systems. The main differ­
pulse and average output currents are higher than in the proposed
ence is in the power supply that allows easily to adapt the existing
hybrid PS, but the latter provides a higher output voltage and a wider
magnetron sputtering systems to hybrid sputtering by replacing a
range of pulse repetition frequency for MF and HIPIMS.
discharge power supply.
Moreover, a new approach to the power control is used in HIPIMS +
The hybrid HIPIMS + DCMS/MFMS systems available today can be
MFMS magnetron sputtering. In Ref. [31,32], it is demonstrated that the
divided into three types differing by a power supply and the type of its
power ratio of HIPIMS and MFMS can be controlled by varying the pulse
connection to the sputtering target. This is shown in Fig. 1.
frequency and number in the combined mode. In our power supply, the
The first-type system utilizes two (or more) independent magne­
power ratio of HIPIMS and MFMS is controlled by changing the duty
trons, one of which operates in the HIPIMS mode and the other in
cycle of the MF pulses. During the experiments, this method allows not
DCMS/MFMS mode (Fig. 1a). The mid-frequency pulse power supply is
only keeping unchanged the frequency and the number of MF pulses, but
provided for the target T1, which is sputtered in the MFMS mode, and
also avoiding significant changes in the voltage pulse amplitude on both
high-power power supply is provided for T2 target, which operates in the
targets. In addition, it allows avoiding long pauses between discharge
HIPIMS mode. Such systems do not require matching of the power
current pulses which can exert a negative effect on the discharge sta­
supplies. Some of magnetrons operate in the HIPIMS mode, while others
bility in reactive modes.
utilize the DC/MF mode allowing to improve the coating properties
without substantially reducing the deposition rate [17,18]. According to
Ref. [19,20], a 26 GPa hardness is obtained for the TiN and CrN 3. Hybrid HIPIMS þ MFMS power supply
multilayer system, in which the TiN and CrN layers are deposited by the
DC unbalanced and the high-power impulse magnetron sputtering, 3.1. Description of the hybrid power supply
respectively. This hardness is much higher than 11 GPa obtained for the
DCMS-deposited single TiN layer. It is also reported that the residual The proposed power supply utilizes a matching technique which
stress in the TiN coating can be varied from − 0.22 to − 11.67 GPa, and allows us to avoid parasitic currents and power losses. The current flow
the film texture can be altered from strong (111) to random (200), from one power supply to another occurs due to the different output
depending on the process conditions. The hybrid systems demonstrate voltage. During the pulse generation, some amount of the output current
impressive results in synthesizing nanocomposite TiAlN coatings [21, flows from the high-to low-voltage power supply. If the voltage is equal,
22]. no parasitic current occurs. The equilibrium voltage can be achieved,
In the second-type system shown in Fig. 1b, two power supplies when the power supplies generating the mid-frequency and high-power
pulses are connected in parallel both at the input and output.

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V.O. Oskirko et al. Vacuum 181 (2020) 109670

