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2SC4468 Transistor Specifications

The document provides the product specification for the Silicon NPN Power Transistor 2SC4468, detailing its description, applications, pin configuration, absolute maximum ratings, and key characteristics. It includes electrical parameters such as collector-emitter voltage, collector current, and DC current gain, along with switching times and classifications. The transistor is suitable for audio and general-purpose applications and comes in a TO-3PN package.

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Sreejesh Sree
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12 views4 pages

2SC4468 Transistor Specifications

The document provides the product specification for the Silicon NPN Power Transistor 2SC4468, detailing its description, applications, pin configuration, absolute maximum ratings, and key characteristics. It includes electrical parameters such as collector-emitter voltage, collector current, and DC current gain, along with switching times and classifications. The transistor is suitable for audio and general-purpose applications and comes in a TO-3PN package.

Uploaded by

Sreejesh Sree
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4468

DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1695

APPLICATIONS
·Audio and general purpose

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 200 V

VCEO Collector-emitter voltage Open base 140 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 10 A

IB Base current 4 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4468

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 140 V

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 0.5 V

ICBO Collector cut-off current VCB=200V; IE=0 10 µA

IEBO Emitter cut-off current VEB=6V; IC=0 10 µA

hFE DC current gain IC=3A ; VCE=4V 50 180

COB Output capacitance IE=0 ; VCB=10V,f=1MHz 250 pF

fT Transition frequency IC=0.5A ; VCE=12V 20 MHz

Switching times

ton Turn-on time 0.24 µs

IC=5A;RL=12B
ts Storage time IB1=- IB2=0.5A 4.32 µs
VCC=60V

tf Fall time 0.40 µs

hFE Classifications

O P Y

50-100 70-140 90-180

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4468

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

3
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4468

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