UNIT-1

Basr Electonics Egincenng

Science nd enginer eng
(s the ficld of
&lectrontcs
and ti liz'aton of
that deals with the study , de sion appliation areas are :
electon devices. dome of the majo
ommunication dystems
Tele communications
’ dotellfte Communíçation
y Bonner Electtonics
émort phones Equipment
’ Teleristion and sudio
aming Gonsoles
’ ttoust hotd Appl°ances
iy Bomputing and information kchmolgy
’ Personal Bompters
’ dervers and Aata centres
Laptops ard Tablets
iv) Medical lectronfcs
’Medical Arices
’ teath Monitor tng
V) Atomotive lectronics
’ `ngine Gontrol
’ 4nfotatrment dystems
dofety systers
vi) Aerospace and Aefence
’ Avion íes
’Sefence dystems
dtomation amd Gotrol
Vi 4ndustrial
’ PLC s (Aogrammable logic Bontrolers)
s Robot ics
vii) Renewable EnergY
dolar Pouwer
Wnd pouwer
aneagy stoage
 )
I)'&vironmental Monitoring 4nstruments
|X) Researh ond Sctentific
Xi) Tele medicine
xXi hpace &aploratlon
ctronics - Vacuum tubes to Nano tubes), -
*Evolution of &le
Electtonics 8
electvonics from vaccum tubes to
The evolution of
nano- electromis is
Vaccumm Tubes C19005- 1950s) -
tubes or themioni
Vaccum Tubes , also known 0s electron vaccum
electzonic Componerts
valves uotre the frst proctial ampliftation
were used for sqral and switching n
tubes
Voaccum tubes
|eaty rodios, telbistons , and tompurlng devices and were
were selativehy arg Consumed a lot of power,
prone to failores
|) Tzgnsistos (I94) - at Bell labs in 1444
The inventíon of the transisto
oilliom shocklts
by Tohn Bavdeern, Walter Bxattoin amdcoere much Smalter
evolutiomized electaonics Transistors
and m0te etfable thanvo cumtubes Taarnsistors ployed a
(oucial ole tn the digtal evoluton enabling Smalles and
|moxe efficient electronfc devices5-1460s) :
(TCs)Ci950
i)4ntegrated Gircults Noyce tndependenty developed
Jack Kil6s and Robert
cocuít
cticuit (+0)
(IC) In the late oq50s and eaaly
the Pntegrated muHiple tansístors
1a60s Is allowed the fntegotion of a
amd other electonic Cormporiets onto single silicon chip
s- 1480s) -
iv) Microelectonics ( 144O Semicond
The 1qÎS and 1980 s Saw advomcements n
and
manufactuaing proce sses ,, enabing Sralltr
moe
ucto
taonsistoxs on 1Cs . Mickoelectzonics ployed
densely patked
Tole n the ise of pesonal computeas.
|v)Nomo -elertrontc s CLate aoth cerntuay - present) i
Nano- electionfesfocuses on,electonic componerts
ct the manoScale typically involving stauctures otth
dimensiOns less than, l00 ngnomeeoS.
Ni Beyond siliton (on going) s
As transts tor s approached atornic Scales , quantum
stgnificont ole in their
mechanical effects begon to phy a signijicont
behaviou dot -- based' ond sptn - based (sptntonics)
Quantum dot
to toadittonal tronsistos.
devices have evolved as atteo nattves
oepre Sents
The evolutlon from vaccum tubes to nano- electoonics
eo
a oemazKable
Pogresslon tn techmdogy ,, with each stage
bairging abotl sallex, more cfficiei and pouerful
eleton îc devices
deniConductor Materals
’ Jorbidden Enerqy ap i the valene electzons,
kands, Which possess
The Enerqy
alence bond Gonduction band is he meat hiqhe
Cre called &lections tn this
enerqy level consists of free electoons .

