SVF7N60F/S/D_Datasheet

7A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION
2
SVF7N60F/S/D is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary 1
TM 1 3
F-Cell high-voltage planar VDMOS technology. The improved
process and cell structure have been especially tailored to minimize 3 TO-252-2L
on-state resistance, provide superior switching performance, and [Link] [Link] [Link]
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
1 1
23 3
FEATURES TO-263-2L
TO-220F-3L
 7A, 600V, RDS(on)（typ）=0.96@VGS=10V
 Low gate charge
 Low Crss
 Fast switching
 Improved dv/dt capability

ORDERING INFORMATION
Hazardous
Part No. Package Marking Packing
Substance Control
SVF7N60F TO-220F-3L SVF7N60F Pb free Tube
SVF7N60S TO-263-2L SVF7N60S Halogen free Tube
SVF7N60STR TO-263-2L SVF7N60S Halogen free Tape & Reel
SVF7N60DTR TO-252-2L SVF7N60D Halogen free Tape & Reel

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 SVF7N60F/S/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)

Ratings Unit
Characteristics Symbol
SVF7N60F SVF7N60S SVF7N60D
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
TC=25C 7.0
Drain Current ID A
TC=100C 4.0
Drain Current Pulsed IDM 28 A
Power Dissipation(TC=25C) 45 122 90 W
PD
-Derate above 25C 0.36 0.98 0.72 W/C
Single Pulsed Avalanche Energy(Note 1) EAS 490 mJ
Operation Junction Temperature Range TJ -55～+150 C
Storage Temperature Range Tstg -55～+150 C

THERMAL CHARACTERISTICS
Ratings
Characteristics Symbol Unit
SVF7N60F SVF7N60S SVF7N60D
Thermal Resistance, Junction-to-Case RθJC 2.78 1.02 1.39 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.5 62.0 C/W

ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)

Characteristics Symbol Test conditions Min. Typ. Max. Unit
Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 600 -- -- V
Drain-Source Leakage Current IDSS VDS=600V, VGS=0V -- -- 1.0 µA
Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA
Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V
Static Drain- Source
RDS(on) VGS=10V, ID=3.5A -- 0.96 1.2 
On State Resistance
Input Capacitance Ciss 592 770 1001
VDS=25V, VGS=0V,
Output Capacitance Coss -- 96 -- pF
f=1.0MHZ
Reverse Transfer Capacitance Crss -- 8.7 --
Turn-on Delay Time td(on) VDD=300V, ID=7.0A, -- 15.5 --
Turn-on Rise Time tr RG=25 -- 32.7 --
ns
Turn-off Delay Time td(off) -- 52.2 --
Turn-off Fall Time tf (Note 2,3) -- 31.5 --
Total Gate Charge Qg VDS=480V, ID=7.0A, -- 21.1 --
Gate-Source Charge Qgs VGS=10V -- 4.53 -- nC
Gate-Drain Charge Qgd (Note 2,3) -- 10.0 --

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 SVF7N60F/S/D_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics Symbol Test conditions Min. Typ. Max. Unit
Continuous Source Current IS Integral Reverse P-N Junction -- -- 7.0
A
Pulsed Source Current ISM Diode in the MOSFET -- -- 28
Diode Forward Voltage VSD IS=7.0A,VGS=0V -- -- 1.4 V
Reverse Recovery Time Trr IS=7.0A,VGS=0V, -- 482 -- ns
Reverse Recovery Charge Qrr dIF/dt=100A/µS -- 2.9 -- µC
Notes:
1. L=30mH, IAS=5.16A, VDD=100V, RG=25, starting TBJB=25C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.

TYPICAL CHARACTERISTICS

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 SVF7N60F/S/D_Datasheet
TYPICAL CHARACTERISTICS(continued)

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

1600 12
Ciss=Cgs+Cgd(Cds=shorted)
VDS=520V

Gate-Source Voltage – VGS(V)

1400 Coss=Cds+Cgd
Crss=Cgd 10 VDS=325V
VDS=130V
1200
Capacitance (pF)

8
1000
Ciss
800 6
Coss
Crss
600
Notes:
4
400 1. VGS=0V
2. f=1MHz
2
200
Note: ID=7.0A

0 0
0.1 1 10 100 0 5 10 15 20 25

Drain-Source Voltage – VDS(V) Total Gate Charge – Qg(nC)

Figure 7. Breakdown Voltage Variation

Figure 8. On-resistance vs. Temperature
vs. Temperature
1.2 3.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance

2.5
(Normalized)– RDS(ON)
(Normalized)– BVDSS

1.1
2.0

1.0 1.5

1.0
0.9
Notes: Notes:
1. VGS=0V 0.5 1. VGS=10V
2. ID=250µA 2. ID=3.5A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Junction Temperature – TJ(°C) Junction Temperature – TJ(°C)

