PHYSICS 6 th

HYDAAR DIWAAN
Chapter seven
Solid-State electronics

Q1/ what are the property of valence electrons?

1- have more energy and are very weakly bound with the nucleus of their
atom compared to the electrons closest to the nucleus.
2- participate in chemical reaction.
3- determine the electronic properties of matter
Q2/ what is the secondary outer shell that is far from the nucleus
called? And what the electrons that occupy this shell called?
The secondary outer shell that is far from the nucleus is called the valence
shell, and the electrons that occupy this shell are called the valence
electrons.
Q3/ in hydrogen atom what is the meaning of zero level (E=0)? And
what the lowest amount of energy that an electron can have in
hydrogen atom?
(E=0) which is the highest level of atom energy, because the electron is
bind to the nucleus by attractive force, The lowest amount of energy that
an electron can have in hydrogen atom is (-13.6eV).
Q4/ what happens? Explain, if the electron in hydrogen gain energy
equal 13.6eV?
It escapes from the hydrogen atom (at the ground state).
Conductor: is a material that allows flow of electric current through it,
electric charges move freely in conductors like (copper, silver, gold and
aluminum).
Insulators: is a material that do not allow electric current to flow through
it in normal conditions. Valence electrons of insulators are strongly bound
to the nucleus, resistance of insulators is about (1010 − 1016𝛺𝑚).
Semiconductors material: that electric charges move less freely than
conductors. The specific electrical resistance of semiconductors ranges
between that of the specific resistance of conductors and insulators in
electric conductivity, which is around (10−5 − 108 𝛺𝑚).

Energy bands in solid materials

Q5/ mention the two types of energy? What are the properties for each
one?
- First band: called Valence Band It contains low allowed energy levels,
partially or completely full of electrons and cannot be empty. Its electrons
are called valence electrons, they cannot move among neighboring atoms
because they are so close to the nucleus and bound to the nucleus with
relatively large forces.
- Second band: called Conduction band, it contains high allowed energy
levels, higher than allowed energy levels of valence band. Its electrons are
called conduction electrons, these conduction electrons can move freely to
participate in electric conduction.

Forbidden energy gap: energy gap between valence band and

conduction band neither has allowed energy levels (nor it allowed
electrons to occupied it).
Q6/ What are the characteristics of energy bands in Conductors?
(Metals for example):
1. Valence bands overlap with conduction bands.
2. No forbidden energy gap between valence bands and conduction bands,
Consequently, valence electrons are free to move through conductors, thus,
these metals have high electrical conductivity.
3. Electrical conductivity of metal decreases when their temperature
increases due to increase in their electrical resistance (due to increase time
rate of vibrational energy of atoms and molecules).
Q7/ What is the reason for that the conductive material have Hight
conductivity?
- because there is No forbidden energy gap between valence bands and
conduction bands, Consequently, valence electrons are free to move
through conductors.
Q8/ Do metals have high electrical conductivity? explain that
- yes, it is, because valence electrons are free to move through conductors.
Q9/ the insulator has no electrical conductivity?

because the forbidden energy gap in the insulator is relatively wide (around
5eV) or more, electrons in valence band cannot pass forbidden energy gap
and move to conduction band when the supplied energy is less than
forbidden energy gap. As a result, valence band remains full of valence
electrons while conduction band is empty of electrons.

Q10/ what happens when placing a huge electric field or heat onto the
insulator?

might lead to collapse of the insulator and flow of a very little current
through insulator.
Q11/ what is the effect of increasing of heat in electrical conductivity
of conductors and semi-conductors?

Electrical conductivity of metal decreases when their temperature increases

due to increase in their electrical resistance, while the semi-conductors
when their temperature increases increase in electrical conductivity
because of increasing generate (electron-hole) concentrating.