and onducin
and take part n Conduction he valence band
band ane sepexated 6y an eneaqy t6and), çap EG alled as
|dor6idden `nesgy op Based on Band Giap
t &lassification of Materias Gonductor
are clossified Into nsulatozs,
The materials the eative wi dths of the
and Semi - conductos osed on
for bidden enedgy gaps
Cneogy Encrgy Entrg9
condudion
Band Corduclion Conduclion
Band Band
wide Srnall
eneogy Cneogy Oves lapping
Valence valence
Band Band
(æ Jnsulatos diydenmiconductoxs () Gonductoxs
 n am insulattng mateial a large fo bidden gap
|eotists between the valance band ond Conduction band.
Jhe {nsulattng materials are díamond ,glass, wo0d. tnica,
Paper etc-,

Jhe forbidden enevgy gap is zevo in the case of

(onductozs. Á metal u90rks a veoy good condutor
i) deni- bonducto8S
ore the
Ñemi- Bonductors 'are thematerials in whích the
az0und LeV.
foa bidden energY g9p is very lous, ire,
t Glassfication of demibonductors: Such as
demiBonmductors ore classified into two types,
i) intzinsic Semiconducto
i) ¿atrinsic Semi Conduct0Y
’ ntoistcderni Conductos
conductor in its pure 00m is knowm as
A serni ae the
rtinsic Semi conductot yemanium and siliconelectronic devices
fmpontant semiconductors used in
too most conductor3 :
stouctuze of intainsic Semi
i) Goystalline silicon
atomS

covalent Si
tand

Si Si

valence
elect nons

Si
) lzingic semi Conductor at 00m tempeature
At absolutt ze0 ) ah intrínslc Seniconductor
if the tempeatuae
behaves 0s a pesfect pnsulato . But,C300K),
ncYeased pto 00om temperatyre SOme Covalerit
is bond oreaks , the electton
bonds byeak hen a Covalent
of the oond becomes free and mores throughs foamed.
the
the electaon
Cystal When th leaves a va(any
is a hole tence, ohen a ttee
known 0s
|Jhs vacanty hole s also produced
eleetron is produced , a

stmutane us ly

Si si Si
free
electoon

Ho le
Si

’&trinsc deniconductor:
fmpue foom
Jhe sernmi onductoo matexials , ohich ae inof adding
axe called eoteinsic Sernícorductos. The process
is called doping
fmpuzity to a puve Seni conductor matexials
Anpuzitíes aue the
Jhe u sed to dope the
intainsic semionductoz mategals Jhese mateials an be of
Awo types Such as
i) donor impuoity
iy aceptos Pmpuzity
)Jonor mpusity moteaial,
i which is be ing used
used as impuaity irn the
Jhe
Pr0cess of doptnq, Is alled as dopart when
the dopant is
valence
a pentavalent atom i:e the otom Cortaining fve
electrons then to called 0S the dono7 mpuaity and
he dyptng ts called as-typedonoretofnsi
dopirg Semi
AonorConducto
doping .Jhe
hused to mavrfocture N
exomples of pent0va lent, oY donor fmpusitie s ave Asemic,
Phosphorous and Artlimony
i) Aeceptor shen
mpuzity Ps a tivalent atom ie. the
tHe doportthree
valene electvons 4hen it
atom consisttng of only thmpunfts and the doping s alled
s called 0s aceptox
oceptor dopirg Aceptox doping s used to manufactle
P-type estrinsec Semi condutors. the enamples of tivalent
as

OY acceptor tmpuaities ae boron,allfam . Aluminium

Ond 4ndium. fmpuaity added
Bependfng upon the types of
f (onductors,'such as,
etoinsic semi
there tuo typs
)n-type serniconducto
p-type Semi conducto
N-type semíconductor -
pertavalent tmpuity atoms ae added to
# semionductor is obtatned.
intainsc semiconducto,ntype
silicon
aloms

ovalent Si
bond

Sb S
silion
valence
electDOns

Si Si

Avtimony fifh volence

atom electaon
 ’Bhange s tn the energy band diagrarm of N-type semicondudoy

Conduction
band
Io-otev energy level
forbidden gap of donoY (Ep)

