100,1

$EIIfiIGONDITGTOR
DETfIGE$

POr

-fhe
In t['re 1 l tlt smn<Iard, r,ve have studied band theory of solids. ilnpurity atoms clonate rhe electrous to Ge or Si. Hence
the irnpurities like Sb, As are called donor impurities.
Conduction Band Donor errergy level lies just below the conduction band.
---,--- I
(c'B')
In n -type serniconductors. electrons are the majority
carriers while holes are the rninority,carriers., and 11. >) n,,.
t_r
l- (Jt... r

'Ii-" 0r8.) lf we dope a plrre Ge (or Si) crystal with a trir,alent

lence lland
impurity'like Indiurn (or Aluminium), the extrinsic
Va
semiconductor so obtained is called a p-type
(I) For ntetals" C'.8. and V.B. overlap semiconductor. 'fhe Indiurn impur ity accepts the electrons
ti'om Germanium, hence it is callecl the acceptor irnpurity.
(2\ In senriconductors. there is a small energy gap Eg. It
ln p-type semiconductors,, holes are the majority carriers
is ahout I eV. For Ge, Eg ._- 0.66 eV for silicon" while electrons are the minority carriers and hh ,, fl..
lig=- 1.12eV
l-he acceptor energy level lies just above the valence band.
(3) Insulators have a large energy gap between the C.B. Both n-type and p-type serniconductors are electrically
and V.B. (about 5 e\')" e.g. for diarnond, neutrai.
Eg - 5.5 eV [1 eV - 1.6 x lO-re J]
When a p-tlpe serxiconductor (say Ge) and an n-type
ElectricaI cor]ductors are dir,ided into three types: Ge semiconductor are joined together, the comtnon
(a) conductors (metals) (b) insulators (c) semi-conductors. interface between thenr is called a p--n junction.
Semiconductors are further divided as :
The electnrnic device containing a p--n junction is called
(I ) Intrinsic semi-conductors - pure semiconcluctors a junction diode.
(rvithout inrpurit"v) e.g. Pure Ge and Si.
larrirr potcntinl;
For them. no. of electrons (n.) - No. of holes (n,,)
and nenh - ni . tl

At absolute z,ero, it acts as an insulator. o i-lole

r Electrou
(2) Extrinsic semiconductors : A doped Ge or Si crystal
is calied an extrinsic semiconductor. The addition of J unctiun
controlled atriount of impuritl/to a semicclnductor is S, l-)*plction Regiorr
called dopirg. Doping is expressed in ppm (parts (a) p-n Ju nction Diode (U nbiased )
per nrillion).
n If we dope a pure Ge (or Si) crystal rvith a pentavalent n
LI
Anocle Cathode
impurity like antimonl, or arsen ic, the extrin sic
sern iconductor so obtained is called an n-type (b) S"1*mbol
semiconductor.
Y
S emic ond ucto r I) e vi c e s I ilry5

o A thin layer on both sides of the p--n junction which is In a halfwave rectifier, the junction diode rectilies halfot"
devoid of the rnajority charge carriers is c:alled the theA.C. wave. During the positive half cycle. it is tbru'ard I