(interval III). In interval III, the current either remains constant, fluc­
tuates, or gradually decreases. In this interval, the current change is
associated with the partial discharge of the power supply storage ca­
pacity and gas rarefaction in the cathode region. Interval III may be
absent, if the discharge current has no time to saturate during the pulse
time. Interval IV is observed after the voltage removal, during which a
rapid and slow decrease is observed for the discharge current and
plasma concentration, respectively.
The behavior of the discharge current allows us to conclude that for a
fixed value of the discharge voltage, the discharge current amplitude can
be maintained between 0 and Im by changing the pulse duration within
the interval II. For example, at the point a with the pulse duration of 20
μs, the discharge current amplitude is 50 A. At the point b, the pulse
duration is 50 μs and the discharge current amplitude is 160 A. Among
others, the modulated pulse power magnetron sputtering (MPPMS)
technique is used to regulate the discharge power using the pulse time
Fig. 2. Pulses of discharge current and voltage in HIPIMS mode of Al
parameters [34]. A long strong pulse in MPPMS is sometimes called the
target sputtering. macropulse, which is a series of short micropulse. The discharge current
is regulated by varying the micropulse duration and intervals [35].
The proposed hybrid power supply (PS) presented in Fig. 3, consists
It is also not clear how to change the current amplitude if the voltage
of five units: two mid-frequency units (MFU-1 and MFU-2), two high
pulse amplitudes are equal. In other words, how to realize the transition
power-pulse units (HPPU-1 and HPPU-2) and one substrate biasing unit
between the MF and HIPIMS modes? To solve this problem, we used the
(SBU).
principle of dependence of the discharge current amplitude on the pulse
The MFU-1 includes a three-phase input rectifier, resonance inverter
duration which is explained by the oscillogram shown in Fig. 2. These
INV-1, transformer Tr1, high-frequency rectifier HFR-1, mid-frequency
oscillograms are obtained in the HIPIMS mode of the Al target
pulse former MFPF-1, and control system CS-1. The rectified line voltage
sputtering.
is supplied to the input INV-1, which generates sinusoidal current
One can see how the discharge current changes during the rectan­
waveform to supply the primary winding of the Tr1. The Tr1 increases
gular voltage pulse with duration of 100 μs. The current pulse can be
the voltage pulse amplitude and provides galvanic separation of the
divided into four intervals. It should be noted that some of them may be
MFU-1 output from the network. The secondary winding of the Tr1 is
absent under certain conditions. The interval I indicates the pulse delay
connected to the HFR-1 which supplies the MFPF-1. The latter generates
of the discharge current relative to the pulse of the discharge voltage.
unipolar voltage pulses of adjustable duration and frequency. The MFPF-
This is the time needed for ionization avalanches to grow and ionization
1 positive output, which is also the MFU-1 positive output, is connected
cycles to complete. The pulse delay depends on voltage, gas type [33]
to the HPPU-1, MFU-2 and HPPU-2 positive outputs. The MFPF-1
and pressure [6] and can vary from a few to more than 100 μs. If an
negative output is connected to the HPPU-1 negative output and then
additional ionization source is used, this delay may not occur, and the
to the target T1 of the dual MSS.
current rapidly grows immediately after the voltage applied. In interval
Unlike the MFU-1, the HPPU-1 has no input part that converts the
II the current increases. The rate of the current rise also depends on
line voltage. The high-power pulse former (HPPF-1) is powered by the
voltage, target material and gas pressure. During interval II, the plasma
HFR-1 locating in the MFU-1, thereby ensuring the equal supply voltage
concentration increases in the discharge gap. Gradually, the rate of
for the HPPF-1 and MFPF-1. This prevents the flow of parasitic currents
current rise lowers, and the discharge transfers to a quasi-steady state
from one unit to another. The HFR-1 output current I1 is divided into Imf1

Fig. 3. Block diagram of hybrid HIPIMS + MFMS + BIAS modular power supply.

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V.O. Oskirko et al. Vacuum 181 (2020) 109670

Fig. 4. Block diagram of output bipolar pulse formers in hybrid PS.