Valence
bond
deni conductor : added to intrinsi
|3) P-type atoms " are
type mpurty
4 trivalent EmiconductortS obtained-
Semi conductor , P-type

st si
Indium
atorm

S
In
-hole

Si Si

in the band diagram o P-type emiconductoa ;

eneog4
energy

conduct ion
bond

AcceptoaEnegy
Ieyel(EA)
forbidden q
Joorev
sPN juncion Diode .
Brasng : the process of apciying he voltage to the Semi.
Conducto5 of a diode 1s caled bia stng
+0
+O
+O 4

4
ittout bnsin
There ae tuo types ot biasThg
) f0202d bias
iiy Revese btas
| fo7wond bias he bottey
tn fonad bias the tve teominolandof -ye teaminal
Connected to the P- type semiconductozs miconductos.
se
of the battey bnnected to the N-type

l e (mA)

Cut in voltoge
Si=0.4V Gie =o3V
iy Revese btas :
An oevese btos the positive teominal o the bottey
Connected to the
the teomr
type Seni corductovs ond Negotfve tors
to the p-type semiconduc tn
fof the battesy connec
HeveTse bias deple ton vegon
-A+

,Boakd0u)l
vottoge/

*v-I charoctersttcs of PNjunction dio de

(MA)
fooavdbas

b eokdown

vottoge
Cui in
votBloge

Revese bias
-Ig(A)
 *foncood geststace of a dode
she veststonce offered by, the PN junction diode n
Sovtuard biased condiion called oraoond eststance 4t
1s defined tn two, unys i: Such 0s
y 6talic foawand gesistonce
4 b) dynamic foscOoad esistance
a) satic orcoard esis tance s PN junction
Jhis ts the boGOad esistance of
ciocuit and the
diode when PN junction s used n Dc denoted
Tesistance is
applied fozcoaadvoltage iSs D:C. This
|as R'
forad De vo taqe
forward Cudient
|bjDynanic foroand zesístance ;
Jhe dymamie Tesistonce s reciproal of +he slope qf
the forcad charoacteistcs
AV
AI Slope of foscuatd characteyistics
Revese esistane of a dYode :
juncion ofjes lage vesistance In the vevease
Jhe pN [Link] is defed tn
biOsed Conditon called eyexse
two ways Such as esistance
a) aevesse stotic
b)eVese dyramicesistance
o Reverse stotic seststonce - teststance undex DC Cond tions,
Jhis 1S eve se
denot ed 0s R t es the atío of applied xevevse
votage
t0 the oeveSe soduration curent Io

Applied eveSe voltage

Reverse soturation cuoxeni
 Cuent

Boeakdoun
voHOge
o.3V
7eVerse foraond
votHage I, in NA vottoge

2evese cue

dynamic Teststane i Tesistonce undea the AC

b) Revevse everse ntal change
Jhís ts the is the ratio of incoeme
Conditfons, denoted as ky 4
votoge applied to the aoresponding change
fn the vevevse
in the everse Curent: exse
in veveTSe voltage
chonge in
in everse current
change
t Diode &uorent oqucton relatiomship
he diode curent equation expaesses the a function
between the cuorent flowrg through he diode os
ltage applted acaoss t Mathe matiatly he diode
of the vo as :
urvent equatton Coh be apressed
Ip Toe 1

where Ip diode cus7enl

Io dode evese satuvatton cuoaent at 00rn
temperatune.
esteonal vottoge applied to the diode.
KT 1l600
T vott equivalent tempevatuae.
-23
K [Link]'s Constart = l:38 xI0s/k
 9: charge on the electon - lr603 X10 "t
T= tempeature ot the diode jmctorn CK)
9 tdealty facto

ods

hoh

.
 Zenes Diode :
Tt is O heautly doped P-N junction diode opesotes
in the sevevse bias
the bseakdousn Begion dusing
Zenes diode alloos to flow fsom anode to
Guyent
then the
Cothode Itke roal diode in foOObd bias,
nosroal

devesse Voltage veaches bseahdourn voltoge. in nosmal diode,

discitated
the Cussent thsou the junction and the pouoes
ot the junc Bon ill be higb, the nosmal diode gets
[Link] in the bseakdouon
The Can be designed to opete
Such as zenes diode
by heotly doping
Synbol of Zenes diode :
Anode Cathode