Q12/at any conditions the intrinsic semiconductors behave like

insulators?
- At very low temperature (at zero Kelvin 0k), and absence of light,
intrinsic semiconductors behave like insulators.
Intrinsic semiconductors
Q13/ What is the most commonly used semiconductors in electronics
applications?
- Germanium (Ge) and Silicon (Si) are the most commonly used
semiconductors in electronics applications.
Q14/ How can make intrinsic semiconductor (like silicon) have electric
conductivity, by thermal effect?
- when the temperature of the intrinsic semiconductor increases to room
temperature (300K), valence electrons gain sufficient energy to break some
of covalent bonds from the source of (thermal energy) that enables them to
move from valence band to conduction band through forbidden energy gap.
Then these electrons are free in movement through conduction band.
Q15/ How the electron-hole pair is generated?
- When the electrons move from valence to conduction band, each
moving electron leaves behind an empty space in valence band, this spot
is called (hole) which acts as a positive charge. At this point, free
electrons generated in conduction band and equal n umbers of holes in
valence band, and with this process is generated what called electron-
Q/: What is the effective of increasing the temperature on generating
the electron-hole pair in semiconductor?
- time rate for generating the electron-hole pair increases when the
intrinsic semiconductor temperature increases. As the number of free
electrons moving from valence band to conduction band increase the
number of positive holes increases.

Q16/ Time rate of generating (electron-hole) pair in intrinsic

semiconductor depends on?(8 times wizary).
1-Temperature of semiconductor. 2-Type of semiconductor material.

Q17/ the direction of positive holes inside the crystal move in the
opposite direction of the electrons, in intrinsic semiconductors when
shed an electrical field? Explain?
Because the direction of positive holes inside the crystal is toward the
direction of the electric field while the electrons move in the opposite
direction of the electric field applied.
Q18/ What is the total current flowing through the intrinsic
semiconductor?

- is the sum of electrons currents and holes current , called Charge

carriers.
Fermi level A hypothetical level lies in gap between conduction band and
valence band, that determines whether the electrons may or may not be
occupied by the rest of the energy levels, Fermi level is the highest allowed
energy level that an electron can occupy at absolute zero (0K).
‫التعريف مهم جدا‬
Q/What determines whether the electrons may or may not be occupied
by the rest of the energy levels, and what is the meaning of it?

Fermi level A hypothetical level lies in gap between conduction band and
valence band, that determines whether the electrons may or may not be
occupied by the rest of the energy levels, Fermi level is the highest
allowed energy level that an electron can occupy at absolute zero (0K).

Q19/ In conductors, at zero Kelvin, where Fermi level is lies?

- In conductors, at zero Kelvin, Fermi level is lies above the region which
full of electrons in conduction band. The energy level occupied by these
electrons is below Fermi level.

Q20/ for intrinsic semiconductors, where is Fermi level lies?

- for intrinsic semiconductors, Fermi level lies in the middle of the

forbidden energy gap between conduction band and valence band.

Extrinsic semiconductors
Q21/ If the thermal effect on semiconductors increases electrical
conductivity, why resort to doping with trivalent or pentavalent?

- controlling electrical conductivity of the intrinsic semiconductor is not

possible by thermal effect method, therefore, it requires a better way to
control its electrical conductivity by adding atoms of pentavalent or
trivalent elements called impurities. Impurities are added carefully and
accurately (with rate of one to 108 approximately) at room temperature and
at very low rates in an intrinsic semiconductor crystal. This process is
called doping.
Q22/ Which is better to increases the electrical conductivity of
semiconductors heat or doping with impurities?
- Doping can control electrical conductivity of semiconductors and
increase it significantly due to increase in charge carriers (electrons and
holes) in the crystal compared to thermal effect.

Q23/ How to get the (N-type) Semi-conductor?

- To get an N-type semiconductor crystal, an intrinsic semiconductor
crystal (silicon or Germanium) should be doped by a pentavalent atom
(Antimony Sb for example). It should be carefully and controllably doped
at room temperature. Consequently, each atom an impurity displaces a
silicon atom from the crystalline structure and binds with four neighboring
silicon atoms. This binding process is done by four valence electrons out
of the five electrons of the impurity, as for the fifth valence electron, it is
left free in the crystalline structure.
Q24/ is the Donor atom considering charge carrier? ‫مهم‬
It is not a charge carrier because it does not participate in the electrical
conductivity of the doped semiconductor. It becomes a positive ion that
binds strongly with the crystalline structure

Q25/ What does Donor atom cause?

- donor atoms increase concentration of free electrons in conduction band,
and decrease concentration of positive holes in valence bond (originally
generated by thermal effect). Therefore, donor atoms add a new energy
level called donor level, which lies within forbidden energy gap and
exactly below conduction band. See figure. Donor level is occupied by
electrons released by donor atoms and gives its electrons to conduction
band. As a result, Fermi level rises and becomes close to conduction band.

