FCP190N60E / FCPF190N60E N-Channel MOSFET

March 2013

FCP190N60E / FCPF190N60E
N-Channel SuperFET® II MOSFET
600 V, 20.6 A, 190 mΩ
Features Description
® ®
• 650 V @TJ = 150°C SuperFET II MOSFET is Fairchild Semiconductor ’s first gen-
eration of high voltage super-junction (SJ) MOSFET family that is
• Max. RDS(on) = 190 mΩ
utilizing charge balance technology for outstanding low on-resis-
• Ultra Low Gate Charge (Typ. Qg = 63 nC) tance and lower gate charge [Link] advanced tech-
nology is tailored to minimize conduction loss, provide superior
• Low Effective Output Capacitance (Typ. [Link] = 178 pF)
switching performance, and withstand extreme dv/dt rate and
• 100% Avalanche Tested higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system minia-
Applications turization and higher efficiency.

• LCD / LED / PDP TV Lighting

• Solar Inverter
• AC-DC Power Supply

G
TO-220 TO-220F
G D S GD S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol Parameter FCP190N60E FCPF190N60E Unit
VDSS Drain to Source Voltage 600 V
- DC ±20 V
VGSS Gate to Source Voltage
- AC (f > 1 Hz) ±30 V
-Continuous (TC = 25oC) 20.6 20.6*
ID Drain Current A
-Continuous (TC = 100oC) 13.1 13.1*
IDM Drain Current - Pulsed (Note 1) 61.8 61.8* A
EAS Single Pulsed Avalanche Energy (Note 2) 400 mJ
IAR Avalanche Current (Note 1) 4.0 A
EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ
Peak Diode Recovery dv/dt (Note 3) 20
dv/dt V/ns
MOSFET dv/dt 100
(TC = 25oC) 208 39 W
PD Power Dissipation
- Derate above 25oC 1.67 0.31 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering Purpose, o
TL 300 C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol Parameter FCP190N60E FCPF190N60E Unit
RθJC Thermal Resistance, Junction to Case 0.6 3.2
RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 oC/W

RθJA Thermal Resistance, Junction to Ambient 62.5 62.5

©2012 Fairchild Semiconductor Corporation 1 [Link]

FCP190N60E / FCPF190N60E Rev. C8
 FCP190N60E / FCPF190N60E N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCP190N60E FCP190N60E TO-220 - - 50
FCPF190N60E FCPF190N60E TO-220F - - 50

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - V
BVDSS Drain to Source Breakdown Voltage
VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - V
ΔBVDSS Breakdown Voltage Temperature
ID = 10 mA, Referenced to 25oC - 0.67 - V/oC
ΔTJ Coefficient
BVDS Drain-Source Avalanche Breakdown
VGS = 0 V, ID = 20 A - 700 - V
Voltage
VDS = 480 V, VGS = 0 V - - 1
IDSS Zero Gate Voltage Drain Current μA
VDS = 480 V, TC = 125oC - - 10
IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 μA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.5 - 3.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A - 0.16 0.19 Ω
gFS Forward Transconductance VDS = 20 V, ID = 10 A - 20 - S

Dynamic Characteristics
Ciss Input Capacitance - 2385 3175 pF
VDS = 25 V, VGS = 0 V
Coss Output Capacitance - 1795 2396 pF
f = 1 MHz
Crss Reverse Transfer Capacitance - 110 165 pF
Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1.0 MHz - 42 - pF
Coss eff. Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 178 - pF
Qg(tot) Total Gate Charge at 10V - 63 82 nC
Qgs Gate to Source Gate Charge VDS = 380 V, ID = 10 A - 10 - nC
VGS = 10 V
Qgd Gate to Drain “Miller” Charge (Note 4) - 24 - nC
ESR Equivalent Series Resistance f= 1 MHz - 5 - Ω

Switching Characteristics
td(on) Turn-On Delay Time - 23 56 ns
tr Turn-On Rise Time VDD = 380 V, ID = 10 A - 14 38 ns
td(off) Turn-Off Delay Time VGS = 10 V, RG = 4.7 Ω - 101 212 ns
tf Turn-Off Fall Time (Note 4) - 15 40 ns

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 20.2 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60.6 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A - - 1.2 V
trr Reverse Recovery Time VGS = 0 V, ISD = 10 A - 308 - ns
Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 4.8 - μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 4 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics

©2012 Fairchild Semiconductor Corporation [Link]

2
FCP190N60E / FCPF190N60E Rev. C8
 FCP190N60E / FCPF190N60E N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

50 100
VGS = 15.0V *Notes:
10.0V 1. VDS = 20V
8.0V 2. 250μs Pulse Test
7.0V

ID, Drain Current[A]