Opesation :
The Benes diode when t wosks in xevesse bias poovides
lang omount of aioget at boeakdoon vottoge point The
a
electsical bseakdoun Can happen to appsoaches Such as
Ozenes bseakdouon
Avalanche boeokdoon.
OZenes Bseokdon:
Ihe )
3enes bseakdown OCcUsS in the zenes diode
|having 4< 6 Votts. In Zenes diode the P and egjons
ave
heavily dsect uptuse of
doped, and Covalent bonds
takes place due to the stsong electsic Relds at the
junction. The e ohich ase fsee availoble fo6 Conduction.
The incsea se fsee Corntsibutes to losge sevetse
sev
Cussent at Constont olue of devesse bias and breakdown
Occused due to zenes effet.
Avalanche Bseokdo,on ;
Ih the TevesSe bias, the Conduction is due

to the ninostty Coosiess. AS the Tevesse bias Incsea se 5, these

sll aceelesate. The kinetic enesgy Ossocated
minosity Canoiess
usith them incsea se s. "hese' acelesotede ubuxe the Covalent
bonds and Cseate new e hole paios, then Colloide ith
imnoble fons. hese phenomengn calle d dvalonche ultiplicaton.
A lange amourt of aoyest flows in the evesse bias due
to Avalanche bseakdouwn.

V-0 chosoctesisacs of zenes diode :

Ihe behavious of Zenes dRode is Sinilas
to nobmal diode in bias
fooabd and the behauious in
deves Se
bias is bosed oh thebseokdoun phenomenon.
Fosuwasd Sas Zenes diode :
When the onde of Zenes ciode is Connecte d
to the positive tesminal of the DC -SousCe and the cathode
Gonnected to negotive tesminal of DC- Sou8ce, then, the
Zenes diode Said to be ouooÛd
biased. lhe behovics of the
foowo7d biased Zenes diode is identical toto the
the foouo0d bias
ovcinasy code. R
Anode

cathode
Kevesse bias of Zenes diode:
When the anode of the zenes clode 1s Connected
to the tesminal oft te DC- Souoce an d the Cathode
hegative
posiive tesminal 0f DC- Sousce then the
Connected to positive
Zenes diode is Soid to be deverse biase d. Ln the evesse

bias if the Voltoge applied is incseose d, the junetion

bseok doon on devesse Guosent inceases shosply. The votoge
ot this Point is Called byah doon oltoge (B). The
byeak down depend's Oh the uidth of the
depletion loyes:

V-I Chaactesisics of Zenes diode :

Fosuoasd
bias
Tegion

-V

I,min Cut in loltoqg

Zenes
bseokdoon
vegion
I,max

V
Minimun Zenes Cusöent :
is defned as the mini mum sevesse Gsent,
ohese the bseakdown becomes stable.
Maimun Zenes Cusent
detned os the mogimum Cusent
Tt is defned
diode Can wthstond withat exceding ts poues soting
Bipolos Juncion Iaonststos (8T):
A Bipolos Junction Tsansistoö is o thsee teominal
Semi- Conductos device in ohich the Conducion depends on both
majesity and nincity chosge Causiess and hence, the name
)

Bipclas
*Wliom Shockley ond Jobrn Bosden ot Bell lobovotoöy invented
the tsonsistos in 1951. The BJT has zeplaced the bulhy
Vaccum tubes and is Smolles in size.
* These tanststoyS uidely used in Computeos, soteltes and in
Communicatfon Systes
Consuction of 8TT:
A 8JT is a
singe caystol of tlion co geonanium
thot Conists of thsee esenty doped Semi Ccnductos
) The Enittes
vegjon
9The Bose segfon
3)The Collectos vegjon.
Enittey Base Colecdos
E NpN oc NP

a) NPN Tsonsistos b) PNP Tbansistos

Emittes (E):
an outes egion situoted on one side of the tsonsisto.
The funcion of the emittes is to inject chaxge ca
cassies S

Rhe electsons Case o-f NPN Tansistos ond holes in

Case of PNP Tsonsistos ioto the Base. Ihe Emittes is

heavily dope d to Supply 'mong chosqe Cossiets.

