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DC and Transient Response in CMOS VLSI

The document discusses DC and transient responses in CMOS VLSI design, focusing on pass transistors, DC response, logic levels, and noise margins. It explains the operation of nMOS and pMOS transistors, their I-V characteristics, and the importance of load line analysis. Additionally, it covers transient response analysis, including definitions of delay and the use of simulation tools like SPICE for accurate modeling.

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saiedali2005
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0% found this document useful (0 votes)
29 views29 pages

DC and Transient Response in CMOS VLSI

The document discusses DC and transient responses in CMOS VLSI design, focusing on pass transistors, DC response, logic levels, and noise margins. It explains the operation of nMOS and pMOS transistors, their I-V characteristics, and the importance of load line analysis. Additionally, it covers transient response analysis, including definitions of delay and the use of simulation tools like SPICE for accurate modeling.

Uploaded by

saiedali2005
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Lecture 5:

DC &
Transient
Response
Outline
 Pass Transistors
 DC Response
 Logic Levels and Noise Margins
 Transient Response

5: DC and Transient Response CMOS VLSI Design 4th Ed. 2


Pass Transistors
 We have assumed source is grounded
 What if source > 0?
VDD
– e.g. pass transistor passing VDD
VDD
 Vg = VDD
– If Vs > VDD-Vt, Vgs < Vt
– Hence transistor would turn itself off
 nMOS pass transistors pull no higher than VDD-Vtn
– Called a degraded “1”
– Approach degraded value slowly (low Ids)
 pMOS pass transistors pull no lower than Vtp
 Transmission gates are needed to pass both 0 and 1
5: DC and Transient Response CMOS VLSI Design 4th Ed. 3
Pass Transistor Ckts

VDD VDD VDD


VDD VDD
VDD
Vs = VDD-Vtn VDD-Vtn
VDD-Vtn VDD-Vtn

VDD
VDD-Vtn
Vs = |Vtp|
VDD VDD-2Vtn
VSS

5: DC and Transient Response CMOS VLSI Design 4th Ed. 4


DC Response
 DC Response: Vout vs. Vin for a gate
 Ex: Inverter
– When Vin = 0 -> Vout = VDD
– When Vin = VDD -> Vout = 0
VDD
– In between, Vout depends on
transistor size and current Idsp
Vin Vout
– By KCL, must settle such that Idsn
Idsn = |Idsp|
– We could solve equations
– But graphical solution gives more insight

5: DC and Transient Response CMOS VLSI Design 4th Ed. 5


Transistor Operation
 Current depends on region of transistor behavior
 For what Vin and Vout are nMOS and pMOS in
– Cutoff?
– Linear?
– Saturation?

5: DC and Transient Response CMOS VLSI Design 4th Ed. 6


nMOS Operation
Cutoff Linear Saturated
Vgsn < Vtn Vgsn > Vtn Vgsn > Vtn
Vin < Vtn Vin > Vtn Vin > Vtn
Vdsn < Vgsn – Vtn Vdsn > Vgsn – Vtn
Vout < Vin – Vtn Vout > Vin - Vtn

VDD
Vgsn = Vin Idsp
Vin Vout
Vdsn = Vout Idsn

5: DC and Transient Response CMOS VLSI Design 4th Ed. 7


pMOS Operation
Cutoff Linear Saturated
Vgsp > Vtp Vgsp < Vtp Vgsp < Vtp
Vin > VDD + Vtp Vin < VDD + Vtp Vin < VDD + Vtp
Vdsp > Vgsp – Vtp Vdsp < Vgsp – Vtp
Vout > Vin - Vtp Vout < Vin - Vtp

VDD
Vgsp = Vin - VDD Vtp < 0 Idsp
Vin Vout
Vdsp = Vout - VDD Idsn

5: DC and Transient Response CMOS VLSI Design 4th Ed. 8


I-V Characteristics
 Make pMOS is wider than nMOS such that n = p
Vgsn5

Idsn Vgsn4

-Vdsp Vgsn3
-VDD Vgsn2
Vgsp1 Vgsn1
Vgsp2 0 VDD
Vgsp3 Vdsn

Vgsp4 -Idsp

Vgsp5

5: DC and Transient Response CMOS VLSI Design 4th Ed. 9


Current vs Vout, Vin

Vin0 Vin5

Vin1 Vin4
Idsn, |Idsp|

Vin2 Vin3
Vin3 Vin2
Vin4 Vin1
VDD
Vout

5: DC and Transient Response CMOS VLSI Design 4th Ed. 10


Load Line Analysis
 For a given Vin:
– Plot Idsn, Idsp vs. Vout
– Vout must be where |currents| are equal in
Vin0 Vin5

Vin1 Vin4
Idsn, |Idsp|
VDD
Vin2 Vin3
Idsp
Vin3 Vin2 Vin Vout
Vin4 Vin1 Idsn

VDD
Vout

5: DC and Transient Response CMOS VLSI Design 4th Ed. 11


Load Line Analysis
 Vin = 0V
0.4V
0.6V
0.8V
.2V
DD DD
DD

Vin0 Vin5
in5

Vin1 Vin4
dsn, |Idsp
Idsn dsp
|

Vin2 Vin3
Vin3 Vin2
Vin4 Vin1
in0
VDD
Vout
out
DD

5: DC and Transient Response CMOS VLSI Design 4th Ed. 12


DC Transfer Curve
 Transcribe points onto Vin vs. Vout plot responeventer
for
Vin0 Vin5 CDC VDD
Vin0