deptetion region. The r,viclth of this region is about l0-6 biased. l{ence it conducts and the current flolvs in thc
m. It depends upon the doping as well as the temperature. circuit. In the negative half cycle, the diode is reverscl
biased and the output is zero or no cttrrent passes tltrough
The potential dittbrence created across the junction due
the circuit. This is repeated for further cycles. l-hus thr'
to the diffusion ofelectrons and holes is called the potential
current always f-lows through the load lta, in the sanie
barrier. The barrier P.D. is about 0.3 V 1br Germanium
direction, fbr alternate positive half cycles. Thus ptrlsating
and 0.6 to 0.7 V for Silicon.
D.C. voltage is obtained acrosr Rl.
The barrier electric field across the depletion region is
ln a flill
wave rectifier., both halr,,es (positive ancl ttegative)
dV
given by E _ . It is of the order of 105 V,'m. oftheA.C. input signal are rectified. Twojunction diodes
* are used in the circuit, for firll wave rectification. In this
The p-n junction is equivalent to a capncitor. in rvhich the case a centre tapped secondary transtbrmer is usecl.
depletion region acts as a dielectric.
p-n iunction
o Forward Biasing: If the positive tenninal of a battery is A c{iode ([)]
conrrected to the p-re,_eion and the negatitze terminal is
conitected to the n-region of a p- n junctiotr, thejunction
diode is fbrward biased.
In this case, the external P.D (V) applied across the
junction opposes the barrier P.D. (VB).
*il B
s
Circuit lliagram of a Flalf vy'"at'e Rectilier
If V, VB, forward current starts flowing in the circuit. In
this case the width of the depletion region is reducecl.
Dt
o Reverse Biasing: When the positive terminal of the
battery is coltnected to the n-*region and tlte ttegative C Diode
terminal is connected to the p_-regiott. the junction diode
is said to be reverse biased.
In this case (i) the external P.D. is in the satne direction as
VB. (ii) 'Ihe junction offers a ver)'high resistance to the
nilt Tran-, Diode
Itl)ut

flor,v of diffusion current. (iii)The width of the depletion :

region is increased. (iv) A small reverse current flows due
Circuit Diagram lbr Full Wave [Link]
to drifting of minority carriers zlcross theiunction.
(i) When the junction diode is fbrw'ard biased, we find Ripple Factor : The output of a rectifier is a pulsating
the diode resistance (dftramic resistance) as D.C. It consists of (a) an a.c. component and (b) a d.c.

dI slope of (l \ k
In forward characteristics (graph of'l against V) the
cornponent. The a.c. component in the ottlpttt is kno\\/tl Als
the ripple. The effectiveness of a rectitler deperrds trpon
the magnitude ofthe ripple. For a good rectifier tlrc ripple
should be as small as possible.
voltage at vrtrich the cutrent starts increasing rapidly For a halfwave rectifier, the ripple lrequency is tltc :;ame
is called the Knee voltage. lror Ge it is 0.3 V and for as that of the input a.c. For a full w'ave rectiller. ripple
Si it is 0 "7 Y. frequency - 2 times the fiequency clf input a.c.
(ii) The forward current is in mA r,vhile the reverse Ripple factor is defined as :

currellt is in pA.
rrns value of A.C. conlponent
(iii) At the p-n jrnction two types of current exist : R.f-. =

(a) Diffusion current [o due to the difTerenc'e in the

concentratiott of holes atrd electrons attd
P er ce n,r*.'.i[, : : ?;1 ; :iffit"
Fitter Circuits : The output of a rectiller is in the ibnl ot-
(b) drift current (IDR) due to the forntaticln of electron
d.c. pulses. It is unidirectional but it has trot a steady value.
hole pairs due to thermal collisions. These two
It fluctuates because ofthe ripple or a.c. componeni riding
currents flow in opposite directions.
on the d.c.
A rectifier is a device u,hich converts an alternating
The circuit used in a d.c. power supply to relll(r\t'thc
voltage into a direct voltage. A p-n junction can be used
ripple is catrled a filter circuit. It produces a ver)'strit-rotit
for rectification because it oflbrs a ver-v small resistance
u,avefbfffi, similar to the waveform produced h)'a batterli
when it is forward biased and a very high resistattce when
For filterin g, a capacitor is connected across thc output ot'
it is reverse biased. For hal{wave rectification a single
a rectifier.
junction diode is used but tbr firlhvave rectification two
junction diodes are required.
I 006 ill a rv e I P I t.t,si cs M H T- C ET
o Capacitive Filter : Working : F or proper rvorking oi'a zener rliode itre input
voltage must be rnore than the zener voltage {\' z) i.e. V;,
Y, and then the extra r,'oltage (V - Y z.) appears aL-ross
g-t 'utpul
Rs.
The voltage across R, remains coltstant and it is equal tcr
'I'he output of the full wave rectifier is a pulsating d.c. \/',2. The zener diode acts aS a voltage regulator or voitage
stabiliser.
voltage. It is applied across a capacitor (C) and a load
resistance (Rr-) as shown in the figure. The capacitor is Notes :