and Ihpp1 and flows to the MFU-1 and HPPU-1, respectively. At the parameters and provides communication with other hybrid PS units and
outputs, the current summation (I’mf1+ I’hpp1 = I′ 1) occurs after voltage a computer. It is important to synchronize the output pulses in tandem
conversion, and the resulting current flows through the load. Both the operation of the hybrid PS units. The pulse generation must be provided
output discharge current I′ 1 and the voltage pulse amplitude applied to in turn by each of the units supplying the magnetron discharge, without
Т 1 are regulated by changing the pulse frequency and duration in the overlap. Large currents can occur without these conditions resulting in
INV-1. the hybrid PS failure. A synchronized operation of the magnetron-
The architecture of the MFU-2 and HPPU-2 is similar to that of the discharge power supply and the SBU allows using the most favorable
MFU-1 and HPPU-1. The difference is in the connection of their negative time intervals for supplying the substrate biasing. In the case of arc or
outputs to the target T2. The pulse generation is provided in turn by each short-circuit, the units quickly disconnect the output voltage to protect
of the units supplying the magnetron discharge. During the output pulse the system units from overloads, thereby allowing to avoid the micro-
intervals, the formers can carry the current flowing in opposite direc­ droplet formation on the substrate. Therefore, the system response
tion. As a result, bipolar voltage pulses appear at the hybrid PS output. rate determines not only its reliability, but also the quality of the coating
The Т 1 target sputtering occurs when the MFU-1 and HPPU-1 generate obtained.
pulses, while the MFU-2 and HPPU-2 pass current through themselves. For a better understanding of the process of generating output bi­
The Т 2 target sputtering occurs when the MFU-2 and HPPU-2 generate polar pulses in hybrid PS, refer to Fig. 4 which shows the schemes of the
pulses, while the MFU-1 and HPPU-1 pass current through themselves. output pulse formers. Let’s start by considering the formers that power
The sputtering rate of each target can be controlled independently by dual MSS. In hybrid PS, the output pulse formers are designed as a two-
two inverters INV-1 and INV-2. transistor forward converter (TTFC), which includes the storage capac­
In addition to the power supplies, the hybrid PS includes the SBU. ity, two transistors, two diodes, and a choke. The application of the two-
The energy produced by the ion bombardment is controlled by changing transistor forward converter provides a number of advantages compared
the substrate bias voltage. It is thus possible to control the film growth with half- and full-bridge circuits, frequently used in bipolar power
and obtain the desired film structure and properties. The SBU input supplies, including the mentioned above SIPP2000-20-500-D. Owing to
arranges a three-phase rectifier, INV-3 inverter and Tr3 step-up trans­ the transistor in series connection with the diode in TTFC, no risk of
former. The latter has three windings, one of which is connected to the through-current occurs when the transistors are accidently all switched
INV-3, and two others – to the substrate bias pulse formers SBPF-1 and in half- and full-bridge converters. In addition, there is no jump at the
SBPF-2. The switch unit is used to connect the SBPF-1 and SBPF-2 in beginning of the voltage pulse at the load, which is induced by a choke,
parallel or in series. Either the output current or voltage is summed at because the energy stored in the choke returns to the storage capacitor.
the output, depending on the way of connection. This allows to signif­ Different transistors are used in the units. The MFPF-1 and MFPF-2
icantly expand the setting range for the output voltage and current. The utilize MOSFETs, which provide a 100 kHz frequency and a relatively
positive SBU output is connected to the vacuum chamber or the MSS low (50 A) pulse current. These parameters are sufficient for the
power supply busbar, and the negative output is connected to the sub­ implementation of the MFMS process. The HPPF-1 and HPPF-2 employ
strate holder. IGBTs, which ensure a 300 A pulse current at a lower repetition fre­
Each unit includes a control system (CS-1–CS-5) for the operation of quency of 5 kHz necessary for the implementation of the HIPIMS pro­
the inverter and output pulse former, that measures the output cess. Each former has capacitors (С1–С4) capable of storing energy

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V.O. Oskirko et al. Vacuum 181 (2020) 109670