Figure 9-1. Max. Safe Operating Figure 9-2. Max. Safe Operating
Area(SVF7N60F) Area(SVF7N60S)
102 102
Operation in this area Operation in this area
is limited to RDS(ON) is limited to RDS(ON)

100µs 100µs
101 101
Drain Current - ID(A)

Drain Current - ID(A)

1ms 1ms

10ms 10ms

DC
100 DC 100

10-1 Notes: 10-1 Notes:

[Link]=25°C [Link]=25°C
[Link]=150°C [Link]=150°C
[Link](ON)[max]=1.2Ω [Link](ON)[max]=1.2Ω
10-2 10-2
100 10 1
10 2
10 3
100 101 102 103

Drain-Source Voltage - VDS(V) Drain-Source Voltage - VDS(V)

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 SVF7N60F/S/D_Datasheet
TYPICAL CHARACTERISTICS(continued)

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 SVF7N60F/S/D_Datasheet
TYPICAL TEST CIRCUIT

Gate Charge Test Circuit & Waveform

Same Type VGS

Qg
as DUT 10V
50KΩ
VDS
12V 200nF
300nF

Qgs Qgd

VGS

DUT
3mA
Charge

Resistive Switching Test Circuit & Waveform

RL VDS
VDS
90%
VGS
VDD
RG
DUT
10%
VGS
10V
td(on) tr
ton td(off) tf
toff

Unclamped Inductive Switching Test Circuit & Waveform

1 2 BVDSS
EAS =
L 2 LIAS BVDSS - VDD
VDS
BVDSS
ID
IAS

RG
DUT VDD ID(t)
10V
VDD VDS(t)
tp
tp Time

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 SVF7N60F/S/D_Datasheet
PACKAGE OUTLINE

TO-220F-3L UNIT: mm

TO-263-2L UNIT: mm

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:3.2

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 SVF7N60F/S/D_Datasheet
PACKAGE OUTLINE(continued)

TO-252-2L UNIT: mm

SYMBOL MIN NOM MAX

A 2.10 2.30 2.50
A1 0 --- 0.127
b 0.66 0.76 0.89
b3 5.10 5.33 5.46
c 0.45 --- 0.65
c2 0.45 --- 0.65
D 5.80 6.10 6.40
E 6.30 6.60 6.90
e 2.30TYP
Eject pin（note1）
H 9.60 10.10 10.60
L 1.40 1.50 1.70
L1 2.90REF
L4 0.60 0.80 1.00

There are two conditions for this position:has an eject pin or has no eject pin.

Disclaimer :
 Silan reserves the right to make changes to the information herein for the improvement of the design and performance without
prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such
information is complete and current.
 All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in
system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards
strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause
loss of body injury or damage to property.
 Silan will supply the best possible product for customers!

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 SVF7N60F/S/D_Datasheet
Part No.: SVF7N60F/S/D Document Type: Datasheet
Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //[Link]

Rev.: 3.2
Revision History:
1. Delete the package outline of TO-262-3L、TO-251J-3L and TO-220-3L
Rev.: 3.1
Revision History:
1. Update the package outline of TO-262-3L(1.1version)
2. Add another solid figure of TO-220-3L
Rev.: 3.0
Revision History:
1. Update the package outline of TO-262-3L
Rev.: 2.9
Revision History:
1. Modify the package outline of TO-251J-3L
Rev.: 2.8
Revision History:
1. Modify the Electrical characteristics
Rev.: 2.7
Revision History:
1. Modify the General Description
Rev.: 2.6
Revision History:
1. Modify the Ordering information
Rev.: 2.5
Revision History:
1. Modify the Ordering information
2. Modify the package outline of TO-263-2L and TO-262-3L
Rev.: 2.4
Revision History:
1. Modify the package information of TO-220-3L
2. Modify the ordering information
Rev.: 2.3
Revision History:
1. Modify the package information of TO-220F-3L
2. Modify the package information of TO-252-2L
Rev.: 2.2
Revision History:
1. Modify the thermal characteristics
Rev.: 2.1

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:3.2

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 Document Type:_Datasheet
Revision History:
1. Modify the package outline of TO-251J-3L
Rev.: 2.0
Revision History:
1. Modify the ordering information
Rev.: 1.9
Revision History:
1. Change the schematic diagram of MOS
Rev.: 1.8
Revision History:
1. Add the package of TO-252-2L
Rev.: 1.7
Revision History:
1. Modify “PACKAGE OUTLINE”
Rev.: 1.6
Revision History:
1. Modify “SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS”
Rev.: 1.5
Revision History:
1. Modify the typ. Value of RDS(on)
Rev.: 1.4
Revision History:
1. Add the package of TO-262-3L
Rev.: 1.3
Revision History:
1. Update the package of TO-220-3L
Rev.: 1.2
Revision History:
1. Update the package of TO-220F-3L
2. Add the package of TO-251J-3L
Rev.: 1.1
Revision History:
1. Add the package of TO-263-2L
Rev.: 1.0
Revision History:
1. Original

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:2.0

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