able to store electricity. The capacitor is charged and (1) J'he series resistanc:e Rq, lirnits the cttrrent flo\l'
discharged at regular intervals. During its discharge it through the zener diode.
delivers the load current. The pulsating d.c. r,oltage has
an a.c. colnponent as well as a d.c. component.
(2) When Vi,.,out is increaseci or dect'easerJ,ze{rer current
changes, ttut the zener volta-tle remuitts constant.
'l"he
a.c. coll-tponent is bypassed through C or it is filtered
A photodiode is a reverse biased p-n junction ciiocle. t,ight
and 'iL srlooth d.c. voltage appears across the load
is made incident on its p-n junction (and depletiotl region).
rcsistan ce .

through a tratlsparent w'itrdow. Wlten phtltons ol'etterg)'

When a power supply is connected to a load, generally a hv > Eo (band gap energy of the serniccitrductor), tirll on
drop in output voltage is observed. A D.C. power supply the phdtodiode, electron hole pairs are proclttced. They
rvhose output voltage changes, when a load is connected are separatedbythejunction {ield and macle to flora'across
iicross it. is called An unregulated power supply. A D.C. 'f
the junctiort under the intluence of the reverse hias. he
po\\er supply r,vltose output voltage remains steady under photocurrent is of the order ol li:tr' f [,4, artttr it clcprerlds
conclitions of changing a.c. input or changing load, is upon the intensity of radiation.
callccl a regr"rlated por,ver supply.
A pirotodiode (or photodetector or photrisensor) is used
Ircrr a half lt'al'e rectifier, the elliciency + 4l% as a detector in optical conlmrtrticatiott. It detects the
lror a fulI wave rectifier, the eft-rciency + 8l% optical signals reerching the receiver. i t cott verts the light
signals into electrical signals, so that the transmitterJ
A Zener diode is a properly doped, reverse biased,, Silicon
information is decoderl They are also ttsed as sensors in
(or Ge)junction diode, operated in the breakdown region.
remote con trolled receivers.
The breakdown is of two tlpes : (i) Zener breakdown -
due to breaking of'covalent bonds due to strong electric When a photodiode is operatecl in tile dark i.e. wherl it is
treld and (ii) Avalanche breakdown due to collision of not illuminated, there is a reverse saturation current, solell'
electrons with atoms (Impact ionisation). They are due to thermally generateci rnirrority c'harge carriers. Il is
generally used as voltage regulators, i.e. for stabiiising called the dark current. It is olthe ot'Cer of'picoamperes
(keeping steady), the output voltage of a power supply. to nanoamperes.
For proper working of a zener diode, it must satisfiz three The reverse current of a photodiode deperrds on the
conditions :
intensity of illumination olthe incidcnt lisht.
(i) It should be reverse biased. Dark resistance of a photodiode (R.r) is the ratio o1'

( ii) i,tiltage across it (Vr) should be more than the zener maximulr reverse voltage and its clark cttrrent.
voltage (tY ). Maximum Reverse Voltage
Rd
(iii) The c:ircuit current should be less than the maximum Dark Current
zener current.
Applications of Photodiode :

mA (I ) Counters and Switches

L-
(2) Burglar alarm systems
TI
(3 ) Fibre optic conlmunication systelns
CJ
a (1) Photosensors tbr accurate measurentr:nt of light
$3
cJ')
r)
intensity

L
50
,4

*() p n junction diode

Solar cell : A solar cell is an unbiased
that transforms sunlight (solar ener.-q)'') ittro electrical
Vtrltage Regulator Using a Zener Diode
energy" It w'orks on the principle of'ptrtltovoltaic
[Link]"gylrv>
F-ronr the circuit rnain current (I)
(energy gap of the semiconductor). are incident on the p---

- Zener L-urrent (Ir) + Load current (IL) or I : Iz+

' It_
n junction, they are absorbed by silicon (or Ge), and
and input voltage V - Y z+ IRs -- Y z-r (lr+ IL) RS electron-hole pairs are forrrred ancl their flou' through the
load constitutes the current. Thus the illunrinated p-11
junction behaves like a batter)' or a sotlrce of d.c. [Link].l.
Solar cells generate photo voitages ot'().5 V to l.l \'.
-
Semiconductor Devices 1007
I
LEDS emit light of different colours.
F rolrt Contact Materials used fbr getting dif}-Lrent colours
(i) Gallium Phosphate [GaP] ernits green or yellow light.

n-region
(ii) Gallium Arsenide Phosphide [GaAsP] emits red or
yellor,v light.