Table 1 Inductance of coils L1 and L2 is 40 μH, whereas that of coils L3 and L4

Main parameters of hybrid PS. located in the HPPU-1 and HPPU-1 is 10 μH. This allows for a higher rate
Parameter MFU1 MFU2 HPPU1 HPPU2 SBU of the current rise during the high-power pulse generation.
Two-channel drivers DR1–DR4 are used to control transistors in half-
LV HV
mode mode bridges. The formers include voltage and current sensors V1–V4 and
А1–А4, respectively, which record the storage capacitor voltage and the
Average output 0.1 ÷ 10.0 kW ≤10.0 kW 0.1 ÷ 10.0 kW, step:
power step: 0.1 kW 0.1 kW
current consumption. These sensors provide feedback signals used to
PMF1+PHPP1+PMFU2+PHPPU2 ≤ 20 kW, stabilize the output parameters and protect the system: whenever the
PMF1+PHPP1 ≤ 10 kW, preset threshold readings are exceeded, the system suspends the gen­
PMFU2+PHPPU2 ≤ 10 kW eration of output pulses, charge of storage capacitors and transmits the
Average output 0.1 ÷ 10.0 A, ≤10.0 A 0.1 ÷ 0.1 ÷
signal to other units which also protect the system. The MFPF1 and
current step: 0.1 А 10.0 А 5.0 А
Pulse voltage 100 ÷ 1250 V, ≤1250 V 50 ÷ 100 ÷ MFPF2 together form a full-bridge that generates mid-frequency pulses
step: 1 V 1000 V 2000 V of both polarities at the hybrid PS output required for the dual MSS
Pulse current ≤50 A ≤300 A ≤50 A ≤25 A power supply. Similarly, the HPPF 1 and HPPF 2 form a bridge that
Pulse power ≤65 kW ≤375 kW ≤375 kW generates high-power bipolar pulses.
Pulse frequency 10 ÷ 100 kHz, 0.02 ÷ 5.00 kHz 1 ÷ 50 kHz, step: 1
step 1 kHz step: 10 Hz kHz
Table 1 shows the main process parameters of the developed hybrid
Duty cycle 5 ÷ 45%, step: 0.01 ÷ 25% 5 ÷ 45%, step: 1% PS. The power supply parameters highlighted in Table 1 can be regu­
1% lated by the user. The hybrid PS can be controlled by the panel or a
Pulse duration 2 ÷ 50 μs, step: 5 ÷ 250 μs, step: 1 2 ÷ 50 μs, step: 1 μs remote computer.
1 μs μs
Output Asymmetrical/symmetrical bipolar Unipolar pulse,
waveform pulse direct current 3.2. The substrate bias power supply unit
Stabilization voltage, voltage voltage, current,
mode current, power power The hybrid MSS may also include a power supply for the substrate
AC input 3 × 380 VAC 50/60 Hz biasing, which can be either constant or pulsed. Synchronization of
Cooling Air
Size 19′′ 19′′ 19′′
substrate biasing with mid-frequency and high-power pulses provides a
Weight 35 kg 22 kg 26 kg selection of the particles for the substrate bombardment. The ion type
Interface ModBus, RS485 (metal or working gas) bombarding the growing coating depends on the
time point of the bias voltage applied [36].
Let us consider the SBPF-1 and SBPF-2 circuits in Fig. 4, whose
enough to generate MF and HIPIMS pulses. The induction coils L1–L4 are
configuration is similar to that of the MFPF-1 and MFPF-2. The SBPF-1
arranged at the former outputs and intended for the restriction of the
and SBPF-2 outputs are connected to the load via the switch block
current rise rate. Inductance is selected with regard to the system
comprising five switches (S1–S5). S1 and S2 switches connect the positive
response rate and the maximum allowable output current of the former.
output with the vacuum chamber or the common positive output of the

Fig. 5. Transistor control pulses, discharge voltage and current pulses, ion current on the substrate in hybrid HIPIMS + MSMF (a) and MFMS (b) modes. (UVTx.x –
transistor control signals, UT1 and UT2 – voltage pulse amplitudes on targets 1 and 2 relative to the vacuum chamber walls, ID – discharge current, ISB – substrate bias
current, Thpp – high-power pulse period; Fhpp – high-power pulse frequency; Tmf – mid-frequency pulse period; tmf1 and tmf1 - mid-frequency pulse duration; thpp1 and
thpp2 – high-power pulse duration; tdelay1 and tdelay2 – high-power pulse delay).

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V.O. Oskirko et al. Vacuum 181 (2020) 109670