Base (B):
The bose is physicaly locate d bho the émi tes and Collectos
is genesaly a lFghty doped, thin layes. "The function of ts
egjcn to pass all, the chooqe CorBieos (elecscns,holes) into
the Collectog.

Collectos ():
is the otes tegion stuoted on the othes side of the
toansistoo . Dt is nodesately [Link] functicn of the Gollectus
is to Colect the ciosqe [Link] Clectos vegion is
laoges thàn he emites seqion,
physcalls
the collectos has to
dissipote powez.
A Tsonststoy hos two PN Juncions. one junctlon is foned
the emittes ond the base is hnoun. as Emittes- Base
Tocico. The ondhes junction is oómed blw the base and the
Collectos and is hnon as Gollectos- Bose Junction.
Ivanststos Synbols
Emittes Colleetos Collectos.
(E) O oc)
(E)o o()
Ernsttes

B) Base
o)PNP Tionsistos b) NPN Tionsistoy
Woshing Pantple of Tionsistos :
A BJT Semi Conductos de vice with thsee
|layess O Emittes
(2 Bose
® Gollectos
These loess ase nade up of gesnonium os silCon The BJT
opesatoss based the movernent of chosge cavoiess, with in
these loyess. A BJT opesates based on the Contsol oo of
Cuo bent blus the emttes and colleetos
flow of
by manupilotirng the
chaige Casiess thrcuh the base vegion.
Tronsistoo oith no b0s :
ertenal Dc is applied blo the
dfeset teominals
no

of
voltog
a tsonsisto" Then he toan sts tos is
Sal d to be in unbiased stote open cis [Link]
d:fhuston of chasqe Caoiess actoss the junction psoduces
two depleticn degicns- t pooduces tuwo depletion loyess But the
thsee begions hove diffesent doping leels. So that the depletion
width hot the Same fos the two juncons: Because the
emittes s heavtly doped then the ba se and the [Link]
th of the ernittes. base de pletion loyes is Smalles than
the sidth of Golle ctos -base depleticn segion
 EmiHey to base Collecton to base
dephen loye deple on byen
N

Enieso oGollecto

Ba se
ig :Tõansistos uith no bias
Aodes of opesotioo of toonsistog
hen DC Voltoqes aae applied acoosS the diffeset
tesminals ofof the tsansistos, then this psocesS is called biasing
these 2 juncons in tonsstos oÉnittes- Bose junction
Collectoy- Bose junction
ond each of these two moy be fosuDabd bias o8 8eVexse
bias. Ihese fous modes
axe
of
biasing his tuo junctions.
Mode Emsttes- Bo6e Collectos-Base Begion of
Jünction. Jünction Opesation
Foswad biosed Bevesse biased
Ackue "Regton
Foswosd biased Fosuoasd biased Sotuzation eqion
Revesse biosed Bevesse biased Cat-0ff Region
) Bevesse biosed foso03d biased Tnvease Active
Regton
Actve Beqion :
Dn this xegion Emittey- Base Júnction s
the
fobuavd bias and collectos ba se junction is xevexSe biaS.
The ollectoy- Eittes cussent is Poperio
psopostio n¡ to the
base Gassent, but many times lodges foo Small base
Cussent, Wasiable) Vosaotions. Tl is also Galled ineas vegion- Th
d
this Yeglon the tonss tos acts bettes on arnplifes.

+
+ |VEB

B
Satun aHon
qo

4hig the
eHen Bae Jun ction
and
eoye junckon ane
fos wand
he tran siston operas the io
wher
Satunaion
o"gion &mitHen Collector -Bare
tor wand bio, nhich
Poodureg hgh Cunnernt
thig gfon the Collecton Cunnent
be comeA
mode
Sndeundont the boie Cunnt,
conApord£ to legical on ton) cleed sultdh
 B
this segon both the junctons sevesse biased.
These is Veny lee Gussert due to minosty chasge Costes
The tyonsistoS losical off state Open Switch
Tnuesse Active Beqion :

VeB

By vevessing the biasing Condi-ions of octive segion, the

tionststo goes fnto the învesse acive segion .The eittes and
Collecto
segions Siteh dolls in this mode. Since, the
levels of the emittes and ollecto% doping
not the Same, the
collecto Cannot inject the mojoty ot the chege Cassiess
into the base. Tn this
vegion the aclion o tyansstos
Poos.
Opeotion of NPN Töanststos : (2
N