Donor level: energy level lies within forbidden energy gap and exactly
below conduction band, separated between them fermi level, donor level
generates because of donor atoms and it’s occupied by donor electrons
released by donor atoms and gives its electrons to conduction band.
Q26/ the concentration of electrons in conduction band is larger than
concentration of holes is valence bond in (N-type) Semi-conductor?

- those electrons released by pentavalent impurities leave no holes in

valence band when move to conduction bond, (as in thermal effect). these
electrons don’t move from valence bonds but it moves from donor level,
which lies within forbidden energy gap and exactly below conduction
band.

Q27/ electrons are called Majority Carriers and positive holes, they
are called Minority carriers in (N-type) Semi-conductor?

- because the electrons are generated from doping and thermal effect
processes, while for positive holes, because they are generated by thermal
effect.

Q/ What does the Number of free electrons moving from valence band
to conduction band in N-type semiconductor at constant temperature
depend on?
depends on the percentage of donor atom that’s the crystal doped with.

Q28/ Why a semiconductor crystal after doped by pentavalent

impurities, is called N-type semiconductor? Or a negative crystal?

- because Majority Carriers of the charge are the electrons, while the
minority carriers are the positive holes.
Q29/ Is this crystal charge negative?

- net total charge of (N-type) crystal is zero, i.e., electrically neutral,

because it has an equal number of negative charges to that of the positive
charges.

(P-type) Semiconductor
Q30/ How to get the (P-type) Semi-conductor?
To get a (P-type) semiconductor crystal, it requires doping (carefully and
controllably) of an intrinsic semiconductor (silicon or germanium) with
trivalent impurities (like Boron B) atoms at room temperature. Therefore,
each impurity atom displaces a silicon atom of the crystalline structure and
bind with three neighboring silicon atoms. But the trivalent impurity leaves
a covalent bond lacking one electron, see figure, Therefore, a hole is
generated in the silicon crystal, which is doped by trivalent impurity and
each atom of trivalent impurity accepts an electron from the valance
electrons bind to four covalent bonds with four silicon atom and for this
reason trivalent impurity called Acceptor atom, like trivalent impurity
(Boron, aluminum and Indium).
Q31/ is the negative ion a charge carrier?
- No, the negative ion is not a charge carrier because it binds with the
crystalline structure strongly by (covalent bonds). It does not participate in
electrical conductivity of the doped semiconductor.

Q32/ What the trivalent impurity causes?

- the trivalent impurity causes a hole in valence band when accepts one
electron of valence electrons, (no transfer of extra electrons into
conduction band as in thermal effect). Which create Acceptor level: level
which lies within the forbidden energy gap and directly above valence
band. Fermi level drops and becomes close to valence band. See figure
beside.
acceptor level: energy level which lies within the forbidden energy gap
and directly above valence band separated between them fermi level,
acceptor level generates because of acceptor atom and it’s occupied by
holes released by acceptor atoms.

Q33/ Holes will be concentrated in valence band more than

concentration of electrons in conduction band in (P-type) Semi-
conductor?
- these holes create in valence band when accepts one electron of valence
electrons, (no transfer of extra electrons into conduction band as in thermal
effect).
Q34/ The holes in valence band are called majority carriers while
electrons in conduction band are called Minority carriers. Hence, we
have (P-type) semiconductor crystal?
- because the holes are generated from doping and thermal effect processes,
while electrons are generated by thermal effect.
Q35/ why a semiconductor crystal after doped by trivalent impurities
(like Boron), is called (P-type)? or the positive crystal?
- They are called (P-type) because Majority Carriers of the charge are the
positive holes in valence band, while the minority carriers of the charge are
the electrons in conduction band.
Q36/ is the P-type crystal charge positive?
- The net total charge of (P-type) crystal is zero, i.e., electrically neutral,
because it has an equal number of negative charges (free electrons in
conduction band and negative ions of trivalent impurities) equals to
positive charges (holes in valence band).
Q37/ What is the practical application for PN diode? 1- control
direction of the current or to change 2- improve output signals shape.
Q38/ How is Depletion region Created?
-the free electrons in (N) region close the (PN) junction spread (osmosis)
to (PN) region, generating positive ions in (N) region, holes move from
(P) region to (N) region through the junction, generating negative ions in
(P) region. Then, electrons combine with holes near the junction. This
process causes a thin region on the two sides of the junction containing
positive ions in (N) region and negative ions in (P) region, and is devoid
of charge carriers, this region is called Depletion region.