'..S"Ttionf,
(iii) Gallium Arsenide (emits infrared radiations).
l-J

The general shape of the I-V characteristics of an LED is

p-regron
similar to that of a nonnal p-n iunctiou. But the barrier
potentials are very high.
[(cat [.ontact
(i) The colour of light emitted by an LED depends on
Separation *f {lill"riers in a Solar Cell its bandgap energy. For an LED, to emit visible light
(I:0.4 pm to 0.7 pm), the minimum bandgap energy
Working of a solar cell : When light is incident on a
is 1.8 eV.
solar cell.,
(1) Electron-hole pairs are gelterated in the depletion
(ii) T'he intensity of light emitted by an LED, depends
Llpoll the fbrward current conducted by the junction.
region of the p-n jur"rction.
LEDs emitting light of different colours are used for
(2) Electrons and holes are separated and collected at
display in calculators and alphanumeric display (letters
the cathode atrcl the anclcle respectivelyi
and numbers) in display instrutnents. They are used in 7
(3) When the)'are acculllttlated, a voltage is generated -fhey
segment display units. are also used as a light source
across the cell and nhen tlte [Link] is cc-rnnected to an in optical fibre comrrlunication.
external circuit, electric currettt florvs through the
Clircuit symbols for fbur types of diodes :
circuit. Clilrrent produccd in a solar cell is called the
light generated curretrt. t,ight incident on a solar cell (i) Junctiondi0de:ft
produces it cllrrent and a voltage to generate electric
power.
Materials used fbr solar cclls Llre :
(ii) Light ernitting diode (LED) :
.<
1) Silicon &
\.X
(

(2) Galium aresenide

(3) Cadmium teliuride' (CdTe), etc" (iii) photodiotte'&-
Light Ernitting Diode (LtlD) : It is a fbrward biased p-
n junction diocle, rnade ticlnr a selnicnnch"rcting material
like gallium-phosphide. which etnits light. when a current
(iv) Zenerdiode: ffi
is passed ttrrough it"

Transistor : It is a three terrninal semiconductor device, made by sandwiching a thin slice of an n-type semiconductor
between two bigger pieces of a p-tlpe semiconductor. [p-n -p] or a thin slice of a p-type semiconductor between two bigger
pieces of an n-tlpe semiconductor [n-p- nl. It has twojunctions and three terminals. The current in a transistor is carried bv
both electrons and holes. Hence, it is called a bipolarjunction transistor.

L
lplrl
B R
Holes flort' frtlrtt E to Ii Electrons flow from E to B
(p-n-p) (n-p-n)

(Schematic Symbols for Transistors)

The arrow shorvs the direction ofthe conventional current. The arrow is from p to n.
A transistor has three regions.
(i) Middle section callcd the base (B). It is thin and lightly doped.
(ii) Ernitter (E): It is heavily doped than the base.
1008 Marvel physics MHT_CET I

