D S S
227
G G D
T-
SO APL501J 500V 43.0A 0.12W
S
ISOTOP® "UL Recognized" File No. E145592 (S)
POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APL501J UNIT
VDSS Drain-Source Voltage 500 Volts
ID Continuous Drain Current @ TC = 25°C 43
1
Amps
IDM, lLM Pulsed Drain Current and Inductive Current Clamped 172
VGS Gate-Source Voltage ±30 Volts
Total Power Dissipation @ TC = 25°C 520 Watts
PD
Linear Derating Factor 4.16 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 Volts
ID(ON) On State Drain Current 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 8V) 43 Amps
2
RDS(ON) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) 0.12 Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 4 Volts
THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case 0.28
°C/W
RθJA Junction to Ambient 40
VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500 Volts
2-2002
Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 13 lb•in
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Rev D
APT Website - [Link]
050-5903
USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS APL501J
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Ciss Input Capacitance VGS = 0V 6040 7300
Coss Output Capacitance VDS = 25V 1220 1710 pF
Crss Reverse Transfer Capacitance f = 1 MHz 510 770
td(on) Turn-on Delay Time VGS = 15V 13 26
tr Rise Time VDD = 0.5 VDSS 20 40 ns
td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 54 81
tf Fall Time RG = 0.6Ω 11 20
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic Test Conditions / Part Number MIN TYP MAX UNIT
SOA1 Safe Operating Area VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C 325 Watts
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.3
D=0.5
Z JC, THERMAL IMPEDANCE (°C/W)
0.1
0.2
0.05
0.1
0.05
Note:
0.01
PDM
0.02 t1
0.005
0.01 t2
Duty Factor D = t1/t2
θ
SINGLE PULSE Peak TJ = PDM x ZθJC + TC
0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
80 80
VGS=9V, 10V, 12V, 14 & 16V VGS=10, 12, 14 & 16V 9V
8V
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
8V
60 60
7V 7V
40 40
6V 6V
2-2002
20 20
5V 5V
Rev D
0 0
0 20 40 60 80 100 0 4 8 12 16
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
050-5903
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
APL501J
40 1.30
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
TJ = -55°C NORMALIZED TO
V = 10V @ 0.5 I [Cont.]
GS D
TJ = +25°C
ID, DRAIN CURRENT (AMPERES) 1.20
30 TJ = +125°C
VGS=10V
1.10
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
20
@ <0.5 % DUTY CYCLE
1.00
TJ = +125°C
10
TJ = +25°C TJ = -55°C 0.90
VGS=20V
0 0.80
0 2 4 6 8 0 20 40 60 80
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
50 1.15
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
ID, DRAIN CURRENT (AMPERES)
1.10
40
VOLTAGE (NORMALIZED)
1.05
30
1.00
20
0.95
10
0.90
0 0.85
50 75 25
100 125 150 -50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5 1.2
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
I = 0.5 I [Cont.]
D D
V = 10V
GS
VGS(TH), THRESHOLD VOLTAGE
1.1
2.0
1.0
(NORMALIZED)
(NORMALIZED)
1.5
0.9
1.0
0.8
0.5
0.7
0.0 0.6
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
175 30,000
OPERATION HERE
100 LIMITED BY RDS (ON)
100µS
50
ID, DRAIN CURRENT (AMPERES)
10,000
C, CAPACITANCE (pF)
1mS 5,000 Ciss
10
5 10mS
1,000 Coss
100mS
1
2-2002
500
DC Crss
.5
TC =+25°C
TJ =+150°C
Rev D
SINGLE PULSE
.1 100
1 5 10 50 100 500 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
050-5903
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
APL501J
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M4
H=4.8 (.187) (4 places)
H=4.9 (.193)
(4 places)
25.2 (0.992)
r = 4.0 (.157)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)
3.3 (.129) 1.95 (.077)
3.6 (.143) 2.14 (.084)
14.9 (.587) * Source Drain
15.1 (.594)
30.1 (1.185) * Source terminals are shorted
30.3 (1.193) internally. Current handling
38.0 (1.496) capability is equal for either
2-2002
38.2 (1.504) Source terminal.
* Source Gate
Rev D
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson. "UL Recognized" File No. E145592
050-5903
APT's devices are covered by one or more of the following [Link]: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058