Consides NPN Tian sis tos T.e; biased to opeste in

egion. The fos00xd active
ias applied to the tmitteg- Bose Júnction
of
NPN tonsistox alows many
electsons to -floo fsom the
emittes- segion towasds the base degion. As well few holes also
Move
fiom the base segon to enittes vegion: Tkis flow of
e and holes fosms the Emitteg Cussent (:) Feuw electsons
Combine with holes
fooms Base Gusoernt (TB).
entes into Collectox he-maining e
segion $ foons ollectos Gussent (I).
Thesefose,
Opesation of PNP toonsistos :
Consideslc PNP tbonsisto în hot s biosed to openote tn
actve tonsisto. he fonwosd bias applied to the emites
base junc tion of PNP toonsistos ollouws mony electss to
flouo 4om the emittes egicn touods base egions. few feu) e
also fsom the
move
base degicn to emittes tegion:This few
Plow of holes and electscns fsorn fosms the emittes auszent
feo holes
eledtsons ond fosms the Base Grssernt
Combine s with
and the
demoining holes ertes into the collectos vegion
foöms the ollectos Grssent: (Ie).
ond

Toansistos Snigucia
CWhen bipolas unction tyon sstos is Connected n
cisait one
tesminal is used as input tesmina) and Second
tesminal is used a5 output tesminal. The thisd
tesminal fs
Common to input ond outprt
These 33 types of
) Common- Base
Coniguations
) Gomrnon - EnittesConfqusotion (CE)
Conigusotion CE)
)Comon- Colecto: Coriqusofon (cd.
) Common- Base Confqusotion (ce) :
 O n ommon toonsistos Gonfigusotion be
bose the emittes s
input tesminal
tesninal and the collects is the outgut teuninal at
the base of the toonsistos Common os both tesminab.
This is also Called as
gsounded kbase Configusoticn
Input Chazactevistics
inp chovactestslscs Guove deines the delation blu
input o the
emittes Qusbert (I) and
VgE at Emittex to base segfon Volkage
Constant utpt vottoge (VeB).
* By heeping the Gollectos to
to base voltoge
emittex (Vee) Gonstont the
Gusbent i6
incsease by
incseased by keeping the Neg VEB.
* CWhen is
of the base vegjon will
Constant the idth
in decseose. Ihis esults fo încsease
LE. Ie(mA)
)
3'

Output chasactesisties
* The
output choaoctesis ics Gusve defines the
Cussent (Te) and ollectos to
selation blo Collectos
base votoe (Vea) by keeping the I
50- Acte seqicn
Constont.
Sotusoton

I = 30uA
3o1

204 -Ce 20A

Cat 0f seqio
 CussentEGiatn ;
Ihe Guvsent gon of the tonsistos ts ce Contgoso
-On is
defned as the dato of Collectos Guooent () to
the emttes Guosent (ie)

Leokage Gussent (ceo(o De:

When the emites iuncion s foswobd bias and the
Colle c toy junc hon is then gtLe. But when
evesse bias TE
base jun clion of the tsansstoo is open cscat, these is no
flou o-f ensittes Gussert in the tonststos hen no base auert
and
CGallectos [Link] to the mtnosty
minctby charge Cosaess
in the ollectos - base junction sevexse bias psoduces a Smal)
Cussent.
this is Called Leakoge Gu3sent.
denote d with
Wok:T

De-Tceg
Tg +Ie
 (16
non - Base
Conigusotton the value of the ollecto'
colecors
ussent is s. 25 mnA ond the value of emites aussent Is
o65 mA. alaulate the Common ba se De Gussent gain.
Sol: Givern doto,

= Yo65 mA
DC
Grssent goin în CB
Conkguaton,
4. 25x lo3

Common tttes Coniguaton : Rc

Rg Ig
Vec

VBE

Common Emites ookgsaton Base 1sis the input tesrinal

Collectos is the outzt tesminal and emit
emites is Common to
both înput and outprt tesmingls. DH is also Called as
Groounded Emites Contqusaion
Cnpt Chavactesis tics:
* The
input chosactexistic Guoye deines
the selotion bluo the
base Gussent (C) and Base to
Emittes Voltoge (VeE) at
Conetont bltage (ve).
 35 VcE=OU

