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Electronics Tutorial: Ionization & Resistance

This document is a tutorial for the Introduction to Electronics course at IIT BBS, containing four problems related to silicon crystals and semiconductor physics. It includes calculations for ionization fraction, resistance of n-type silicon, electron current density, and parameters for a pn junction. The problems require knowledge of various physical constants and semiconductor properties.

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Jeeban Jyoti
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2 views1 page

Electronics Tutorial: Ionization & Resistance

This document is a tutorial for the Introduction to Electronics course at IIT BBS, containing four problems related to silicon crystals and semiconductor physics. It includes calculations for ionization fraction, resistance of n-type silicon, electron current density, and parameters for a pn junction. The problems require knowledge of various physical constants and semiconductor properties.

Uploaded by

Jeeban Jyoti
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

Introduction to Electronics (EC2L001) IIT BBS

Tutorial-1

1. A silicon crystal has 5 × 1022 atoms per cm3 . Find what fraction of atoms is ionized
3
at 0 ℃ and 20 ℃. (B = 7.3 × 1015 cm−3 .K − 2 , Eg = 1.12 eV , k = 8.62 × 10−5 eV /K)
2. Find the resistance of a n-type silicon which is 5 µm long, 3 µm wide and 2 µm thick,
and having ND = 1016 at T=300 K. (Here µn = 1110 cm2 /V.s, and µp = 400 cm2 /V.s)
3. The linear electron-concentration profile is shown below. If n0 = 1017 cm−3 and
W = 1 µm, find the electron current density (µA/µm2 ). Given: Dn = 35 cm2 /s.

n(x)
n0

W x
Figure 1: Problem No. 3

4. For a pn junction NA = 1017 cm−3 and ND = 1016 cm−3 . Find V0 at T = 300 K and
the depletion region width W , xn and xp .

IIT BBS 1

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