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Sputtering Process Explained: Key Concepts

Sputtering is a process where high-speed particles are used to eject atoms from a target material, which then deposit onto a substrate to form a film. This process involves creating a plasma in a vacuum chamber, controlling the particle stream, and managing deposition rates and film quality. Key factors include the pressure in the chamber, the energy of the ions, and the composition of the target material, which can affect the uniformity and characteristics of the deposited film.

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0% found this document useful (0 votes)
10 views2 pages

Sputtering Process Explained: Key Concepts

Sputtering is a process where high-speed particles are used to eject atoms from a target material, which then deposit onto a substrate to form a film. This process involves creating a plasma in a vacuum chamber, controlling the particle stream, and managing deposition rates and film quality. Key factors include the pressure in the chamber, the energy of the ions, and the composition of the target material, which can affect the uniformity and characteristics of the deposited film.

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sajjad017861
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Sputtering

Instead of using heat to eject material from a source, we can bombard them with high speed particles. •
The momentum transfer from the particles to the surface atoms can impart enough energy to allow the
surface atoms to escape. • Once ejected, these atoms (or molecules) can travel to a substrate and
deposit as a film. • There are several considerations here: – Creating, controlling and directing a high
speed particle stream. – Interaction of these particles with the source surface and emission yields. –
Deposition of the emitted atoms on the substrate and film quality.

Some Terminology • Atomic particles can best be easily controlled by electromagnetic methods if they
are charged. A weakly charged gas of particles that exhibit collective behavior is called a plasma. • The
source material is called the target and the emitted atoms or molecules are said to be sputtered off.

Sputtering • So in sputtering, the target material and the substrate is placed in a vacuum chamber. • A
voltage is applied between them so that the target is the cathode and the substrate is attached to the
anode. • A plasma is created by ionizing a sputtering gas (generally a chemically inert, heavy gas like
Argon). • The sputtering gas bombards the target and sputters off the material we’d like to deposit.

Generating and Controlling the Plasma • Ions can be generated by the collision of neutral atoms with
high energy electrons. • The interaction of the ions and the target are determined by the velocity and
energy of the ions. • Since ions are charged particles, electric and magnetic fields can control these
parameters. • The process begins with a stray electron near the cathode is accelerated towards the
anode and collides with a neutral gas atom converting it to a positively charged ion. • The process
results in two electrons which can then collide with other gas atoms and ionize them creating a
cascading process until the gas breaks down. • The breakdown voltage depends on the pressure in the
chamber and the distance between the anode and the cathode. • At too low pressures, there aren’t
enough collisions between atoms and electrons to sustain a plasma. • At too high pressures, there so
many collisions that electrons do not have enough time to gather energy between collisions to be able
to ionize the atoms.

Glow Discharge Formation • Initially the current (charge flow) is small. As charges multiply the current
increases rapidly but the voltage, limited by supply, remains constant. • Eventually, there are enough
ions and charges for the plasma to be self-sustaining. • Some of the electron-atom collisions will
produce light instead of electrons and ions and the plasma will also glow accompanied by a voltage drop
(normal glow) • If the input power is increased further, the current density becomes uniform across the
cathode and we’ll be in the abnormal discharge regime. This is where sputtering operates.

Plasma Pressures • Unless there are enough collisions, the plasma will quickly die. • In order to have a
self-sustaining plasma, each electron has to generate enough secondary emission. • Since we want
collisions to occur, the pressure can not be too low. – The mean free path should be a tenth or less than
the typical size of the chamber. • Also, since we want the electrons to gain enough energy between
collisions, the pressure can not be too high. • This means discharge tube pressures around 10-1000
mTorr and plasma densities around 1010 – 1012 /cm3.
How Ions Sputter Atoms • When ions collide with surface atoms on the target, the energy transfer can
knock some of these atoms off the surface. • The key principle is energy and momentum conservation. •
In any collision, momentum is conserved. • If the collision is elastic, kinetic energy is also conserved. •
The energies required for sputtering are much higher than lattice bonding or vibrational energies (which
are the causes of inelastic interactions), therefore sputtering collisions can be considered elastic.

Deposition • Sputtered atoms from the target make their way on to the substrate through diffusion. •
Ions and neutralized gas atoms may also embed on the substrate as impurities. • The ions incident on
the substrate may also re-sputter the surface. • Chemical reactions may occur.

Deposition Rate • It is proportional to the sputtering yield. • An optimum pressure exists for high
deposition rates. – Higher pressure means more collisions and ions. – Lower pressure means less
scattering.

