PPJA3432

30V N-Channel Enhancement Mode MOSFET – ESD Protected

SOT-23 Unit: inch(mm)
Voltage 30 V Current 1.6A

Features
 RDS(ON) , VGS@4,5V, ID@1.6A<200mΩ

 RDS(ON) , VGS@2.5V, ID@1.1A<270mΩ

 RDS(ON) , VGS@1.8V, ID@0.2A<570mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected 2KV HBM

 Lead free in compliance with EU RoHS 2011/65/EU directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data
 Case: SOT-23 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0003 ounces, 0.0084 grams

 Marking: A32

o
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS

Drain-Source Voltage VDS 30 V

Gate-Source Voltage VGS +8 V
Continuous Drain Current ID 1.6 A
(Note 4)
Pulsed Drain Current IDM 6.4 A
o
Ta=25 C 1.25 W
Power Dissipation o
PD
Derate above 25 C 10 mW/ oC
o
Operating Junction and Storage Temperature Range TJ,TSTG -55~150 C
Typical Thermal resistance
- Junction to Ambient (Note 3) RθJA 100 o
C/W

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Electrical Characteristics (TA=25 C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS

Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 30 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 0.5 0.78 1.3 V
VGS=4.5V, ID=1.6A - 145 200
Drain-Source On-State Resistance RDS(on) VGS=2.5V, ID=1.1A - 185 270 mΩ
VGS=1.8V, ID=0.2A - 330 570
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V - 0.01 1 uA
Gate-Source Leakage Current IGSS VGS=+8V, VDS=0V - 1.4 +10 uA
(Note 5)
Dynamic
Total Gate Charge Qg - 1.5 -
VDS=15V, ID=1.6A,
Gate-Source Charge Qgs - 0.3 - nC
VGS=4.5V (Note 1,2)
Gate-Drain Charge Qgd - 0.3 -
Input Capacitance Ciss - 93 -
VDS=15V, VGS=0V,
Output Capacitance Coss - 19 - pF
f=1.0MHZ
Reverse Transfer Capacitance Crss - 6 -
Turn-On Delay Time td(on) - 6.4 -
VDD=15V, ID=1.6A,
Turn-On Rise Time tr - 33 -
VGS=4.5V, ns
Turn-Off Delay Time td(off) (Note 1,2) - 37 -
RG=6Ω
Turn-Off Fall Time tf - 32 -
Drain-Source Diode
Maximum Continuous Drain-Source
IS --- - - 1.0 A
Diode Forward Current

Diode Forward Voltage VSD IS=1.0A, VGS=0V - 0.81 1.2 V

NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.

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TYPICAL CHARACTERISTIC CURVES

Fig.1 On-Region Characteristics Fig.2 Transfer Characteristics

Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction temperature

Fig.5 On-Resistance Variation with VGS. Fig.6 Body Diode Characteristics

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 PPJA3432
TYPICAL CHARACTERISTIC CURVES

Fig.7 Gate-Charge Characteristics Fig.8 Threshold Voltage Variation with Temperature.

Fig.9 Capacitance vs. Drain-Source Voltage.

January 22,2015-REV.02 Page 4

 PPJA3432
PART NO PACKING CODE VERSION

PART NO PACKING CODE Package Type Packing type Marking Version

PJA3432_R1_00001 SOT-23 3K pcs / 7” reel A32 Halogen free

PJA3432_R2_00001 SOT-23 12K pcs / 13” reel A32 Halogen free

MOUNTING PAD LAYOUT

(0.90) MIN.
0.035 MIN.

0.031 MIN.
(0.80) MIN.
(1.10)

(2.00)
0.043

0.078

0.037
(0.95)

0.043
(1.10)

0.106
(2.70)

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January 22,2015-REV.02 Page 6