80N06/F80N06/I80N06/
E80N06/B80N06/D80N06
80A 60V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power MOSFETS
2 D VDS = 60V
Used advanced trench technology design, provided
excellent Rdson and low gate charge. Which accords with
G RDS(on) (Type)= 7mΩ
the RoHS standard.
1
3 S ID = 80A
2 Features
● Fast Switching
● High avalanche Current
● Low On Resistance
● Low Gate Charge
● Low Reverse Transfer Capacitances
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test TO-220C TO-220F TO-262
3 Applications
● Power switching applications
● DC-DC converters
● UPS power supply
● LED Boost TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Ratings (Tc=25℃,unless otherwise noted)
Value
Parameter Symbol 80N06/I80N06/E80N06 Units
F80N06
/B80N06/D80N06
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGS ±25 V
Drain Current(continuous) ID 80 A
Drain Current(continuous)(T=100℃) ID(100℃) 56 A
Drain Current(Pulsed)(1) IDM 280 A
Avalanche Current(4) IAS 20 A
Single Pulse Avalanche Energy(4) EAS 100 mJ
Ta=25℃ PD 2 2 W
Maximum Power Dissipation
Tc=25℃ PD 160 48 W
Isolation Voltage VISO / 2500 V Title
Operating Junction Temperature Range TJ -55～175
Size N u mb er
℃ D
D ate: 1 0 -A p r-2 0 1 7
Storage Temperature Range
5 6
Tstg -55～175 7
℃ File: D :\ Pr og ram Files \p ro tel 99 s e\
High Temperature(tin solder) TL 300 ℃
4.2 Thermal Characteristics
Value
Parameter Symbol 80N06/I80N06/E80N06 Unit
F80N06
/B80N06/D80N06
Thermal Resistance Junction-to-Case RθJC 0.938 3.125 ℃/W
Thermal Resistance Junction-to-Ambient RθJA 75 75 ℃/W
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4.3 Electrical Characteristics (Tc=25℃,unless otherwise noted)
Value
Parameter Symbol Test Condition Units
Min Typ Max
Off Characteristics
Drain-source Breakdown
VDSS ID=250μA,VGS=0V 60 72 -- V
Voltage
Zero Gate Voltage Drain VDS=60V,VGS=0V,TC=25℃ -- -- 1 μA
IDSS
Current VDS=48V,VGS=0V,TC=125℃ -- -- 100 μA
Gate-to-Body Leakage
IGSS VGS=±25V,VDS=0V -- -- ±100 nA
Current
On Characteristics
Gate threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V
Drain-Source on-state
RDS(on) VGS=10V,ID=40A -- 7 8.4 mΩ
Resistance
Gate Resisitance RG VDD=0V,VGS=0V,f=1MHz -- 2.6 -- Ω
Dynamic Characteristics
Input Capacitance Ciss -- 5010 --
Output Capacitance Coss -- 335 --
VGS=0V,VDS=30V,f=1MHz pF
Reverse Transfer
Crss -- 305 --
Capacitance
Switching Characteristics
Turn-on Delay Time td(on) ID=40A, -- 28 --
Turn-on Rise Time tr VDS=30V, -- 64 --
nS
Turn-off Delay Time td(off) VGS=10V, -- 66 --
Turn-off Fall Time tf RGEN=3Ω -- 28 --
Total Gate Charge Qg -- 77 --
Gate-to-Source Charge Qgs -- 18 --
ID=40A,VDS=50V,VGS=10V nC
Gate-to-Drain(“Miller”)
Qgd -- 31 --
Charge
Drain-Source Diode Characteristics
Diode Forward Voltage(3) VSD VGS=0V,IS=80A -- -- 1.3 V
Diode Forward Current IS -- -- 80 A
Reverse Recovery Time(3) trr -- 42 -- nS
TJ=25℃,IF=40A,
Reverse Recovery
Q rr dI F /dt=100A/μS,V GS=0V -- 55 -- nC
Charge(3)
Notes：
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: L=0.5mH,ID=20A,VDD=50V,VGS=10V,Start TJ=25℃.
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5 Typical characteristics diagrams
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5 Typical characteristics diagrams(continues)
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5 Typical characteristics diagrams(continues)
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6 Typical Test Circuit and Waveform
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6 Typical Test Circuit and Waveform(continues)
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7 Product Names Rules
FXXNEXX
Rated Voltage Code
With 2 Digital,For Example:
Packaging Code 60 on behalf of 600V
220F: F 220: Nothing 06 on behalf of 60V
251: B 252: D
262: I 263: E
Rated Current Code Special Function Code
With 1-2 Digital E on behalf of build-in ESD
For Example: Nothing on behalf of not ESD
4 on behalf of 4A
10 on behalf of 10A
08 on behalf of 0.8A
Channel Polarity Code
N on behalfof N channel
Pon behalf ofP channel
8 Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
80N06 TO-220C 80N06 Pb-free Tube 1000/box
F80N06 TO-220F F80N06 Pb-free Tube 1000/box
I80N06 TO-262 I80N06 Pb-free Tube 1000/box
E80N06 TO-263 E80N06 Pb-free Tape ＆ Reel 800/box
B80N06 TO-251 B80N06 Pb-free Tube 3000/box
D80N06 TO-252 D80N06 Pb-free Tape ＆ Reel 2500/box
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9 Dimensions
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9 Dimensions(continues)
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9 Dimensions(continues)
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10 Attentions
Jiangsu Donghai Semiconductor Technology CO.,LTD. reserves the right to change the
specification without prior notice! The customer should obtain the latest version of the information
before making the order and verify that the information is complete and up to date.
It is the responsibility of the purchaser for any failure or failure of any semiconductor product under
certain conditions. It is the responsibility of the purchaser to comply with safety standards and to
take safety measures in the system design and machine manufacturing of Donghai products in
order to avoid potential risk of failure. Injury or property damage.
Product promotion is endless, our company will be dedicated to provide customers with better
products.
11 Appendix
Revision history:
Date REV. Description Page
2017.05.09 1.0 Original
Jiangsu Donghai Semiconductor Technology CO.,LTD. Rev. 1.0
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