Alloy Composition Issues • If a target is made up of several atoms with different sputtering yields, initial
film composition can be off. • However, sputtering yield variations are smaller compared to vapor
pressure variations. Therefore the initial layers of film will be more closely related to the target
composition. • Also, since temperatures are lower and melting is not an issue, diffusive homogenization
at the substrate is less likely. • Finally, any initial disparities will eventually correct themselves as the
amount of the faster sputtering component at the target reduces.

Compound Issues • While most of the previous discussion is applicable to compounds there is an
interesting issue. • If the target temperature is too low, ion bombardment can result in amorphization of
crystalline targets and isotropic sputtering. • Increasing the target temperature anneals the surface as it
sputters, thereby keeping the crystalline structure and a more directional sputtering.

Step Coverage and Film Uniformity • Angular distribution of sputtering depends on the pressure. •
Lower pressures result in a more directed flow which results in less uniform films. • Higher pressures
result in more isotropic flow and better coverage. • Uniform films also require larger targets.

Advantages • Not a line of sight method – Can use diffusive spreading for coating – Can coat around
corners • Can process alloys and compounds. – High temperatures are not needed – Even organic
compounds have been sputtered. • Can coat large areas more uniformly. • Large target sources mean
less maintenance.

Common questions

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Pressure affects the angular distribution of sputtering by influencing the flow of sputtered material. At lower pressures, the sputtered atoms travel in a more directed flow, resulting in less uniform films due to less scattering. Conversely, higher pressures lead to more isotropic flow, resulting in better film coverage and uniformity due to increased scattering, which ensures atoms spread more evenly across the substrate. Larger targets are also needed to ensure uniform films .

Glow discharge formation is a crucial step in the sputtering process, where initial electron multiplication creates a plasma that can sustain itself. As electrons rapidly ionize the sputtering gas atoms, the number of ions and charges increases, producing the glow accompanied by a voltage drop (normal glow) as part of the plasma. With higher power input, the current density becomes uniform, reaching the abnormal discharge regime, which is optimal for sputtering .

Controlling plasma density and pressure is critical in the sputtering process to maintain a self-sustaining plasma and ensure efficient energy transfer for sputtering. Plasma pressures typically range from 10-1000 mTorr to balance collision frequency: low pressures reduce collisions needed to sustain the plasma, whereas high pressures prevent electrons from gaining sufficient energy between collisions. The plasma density, around 1010 - 1012 /cm3, must be sufficient for continuous ionization, supporting the self-sustaining nature of the plasma and ensuring effective momentum transfer to sputter atoms .

Target temperature significantly influences the sputtering process. At low temperatures, ion bombardment can lead to amorphization, causing isotropic sputtering and degradation of the crystalline structure. However, as temperature increases, the surface anneals, maintaining crystallinity which supports directional sputtering. This factor is crucial for preserving material properties and achieving desired deposition patterns .

Sputtering gas selection focuses on the need for a chemically inert and heavy gas to promote effective momentum transfer without undesirable chemical reactions. Argon is typically used because it meets these criteria and is efficient in energy transfer for ionizing and sputtering the target material. The choice of gas affects plasma stability and sputtering efficiency, making inertness and mass critical factors .

Sputtering is advantageous as it is not a line-of-sight method, allowing for coating around corners due to diffusive spreading. It processes alloys and compounds without needing high temperatures, which can even enable the sputtering of organic compounds. Additionally, sputtering can coat large areas uniformly with large target sources, reducing maintenance needs and enabling more consistent film quality .

In the sputtering process, the cathode-anode setup is essential for generating plasma. The target material acts as the cathode, and the substrate is connected to the anode. A voltage applied across them accelerates stray electrons that ionize the sputtering gas, often Argon, creating plasma through continued collisions. This plasma is responsible for the ion bombardment that sputters atoms from the target material to the substrate, allowing deposition to occur .

Optimizing deposition rate in sputtering involves managing sputtering yield and chamber pressure. The deposition rate is directly proportional to the sputtering yield, which can vary based on material properties and the energy of bombarding ions. An optimal chamber pressure balances enough atoms and ions for collisions without excessive scattering. Pressure influences the scattering and travel path of sputtered atoms, affecting deposition efficiency and uniformity .

In sputtering, controlling charged particles—ions—is achieved using electric and magnetic fields, given their charge. The fields regulate ion velocity and energy, crucial for effective sputtering. Proper control ensures optimal momentum transfer to eject target atoms and maintain the plasma environment by preventing excessive or insufficient ionization, which could impair sputtering efficiency and film quality .

When sputtering alloys, a challenge is maintaining the initial film composition close to that of the target material, as different atoms in an alloy may have varied sputtering yields. Over time, differences tend to mitigate as the faster sputtering components decrease. In compound sputtering, at low target temperatures, ion bombardment may lead to amorphization, resulting in isotropic sputtering. Increasing temperatures can keep the crystalline structure, aiding more directional sputtering .

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