2SC2881-O/2SC2881-Y

Features
• Power Amplifier Applications
• Halogen Free. “Green” Device (Note 1)
• Epoxy Meets UL 94 V-0 Flammability Rating
NPN
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information) Silicon Power
Transistors

Maximum Ratings @ 25°C Unless Otherwise Specified

• Operating Junction Temperature Range: -55℃ to +150℃
• Storage Temperature Range: -55℃ to +150℃
• Thermal Resistance: 250℃/W Junction to Ambient
627
A
Parameter Symbol Rating Unit B .

Collector-Base Voltage VCBO 120 V

Collector-Emitter Voltage VCEO 120 V M
C E
Emitter-Base Voltage VEBO 5 V
Collector Current IC 800 mA
D
Base Current IB 160 mA G H
500
Collector Power Dissipation PC mW F

1000(Note2)
-

L L

Classification Of hFE 1 2 3

Rank O Y DIMENSIONS
Range 80-160 120-240 DIM
INCHES MM
NOTE
MIN MAX MIN MAX
Marking CO1 CY1
A 0.169 0.185 4.30 4.70
B 0.061 1.55 TYP.
Note 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
C 0.154 0.171 3.91 4.35
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
D 0.031 0.047 0.80 1.20
Note 2. Mounted on ceramic substrate (250mm2 x 0.8t) E 0.089 0.104 2.25 2.65
F 0.118 3.00 TYP.
G 0.013 0.020 0.33 0.52
H 0.015 0.021 0.38 0.53
Pin Configuration - Top View Internal Structure J 0.014 0.017 0.35 0.44
K 0.055 0.063 1.40 1.60
C C L 1.50 TYP.
0.059
M 0.108 2.75 TYP.

B 4VHHFTUFE
4PMEFS
1BE
-BZPVU
2.0 .2 Unit:mm
R0

B C E E
3.0

4.9
1.4
0.5

1.5 0.8x3

Rev.3-5-01072025 1/4 [Link]

 2SC2881-O/2SC2881-Y

Electrical Characteristics @ 25°C Unless Otherwise Specified

Parameter Symbol Min Typ Max Units Conditions

Collector-Base Breakdown Voltage V(BR)CBO 120 V IC=1mA, IE=0
Collector-Emitter Breakdown Voltage V(BR)CEO 120 V IC=10mA, IB=0
Emitter-Base Breakdown Voltage V(BR)EBO 5.0 V IE=1mA, IC=0
Collector-Base Cutoff Current ICBO 0.1 µA VCB=120V, IE=0
Emitter-Base Cutoff Current IEBO 0.1 µA VEB=5V, IC=0
DC Current Gain hFE 80 240 VCE=5V, IC=100mA
Collector-Emitter Saturation Voltage VCE(sat) 1.0 V IC=500mA, IB=50mA
Base-Emitter Voltage VBE 1.0 V VCE=5V, IB=500mA
Transition Frequency fT 120 MHz V CE=5V, IC=100mA

Collector Output Capacitance Cob 30 pF VCB=10V, IE=0, f=1.0MHz

Rev.3-5-01072025 2/4 [Link]

 2SC2881-O/2SC2881-Y

Curve Characteristics
Fig. 1 - Static Characteristics Fig. 2 - DC Current Gain Characteristics
150 1000
Conmmon Emitter 800uA Common Emitter
TA=25°C VCE=5V
TA=100°C
720uA
Collector Current (mA)

640uA

DC Current Gain
100 100
560uA
TA=25°C
480uA

400uA

320uA
50 10
240uA

160uA

IB= 80uA

0 1
0 1 2 3 4 5 6 7 8 9 10 11 12 1 10 100 800

Collector-Emitter Voltage (V) Collector Current (mA)

Fig. 3 - Collector-Emitter Saturation Voltage Characteristics Fig. 4 - Base-Emitter Saturation Voltage Characteristics
300 1200
Collector-Emitter Saturation Voltage (mV)

β=10
1100
Base-Emitter Saturation Voltage (mV)

250
1000

900
200
800
TA=25°C
150 700

TA=100°C 600
100
500
TA=100°C
TA=25°C 400
50
300
β=10
0 200
1 10 100 800 1 10 100 800

Collector Current (mA) Collector Current (mA)

Fig. 5 - Base-Emitter Voltage Characteristics Fig. 6 - Power Derating Curve

800 600
Common Emitter
VCE=5V
500
600
Power Dissipation (mW)
Collcetor Current (mA)

400
TA=100°C

400 300
TA=25°C

200

200
100

0 0
200 400 600 800 1000 1200 0 25 50 75 100 125 150
Base-Emitter Voltage (mV) Ambient Temperature (°C)

Rev.3-5-01072025 3/4 [Link]

 2SC2881-O/2SC2881-Y

Ordering Information

Device Packing

Part Number-TP Tape&Reel:1Kpcs/Reel

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Rev.3-5-01072025 4/4 [Link]