STD10PF06

P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK

STripFET™ II POWER MOSFET

TYPE VDSS RDS(on) ID

STD10PF06 60 V < 0.20 Ω 10 A

TYPICAL RDS(on) = 0.18 Ω
)
■

■ EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED
t( s
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■
3
■ LOW GATE CHARGE 3
2 1
■ APPLICATION ORIENTED 1

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CHARACTERIZATION
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■ THROUGH-HOLE IPAK (TO-251) POWER IPAK DPAK
TO-251 TO-252
PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252)
l e t
(Suffix “-1”) (Suffix “T4”)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")
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DESCRIPTION
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INTERNAL SCHEMATIC DIAGRAM
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
) -
high packing density for low on-resistance, rugged
c (s
based process. The resulting transistor shows extremely

t
avalanche characteristics and less critical alignment
steps therefore
reproducibility.
a remarkable
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manufacturing

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APPLICATIONS
■ MOTOR CONTROL

e P
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■ DC-DC & DC-AC CONVERTERS

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ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuous) at TC = 25°C 10 A
ID Drain Current (continuous) at TC = 100°C 7 A
IDM(•) Drain Current (pulsed) 40 A
Ptot Total Dissipation at TC = 25°C 40 W
Derating Factor 0.27 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature -65 to 175 °C
Tj Max. Operating Junction Temperature 175 °C
(•) Pulse width limited by safe operating area. (1) ISD ≤10A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed

March 2002 1/9

.
STD10PF06

THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 3.75 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 275 °C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit

IAR Avalanche Current, Repetitive or Not-Repetitive

10 A
(pulse width limited by Tj max)

EAS Single Pulse Avalanche Energy

125 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 25 V)

s )
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
c t(
Symbol Parameter Test Conditions Min. Typ.
d u Max. Unit

V(BR)DSS Drain-source ID = 250 µA, VGS = 0 60

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Breakdown Voltage

e P
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
le t 1
10
µA
µA

IGSS Gate-body Leakage

Current (VDS = 0)
VGS = ± 20V

b so ±1 µA

ON (*)
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Symbol Parameter
( s ) Test Conditions Min. Typ. Max. Unit

t
uc
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 4 V

od
RDS(on) Static Drain-source On VGS = 10 V ID = 5 A 0.18 0.20
Resistance

DYNAMIC P r
e
let
Symbol Parameter Test Conditions Min. Typ. Max. Unit

so
gfs (*) Forward Transconductance VDS = 25 V ID=5 A 2 5 S

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Ciss Input Capacitance VDS = 25 V f = 1 MHz VGS = 0 850 pF
Coss Output Capacitance 230 pF
Crss Reverse Transfer 75 pF
Capacitance

2/9
 STD10PF06

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on) Turn-on Delay Time VDD = 30 V ID = 5 A 20 ns

tr Rise Time RG = 4.7 Ω VGS = 10 V 40 ns
(Resistive Load, Figure 3)
Qg Total Gate Charge VDD= 48 V ID= 10 A VGS= 10 V 16 21 nC
Qgs Gate-Source Charge 4 nC
Qgd Gate-Drain Charge 6 nC

SWITCHING OFF
s )
Symbol Parameter Test Conditions Min. Typ. Max.

c t( Unit

td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 30 V
RG = 4.7Ω,
ID = 5 A
VGS = 10 V
40
10
d u ns
ns
(Resistive Load, Figure 3)
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tr(Voff)
tf
Off-voltage Rise Time
Fall Time
Vclamp = 48 V
RG = 4.7Ω,
ID = 10 A
VGS = 10 V
e P 10
17
ns
ns
tc Cross-over Time (Inductive Load, Figure 5)

le t 30 ns

SOURCE DRAIN DIODE

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Symbol Parameter

O b
Test Conditions Min. Typ. Max. Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
) - 10
40
A
A

VSD (*) Forward On Voltage

t ( s ISD = 10 A VGS = 0 2.5 V

c
du
trr Reverse Recovery Time ISD = 10 A di/dt = 100A/µs 100 ns
Qrr Reverse Recovery Charge VDD = 30 V Tj = 150°C 260 µC
IRRM
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Reverse Recovery Current (see test circuit, Figure 5) 5.2 A

P
(*)Pulsed: Pulse duration = 300 µs, duty cycle
(•)Pulse width limited by safe operating area.

e
1.5 %.

e t
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Safe Operating Area Thermal Impedance

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3/9
STD10PF06

Output Characteristics Transfer Characteristics

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ct(
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Transconductance P
Static Drain-source On Resistance

e
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t ( s
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P r
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Gate Charge vs Gate-source Voltage Capacitance Variations

4/9
STD10PF06

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

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c t(
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Source-drain Diode Forward Characteristics

e P
Normalized Breakdown Voltage Temperature

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t ( s
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P r
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bs
. .

5/9
 STD10PF06

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

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c t(
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Fig. 3: Switching Times Test Circuits For Resistive P
Fig. 4: Gate Charge test Circuit
e
Load

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P r
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Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
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6/9
 STD10PF06

TO-251 (IPAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204
)
0.212

s
t(
B3 0.85 0.033
B5 0.3 0.012

u c
B6 0.95

o d 0.037
C
C2
0.45
0.48
0.6
0.6
0.017
0.019
P r 0.023
0.023
D 6 6.2 0.236

e t e 0.244

G
E 6.4
4.4
6.6
4.6
o l 0.252
0.173
0.260
0.181
s
Ob
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370

)-
L1 0.8 1.2 0.031 0.047

t(s
L2 0.8 1 0.031 0.039

u c
d
ro
H

P
C

t e
A

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s
A3
C2

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A1

L2 D L
B3

B6

B5
B
3
=

=
B2

G
E

2
=

=
1

L1
0068771-E

7/9
STD10PF06

TO-252 (DPAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094

A1 0.9 1.1 0.035 0.043

A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025

s )
0.035

t(
uc
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017

o d 0.023

C2 0.48 0.6 0.019

r 0.023

eP
D 6 6.2 0.236 0.244

E 6.4 6.6

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0.252 0.260

G 4.4 4.6
s o 0.173 0.181

H 9.35
b
10.1

O
0.368 0.397

)-
L2 0.8 0.031

L4 0.6

t ( s 1 0.023 0.039

uc
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P r
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A

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C2

A1

bs
DETAIL "A"
C

O
A2

L2 D
DETAIL "A"
B
3
=

=
B2

G
E

2
=

=
1

L4
0068772-B

8/9
 STD10PF06

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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 2002 STMicroelectronics - All Rights Reserved

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