Depletion region: a thin region on the two sides of the junction

containing positive ions in (N) region and negative ions in (P) region, and
is devoid of charge carriers.

potential barrier: electric potential difference on both sides of (PN)

junction generates as a result of appearance positive ions in (N) region
and negative ions in (P) region.

Q39/The potential barrier in the (PN-diode) depends on?

1- the type of semiconductor.
2- rate of doped impurities
3- temperature of the material.

Q40/ how is the PN diode connected in Forward bias method?

The end of (PN-diode) is connected to the two terminals of a battery
(conductive wires and a resistance R) to determine the amount current
flow through the diode and to avoid diode damage, The positive terminal
of the battery is connected to (P) region of the diode, the negative
terminal of the battery is connected to (N) region of the diode, the
potential difference on the ends of diode should be greater than that on
the (PN) junction.
Q41/ depletion region narrows and potential barrier on (PN) junction
decreases in PN diode when it’s Forward bias? because the direction
of the electric field on the diode is opposite to direction of the electric
field on the potential barrier and even greater than it. Forward Current:
current flow through PN diode when resistance of diode decreases at
connected in Forward bias method.

Q42/ how is the PN diode connected in reverse bias method?

The end of (PN-diode) are connected to the two terminals of a battery
(through conductive wires and a resistance R). The negative terminal of
the battery is connected to (P) region of the diode and the positive
terminal of the battery is connected to (N) region of the diode.

Q43/ depletion region increases and the potential barrier on (PN)

junction increases in PN diode when it’s reverse bias?
because the direction of the applied electric field on the diode is toward
the direction of the electric field on the (PN) junction.

Reverse current: a very small current flows (can be neglected) through

the (PN-diode) when the resistance of the diode increases at reverse bias
method.

Q44/ what happens When voltage is increased in forward bias? And

what happen when If polarity of applied voltage is reversed (reverse
bias voltage)?
When voltage is increased in forward bias the amount of forward current
increases, If polarity of applied voltage is reversed (reverse bias voltage),
the flowing current through the crystal diode is almost zero.
 Some types of diodes

Q45/ what is the types of diodes?

1- Photosensitive diode 2- Photovoltaic diode or solar cell 3- Light
Emitting Diode (LED) 4- Current rectifier diode
Photosensitive diode
Q46/ Photosensitive diode how it connected? Photosensitive diode is
connected in reverse bias method before exposed the light on it

Q47/ what is the purpose of Photosensitive diode? 1- converts light

energy into electrical energy. 2- used in light detectors. 3- light intensity
meter.

Photovoltaic diode or solar cell

Q48/ Photovoltaic diode or solar cell how it connected? And what its
benefit?
This diode is connected in reverse bias method before exposed light on
the PN-junction region.
1- converts light energy into electric energy.
2- used artificial satellites as a power source.

Q49/ what is the purpose of connecting Photovoltaic diode in 1-

series combination 2- parallel combination ?

1- connected in series combination to increase potential.

2- connected in parallel combination to increase power

Q50/ Light Emitting Diode (LED) how it connected? And what its
benefit? it is connected in forward bias method; this diode converts
electrical energy into light energy. Also used in digital calculators and
clocks to show the numbers clearly.
 Q51/ what is the color that emitting from the Light Emitting
Diode (LED)? And what it depends on?
These diodes emit light in different colors (red, yellow and green)
There are other diodes, which emit infrared ray, according to the
material it is made of.
Q52/ what does Intensity of light from light emitting diode
depends on?
Depends on the amount of flowing forward current Intensity of light
from light emitting diode increases when the amount of flowing
forward current of the crystalline diode in its circuit increases.
(Directly proportional).
Q53/ what does Digital screens concept depends on?
Digital screens use the concept of diodes in the form of seven
segment. The illuminated number can be shown from (0-9) by
distributing the electric current on the designated diode.

Current rectifier diode

Q54/ what happens? Why? or alternating current if it passes

through PN diode?
converts the alternate current into a rectified half-wave current, when the
diode is connected to an alternating voltage source; one-half of the waves
(the positive polarity) makes it in forward bias, allowing the current to
pass through the circuit. For the other half –wave, it makes the diode bias
in reverse, then, it does not allow current flow in the circuit.

Q55/ what is the practical benefit of use Current rectifier diode?