(iii) Collector (C): 'fhe collector region is larger than

the emitter region. Its doping levc-l is in between the (iii) Voltage gain Av: -tv"-
AVr
doping levels of E and B.
A transistor has two junctions. For the proper \vorking of Change in output voltage
a transistor, the emitter-base junction is forward biased. Change in input voltage
Its resistance is very srnall. The collector base junction is
vo
reverse biased. Its resistance is very high. In this case the
(iv) Voltage gain A - vr A- BRq
,R1
transistor is in the active mode (region) of operation. -or
It is fbund that in a transrstor circuit : 0 , ..ristance gain
Enritter Current (lE) -.: Base Current (lb) + Collector AIc
Current (lc) (v) Transconductance (8,r.,) - AVee
Io is in microampere., while Ia and Iu are in mA.
(li) Power gain - Voltage gain x Current gain
A transistor is a current sensitive device.
Transistors are rnainly used lbr current amplification. Powergain:ffi = P3. xResistancegain
There are 3 modes of connecting a transistor in a circuit.
(a) Common emitter configuration: Emitter comlnon to In a CE arnplifier, there is a phase difference of 180"
between the input and output voltages.
[H HI,Y T,:T' ::T H; L: :. i::1'+ ;::' : ilrJ,Til A device which increases the arnplitude of the input signal
current gain and voltage gain. is called an amplifier.
(b) Common base mode., and [C]B rnode) For a comrnon base transistor amplifier, we consider its
(c) Common collector mode. ICC rnode) Ic-
(i) D.C. current gain c[
:=
There are three characteristics of-a transistor, rvhen it is in IE
CE mode.
(i) Input characteristics : (lu against VuE for constant 0u. I
(ii) A.C. current gain
:=
^tc at constant V.r'
vcu)
^,,
I
(ii) Output characteristics : (1., against Vco when IB u is always less than I while p has a large value. The
is kept constant) relations between B and cx, are
(iii) Current transfer characteristics t Ic against [s
D cx'

when VcE is kept constant. Their slope gives the u

'lct and U- ==
current gain p.
1+p
Logic Gates : Logic gates are electronic switches used in
For CB mode, we get different input and output
digital electronic circuits to change the input voltage to
characteristics.
some output voltage according to some logical
relationships between them. They are called gates because
they control the flow of signals or information.
RBr For a logic gate, there are one or more input signals but
,*, tll only one output signal. Logic symbols, functions and truth
tables of various logic gates are as follows:

vin vF+r,.
(i) OR. Gate : It produces high output when any one or
all of its inputs are high. OR gate represents a logical
addition.
T'ruth thble : It gives all possible input combinations
and the corresponding outputs.
Typical Transistor Amplilier Circuit
Inputs Output
For a common enritter transistor amplifier, we consider A B Y_-A-+- B
the following parameters :
0 0 0

(i) D.C. current gain [] - FIB 0 I 1

I 0 1

(ii) A.C. clrrrent gain 0u.

:1""]
[ru. I
at constant VcE.
I I 1
>-l

S e mic o nd ucto r D evi,c e s t 009

Logic Symhol (iv) NAND gate : (NOT:-AND gate)

I npul A NOT gate

-:A.t] Y
Input rl
tlrA B

Y-A+ B isread as Y-A orB. This is the Boolean AND gate followed by- a NOT gate
expression lbr an OR gate.
INOT of AND is NANDI
(ii) AND Gate : It produces high output, only w'hen all
of its inputs are high. The AND operation represents The output of the AND gate is the input ofthe NOT
a logical multiplication. gate.
Truth Table
A
Inputs Output I nput Y (Outpttt)
t]
A B Y 0r Y=A R

0 0 0
Two input NAND gate
0 1 0

I 0 0 Truth Table
1 I 1
Input Input Output

Logic Symbol A B Y- AB
A Output 0 0 I

0 I I
B B
1 0 I

Y is equal to A and B is the Boolean expression for I I 0

anAND gate.
For a NAND gate there is a high output for low input
(iii) NOT Gate : It has only one input and one output. [t
and low output for high input.
produces high output when its input is low and vice
versa i.e. the output is the NOT of input. The output of a NAND gate is exactly opposite to
that of an AND gate.
Truth Table
(v) NOR gate : (NOT-OR gate)
lnput Output
A Y ,,\

0 1
B
NOT gate
v
1 0
()R gate

Logic Syrn bol OR gate fbllowed by a NOT gate.

