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Understanding PN Junction Diodes

The document explains the functioning of a PN junction diode, detailing its formation from p-type and n-type semiconductors and the effects of different biasing conditions: zero bias, reverse bias, and forward bias. It describes how these conditions influence the depletion layer width and provides an overview of the diode's I-V characteristics. Additionally, it touches on the operation of bipolar junction transistors (BJTs) and basic logic gate implementations using diodes.

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sushila chaudhary
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6 views16 pages

Understanding PN Junction Diodes

The document explains the functioning of a PN junction diode, detailing its formation from p-type and n-type semiconductors and the effects of different biasing conditions: zero bias, reverse bias, and forward bias. It describes how these conditions influence the depletion layer width and provides an overview of the diode's I-V characteristics. Additionally, it touches on the operation of bipolar junction transistors (BJTs) and basic logic gate implementations using diodes.

Uploaded by

sushila chaudhary
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

PN-jun ction

Nregion P-region
Ip= Imx

+t +
++ +

very smal
depletion layer

Forward Biasing Votage

PN Junction Diode
PN-junction diode is formed when a p-type
A
semiconductor is fused to an n-type
semiconductor creating a potential barrier
voltage across the diode junction
There are two operating regions and three
possible "biasing" conditions for the standard
Junction Diode and these are:

1. Zero Bias - No external voltage


potential is applied to the PN junction
diode.

2. Reverse Bias -The voltage


potentialis connected negative, (-ve) to
the P-type material and positive, (+ve)
to the N-type material across the diode
which has the effect of Increasing the
PN junction diode's width.
3. Forward Bias -The voltage
potential is connected positive, (+ve) to
the P-type materialand negative, (-ve)
to the N-type material across the diode
which has the effect of Decreasing the
PN junction diodes width.
Zero Biased PNJunction Diode

PN Junction

Nregion P-region R
+ +

Zero Bias

I 4V

Built-in
Potential
0.3-0.7
Increase in the Depletion Layer due to
Reverse Bias

PNjun ction
Nregion P-region
R
+ + I=0
+

lwider depletion!
layer

-
Reverse Biasing Voltage
Reductionin the Depletion Layer due
to Forward Bias

PN-jun ction
Nregion P-region R
It+ + Ip= Imæx

++ +

very small
depletion layer

Forward Biasing Voltage


Junction Diode Symboland Static I-V
Characteristics

HNP
Cathode (K) Anode (A)
+I (mA) Foward
+ Current

Conventional Current Flow Forward


Bias
Reverse "knee
Breakdown
Voitage
+V
Reverse Voltage Foward Voltage
Leakage Current
Zener <20uA Silicon I0.3v Germanium
Breakdown <50uA Germanium I0.7v Silicon
or Avalanche
Region Reverse
Bias
Reverse
-I(mA) Current
BJT Biola Junchion Irauyishr)
Thru terinl tuo Junaioy deuis
diode Bace to Bak lomned foyr
Np

PNp

Arroo- direchn f urrut


funehn
C> toleter Naderatlg doþud ’ (ollet u leshwWide
B Bas

haauily daed
piffuut ryfom of opuaHo
NPN
Achu Ve>V>VE Act as

Cutopf (Ve> VgvVu) Aet a


(2ee 0)
PNP

Ahe Veg>Ve

Ve>a) lve)
dahu rahon - (Ve<Vg) V>Va)

Common eiltU

NN

owuon Bas

ccharaetwhtu)
Re
VBE Vg - Ve
VeE Ve -VE
Vce
P
VEB VE -V
V. -VBE
+Vec
Biased)
CE Juuioy RB (Reve Biad)

Colletor

Cveysmal)

Cu
B2 t 2c

9emilte

p urrutrolp urut
Hu
toutllig
urrut coulled

VcElv

atp charetuhy

VeE Ven t VBE

VsEiv)
characushey
AHu

Achgion
anfjurat
daturaHo yien -

(fy

Appleahism ay a suit in dijitl eleuy


ar Ouaplifie in aualeg oluba
Blean Agoira
25-| ogic at (iAND, Of, NpNP NoR,EX-of

digitay duwiu etA a of) Te or mulkpt

Not4a Ort etar )


loyic A

Dp

Palean euprusjenY A

Trutte falle

Booleau eubryjg y A·B


Trta table
Bosleau eubryojo y AtB

Trat tonlle
A

Of AND ud N0‘ ar Baic

(4)NAND
tuubinahon o AND

frtu tob) A
NOR
A

Bosloas eubressio
Y AtB

Truta talle
A

(o)
) d4T dieinilan
fe
ET T diuilar 24p

Baoleayerso

Trute talle
( laue p ojp 0
dissluilar Dp O)

Boleon Oupriy- y A)8

Trute tabl

code of @deuwa mumbee


Bina
Bose

deewamuubu o, (,2,5,,r, 6,7,8, 9


leuiute
(lsB)

2 36

Qveu 3G 2

4 7
2
2
+2 (MIB
299,, =( oolo0 ),
2

|2

dhort t

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