power supply units, respectively. The negative potential is supplied to Let us consider the discharge current and voltage output waveforms
the substrate either relative to the chamber or the target, which operates shown in Fig. 5. Since hybrid PS units possess low output inductance, the
as anode in the dual MSS. target voltage waveforms measured relative to the grounded chamber
Switches S3–S5 provide in-series or parallel connection of the SBPF-1 walls are almost rectangular. At the beginning of the negative pulse, the
and SBPF-2 units. When S3 and S5 switches are closed and S4 switch is whole voltage of the storage capacitor is applied to the target. The
open, the SBPF-1 and SBPF-2 outputs are connected in parallel. In this voltage then decreases due to lowering on the inductors restricting the
case, the unit works in a low voltage (LV) mode which could change rate of ID current rise. When the positive voltage is applied to the target
from 0 to Ubias. If S4 switch is closed and S3 and S5 switches are open, the and it operates as the anode in a discharge system, its potential increases
unit works in a high voltage (HV) mode which could change from 0 to relative to the chamber walls. The current has a triangular pulse
2⋅Ubias. In the latter case, the substrate bias voltage is two times higher waveform. When voltage is applied to the dual MSS targets, the current
than in the former case. Accordingly, when the unit works in a low ID linearly increases up to the maximum value. During the high-power
voltage mode, the current passing to the substrate may be two times pulses, the discharge current is higher than during mid-frequency pul­
higher. In other words, in the LV mode, the PS control system restricts ses owing to the longer duration (25 μs instead of 5 μs). At a 800 V pulse
the values of the pulse voltage and the average output current to 1000 V amplitude, the high-power pulse amplitude is 150 A, while the mid-
and 10 A, respectively. In the HV mode, these parameters are restricted frequency pulse amplitude is about 20 A. Multiplying the maximum
to 2000 V and 5 A, respectively. value of the discharge current by the voltage applied to the target at the
In switching the transistors VT5.1 and VT6.1 on, the negative bias end of the pulse (~600 V), we get the maximum value of 90 kW pulse
voltages of Ubias = VC5 = VC6 and Ubias = VC5 + VC6 are applied to the discharge power. After switching off the transistors, ID rapidly decreases
substrate in LV and HV mode, respectively. In switching the transistors due to the reactive energy recuperation stored in the inductors.
VT5.1 and VT6.1 off and closing the transistors VT5.2 and VT6.2, the sub­ For comparison, Fig. 5b shows the MFMS discharge current and
strate is connected to either the chamber or the dual MSS anode, voltage waveforms with operating parameters including 50 kHz mid-
depending on the position of S1 and S2 switches. frequency pulse repetition (Fmf = 1/Т mf); 40% duty cycle (kmf1 = kmf2
= tmf1/Tmf = tmf2/Tmf); 8 kW total discharge power; ~800 V discharge
4. Experimental details voltage; and 30 A amplitude of the current pulses. The MFPF-1 and
MFPF-2 are used only.
Fig. 5 shows the diagrams of transistor control pulses and the For the discharge initiation in the HPPF-1 and HPPF-2, additional
HIPIMS + MFMS and MFMS discharge current and voltage waveforms. resistance and diode (RD) circuits are used to ground the hybrid PS
The HIPIMS + MFMS process parameters include 3 kHz high-power outputs. When the initiation of the discharge has not yet occurred, and a
pulse frequency (Fhpp); 20 μs high-power pulse duration (thpp1 = positive voltage is applied to one of the targets, a diode opens in the
thpp2), 50 kHz mid-frequency pulse repetition (Fmf = 1/Т mf); 25% duty corresponding RD circuit. The vacuum chamber is connected to the
cycle (kmf1 = kmf2 = tmf1/Tmf = tmf2/Tmf). The total discharge power of target through the limit resistor, and the full output voltage is applied to
the hybrid PS is 8 kW; each magnetron with a 40 × 10 cm2 Al target, is the opposite target. As a consequence, the breakdown in a discharge gap
supplied with 4 kW. In the hybrid mode, 75% pertains to the HIPIMS and discharge ignition becomes much more possible.
