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EE3001 Solid State Devices Assignment 5

The document outlines Assignment #5 for the EE3001: Solid State Devices course, detailing various problems related to pn junctions, including electric field distribution, built-in potential, junction capacitance, and p-i-n structures. It provides specific values and conditions for calculations, encouraging students to solve the problems independently and seek help if needed. The assignment includes multiple parts that explore the effects of doping concentrations, temperature, and bias conditions on semiconductor devices.

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v.eswar2005
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16 views2 pages

EE3001 Solid State Devices Assignment 5

The document outlines Assignment #5 for the EE3001: Solid State Devices course, detailing various problems related to pn junctions, including electric field distribution, built-in potential, junction capacitance, and p-i-n structures. It provides specific values and conditions for calculations, encouraging students to solve the problems independently and seek help if needed. The assignment includes multiple parts that explore the effects of doping concentrations, temperature, and bias conditions on semiconductor devices.

Uploaded by

v.eswar2005
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

EE3001: Solid State Devices

TAs: Alias George (ee24d402@[Link]) and Binoy M (ee23s014@[Link])


Assignment #5

Try yourself to solve the problems with detailed steps. Take a limited time quiz to test
your understanding on related concepts.
Problems will be discussed in class. You need to contact TAs or teacher if you are unable
to do anything useful by yourself or with the help of your friends.
If needed, assume the following values by default unless otherwise specified: Si is
the default semiconductor; SiO2 is the default oxide; T @room temperature is 300
K; ni @room temp. = 1010 cm−3 ; k B T=0.026 eV (at room temperature); EG,Si = 1.12 eV
and temperature independent; at 300 K, Nc =3.2 × 1019 cm−3 , Nv =1.8 × 1019 cm−3 , µn =
1350cm2 /V.s, µ p = 450cm2 /V.s; Permittivity for vacuum: ϵ0 =8.85 × 10−14 F/cm, relative
permittivity: ϵr,Si =11.8, ϵr,SiO2 =3.9; pn diode dopants are completely ionized.

1. (2 points) Acceptor and donor concentration in the p- and n-side of an abrupt pn-
junction are NA = 4 × 1018 /cm3 and ND = 4 × 1017 /cm3 , respectively.
(a) Sketch (in scale) the electric field distribution from –X p0 to + Xn0 considering the
metallurgical junction at the origin. Here X p0 and Xn0 are the penetration depth of
the space charge region in p and n regions, respectively.
(b) Now if p-side doping is modified to NA = 8 × 1018 /cm3 , sketch the electric field
profile on the same plot.
(c) How will the plot in (a) appear at an elevated temperature?

2. (2 points) The built-in potential of an abrupt p-n junction is 0.75 V. If the depletion
layer width (W) and junction capacitance (C J ) are 1 µm and 10 pF when the reverse
bias (Vr ) is 1.25 V, what are the values of (a) C J and (b) W when Vr is 31.25 V?

3. (2 points) At T=300 K, measured voltage dependent inverse squared junction capac-


itance (1/C2j ) of an abrupt Si p++ n junction with cross sectional area of 100 µm2 pre-
dicts an x-intercept of 0.725 V and y-intercept of 1030 F −2 . If the n-sided doping is
given by M × 1014 cm−3 , find the value of M.

4. (2 points) A pn diode has NA =1016 cm−3 and ND =1015 cm−3 . Another identically
doped pn diode has an additional intrinsic layer introduced in between the p- and
n-sides leading to a p-i-n structure. The intrinsic or i-layer in the p-i-n structure has a
length of 2 µm.
(a) Under zero bias, calculate the ratio of the depletion capacitance of the p-i-n (Cj,pin (0))
and p-n (Cj,pn (0)) diodes.
(b) Under -5 V reverse bias, calculate the depletion capacitances of the p-i-n (Cj,pin (−5))
and p-n (Cj,pn (−5)) diodes.

1
(c) Find the ratios (Cj,pn (−5)/Cj,pn (0)) and (Cj,pin (−5)/Cj,pin (0)).
(d) Name an application where such p-i-n structure can be useful.

5. (2 points) A p+ n diode has non-uniform n-sided doping given by ND ( x )=ND0 ( x/x0 )m


cm−3 . Such a diode is being used as a bias-dependent variable capacitor p (C (V )) in a
local oscillator circuit producing a variable resonant frequency f r = 1/2π LC (V ). It
is found that f r ∝ V n .
(a) Should the diode be used in forward bias or reverse bias?
(b) If m = 0, find the value of n.
(c) If m = 1, find the value of n.
(d) What should be the value of m in order to ensure n = 1?

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