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Semiconductor Conductivity and Transistor Gain

The document provides an overview of semiconductor properties, including conductivity and resistivity for metals, semiconductors, and insulators. It discusses charge concentration, current equations, and the dynamics of P-N junctions, as well as transistor configurations such as common base (CB) and common emitter (CE) amplifiers, detailing their current gains, voltage gains, and power gains. Additionally, it explains the relationship between current gains and transconductance in amplifiers.

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5 views2 pages

Semiconductor Conductivity and Transistor Gain

The document provides an overview of semiconductor properties, including conductivity and resistivity for metals, semiconductors, and insulators. It discusses charge concentration, current equations, and the dynamics of P-N junctions, as well as transistor configurations such as common base (CB) and common emitter (CE) amplifiers, detailing their current gains, voltage gains, and power gains. Additionally, it explains the relationship between current gains and transconductance in amplifiers.

Uploaded by

aditya
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SEMICONDUCTOR

Conductivity and resistivity


 P ( – m)  (–1m–1)
Metals 10–2 -10–6 102 – 108

semiconductors 10–5 -10–6 105 – 10–6

Insulators 1011 –1019 10–11 – 10–19


Charge concentration and current
 [ n =  e] In case of intrinsic semiconductors
 P type n >> e
i=i +i
e h

 e n = 2i
 Number of electrons reaching from valence bond to conduction bond.
 = A T 3/ 2e–Eg/2kT (A is positive constant)
  = e ( e m e +  n  n)
for  hype n = Na >> e.
for  – type e = Na >> h
V
 Dynamic Resistance of P-N junction in forward biasing =

Transistor
 CB amplifier
Samll change incollector current (ic )
(i) ac current gain  c = Samll changeincollector current (i )
e
Collector current (ic )
(ii) dc current gain  dc = Emitter current (i ) value of  dc lies
e
between 0.95 to 0.99
Changeinoutput voltage(V0 )
(iii) Voltage gain AV = Changein input voltage(V )
f
 AV = aac × Resistance gain
Change inoutput power (P0 )
Power gain =
(iv) Change in input voltage(PC )
 Power gain = a2 ac × Resistance gain
(v) Phase difference (between output and input) : same phase
(vi) Application : For High frequency
CE Amplifier
 ic 
  V = constant
(i) ac current gain ac = i
 b  CE
ic
(ii) dc current gain dc = i
b

V0
(iii) Voltage gain : AV = Vi =  ac × Resistance gain
P0
(iv) Power gain = P = 2ac × Resistance
i
(v) Transconductance (gm) : The ratio of the change in collector in
collector current to the change in emitter base voltage is called trans
ic AV
conductance i.e. gm = V . Also gm =
EB RL RL = Load resistance.
 
 Relation between α and β :    or  = 

1–  1 

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