Daffodil International University
Department of Electrical and Electronic Engineering
EEE 434: Renewable Energy Laboratory
Experiment No: 06
Experiment Name: Determination of I-V and P-V Characteristics Curve of one diode model
of PV Cell using MATLAB/Simulink
Objective:
To indulge photovoltaic laboratory in education and research work systematic experiment works
are necessary. By performing routine experiments an apprentice will learn how to experiment,
research with solar cells and perform at professional works.
Apparatus:
1. Solar cell/Panel
2. Oscilloscope
3. Multimeter
4. Trainer kit
5. MatLab
Introduction :
Solar cells are characterized by their current-voltage (I-V) characteristic curves. An example of
one is shown in Fig. 1. This curve shows how the voltage generated by the solar cell varies with
the current drawn from it. The I-V curve shows how the solar cell will operate under varying
parameters such as light intensity and temperature. Ironically, the hotter the solar cell gets, the less
efficient it becomes. With the solar cell being underneath the sun all day, this becomes an issue.
Two important points on the I-V characteristic curve are the short circuit current ISC and open
circuit voltage VOC. ISC is the current measured when the output to the solar cell is shorted and
the voltage across the solar cell is zero. VOC is the voltage measured when the solar cell has no
load and thus, the current through the cell is zero. These parameters will vary with increasing
temperature as ISC will increase slightly and VOC will significantly decrease.
Fig.1: I-V characteristics Curve
Circuit Diagram with necessary equations:
Fig.2. Equivalent Circuit of Single diode PV model
Sample Simulation Code:
%% Characterization Of Photovoltaic Panel Using Single Diode Model
it=input('Enter the number of curves you aim to plot: 1,2...N: ');
for N=1:it;
%% PV Module DATA
T=input('Enter the value of T in °C: '); % Temperature of the celle en °C
G=input('Enter the value of solar irradiance in °W/m2: '); % Solar Irradiance en W/m2
ki=0.034/100; % Current Tmperature coefficient(ki)
kv=-0.34/100; % Voltage Tmperature coefficient(kv)
Isc_r=5.3; % Short-circuit current
Voc_r=44.2; % Opent circuit voltage
Vm=36; % Maximum voltage @ STC
Im=4.87; % Maximum current @ STC
Pm=175; % Maximum power @ STC
Ns=72; % nomber of Cells
n=1.3; % Diode ideality factor
% %Internal parameters%%%%%%%%%%%%%%%%%%%%%
Gr=1000; % reference irradiance
T=T+273.6; %
Tr= 25 +273.6; % Temperature reference
dT=T-Tr;
Isc=Isc_r+ki*dT; % variation of Isc with T°
Voc=Voc_r+kv*dT; % variation de Vco with T°
q=1.60217646*power(10,-19); % charge constant
K=1.3806503*power(10,-23); % Boltzmann constant
Vt=(Ns*n*K*T/q); % Thermal voltage
Eg=1.12; % gap energy
Iph=Isc*(G/Gr); % photo-current
Iss=(Isc)/( exp( Voc/Vt )-1 ); % saturation current
Is=Iss*( (T/Tr)^3 ) * exp ( ( (q*Eg)/(n*K) )*((1/Tr)-(1/T)) );%saturation current
Rs=0.2; % series resistance
Rp=230; % parallele resistance
%%
I=Iph; % initial codition
V=0:(Voc/100):Voc; % input voltage array
for n1=1:length(V)
for n2=1:20 % Newton-Raphson loop for calculating output current
Vd= (V(n1)+Rs*I); % Diode Voltage
Id=Is*( exp(Vd/Vt) -1); % Diode current
Ip=Vd/Rp; % Parallel resistance Current
f=Iph-I-Id-Ip; % f(I)=0
df=-1-(Is*Rs/Vt)*exp(Vd/Vt)-(Rs/Rp); % f'(I)=0
I=I-f/df;% Newton-Raphson formula
end % end of Newton-Raphson
if I<0
I=0;
end
Ipv(n1)=I; % Accumulation of output currant
end
%%
P=Ipv.*V;% Output power
figure(1)
hold on
plot(V,Ipv,'linewidth',N)%
grid on
figure(2)
plot(V,P,'linewidth',N)%
hold on1
grid on
end
Sample Output:
Fig.3. I-V characteristics curve of a PV array obtained from MATLAB
Fig.4. P-V characteristics curve of a PV array obtained from MATLAB
Lab Task:
Plot the I-V and P-V characteristics curve for the given data.
Specification Sheet: (at 25 C and 1000 Wm )
o -2
● Rated maximum power = 200 W
● Voltage at maximum power = 26.4 V
● Current at maximum power = 7.58 A
● Open circuit voltage = 32.9 V
● Short circuit voltage = 8.21 A
● Total no of cells in series = 54
● Total no of cells in parallel = 1
● Short circuit current co-efficient = 0.0032 (A/ K)
o
Assumed Parameters:
● Series resistance = 0.221 Ohms
● Shunt resistance = 415.405 Ohms
● Semiconductor (Si) bandgap value = 1.1 eV
● Ideality factor = 1.3
● Electron charge = 1.6 * 10-19 C
● Boltz-man constant = 1.38 * 10-23 JK-1
● Nominal temperature = 298 K
Reference(s):
[1] Gilbert M. Masters, “Renewable and Efficient Electric Power System,” Wiley, 2004
[2] Kalogirou, Soteris A. Solar energy engineering: processes and systems. Academic Press, 2009