This diode rectifies the alternating current into rectifier current in one
direction
 Transistor
Transistor: It is a device consisting of three regions made of a
semiconductor (silicon or germanium) separated by two junctions. The
three regions are symbolized by: Emitter (E), Base (B), and Collector
(C). the emitter is doped with a high rate of impurities, the base is
doped with a low rate of impurities, as for the collector regions, it has
medium number of impurities.

Q56/ what are the types of transistors?

1- PNP- transistor. 2- NPN-transistor

Q57/ what is the method of biasing of emitter and collector? Why?

emitter is always in forward bias because the emitter supplies the charge
carriers, while the collector in reverse biased because the collector
attracts these carriers through the base.

PNP-transistor

Q58/ is it possible? Why? The collector current (𝑰𝑪) bigger than the
emitter current (𝑰𝑬) in NPN-Transistor?
No, it’s not, because of the recombination at the base region between the
holes and electrons. Thus: (𝐼𝐶 = 𝐼𝐸 − 𝐼𝐵).
Q59/ base current (𝑰𝑩) is very small compared to emitter current
(𝑰𝑬)?
because the base region is thin and has less percentage by impurity
doping.
 Q60/why the base in transistor is doped with a low rate of
impurities?
Allow to flow as could as possible of free electrons or free holes from the
emitter to collector through the base that’s make the base current so
small.

Common –base PNP-amplifier (grounded base)

Q61/ what does the Amplification in a transistor depends on?
it depends on low-power input circuit control over the high-energy
output circuit.
Q62/ what does Common –base PNP-amplifier (grounded base)
characterized by?
1- Input circuit (emitter-base circuit) with a small impedance (because the
emitter –base junction is in forward bias), and an output circuit (collector
base circuit) with a very large impedance (because collector-base junction
is in reverse bias).
2- Bias Voltage a very small input circuit, while output circuit bias voltage
is high. Thus, voltage gain is very high: 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛(𝐴𝑉) =
𝑜𝑢𝑡𝑝𝑢𝑡 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 (𝑉𝑜𝑢𝑡 )
𝑖𝑛𝑝𝑢𝑡 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 (𝑉𝑖𝑛 )
3- Current gain is less than integer one.
Current gain is the ratio of output current (collector circuit current IC) to
(𝐼𝐶 )
input current (emitter current IE): 𝑐𝑢𝑟𝑟𝑒𝑛𝑡 𝑔𝑎𝑖𝑛( 𝛼) = (𝐼𝐸 )
𝑃𝑜𝑢𝑡
4- Power gain: 𝑝𝑜𝑤𝑒𝑟 𝑔𝑎𝑖𝑛(𝐺 ) =
𝑃𝑖𝑛
𝑝𝑜𝑤𝑒𝑟 𝑔𝑎𝑖𝑛(𝐺) = 𝑐𝑢𝑟𝑟𝑒𝑛𝑡 𝑔𝑎𝑖𝑛(𝛼) × 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛(𝐴𝑉)
5- The output signal has the same phase of the input signal. Collector
current changes in the direction of the emitter current itself.

Q63/ why it cannot use the Common –base PNP-amplifier (grounded

base) in current amplification?
Because the collector circuit current IC is less than input current (emitter
current IE) so the current gain is less than integer one. According to relation
(𝐼𝐶 )
𝑐𝑢𝑟𝑟𝑒𝑛𝑡 𝑔𝑎𝑖𝑛(𝛼) = (𝐼𝐸 )
Q64/ the output signal has the same phase of the input signal in
Common –base PNP-amplifier (grounded base), What is the
explanation for this?
The reason for this is that collector current changes in the direction of the
emitter current itself

