CMOS Inverter Design and Simulation Report
1. Introduction
This report presents the design and simulation of a CMOS inverter using NMOS and PMOS transistors. The
goals are:
- To understand its operation and Voltage Transfer Characteristic (VTC).
- To analyze noise margins, propagation delay, and power consumption.
- To use simulation tools like LTspice, Ngspice, or Cadence Virtuoso for accurate analysis.
2. CMOS Inverter Overview
Schematic Description:
- PMOS: Source to VDD, Gate = Input, Drain = Output
- NMOS: Source = GND, Gate = Input, Drain = Output
The inverter output is taken from the node connecting both drains.
3. Simulation Tool: LTspice
Tool Setup:
- Download from Analog Devices website.
- Create schematic, add NMOS/PMOS models.
- Run DC and transient simulations.
4. Schematic Implementation in LTspice
Example SPICE models:
.model NMOS NMOS (LEVEL=1 VTO=0.7 KP=120u LAMBDA=0.01)
.model PMOS PMOS (LEVEL=1 VTO=-0.7 KP=40u LAMBDA=0.01)
Circuit Setup:
VDD Vdd 0 DC 5
Vin in 0 DC 0
CMOS Inverter Design and Simulation Report
M1 out in Vdd Vdd PMOS L=1u W=5u
M2 out in 0 0 NMOS L=1u W=1u
5. DC Analysis - VTC Curve
Simulation Setup:
.dc Vin 0 5 0.01
.plot DC V(in) V(out)
Expected Result:
- VTC curve shows inverter switching behavior.
6. Transient Analysis - Pulse Input
Input Pulse:
Vin in 0 PULSE(0 5 0 1n 1n 10n 20n)
.tran 0.1n 100n
.plot TRAN V(in) V(out)
Expected Output:
- Output inverts input with observable delay.
7. Key Parameters
A. Noise Margins:
NML = VIL - VOL, NMH = VOH - VIH
B. Propagation Delay:
Measure tPHL and tPLH from transient curve.
C. Power Consumption:
CMOS Inverter Design and Simulation Report
I(VDD) * VDD gives instantaneous power. Integrate over time for average.
8. Results Summary
Parameter | Value (Example)
----------------------|----------------
VDD | 5V
VIL, VIH | ~1.5V, ~3.5V
NML, NMH | ~1.5V each
Propagation Delay | ~2-5 ns
Power Consumption | ~10 µW - 1 mW
9. Conclusion
The CMOS inverter demonstrates ideal switching behavior with high noise margins and low static power
consumption. Simulation validates correct functionality.
10. Future Work
- Analyze load capacitance effects
- Use advanced BSIM models
- Simulate using scaled technologies (e.g., 65nm, 180nm)