6.0V
ID, Drain Current[A]

10 o
5.5V 150 C
5.0V
4.5V
10 o
25 C

o
-55 C
1
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
0.3 1
0.1 1 10 2 3 4 5 6 7 8
VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.4 100
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

0.3 o
150 C
RDS(ON) [Ω],

o
25 C
10
VGS = 10V

0.2
VGS = 20V
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C 2. 250μs Pulse Test
0.1 1
0 10 20 30 40 50 60 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000 10
Ciss
VGS, Gate-Source Voltage [V]

VDS = 120V
8 VDS = 300V
1000
VDS = 480V
Capacitances [pF]

6
100 Coss

*Note: 4
10 1. VGS = 0V
Crss
2. f = 1MHz
2
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
1 Crss = Cgd *Note: ID = 10A
0.5 0
0.1 1 10 100 600 0 14 28 42 56 70
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

©2012 Fairchild Semiconductor Corporation [Link]

3
FCP190N60E / FCPF190N60E Rev. C8
 FCP190N60E / FCPF190N60E N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.2 3.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.5

RDS(on), [Normalized]
1.1
BVDSS, [Normalized]

2.0

1.0 1.5

1.0
0.9
*Notes: 0.5 *Notes:
1. VGS = 0V 1. VGS = 10V
2. ID = 10mA 2. ID = 10A
0.8 0.0
-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area
vs. Case Temperature - FCP190N60E vs. Case Temperature - FCPF190N60E
100 100

10μs

100μs 10μs
ID, Drain Current [A]

ID, Drain Current [A]

10 10
1ms 100μs

10ms 1ms
1 1 10ms
DC
Operation in This Area Operation in This Area
is Limited by R DS(on) is Limited by R DS(on) DC

0.1 *Notes: *Notes:

o
0.1
1. TC = 25 C o
1. TC = 25 C
o o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse
0.01 0.01
0.1 1 10 100 1000 0.1 1 10 100 1000
VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 11. Maximum Drain Current Figure 12. Eoss vs. Drain to Source Voltage
Switching Capability
25 10

20 8
ID, Drain Current [A]

EOSS, [μJ]

15 6

10 4

5 2

0 0
25 50 75 100 125 150
o 0 100 200 300 400 500 600
TC, Case Temperature [ C]
VDS, Drain to Source Voltage [V]

©2012 Fairchild Semiconductor Corporation [Link]

4
FCP190N60E / FCPF190N60E Rev. C8
 FCP190N60E / FCPF190N60E N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 13. Transient Thermal Response Curve - FCP190N60E

Thermal Response [ZθJC] 0.5

0.2
PDM
0.1
0.1 t1
0.05
t2
*Notes:
0.02 o
0.01 1. ZθJC(t) = 0.6 C/W Max.
Single pulse 2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1
Rectangular Pulse Duration [sec]

Figure 14. Transient Thermal Response Curve - FCPF190N60E

5
Thermal Response [ZθJC]

0.5
1
0.2

0.1
PDM
0.05
t1
0.02
0.1 t2
0.01
Single pulse *Notes:
o
1. ZθJC(t) = 3.2 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10 100
Rectangular Pulse Duration [sec]

©2012 Fairchild Semiconductor Corporation

5 [Link]
FCP190N60E / FCPF190N60E Rev. C8
 FCP190N60E / FCPF190N60E N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

©2012 Fairchild Semiconductor Corporation [Link]

6
FCP190N60E / FCPF190N60E Rev. C8
 FCP190N60E / FCPF190N60E N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

©2012 Fairchild Semiconductor Corporation [Link]

7
FCP190N60E / FCPF190N60E Rev. C8
 FCP190N60E / FCPF190N60E N-Channel MOSFET
Mechanical Dimensions

TO-220AB

©2012 Fairchild Semiconductor Corporation [Link]

8
FCP190N60E / FCPF190N60E Rev. C8
 FCP190N60E / FCPF190N60E N-Channel MOSFET
Package Dimensions

TO-220F (Retractable)

* Front/Back Side Isolation Voltage : AC 2500V

Dimensions in Millimeters

©2012 Fairchild Semiconductor Corporation [Link]

9
FCP190N60E / FCPF190N60E Rev. C8
 FCP190N60E / FCPF190N60E N-Channel MOSFET
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Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64

©2012 Fairchild Semiconductor Corporation 10 [Link]

FCP190N60E / FCPF190N60E Rev. C8
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Datasheets for electronic components.