UNIT: 1
2 MARKS MOST IMPORTANT QUESTIONS
Q1. Why Si is preferred over Ge for manufacturing of electronics
devices?
Q2. Explain the effect of temperature on conductivity of a
semiconductor.
Q3. Distinguish between avalanche and zener breakdown.
Q4. Calculate the dynamic forward and reverse resistance of a p -n j
unction diode when the applied voltage is 0.25 V at T=300 K given
lO =2μA.
Q5. Draw the V-1 characteristic of a zener diode regulates the
voltages.
Q6. Differentiate the following:
a. avalanche and Zener breakdown
b. half wave and full wave rectifier
c. clipper and clamper circuits
7 MARKS IMPORTANT QUESTIONS
Q1. Explain the V-I characteristics of pn junction [Link] draw
well labelled charateristics.
Q2. Explain reverse breakdown of the diode.
Q3. Explain the working of full wave and half wave rectifier . Also
draw input and output waveform with proper diagram.
Q4. Derive the expression for following:
a. DC voltage and DC current
b. RMS valve of current
c. Ripple factor
Q5. What do you mean by clamper circuits. Explain how they are
differ for clipper circuits with proper waveform.
Q6. Explain how Zener diode is used as Shunt [Link] explain
voltage multipler circuits with proper diagram.
Q7. Explain the following:
a. LED
b. Photodiode
c. Tunnel diode
d. Varactor diode