Q65/ what does the Common-emitter (grounded emitter) PNP-

amplifier circuit is characterized by?
1- The current gain is the high output current (collector circuit current 𝐼𝐶)
is greater than the
input current (base current 𝐼𝐵), because: Current gain is the ratio of output
current (collector current circuit IC) to input current (base current IB).
(𝐼𝐶 )
𝑐𝑢𝑟𝑟𝑒𝑛𝑡 𝑔𝑎𝑖𝑛(𝛼) = (𝐼𝐵 )
2- Voltage gain (AV) is high (output voltage is greater than input
𝑜𝑢𝑡𝑝𝑢𝑡 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 (𝑉𝑜𝑢𝑡 )
voltage). 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛(𝐴𝑉) = 𝑖𝑛𝑝𝑢𝑡 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 (𝑉𝑖𝑛 )
3- Power gain (G) is very high (power gain equals voltage gain (AV) ×
current gain (a).
𝑃𝑜𝑢𝑡
Power gain: 𝑝𝑜𝑤𝑒𝑟 𝑔𝑎𝑖𝑛(𝐺 ) = 𝑃𝑖𝑛
𝑝𝑜𝑤𝑒𝑟 𝑔𝑎𝑖𝑛(𝐺) = 𝑐𝑢𝑟𝑟𝑒𝑛𝑡 𝑔𝑎𝑖𝑛(𝛼) × 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛(𝐴𝑉)
4- The output signal is out of phase with input signal phase difference
(180°), the reason is that collector current changes in reverse direction to
that of the base current.
Q66/ what happens? why? When an alternating signal voltage between
the two ends of input circuit of Common-emitter (ground emitter) PNP
amplifier?
it will change potential of the base. It is found that any small change in
base potential will significantly change (collector-base) current circuit.
Since these current flows through a load of high resistance (𝑅𝐿 ), it
generates a high potential difference through the load resistance, which
represents the potential difference of the output signal. The output
signal from the collector circuit is out of phase with the input signal in
the emitter signal (phase difference=180°) the reason is that collector
current changes in reverse direction to that of the base current.

Q67/ the input signal in the emitter signal (phase

difference=𝟏𝟖𝟎°). What is the explanation for this?

the reason is that collector current changes in reverse direction to

that of the base current.
 Problems of chapter 7
Transistor problems
𝑉𝑜𝑢𝑡 (𝐼𝐶 )
𝐼𝐵 = 𝐼𝐸 − 𝐼𝐶 𝐴𝑉 = 𝑉𝑖𝑛
( 𝛼) = (𝐼𝐸 )
OR ( 𝛼) =
(𝐼𝐶 )
(𝐼𝐵 )
𝑃𝑜𝑢𝑡
𝑝𝑜𝑤𝑒𝑟 𝑔𝑎𝑖𝑛(𝐺 ) = 𝑃𝑖𝑛
( 𝐺 ) = (𝛼) × (𝐴𝑉 )

𝑉2 𝑜𝑢𝑡
𝑃𝑜𝑢𝑡 = 𝐼𝑜𝑢𝑡𝑉𝑜𝑢𝑡 𝑃𝑜𝑢𝑡 = 𝐼 2𝑜𝑢𝑡𝑅𝑜𝑢𝑡 𝑃𝑜𝑢𝑡 =
𝑅 𝑜𝑢𝑡

𝑉2 𝑖𝑛
𝑃𝑖𝑛 = 𝐼𝑖𝑛 𝑉𝑖𝑛 𝑃𝑖𝑛 = 𝐼 2𝑖𝑛 𝑅𝑖𝑛 𝑃𝑖𝑛 =
𝑅 𝑖𝑛

Q1/ In a common-base (grounded-base) amplifier transistor circuit, if the

emitter current is (𝐼𝐸 = 3𝑚𝐴), collector current (𝐼𝐶 = 2.94𝑚𝐴), input
resistance (𝑅𝑖𝑛 = 500𝛺) and output resistance (𝑅𝑜𝑢𝑡 = 400𝐾𝛺), then
calculate:
1. Current gain (a) 2. Voltage gain (AV)

(𝐼𝐶 ) 2.94 × 10−3

( 𝛼) = = = 0.98
(𝐼𝐸 ) 3 × 10−3
𝑉𝑖𝑛 = 𝐼𝐸 𝑅𝑖𝑛 = 3 × 10−3 × 500 = 1.5𝑉
𝑉𝑜𝑢𝑡 = 𝐼𝐶 𝑅𝑜𝑢𝑡 = 2.94 × 10−3 × 400 × 103 = 1176𝑉
𝑉𝑜𝑢𝑡 1176
𝐴𝑉 = = = 𝟕𝟖𝟒 𝒗𝒐𝒍𝒕𝒂𝒈𝒆 𝒈𝒂𝒊𝒏
𝑉𝑖𝑛 1.5
Q2/ In a common-base (grounded-base) amplifier transistor circuit, if
power gain is (𝐺 = 768), voltage gain is (𝐴𝑉 = 784) and emitter
current(𝐼𝐸 = 3 × 10−3 𝐴) find base current (𝐼𝐵 ).
𝑝𝑜𝑤𝑒𝑟 𝑔𝑎𝑖𝑛(𝐺 ) = (𝛼) × (𝐴𝑉)
768 = 𝛼 × 784
768
𝛼= = 0.98
784
( 𝐼𝐶 )
0.98 =
3 × 10−3
𝐼𝐶 = 0.98 × 3 × 10−3 = 2.94 × 10−3 𝐴
𝐼𝐵 = 𝐼𝐸 − 𝐼𝐶
= 3 × 10−3 − 2.94 × 10−3 = 0.06 × 10−3𝐴