Y Output lNO'f of OR is NORI
\/Y __A
- (Boolean expressiott)
A
It is read as Y equals not A. Y:A:B
B

The bar over the [Link] indicates inversion or

Logic symbols for NOR gate
negation. A + B indicates the inversion ofA + B.
AND., OR and NOT gates are called the basic gates. Truth Table
NOT gate is also known as an inverter because it
Input Input Output
produc'es an inverted version ofthe input at its output.
A B Y=- A+ B

0 0 I

0 I 0

1 0 0
t
I I 0
 -l
Jr.

l0l 0 t( urve I Physics MHT-C ET

It has an output l, only when all inputs are zero Boolean Expressiort :

(Lorv).
Y-AOR
The output of a NOR gate is exactly opposite to that This gate is used in complLltational logic circuits.
of an OR gate.
Construction of NOT, AND and OR gates using a
Both NAND and NOR gates are called universal gates. NAND gate or gates
Theyperforrn all the logic functions ofNOT, OR and AND
gates. Logic gates are used in con'lputers, calculators and (I ) NOT Gate : When both the inputs A and B of the
automatic control systems irt industrli NAND gate are-joined together to get one input,, we
get a NOT gate.
(l) A signal in which cllrrent or voltage varies
continuouslv r,vitli time is called an analog signal. In this case irrput A'-=- B and output -_ Y.

(2) A signal in u,hiclr cun'ent or r,'oltage can take only

two discrete values i:i called a digital circuit. [T'he
two values are 1 and 0, which indicate ltigh and low
values. The digital signals are in the form oI'pulses
ofequal level.l NOT gate l'rom l\,\l\D gate
XOR (Exclusive OR) Gate : It is a circuit with only two
inputs and one output, in which the output signal is high,
(2) AND Gate : When thc output of a NAND gate is
the input of the NOT gate (rnade frorn the
tused as
if and only if the two inputs are at different logic levels.
w'.r.t. each other.
NAND gate, as sho\vn ahove), The combination acts
as an AND gate.
Logical Syrnbol :

A
A
Y B
l] ()utput
Input (3) OR Gate : For this \\'c Lrsc tr,,t-r NAI..ID gates, convert
them into NOT sates.
'fhe outpr-rts of the two NOT

Truth Table gates act as the inputs of the NAND gate. The
combination acts as an 0R gate.
Input Input Output
A
A B Y- AB
0 0 0 N{)1-

I 0 I

0 I I

I t 0 h{()7
-
S e mic ond ucto r I) evir: e s t0t I
.,

::..
MULTI PLE cHolcE

1. Energy Bands in Solids 5. When the electrical conductivity of-a senti-cnndttctor is

only due to the breaking of its covalent bonds. tltett tire
semiconductor is said to be
(a) Donor (b) r\cceptor
' : r. r::.:

(c) Intrinsic (d)

:.: _j 1..:, '. :.:.' ;:t..1:::..:..: :
.: ..: r': ..: :::: r:1 'j;:itrt::.1:
.::t::

[Link] i i...[.H{IE.U,' ii'..,

Extrinsic

{6. In case of a semiconductor, which one ot'the fbllorvittg

statements is wrong ?
l. I arlron,siiicon and germaniutn atoms have fbur valence
electrons each. T'heir valence and conduction bands are (a) Doping increases conductivity
separatecl hl'enerEy band gaps represented by (En)c, (Eo)si (b) Temperature coetficient of resistance is negativc
ancl ([-,.)1,g rL-bpcutii,-ely. \\thich one clf the foito"i,i[
relatiorishiirs is true in their case ? (AIPMf, 2005) (c) Resistivity is in between that of a conductor ancl
insulator
(a) ( Er,)r '. ( Eg)si (b) (Ee)c . (E*),,.
(d) At absolute it like
zero temperature, hehaves a
(c) ( Eg),-. :' i [:,]5; (d) 1t-,r)c . (Ee)si conductor
)
b. {n ml irtrti}et*r (MHT:CET 2012) 1
l. Which one of the fullowing, when added as an intpurity
(a) the valen0e battd is partially filled with electrons to silicon, produces an n-type semiconductor 'l

(b) conrluc:tiritr band is partially filled rn'ith electrons (AIPMT" I99s)

(c) condrrc-tiort trand is empty and the valence band is (a) Phosphorus (b) Alunrinittnt
fr I ted u,i tlt electrons (c) Magnesium (d) Both (h) and tc)
(d) conducticln tland is lllled [Link] electrons and valence 8. The increase in temperature of a setniconductor, u,ill
L-ancl entpty
(lvIHT-C:IiT 2007)
(a) increase its conductivity
(b) decrease its conductivity
(c) not af;flect its conductivity
3. Sn-rall pieces of'Copper and Germanium are cooled from (d) reduce its conductivity to zero
rclonl tc-lrperature to 100 K. Then the resistance of
(.AIEEE, 2003; AIPMT 1993)

