GaN Device Process Study
Development direction
Process Direction
PGaN activation 1. O2 RTA anneal
2. Two step (1) 750C 1min (2) 600C 5min
PGaN selective 1. Cl2/O2 base gas condition
2. Lower RF power
Surface passivation 1. SiN passivation
2. Low temperature quality: ICPCVD>PECVD
3. PECVD: lower power ,high temperature thicker SiN film get better
passivation condition
4. Pretreatment can choose N2 or NH3
Ohmic contact 1. Ti and Ta are not big different, But Ti is much cheaper than Ta.
2. Thinner Ti can get lower Rc
3. Recess is a point
Schottky contact 1. We can study W or TiN in our process flow
2. We can study PVD TiN and IMP TiN
PGaN activation
J.-D. Hwang, G.-H. Yang / Applied Surface Science 253 (2007) 4694–4697
Condition A B C D E F
Tool/Gas RTA/Air RTA/Air RTA/O2 RTA/O2 Furance/Air Furance/O2
First step 600C 15min 750C 1min 600C 15min 750C 1min 700C 700C
Second step 600C 5min 600C 5min 30 min 30 min
1. O2 could dissociate Mg–H complexes
2. high temperature process (750C for 1 min) could effectively break Mg–H bonds and low temperature process
(600C for 5 min) could further activate Mg acceptors in two-step RTA annealing.
PGaN high selective etch study
Summary
Gas condition Optimize condition Selectivity Etch rate
(GaN:AlGaN) (nm/min)
Cl2/O2 ICP: 100W RIE: 20W Cl2: 10sccm O2: 2sccm Pressure: 5mTorr 60:1 11
BCl3/SF6 ICP: 200W RIE: 60W BCl3: 15sccm SF6: 10sccm Pressure: 37.5mTorr 20:1 35
BCl3/Cl2 ICP: 400W RIE:120V BCl3: 10% Cl2: 90% Pressure: 30mTorr 70C 7:1 700
Cl2/Ar/O2 ICP: 1000W RIE: 100W Cl2: 30sccm Ar: 10sccm O2: 2sccm Pressure: 5mTorr 30-40:1 75
N2/Cl2/O2 ICP: 3000W Cl2: 30sccm N2: 10sccm O2: 2sccm Pressure: 3mTorr 25:1 5
Cl2/Ar ICP: 500W RIE: 20V Cl2: 20sccm Ar: 5sccm Pressure: 5mTorr 9:1 200
Development direction：
1. Cl2/O2 base gas condition
2. Lower RF power
Cl2/O2 ICP etch
Condition: Selectivity GaN ER
Parameter Range Established recipe Units
ICP (W) 100 0 W O2↑ - ↓
RIE (W) 15-40 20 W RIE power↑ - ↑
Cl2 (sccm) 10-20 10 sccm
O2 (sccm) 1-5 0 sccm
Pressure (mTorr) 5-10 5 mTorr
AlGaN Al 0.25 Ga 0.75
ICP: 100W RIE: 20W Cl2: 10sccm O2: 2sccm Pressure: 5mTorr with highest selective 60:1
J. Vac. Sci. Technol. A, Vol. 36, No. 3, May/Jun 2018
39 25
BCl3/SF6 ICP etch 38
20
Etch Rate (nm/min)
37
Parameter Range Units
Selectivity
15
36
ICP (W) 200 W GaN
35
RIE (W) 30-60 W Selectivity 10
BCl3: 15sccm
BCl3 (sccm) 15-20 sccm 34
SF6: 10sccm 5
SF6 (sccm) 5-10 sccm 33 ICP: 200W
Pressure (mTorr) 0-50 mTorr RIE: 60W
32 0
AlGaN Al0.22 Ga0.78 0 10 20 30 40
Pressure (mTorr)
40 25
GaN 40 25
35
Selectivity 35
20
30
Etch Rate (nm/min)
20
30
Etch Rate (nm/min)
25
Selectivity
15
25
Selectivity
BCl3: 20sccm 15
20
SF6: 5sccm 10
20
15
ICP: 200W 15 10
10 Pressure: 15mTorr BCl3+SF6: 25sccm GaN
5 10 ICP: 200W Selectivity 5
5
5 RIE: 60W
0 0 Pressure: 37.5 mTorr
0 10 20 30 40 50 60 70 0 0
0 10 20 30 40 50
Rf Power (W)
SF6 (%)
Selectivity GaN ER
SF6↑ ↑ ↑
RIE power↑ - ↑
SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES nternational
Pressure ↑ ↑ - Journal of High Speed Electronics and Systems %%BVol. 14, No. 3 (2004) 756-761
BCl3/Cl2 ICP etch
Parameter Range Units 700 20 800 20
ICP (W) 200-800 W 600
18 700 18
Etch rate (nm/min)
Etch rate (nm/min)
16 16
RIE (W) 50-250 V 500 14
600
14
Selectivity
Seletivity
500
Temperature 10-90 C 400
GaN
12
GaN
12
10 400 10
Pressure (mTorr) 5-40 mTorr 300 AlGaN 8 300
AlGaN 8
200 Selective 6 Selectivity 6
200
4 4
100 100 2
900 20 2
GaN 18 0 0 0 0
800
200 400 600 800 50 100 150 200 250
16
Etch rate (nm/min)
700 AlGaN
14 ICP power (W) Bias voltage (V)
600 Selectivity
Selecitive
12 700 20 700 20
500
10 18 18
400 600 600
8
Etch rate (nm/min)
Etch rate (nm/min)
16 16
300 6 500 14 500 14
Selectivity
200
Seletivity
4 12 12
400 GaN 400
100 2 10 10
0 0 300 8 300 GaN 8
AlGaN
0 20 40 60 80 100 6 6
BCl3/(BCl3+Cl2) (%) 200 200
Selectivity AlGaN
4 4
100 100
2 Selectivity 2
Selectivity GaN ER 0 0 0 0
0 20 40 60 80 100 -5 5 15 25 35 45
BCl3↑ ↓ ↓ Temperature (C) Pressure (mTorr)
ICP↑ - ↑
RIE power↑ - ↑
Pressure ↑ - ↑
Temperature↑ - -