Q3/ In common emitter transistor circuit, if the emitter current is (𝐼𝐸 =

0.4𝑚𝐴) and base current is (𝐼𝐵 = 40𝜇𝐴), input resistance (𝑅𝑖𝑛 =
100𝛺), output resistance (𝑅𝑜𝑢𝑡 = 50𝑘𝛺). Calculate:
1. Current gain (a). 2. Voltage gain (AV). 3. Power gain (G).

𝐼𝐸 = 0.4𝑚𝐴 = 0.4 × 10−3𝐴 𝐼𝐵 = 40𝜇𝐴 = 40 × 10−6𝐴

𝑅𝑖𝑛 = 100𝛺 𝑅𝑜𝑢𝑡 = 50𝑘𝛺 = 50 × 103𝛺
𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶
𝐼𝐶 = 𝐼𝐸 − 𝐼𝐵 = 4 × 10−4 − 0.4 × 10−4 = 3.6 × 10−4𝐴
(𝐼𝐶 ) 3.6 × 10−4
( 𝛼) = = =9
(𝐼𝐵 ) 0.4 × 10−4
𝑉𝑖𝑛 = 𝐼𝐵 𝑅𝑖𝑛 = 0.4 × 10−4 × 100 = 4 × 10−3𝑉
𝑉𝑜𝑢𝑡 = 𝐼𝐶 𝑅𝑜𝑢𝑡 = 3.6 × 10−4 × 50 × 103 = 18𝑉
𝑉𝑜𝑢𝑡 18
𝐴𝑉 = = = 4500 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛
𝑉𝑖𝑛 4 × 10−3

3- (𝐺 ) = (𝛼) × (𝐴𝑉)
= 9 × 4500 = 40500
Q4/ In common emitter transistor circuit; calculate the current gain (𝑎),
emitter current (𝐼𝐸), if the base current is (𝐼𝐵 = 50𝜇𝐴) and collector
current (𝐼𝐶 = 3.65𝑚𝐴).

𝐼𝐵 = 50𝜇𝐴 = 50 × 10−6𝐴 𝐼𝐶 = 3.65𝑚𝐴 = 3.65 × 10−3 𝐴

(𝐼𝐶 ) 3.65 × 10−3
( 𝛼) = = = 73
(𝐼𝐵 ) 50 × 10−6

𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶 = 5 × 10−5 + 365 × 10−5 = 370 × 10−5𝐴

 ‫االسئلة االكثر تكرارا في الوزاري‬

Q/Silicon acts as insulator when:

Pure. b- In the dark. c. At absolute zero. d. All of the three choices (a,
b, c).

Q/ Free electrons in intrinsic semiconductor at room temperature

a. Valence band. b. Forbidden energy gap. c. Conduction band d.
Acceptor level.
Q/ Flowing current in intrinsic semiconductor is the result of:(
a. Free electrons only. b. Holes only. c. Negative ions.
d. Both electrons and holes.
Q/ Time rate for generating electron-hole pair increases in
semiconductor by
a. Adding pentavalent impurities. b. Adding trivalent impurities.
c. Increase the temperature. d. None of the above.

Q/. Electron-hole pairs are generated in intrinsic semiconductor by:

a. Recombination. b. Ionization. c. Doping. d. Thermal effect.

Q/at any conditions the intrinsic semiconductors behave like

insulators?
- At very low temperature (at zero Kelvin 0k), and absence of light,
intrinsic semiconductors behave like insulators.
Q/: What is the effective of increasing the temperature on generating
the electron-hole pair in semiconductor?
- time rate for generating the electron-hole pair increases when the
intrinsic semiconductor temperature increases. As the number of free
electrons moving from valence band to conduction band increase the
number of positive holes increases.
Q/Time rate of generating (electron-hole) pair in intrinsic
semiconductor depends on?(8 times wizary).
1-Temperature of semiconductor. 2-Type of semiconductor material.
Fermi level A hypothetical level lies in gap between conduction band and
valence band, that determines whether the electrons may or may not be
occupied by the rest of the energy levels, Fermi level is the highest allowed
energy level that an electron can occupy at absolute zero (0K).
‫التعريف مهم جدا‬

Q/What determines whether the electrons may or may not be occupied

by the rest of the energy levels, and what is the meaning of it?

