Feature DIAC SCR (Thyristor) TRIAC GTO MOSFET IGBT
Type Bidirectional trigger Unidirectional Bidirectional Turn-OFF capable Voltage-controlle Hybrid: MOSFET +
diode controlled switch controlled switch SCR d FET BJT
No. of Terminals 2 3 (Anode, Cathode, 3 (MT1, MT2, Gate) 3 (Anode, Cathode, 3 (Drain, Source, 3 (Collector, Emitter,
Gate) Gate) Gate) Gate)
Control Signal Breakover voltage (no Gate triggering Gate triggering Gate-triggered ON, Gate voltage Gate voltage (VGE)
gate) gate-turned OFF (VGS)
Directionality Conducts in both Unidirectional Bidirectional Unidirectional Unidirectional Unidirectional
directions
Switching Speed Moderate Slow Slow Faster than SCR Very fast Slower than Mosfet
Turn-OFF Method Natural (at zero Natural (line Natural Gate signal (active Gate OFF pulse Gate OFF pulse
current) commutation) turn-OFF)
dv/dt sensitive No Yes Yes Less than SCR No No
Application Triggering TRIAC Rectifiers, inverters, AC phase control High-power SMPS,low-power Motor drives, UPS,
converters (light/fan dimmer) inverters inverters inverters
Major Carriers Both Majority/minority Majority/minority Majority/minority Majority Both (input – MOS,
(minority/majority) (electrons) output – BJT)
Device Type Diode-type Thyristor Dual thyristor Modified SCR Unipolar Bipolar
Snubber Needed? No Yes Yes Yes No No
Device Regions V-I Characteristics Description Important Points in V-I Graph
DIAC Forward & Reverse Conducts only after breakover voltage - Symmetrical- No conduction until VBO- After
(VBO) in both directions VBO, sharp current increase
SCR Forward Blocking, Forward Conducts only when forward biased + - Latching current (IL) to turn ON- Holding
Conduction, Reverse Blocking gate triggered current (IH) to remain ON- In reverse bias:
behaves like a reverse-biased diode
TRIAC Quadrant I, II, III, IV Conducts in both directions with gate - VI graph in all 4 quadrants- Similar to 2 SCRs in
triggering opposite directions
GTO Forward Blocking, Conduction, Conducts with gate pulse, turns off with - Similar to SCR in ON state- Turn-off requires
Turn-off region negative gate pulse gate pulse (not natural like SCR)
MOSFET Cut-off, Triode, Saturation Controlled by VGS – current flows when - Linear region (like resistor)- Saturation region
VGS > threshold (current constant)- Drain current controlled by
VGS
IGBT Cut-off, Active (Saturation), Like MOSFET, voltage-controlled; - Saturation like BJT- Gate control like MOSFET-
Breakdown combines input of MOSFET & output of High input impedance
BJT