#

Chapter 5 "

Semiconductor A substance that has

resistivity
: than conductor
more a

but less than an insulator

. -p na =

(Resistance
↑ they havenegative temperature coefficient of Resistance .

decreases as temperature increases)

↑ Any impurity causes drastic
changes to the current
conducting
properties
.

Germanium (group 4)
i Outer shell electrons - ↑
-

- also known as valence

· Similar to Carbon it follows

giant covalent structure to

form a
crystalline structure
.

Example of a Semiconductor (Ge

&
1 1 ef
: 0. 7 ev

y >
Badgap [

I
-
 valence band electrons
- When the
gain enough energy they can

covalent bord and

jump to the conduction
escape the
strong
band -

This electron is now called a free electron and it

participates in the conduction of .

current

Effect of Temperature :
4 At absolute Temperature (Okelvin)
Zero the valence electrons are completely
used in covalent No extra is .
provided Hence the semiconductor
bonding
. energy ,

acts like a perfect Insulator

.

- As the
temperature is increased ,
the valence band electrons keep gaining
and more of these electrons more to the conduction band Hence more
energy
.
,

free electrons are . So

created conduction rate increases
.

-
e

-
Be
Holes

& the
higher the temperature ,
the more free electrons .
created

Hence ,
conduction is
higher (Resistivity is
lower)
↑ Every free electron formed in the conduction band results in the

creation
of a hole in the valence band .
(Also known as electron-hole

pair)
Hole :

the removal of an electron from the valence band leaves a

vacancy

in the valence band . This

missing electron is known as a hole
. It

acts as a positive charge. movement of bele(t moves in opposite direction)

Electrons jump from P-N--

-

L . This flow of election

causes a
charge to flow .
This current is called hole current
Two types of semiconductors

.
1 Intrinsic - Pure material

2 .
Entrinsic > Contains Impurities
U holes
type (has more free electrons than

P
type (has more holes than free electrons)

N type Entrinsic Semiconductor

free current 7 hole current

& The
impurities tend to be Pentavalent (Group 5) .

* For Example : Arsenic & Antimony

* Four outer shell electrons form covalent bonds with
four other atoms (Ge) .
The fifth outer shell electron

is a free electron
& Hence there are more elections in

the conduction band than holes in

the valence .
band
P type Entrinsic Semiconductor

Hole current) free e current

& The impurities tend to be Trivalent (Group 3)-

* For example : Gallium & Indium
required for
*Four electrons in the outer shell are
forming
covalent . But these
bond impurities have three outer shell

electrons . That one

missing electron forms a hole
.

↑ Hence nor of free electrons

in conduction band is less

compared to the number of

holes in the valence band
.

-
Having excess free
e or hole doesn't effect the
charge of the
material
. Both P and N
type material neutral
.
type are
 Majority & Minority Carriers :

All semiconductors have two carriers

.
1 Free electrons

.
2 Holes

·
N
type semiconductors contain more free electrons than holes
.

So here free electrons

the
majority carrier are and the

minority carriers are the holes

.

↑ Opposite is true for P

type semiconductors .

P-N Junction :

It is a
boundary or interface between two
types of semiconductor

materials, P-type and n-type within crystal of semiconductor

, a
single .

Current (vo)
Electric
O 00 O * · ① O O O * ①
⑨

I I I I I 1 I I
00 O O G D & D O 8 O D & D

I 111 I 11 I
000 O ⑨ · & O O ·

1111 I 11 I
O 00 ⑲ O
O ⑤ ·
O O ⑤ ·

I 11 I 11 I I

N ~
P type type P type N type
b
o Hole Depletion
>
-

layer
- Electron and hole recombined to form
The e

the depletion layer

.

Vo , Barrier Potential ,
is the electric potential difference that
forms across a PN junction due to the diffusion of charge carriers.
Biasing
two
types of biasing
.

1 .
Forward Biasing :
Connect negative terminal of the battery to the N
type

material of the PN junction . Also connect positive terminal to P

type .

terminal
.
2 Reverse
Biasing : Connect negative of the battery to the

P
type material
of the PN
junction .
Also connect positive terminal
N
to type

depletion layer becomes smaller

depletion layer widens
us M

Forward Reverse

↑ The potential barriers reduce ↑ Potential Barrier increases

resistance low & Resistance

& The
of the junction is
High
& Current flows & No current flows,

* In practice a
very small current

flows due to the minority carriers .

This current is called reverse

saturation .
current
 IV curve :

knee voltage

It
Breakdown
Voltage is the minimum
voltage when the PN
: reverse

junctions breaks down and there flow of .

is a
huge reverse current

Knee
Voltage
: It is the point when the diode starts to conduct

large amounts of .
current

↑ Article 5 20
.

(self study)
Chapter 6 Semi-conductor Diode
A pu junction is known as a semi-conductor or
Crystal diode
.

↑ It allows current to pass in only one direction.

t -

P-type N-type

Diode behaves like a switch-

-
When forward biased it acts like a closed switch
.

* When biased it acts like switch.

reverse an open

a
preversebins
~

~ un

Forward bias
Cclosed switch)

D, forward biased

D2 Reverse biased
.
A

How of current
 Positive half cycle :

D2 closed and D2 open

- Negative half cycle :

A
De open and D2 closed

Therefore input voltage and output

voltage (Vacross resistor are the same·

Resistance of Crystal Diode

Forward biased diode conducts whereas binsed
easily reverse

diode doesn't . Therefore forward resistance is

very small
compared to reverse resistance
.

Forward Resistance :
- forward voltage
OA
i .
de forward resistance :
Rf
I

OB
- forward current

ii .
as forward resistance :

of
= change in
voltage across diode
in current diode
Change through
oc-oa
Vj =

of-od

d
2
Reverse Resistance :

It also has do and as reverse resistance

. It can be calculated

in the same process

.

infinite
Ideally reverse resistance is but in
reality it is not infinite

but is a
very large value e.

Equivalent Circuit of diode

(i) Approximate Equivalent Circuit :

diode
VF Forward
voltage
<
across the

Vo - Barrier
voltage [Ge
=
0 .
3 v dy Si = 0 .

7v]
If 0 Internal Resistance of .
diode

If - Forward current across the diode

.

A FF

O
Vo Pre
Characteristics curve of Approx model
(ii) simplified Equivalent circuit

↑ Internal resistance is
very

small and can be .

neglected

A FF A FF

O
Vo Pre Vo
Pre
simplified model ideal model

Examples to practice : 6 2 to 6 11:

.

Upto this
Half wave Rectifier for tutorial

=
Umsing

Transformer allows step-up or step-down

of the ac
voltage . It also reduces

the risk of electric shock as

the ae
supply isn't
directly forwarded verse biased

connected

↑ Suput and output have same freg

,
 Efficiency of a half ware Rectifier :

&C

Far =
Ed = do
=m
&*
Vu
sino do
its
-

CafretR)
-Im
Vu

EritR)
↓
**
=

"n
-

in2) +

I
Em
·
" d .
c .
power ,
Pdc = FXR =

[EXR
AC

I
I = Imsinc LOS A

Erms = &(0)
0 NOZA

(Imsinodd
I
=

[t(1 - cs20)do]
= -zog
=

Ex
Irms I
: Pac = Erms (v) + Rz) =

[ (re + Rc)

Rectifier
d . c. output power (Im/a) x Re
:
efficiency = =

a. c output power (m(e)" (r++ R2)

00406 RL 406 ↑ Max
efficiency
= 0 .

- + Ru 1 + I
RL
,
0 906 (2006
Example 6 . 12-6 .
15