Fermi level, A hypothetical level lies in gap between conduction band and
valence band, that determines whether the electrons may or may not be
occupied by the rest of the energy levels, Fermi level is the highest allowed
energy level that an electron can occupy at absolute zero (0K).

Q24/ is the Donor atom considering charge carrier? ‫مهم‬

It is not a charge carrier because it does not participate in the electrical
conductivity of the doped semiconductor. It becomes a positive ion that
binds strongly with the crystalline structure
Q/ What does the Number of free electrons moving from valence band
to conduction band in N-type semiconductor at constant temperature
depend on?
depends on the percentage of donor atom that’s the crystal doped with.
 Q/ What is the difference between N-type semiconductor and P-Type
semiconductor in terms of:
a. Type of doped impurity.
b. Majority charge carriers and minority charge carriers.
c. The level generated by each impurity and its position.

(N-type) Semi-conductor (P-type) Semi-conductor

1- a pentavalent atom (Antimony Sb for 1- trivalent impurities (like Boron B)

example).
2- electrons in conduction band, because they are 2- the holes in valence band because they are
generated from doping and thermal effect processes. generated from dopingand thermal effect processes.
positive holes, they are generated by thermal effect. while electrons in conduction band
are called Minority carriers
3- donor level, which lies within forbidden energy 3- Acceptor level, which lies within the forbidden
gap and exactly below conduction band, Donor level
energy gap
is occupied by electrons released by donor atoms and
gives its electrons to conduction band. and directly above valence band, therefore, Fermi level
As a result, Fermi level rises and becomes close to
drops andbecomes close to valence band.
conduction band.
Q/ What is the difference between Positive ions and hole in
semiconductors?

Positive ions hole

Generates as a result of pentavalent it is an electron-free site that arises

donor atom Antimony (Sb for from the extraction of one electron
example), loose the fifth electron. from a silicon or germanium atom
as a result of a thermal effect or
energy gain, or arising from the
extraction of one electron from a
silicon or germanium atom as a
result of grafting a semiconductor
material with an acceptable
impurity

It bonds with four neighboring free in movement

silicon atoms, so the impurity
becomes a positive ion.

It is not a charge carrier because it it has a role in electrical

does not participate in electrical conduction and it’s the Majority
conduction process for the charge Carriers in (P-type)
semiconductor because it binds semiconductor and Minority
with the crystalline structure. carriers in (N-type).

Q/ What is the practical application for PN diode?

1- control direction of the current or to change
2-improve output signals shape
Q/ Depletion in crystal diode at (N) region contains only:
[Link] electrons. b. Holes. c. Positive ions. d. Negative ions.
Q/ Generating of depletion region in PN crystalline diode?Explain
the free electrons in (N) region close the (PN) junction spread (osmosis)
to (PN) region, generating positive ions in (N) region, holes move from
(P) region to (N)
region through the junction, generating negative ions in (P) region. Then,
electrons combine with holes near the junction. This process causes a thin
region on the two sides of the junction containing positive ions in (N)
region and negative ions in (P) region, and is devoid of charge carriers, this
region.
Q/ Potential barrier in PN-diode crystalline depends on?(
1- type of the semiconductor
2- the percentage of doped impurities (increases when percentage of
doped impurities increase)
3- temperature of the material (increases while the temperature
increase).

Q/ Huge current flows in crystalline PN-diode circuit when

forward bias voltage increases?(
When crystalline PN-diode circuit is forward bias the depletion region
narrows and potential barrier on (PN) junction decreases, The (PN)
junction resistance decrease and huge current flows through it.

Q/ When potential barrier is increased in crystalline PN-diode is

forward biased, the amount of the forward current:
a. Increases. b. Decreases. c. Remains stable. d. Increases then
decreases.

Q/ Flowing current in photosensitive PN-diode depends on?

Intensity of light fall on the photosensitive PN-diode its directly
proportional.