power and 25% – to the MFMS. In addition to the discharge current and voltage pulses, one can see in
The high-power pulse duration Thpp can be divided into four main Fig. 5 how the ion current on the substrate changes at a constant bias
intervals tHPP1, tMF1, tHPP2 and tMF2 (Fig. 5a). The high-power pulse forms voltage of − 50 V. An 800 сm2 stainless steel sheet is used as a substrate
during the tHPP1 and sputters the target Т 1. Transistors VT3.1 and VT4.2 material. It is placed at a 10 cm distance from two aluminum targets 60
given in Fig. 4, are switched on for the time thpp1 resulting in the voltage × 10 cm2 in size. In the MFMS mode, despite the mid-frequency pulses,
on the target Т 1 being negative relative to the target T2. The discharge the ion current density on the substrate remains unchanged. The low
current ID in the interval thpp1 flows in the circuit С(+)3 -VT4.2-T2-T1-L3- discharge current amplitude and rather a high repetition frequency
VT3.1-A3-C(−3 ). The energy stored in the inductor L3 during the pulse, provide insignificant change in the plasma concentration near the sub­
transfers to the capacitor С3 through the reverse diode D3.2. After strate during the discharge current pulse generation. The HIPIMS +
switching off the transistors, a 30 μs pulse delay tdelay1 occurs, during MFMS mode is characterized by a three-fold increase in the substrate
which the plasma concentration lowers and the discharge gap resistance bias current ISB during the high-power pulse. Its maximum value reaches
increases. 2.2 A; the ion current density on the substrate is 2.75 mA/cm2. During
A high-power pulse that sputters Т 2 target generates during the tHPP2 the time interval between high-power pulses, the ion current reduces
interval. Transistors VT3.2 and VT4.1 are switched for the time thpp2 down to ~0.7 A (~0.9 mA/cm2).
resulting in the voltage on the target T2 being negative relative to the It must be specially noted that the pulse peaks of the ion current on
target T1. The discharge current ID changes direction and flows in the the substrate are observed at about 5 and 20 μs after the discharge-
circuit С(+)
4 -VT3.2-T1-T2-L4-VT4.1-A4-C4. The change in the voltage pulse current maximum. The ion current density on the substrate increases
amplitudes UT1 and UT2 on targets 1 and 2 relative to the grounded with increasing discharge current and plasma concentration near the
chamber can be seen in Fig. 5. Upon the pulse completion, the energy magnetic trap. The delay of the first pulse peak relative to the discharge-
stored in the inductor L4 recovers, and the pulse delay tdelay2 occurs. current maximum occurs due to the limited propagation velocity of ions
During tMF1 and tMF2 intervals, mid-frequency pulses form with the at a target–substrate distance. The second peak of the ion current ap­
mid-frequency pulse repetition Tmf. When transistors VT1.1 and VT2.2 are pears due to the propagation of an ion acoustic wave in the plasma upon
switched on for the time tmf1, the negative voltage is applied to the target a completion of the discharge current pulse [37,38].
Т 1. The discharge current ID flows in the circuit C(+) 1 -VT2.2-T2-T1-L1-
VT1.1-A1-C(−1 ). After switching off the transistors, a short pulse delay 5. Results and discussion
occurs, during which the energy stored in the inductor L1 transfers to the
capacitor С1 through the reverse diode D1.2. Upon the pulse completion, The capabilities of the developed hybrid PS allowed realizing and
the transistors VT1.2 and VT2.1 are switched on for the time tmf2. The comparing a large number of combined magnetron sputtering modes.
negative voltage is applied to the target Т 2, the discharge current ID We compared several modes in which the same discharge power was
changes the polarity and flows in the circuit С(+) 2 -VT1.2-T1-T2-L2-VT2.1- maintained in changing the ratio of MFMS and HIPIMS components. The
A2-C(−2 ). After switching off the transistors VT1.2 and VT2.1, the energy experiments were carried out on a vacuum installation with the dual
stored in the inductor L2 transfers to the storage capacitor С2 through the MSS inside, provided with the aluminum 60 × 10 cm2 targets. The
reverse diode D2.1. stainless-steel flat substrate-holder with an area of 800 cm2 was placed

