SoLID STATE AND SEmicoNDUcTOR PYSIcs

Soliols
tt| Band Thoy

enMgy expoenced by e due ith

Ihe pattntial
ctom =- Ze .e

FOR
NO, 0F ATOMs
ith atom
it6 to

Ergy
leave: Ep

Er ’Enenyy to
Bend Er24 E, get to tte
2
leave

Fot egion I: 0<n<a

H Vob
|vzo Fou
V= Va

Schydingn's Eauatin Baie, Stren gth

+ 2m (e-v)9
h2

Fo J
d
d a'
 da'

dn?
2m (E-V)=0. 14 p'

BAoch Fuion hos perodie tuncitn.

A_t solving Oand

mVÍb x a sloaa + cesaa = coka
a

mveba = CeoKo

a
psinaa

-2K 42
2
 in G1 and Gt G2
adeing the Wave hunctiens

Forbidden Region (no probabie'hy o tindingy

pantice/e)

Psinda + cg a = cey Ka
da

+ Cogna Coska Snaa = 0

P

2me =
a
n'h
2ma' 8 mat

Cas2 P ’ o
Cosra

2m 2m
2me
 # Fhmi- DiLao distuibtton funoion

AbAotute temperatue
14 exp lE-G,l/KT ortut
Bctzm ann

Fermi Enegy

fle)!
tle) =t
I+e
tetindetemied n

KT ab Ove
. Evaluate
entgt
fle) =

ATO, T 0.269
|+2.7 3.1
 Senloon duct InswatoAu
CencuctO

Senconductors
Intin sic Pune
Sumicenducton
Extinu'e Impue
Sn type
Cenpund sumcenducto Ca As ALP

Fomi livee in intuinc Aeniconducto

Feri Diuac Diatutbuten homulo
j(E) =

bund

Pmo kablity to hole in valnu bavd

4E,)=
 f(E)= I- J(Ev)
|+eE-Ep)/KT I+Ev-E)/KT
e(Ev-Er)/KT
|+ee Er)/kT |+ErYKT
(Ey- Er)/kT

I+elEe-F)/KT I+eEv-E)/KT

Ee -E)7KT (Ee-EKT
*1

nd E,-E) >7kT

Ee-E)/kT

-(Ec- Ep)/KT -(Ee -Ey) kT

tokingAn
 Mation
ConntHation of chamge
Tempnatue clepndancs of intrinic eionducto.
canieu es and holes) in
DOs(Denaity of Statu)
Accosding to Fe Diy ae cuitioution hunchon af
The phop pa6abihy ko enogy tateE, to be
Can Cai
Rceup fed by chag
f(E) =

Accoxding to Ouantum Meehanies,Tu

tates E in voln

4nv (2me)

2s+I = L%1 +|= 2

The dunty of enngy atates (re the no.

tates n unit voume n wnit enengy nang
D(E) = dg(e)
V de
g, x 2 (2m)v2
De) =

DE) 4n (2m)3 pl/

Fo cnduetion band
 tre DOS E D(E), then nnbe
envgy atates avar alle n H
E to (E +d) in wnit vone will be pfo () dE. "
f(e) wil glre probabiity fon enngy tute E
to be aceuaied by So ttre no.
Atates £ to (E tdE)
ate given by -
N(E) dE = D(E)dE {E)
Thus, the no. o e ç wit volumo o a ubstone
(e denuty of e) can be obtairud by intenating tae
aboe expeksion m eomptey Hld lowut
to higet eneryy level.
N(E)dE = blE)FElde

3/2
4K(2m) (E-E.J dE
h3
1+ ele-Ee)/KT
Ec
TE- Er)/KT tE-EFJKT
E-E)/KT
4nl2m)E- y,-(e- EF)/kT d£

4n(2m )sh dE
 (Ee -Ec)/KT (E-EVKT
dE
(E-E) e
h

3)2 E-F)/KT
= 4n (2m )) (E,- ) de
h

het E- =
KT

dE = KTd

4x(2m)/2 (Eg- )7KT

KT)KTe do

4n(2mKT)/2 (Ee-Ee)/KT
3

47 (2mKr)32 (Ee-E)IKT
-

2 (27m KT) 32 AE,/2KT

3/2 JEa /2KT
2(27mK)
h
AE/2KT
ATI whe
2(2rmk) V2 4. 28 X10m
 in
ne, Mh n,> no. of charge camie
Valen ce , condcion and ntinc semiconductor
bard band

1 foinmi Enmgy in Intinsic lenicondcto

The n0. in itinite seniondeto

D(E)fE)dE DE)HLE)dt + DE) f(e) aE

DE)(E) dE

At T 0 kelvin

4(E)=1

4*(2m)32

4(2m)s/z

4n(2m )3/2 X
3/2 3h3

2/3 213
2/3
f = 3n, = h' 3
8 2m 2m

E3.6x1o"n/s