(a) each of thenr decreases

(h) each ofthern increases
9. The electrical conductivity of a semiconductc-rr increases
(c) Copper decreases and that of Germanium increases when electromagnetic radiation ofwavelen gth shorter ttian
(d) Gernianium decreases and that of Copper increases 2500 nm is incident on it. What is the band gup energt'itt
eV for the serniconductor ? th : 6.63 x 10 31 J-sl

2, lntrin$ic and Extrlnsic Semiconductors

(a)
@f, 1997;
(b) 1.2 eV
AIEEE, 2005)
0.9 eV
(c) I .8 eV (d) 0.5 eV
10. In the energy band diagram of a material shown belolt'.
the open circles and filled circles denote holes and
electrons respectively. The material is (.4IPl[T 2007)
4. A senlicr:ncluctor is known to have an electron C
concentration of 8 x l0l2 per cm3 and hole concentration Bc
of -1 x I013 ller un3. 'rhen it is
T
(a) a p-t),pe setlliconductor Eo

{ b) nn n -t;",pe selri icondr-rctor J:

(c) an irttrinsic selniconductor Ev *are- V
(d) errher a p-type or an n-ttpe setniconcluctor
 -l
I

t0t2 Man,el Physics MHTLCET

(a) an insulator 2V
(b) a nretal J.{ rl
(c) an n-t)pe seffriconductcr nrA
(d) a p-type semiconductor rl--c uttrttr o I

II " Which one of the following statements is u,rong 'l

.[unctiort Diode
When a potential diflerence is applied across, the current
passin g t hrougtr (rrT) (a) thc p.d. across the resistance R decreases
(a) iltr insulator at 0 K is zero (b) the p.d. across the diode increases
(b) a serniconductor at 0 K is zera (c) the p.d. across the cliode remains constant
(c) a rnetal at 0 K is zero (d) the current in the rnilliamnreter is doukrled

(d) a reverse biased p-n junction diode at 300 K is finite 16. Ifthe fbrward hias voltage of a junction diodes is increased
12" When a battery is connected to a p-tlpe semiconductor fiom 0.8V to 2V the current increases by 4 mA. The
rvrth a rnetallic wire, the current in the semicclnductor
lbrward resistance of the diode is
(prcdorninantly), inside the metallic wire and that inside (a) 100 Q (b) 200 Q
the batlery respectively is due to (c) 300 Q (d) 400 fJ
(a) I-loles" ions, electrons (b) Ions, electrons, hcrles
17. Which one of the fbllor,ving semiconductor diodes is
(c) Electrons, ions, holes (d) Holes, electrons. iot"ts reverse biased '.)

sv%
3, PENJunction Diode:Construction, (l)
:
Forward and Reverse Biasing and *t0v%
(2)
Rectification
(3) 1 0v -*, . Fl.-,, ,,, ,* =
5v
(4) {$ - . ,- Fl ---,, 15V
(a) 2 (b) 4
(c) I (d) 3
l -3. ,\ sen"Iiconclucting device is connectecl in series r,vith a 18. A half wave rectifier is used to rectify an alternating
Lratterl' and ei resistance. A current of 10 mA is found to
voltage ol' fi'equency 60 Hz,. The number of putses of
pass throush the circuit. If the polarity of the batterv is
rectilled currerlt ohtained in one second is
rcl'ersed. the current drops to almost zero. The device (a) 30 (b) 120
nt a1r bs (AIPMT, 1998) (c) 60 (d) e0
(a) an intrinsic semiconductor 19. Which one of the fbllorving serniconductor diodes is
(h) n type senliconductor fnrward biased? (AIPMT, 2006)
(c) p tyle semiconductor
(d) a p__n junction
(2)
0 2v
14"
3V
C \ *trtr!\r,--b
-2V - *2Y
(3)

