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Analog Integrated Circuits Design Insights

The document discusses the characteristics of pMOST and nMOST transistors, highlighting that pMOSTs do not exhibit positive threshold voltages, while nMOSTs can be either enhancement or depletion types. It explains the behavior of charges in a MOS transistor when various voltages are applied, focusing on the creation of an inversion channel and the resulting mobile charge. The relationship between mobile charge, sheet resistance, and the dimensions of the transistor is also outlined.

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5 views1 page

Analog Integrated Circuits Design Insights

The document discusses the characteristics of pMOST and nMOST transistors, highlighting that pMOSTs do not exhibit positive threshold voltages, while nMOSTs can be either enhancement or depletion types. It explains the behavior of charges in a MOS transistor when various voltages are applied, focusing on the creation of an inversion channel and the resulting mobile charge. The relationship between mobile charge, sheet resistance, and the dimensions of the transistor is also outlined.

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14 DESIGN OF ANALOG INTEGRATED CIRCUITS AND SYSTEMS

Similarly, a positive value of VT gives rise to a pMOST of the depletion type.


However, it is noted in Fig. 1-3 that positive values of Vt never occur for pMOSTs.
Contrarily, «MOSTs can be of both the enhancement and depletion type, depending
on their fabrication and substrate biasing. This is a result of the negative values of
the threshold voltages at low substrate doping levels, caused by the presence of the
parasitic JFET represented by parameter y.

1-3 MOST LINEAR REGION AND SATURATION REGION


In order to fully understand what happens to all the charges in the MOST when
voltages such as vgs, vds and vBs are applied, it is important to understand value
of the charge, electric field, and potential distributions in a MOS transistor structure.
These values can be obtained by first-order calculations,

1-3-1 Large v^s» Small v^s, and Zero Vg$


Under these conditions a large value of vgs is applied, which is higher than Vto-
The other voltage vBs is kept at zero and vds at nearly zero. An inversion channel
is created underneath the gate oxide. The channel consists of mobile electrons with
charge Qm.
This charge Qm is a result of the definition of the threshold voltage. It is given by

Qm = Cm(vGs ~ VT) (1-8)

The mobile charge Qm actually connects drain and source. It acts as a resistance
connecting drain and source and is given by the sheet resistance under the gate. This
sheet resistance is expressed in Ohms/Q. Its value is inversely proportional to this
charge, as given by

Rdso = (1-9«)

For the actual value of the resistance, its dimensions W and L (see Fig. 1-lc) must
be considered. This yields

L 1
Rds = Rds^w - ß(VGs _ Vt) (l-%)

’(l-9c)
with

and KP = tiCM (1-9J)

in which n is the mobility in the channel.

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