3004

200

o-gVE(V)

Outat Chaoetesstics:
Setusotigion
)

70 )

Aettve seqion
So

g = 804A
Og =60uA
30

20

3 6 1
Cot off eglon
The chovoc tesistic Guve defnes the delation blw
and
Gollectos Gaussent )
Collectos- Enittes Noltoge (Vce) by heping Base- Guzsent Ce) Constort:
Cussent Goin : (8)
The DC gain 0f a
tsonsisto in a
emitter ontgura tion tio of ColectoyComon
defined as the sotio
(1) to the base Gssent (g).his is also Calle GuyTent
colle dd as uSxent
ampltAcaton factuy zepsesented as'p'.
B =
 28
Leokage aBsent:
the emites - base Junctio is opened the ihut (oo) bose
Cusbent is Zeso.
* Tcte o flou's ble Gollectox od ernittes kis leokoge ent
due to tuo foctos.
) Thesmaly genesoted minoity Cavaiexs (Te acoss the ollectoð -
Bose Junction
2) The movement of holes 0cKoSS the base- erittes Juncion.
Due to the floud
flou) of holes the emittes - base junction
is
shgty fosoasd- bias. Hence, an oddi tionol Gusöent BCcBo is
genevate d.
The total leokoge Gusvent,

The totol Gllecto Gussent in CE Gonfignation

BIp+ (1+
+

)Tthe value of B toonsistoÑ

is loo- Tf the
the Gollectos GuÑsent is value of
20mA, then detesmine theValue of
Base Gussent
Sol: Give doto,
Lc 20 mA
WkT
B Le
20x 1o3
B I00

O2 m A
Comnon olectos Conqusaton :

VEC

Common
input Collectos Gonfiqusa tion Enittes is the output and the
base ond
Gollectos is Cornnon fos both input and
output Tt olso Colled as
the Gruounded Gollectos
Tpt Chavectesds&cs : GonAgusaion.
8o
Go

20

The chooctesis tc Guave deffnes the

velation blu the Base osert
(De) and Base-
Collectos Voltoge Vg) by heeping the volBoge (Vec) as
Con stont The pro cess
used hee incseosing the Vgc and
the note douon
Gostespon ding T¡ Values at
Chosocteistic Guove. Gonstort(VEc) and dso the
Outpt Choocteiss :
The chouocteaistc Guove deines the
the
Emittes- Gllectos Voltage (Ve) ond Emittes selation blu9
Keeping ioput Base Gusient (T) as Constont The Gssent (Ie) by
poo cess used hese
in cveosaing the (VE) and note doun the CosNes pondin q T,
Constont Values at
 6
-îg: 804A
-I8 :60MA

-IR 20uA

3Vc (v)
Cussent 9ain :
n cc iontiqusotion the bc ausdent is de-fined as
the otio f iEmittes Guosent (Te) ond Base Gusent TB)· T5is
1s olso alled as Govent ompication foctos: Tt is repsesente
uoith .

Relatoo blu
Divide above eqution oith Ie on both sides:
TE
+

|-d
 Relation bo B and :

B
r E

Divide the obove

obove eequoion
quotion uwth Ie.

Wk.T
B

|+ B

I+B
|-d

Form (2

OA toansistoð is
woshing oth de 0-96,
Calalate the values
0f B and ).
s: Given,
WkT

B = 0.96 o96
| -0.9 6 O"04 )B=24
 Galaulate the Values of Te and Ie fos a tsansistos B2
wtth d99, Deen: SAA and Da is measuted as 20MA
So|: Gtuen dota,
d= 099
SuA
= 20, A

WokT

0-99x2OxIo6
|-0-99 I-099

19-8x10 + 5x\o

24.8x (o6

>2480 xI06

z l48 m A

20x16 + 2.48x Io
-0-020xI03 + 9. 48xI03
='2. So xI0 A

|Te - 2-5SmA)