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V.O. Oskirko et al. Vacuum 181 (2020) 109670

Table 2
Electric discharge parameters for the hybrid modes of pulsed magnetron sputtering.
Modes Fhpp, kHz kmf, % thpp, μs UT1, V UT2, V Imf, А Ihpp, А Pmf, kW Phpp, kW PD, kW Phpp/(Pmf + Phpp)
× 100%

1 – 40 20 894 864 9.2 0 8.1 0 8.1 0

2 1 40 843 812 7.3 2.5 6.1 2.1 8.1 25
3 2 35 860 834 4.7 4.7 4.1 3.9 8.1 50
4 3 25 849 813 2.4 7.1 2.1 5.9 8.0 75
5 4 20 840 820 0 9.6 0 8.0 8.0 100

Fig. 6. Dependence of Al deposition rate (a), ion current density on the substrate (b) and ion-to-atom ratio (c) on Phpp/(Pmf + Phpp) ratio in the HIPIMS + MFMS
hybrid mode.

at a 10 cm distance from the targets. The base pressure in the chamber Metal ions penetrate in the lattice site, thereby reducing the compressive
was 4 × 10− 4 Pa. The aluminum films were deposited on the silicon stresses in the deposited layers caused by the ion bombardment [37].
substrates in Ar atmosphere at 0.67 Pa pressure. A digital oscilloscope The ion mass is close to that of atoms forming the coating, allowing them
was used to record the discharge current and voltage pulse waveforms as to transfer energy more efficiently and form denser coatings at low
well as the ion current on the substrate. To measure the deposition rate, deposition temperatures [39]. The use of electric or magnetic fields al­
we deposited the aluminum films onto the glass substrates. The film lows for controlling the trajectory of metal ions, thereby eliminating the
thickness was detected on a Linnik interference microscope. Measure­ disadvantage of classical magnetron sputtering, namely the insufficient
ments of the ion current on a substrate were performed using the SBU directedness of the deposited material flow [40].
that provided a constant bias potential of − 50 V to suppress the electron A precise determination of the proportion of metal ions in the flow
current. Five modes differing by the power ratio of MFMS and HIPIMS bombarding the substrate requires specific measurements which fall
were selected in this experiment. The total discharge power was 8 kW (4 outside the scope of the work. Nevertheless, in Fig. 6b we present the
kW per magnetron). The main parameters of the selected modes are measurement results on the substrate ion current density. In contrast to
gathered in Table 2. the deposition rate, the total number of ions bombarding the substrate
Notation: Fhpp – high-power pulse frequency; kmf – mid-frequency increases with increasing Phpp proportion. The average ion current
duty cycle; thpp – high-power pulse duration; UT1 and UT2 – voltage density increases from 1.23 mA/cm2 in mode 1–1.73 mA/cm2 in mode
pulse amplitudes on targets 1 and 2, respectively; Imf –average mid- 5. The lower deposition rate and the higher ion current density on the
frequency pulse current; Ihpp – average high-power pulse current; Pmf substrate lead to a significant increase in the ratio between the ion flux Fi
– average mid-frequency pulse power; Phpp – average peak power; Pd – bombarding the substrate and the neutral atom flux Fa forming the
average discharge power. coating. This Fi/Fa, ratio as well as the energy Ei of bombarding ions are the
The MFU-1 and MFU-2 operated in power stabilization mode fundamental parameters used to control the structure and properties of
allowing to maintain automatically the average mid-frequency pulse coatings in the ion-assisted deposition processes [41,42]. The energy
power Pmf. The average peak power Phpp was regulated manually by amount delivered to the growing coating depends on these parameters.
changing Fhpp. In addition, the mid-frequency duty cycle kmf was Using the data obtained, it is possible to evaluate the change in the
adjusted to avoid a serious change in the discharge voltage. Fi/Fa ratio. The Al atom flux onto the substrate can be estimated by the
Diagrams in Fig. 6 show the dependences of the deposition rate, ion deposition rate and the coating density [43]. For simplicity, we neglect
current density and ion-to-atom ratio on the Phpp/(Pmf + Phpp) ratio. the presence of impurities in the coating and assume that the density of
As can be seen from Fig. 6а, an increase in the Phpp component re­ the deposited Al coating corresponds to the density of the target
duces the deposition rate. For example, in mode 5 (100% HIPIMS) the material:
deposition rate is two times lower than in mode 1 (100% MFMS). The v⋅ρAl
decrease in the deposition rate is a quite expected and can be explained FAl ≈ , (1)
mAl
by the increase in the ionization degree of the sputtered Al atoms and
their return to the target surface under the influence of an electric field. where, v is the deposition rate, mAl is the mass of Al atom (4.5 ⋅10− 26
kg),
On the one hand, this is an undesirable effect, since it reduces the per­ ρAl is the Al density (2.7 ⋅103 kg/m3).
formance of the coater unit. On the other hand, the decrease in the The ion flux can be estimated from the average density of the sub­
deposition rate indirectly indicates the higher degree of ionization of the strate ion current (see Fig. 5а):
sputtered particles and, consequently, the increased fraction of metal
Ji
ions bombarding the growing coating. The metal ion bombardment has Fi = , (2)
e
a distinct advantage over the argon ion bombardment of the substrate.

7
V.O. Oskirko et al. Vacuum 181 (2020) 109670

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