A
Vin1

B
Vin2

Vout
Vin1 Vin4
C

Vin2 Vin3
Vin3
Vin3 Vin2 D Vin4 Vin5
Vin4 Vin1 E
0 Vtn VDD/2 VDD+Vtp
VDD VDD
Vout Vin

w̅ 8 time III www.t


Voltage
5: DC and Transient Response CMOS VLSI Design 4th Ed. 13
Operating Regions
 Revisit transistor operating regions
A VDD

wt short It is circuit J lils Vin Vout


84510 END Vout
g ÉJ 2

Region nMOS pMOS


GND A Cutoff Linear
Cutoff linear VDD
B Saturation
saturation Linear
linear A B

C saturation
Saturation saturation
Saturation Vout
C
D Linear
linear Saturation
Saturation
E Linear
linear Cutoff
Cutoff
D
E
0 Vtn VDD/2 VDD+Vtp
VDD
Vin

5: DC and Transient Response CMOS VLSI Design 4th Ed. 14


Beta Ratio Lenght Chanel [Link]

channel 319
 With the following definitions:
width

as
not I
W
g
 Process dependent factors:

 Geometry dependent factors: W and L.

5: DC and Transient Response CMOS VLSI Design 4th Ed. 15


Beta Ratio
 Transistor beta calculation example:
– Typical values for an n-transistor in 1 micron technology:

– Compute beta:
Bn Bp
– How does this beta compare with p-devices:
j

Bn
Bp EST
 n-transistor gains are approximately 2.8 times larger than p-
transistors.
Tg w̅ IT IS
5: DC and Transient Response CMOS VLSI Design 4th Ed. 16
I 81 02
87 E 21 9 nmos s pmos

Beta Ratio
 If p / n  1, switching point will move from VDD/2
 Called skewed gate
 Other gates: collapse into equivalent inverter

T
VDD
DCWTw
si
p
 10
n
Vout 2 voltage [Link]
µ
1

p
n
 0.1 Dna
0.5

PMOS
as

Pmos ʰ
VDD
Vin
F I
5: DC and Transient Response CMOS VLSI Design 4th Ed. 17
401
j

Eat
right
s
pete 9
with
I
Noise Margins

not recognize the input?


low
Ishida
 How much noise can a gate input see before it does
of
high
Margins s Iip D
matt Output Characteristics
VDD
Input Characteristics

Logical High
Output Range VOH Logical High
Input Range
NMH
Voltage VIH
Indeterminate
max VIL Region
int
Logical Low VOL
NML
Logical Low
Input Range
Wh
Output Range
GND
[Link]

5: DC and Transient Response CMOS VLSI Design 4th Ed. 18


7
split
WEEK'M
we
no
get
NM lost VIII move
VIL Voll
NML PMH
11
8m
CMOS
h signal i
9,9
www
8
1
diagram
0
CMOS
Id
a
gemot
8 complement
petal
pie
transistors
pass
III

e
PMOS
A 0
50
NMOS
SV 4 41B
41
50 Vth
31 4
Ii 40 Vin 5 194
iwa n th gy noise
or
transmistion Gate
Logic Levels
 To maximize noise margins, select logic levels at
– unity gain point of DC transfer characteristic

Vout

Unity Gain Points


VDD
Slope = -1
VOH
i
roa
 p/ n > 1 2919
88
Vin Vout

Vor
V OL
0
Vin
Vtn VIL VIH VDD- VDD
|Vtp|

5: DC and Transient Response CMOS VLSI Design 4th Ed. 19


1 1
1 I 55s
[Link] 2
1
ad
89
Noise Margine
it
I miss
v59
Transient Response
 DC analysis tells us Vout if Vin is constant
 Transient analysis tells us Vout(t) if Vin(t) changes
– Requires solving differential equations
 Input is usually considered to be a step or ramp
– From 0 to VDD or vice versa

5: DC and Transient Response CMOS VLSI Design 4th Ed. 20


Inverter Step Response
 Ex: find step response of inverter driving load cap
Vin (t )  u(t  t0 )VDD
Vin(t)
Vout (t  t0 )  VDD Vout(t)
Cload
dVout (t ) I dsn (t )
 Idsn(t)
dt Cload
Vin(t)

 0 t  t0

 
 2
I dsn (t )   2
VDD  V t Vout  VDD  Vt Vout(t)
 t
   VDD  Vt  Vout (t )  V (t ) V  V  V
 out t0
  2 
out DD t

5: DC and Transient Response CMOS VLSI Design 4th Ed. 21


Delay Definitions
 tpdr: rising propagation delay
– From input to rising output
crossing VDD/2
 tpdf: falling propagation delay
– From input to falling output
crossing VDD/2
 tpd: average propagation delay
– tpd = (tpdr + tpdf)/2
 tr: rise time
– From output crossing 0.2
VDD to 0.8 VDD
 tf: fall time
– From output crossing 0.8
VDD to 0.2 VDD

5: DC and Transient Response CMOS VLSI Design 4th Ed. 22


Simulated Inverter Delay
 Solving differential equations by hand is too hard
 SPICE simulator solves the equations numerically
– Uses more accurate I-V models too!
 But simulations take time to write, may hide insight
2.0

1.5

1.0
(V)
tpdf = 66ps tpdr = 83ps
Vin
Vout
0.5

0.0

0.0 200p 400p 600p 800p 1n


t(s)

5: DC and Transient Response CMOS VLSI Design 4th Ed. 23

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