Question Bank
SOF Batches – Electronics Part
1. What is the role of the depletion region in a P-N junction?
2. Define intrinsic and extrinsic semiconductors.
3. What is the role of doping in semiconductors?
4. Define the term “virtual Ground’ in operational amplifiers.
5. State the function of a Zener diode.
6. What do you mean by CMRR and give its ideal value?
7. Draw the symbol of a diode and explain the direction of current flow.
8. How is a transistor biased for amplification?
9. In a common base connection, current amplification factor is 0.8. If the emitter current is
1.2mA, determine the value of base current?
10. Define active, cutoff, and saturation regions of a transistor.
11. What is forbidden Energy gap for Insulator, Metal and Semiconductor? Explain in terms of
energy bands?
12. Define slew rate of an op-amp.
13. What is a rectifier? Name its types.
14. Why transistor is called current controlled device?
15. State the effect of temperature on the conductivity of semiconductors.
16. Find the resistance of an intrinsic Ge rod 1 cm long, 1 mm wide and 1 mm thick at 320 K. the
intrinsic carrier density 2.7 ×1029 m–3 is at 320 K and the mobility of electron and hole are 0.59
and 0.39 m2 v –1 s –1 . Define doping in semiconductor.
17. Find the value of β if (i) α = 0.9 (ii) α = 0.98 (iii) α = 0.99
18. List the ideal characteristics of an op-amp and briefly explain three practical applications.
19. If the intrinsic carrier concentration of silicon is 1.5×1010cm−3 and the donor concentration is
1016 cm−3, calculate the concentration of holes in the N-type semiconductor.
20. A silicon diode has a knee voltage of 0.7 V and is connected in series with a 1kΩ resistor across
a 5V supply. Calculate the current through the diode.
21. Calculate the DC output voltage of a full-wave rectifier with a peak voltage of 20V.
22. An inverting amplifier has Rf = 100 kΩ and Rin = 10 kΩ. Calculate the voltage gain.
23. An intrinsic semiconductor has electron mobility μn=1500 cm2/Vs and hole mobility μp=500 cm2/Vs. If
the intrinsic carrier concentration is 2.5×1013cm−3, calculate the conductivity at room temperature.
24. Given VCC=10V, RC=1kΩ, β=100, and VBE=0.7V, calculate the base resistor RBrequired for
saturation if VCE(sat)=0.2V.
25. Explain the difference between conductors, semiconductor and insulator.
26. Write the VI relationship of a forward biased PN junction diode. Explain the different terms.
27. Draw and explain non-inverting amplifier using OPAMP.
28. Derive the gain formula for inverting and non-inverting op-amp circuits.
29. Draw the integrator circuit using OPAMP and explain.
30. Establish the relationship between α and β in transistor configuration.
31. For the common base circuit shown in Fig., determine IC and VCB. Assume the transistor to be
of silicon.
32. Explain the working principle of a full wave rectifier using a centre-tapped transformer and
derive the expressions of different performance parameters.
33. A half wave rectifier has a peak voltage Vm = 20V. Calculate
(i) DC output voltage
(ii) RMS output voltage
(iii) Ripple factor
(iv) Rectification efficiency
34. Compare different types of rectifiers based on efficiency, ripple factor, and transformer
utilization factor.
35. Explain the construction, working, and characteristics of a Zener diode. Discuss its use in
voltage regulation.
36. What is ripple factor? How does it affect the output of a rectifier?