(1)
JV 6V

S iiicon Diode (a) 4 (b) 2

ln the ahove circuit, the voltage drop across the resistance (c) 3 (d) I
(R)is 20. In which one of the fbllow,ing devices the reverse biased
(a) 3V (b) 2Y characteristics of a p-n junction diode are used'/
(c) 1."1.V (d) lv (a) Amplifier (b) Zener diode
15" Sorne current is flowing in the milliammeter in the (c) Oscillator (d) Logic gate
Iollur,r ing circuit. If the applied voltage is increased fi'onr
:[Link]
-
S emic o nd

21.
ucto r D evic' e s

In the following circuit (c) Increases if forward biased

(d) Remains the same in reverse and forward biasing
1013 l i

30. What is the resistance ofthe diode circuit betu,een A and

B. (D, and Drare ideal diodes)

Dr
4A 1{>
YYVY

(a) Dl and Drare forward biased A

(b) Dl and I), are reverse biased l), l0 r)
(c) D, is forward biased and D, is reverse biased
(d) D, is reverse biased and D, is forwarcl biased (a) 7 et (b) 8Q
22. A junction diode is forward biased. If the flcrrvard voltage
(c) 9 e) (d) l0 Q
is increased from 0.4 V to 0.7 V the forward current 31. In a p-n junction, the thickness of the depletion region is
changes by 1.5 mA. What is the forward resistance ofthe l0-5 m. What is the P.D. that should be applied across it,
junction diode? to produce an electric field of intensity 10-5 V/rn '/

(a) s0 f) (b) 100 e) (a) 0.s V (b) 0.75 v

(c) 1s0 f) (d) 200 s) (c) 1V (d) t.2s Y
23. The depletiort region of ap - n junction is formed 32. A potential barrier of 0.5 V exists across a p-n junction.
What is the width of the depletion region ii a constant
(a) when it is forward biased
electric field of magnitude 10s V/m exists in the depletion
(b) when it is reversed biased region ?

(c) during the process of its manufacture (a) 3 pm (b) 5 ptm

(d) when its temperature is decreaseci (c) 7 Wm (d) 4 ttm
24. In a halfivave rectifier, the output fiequencY is 50 Hz if 33. The potential barrier ofa semiconductor is 0.6 V at room
the input frequency is 50 H:2. What is the output fi'equency temperature. What is the approximate value of its potential
of a fullwave rectifier fbr the same input frequency'/ barrier, if the temperature is increased by 20"C ?
(a) 50 Llz (b) 100 FIz (a) 0.7 V (b) 0.8 v
(c) 25 Hz (d) 75 Hz (c) 1.00 V (d) 0.s v
25. When the resistance between p and n regions is very high 34.
then the p-n junction diode acts as
(a) an inductor (b) a transistor
,t'
(d) zener diode
(c)

(a)
a capacitor
26. In a p - n junction,
drift
electric conduction takes place due to
(b) diffusion
FI ?

(c) drift and diffirsion (d) barrier potential The current through the diode in the given circuit is

27. The current obtained from a filterless rectifier is (a) 1 mA (b) l0 mA

(a) an eddy current (b) sinusoidal current (c) 5 mA (d) zero
(c) varying direct current (d) constallt clirect current 35. When the p-end of the p-n junction is connected to the
negative terminal of the battery and the n-ettd to the
28. In the case of a p-n junction diode, if the reverse bias is
positive terminal of the battery, then the p-n junction
very high, there is a sudden large increase in currellt. In
behaves like
this case the value of reverse bias voltage is known as
(a) Cutoff voltage (b) Critical voltage (a) a superconductor (b) a capacitor
(c) a semiconductor (d) a conductor
(c) Knee voltage (d) 'Zener voltage
36. The electrical circuit used to get smooth d.c. output frr:m
29. What happens to the depletion region of a p-n junction '/
a half'wave rectifier circuit is called
(MHT-CET,20ll)
(a) an oscillatorcircuit (b) a filter circuit
(a) Decreases if reverse biased (c) an amplifier circuit (d) a logic gate
(b) Increases if reverse biased
t0 t4 Marvel Phlt sic s M H T\C ET
37. What is the current through an ideal p-n junction diode (a) 6V (b) 0.6 v
shownr below ? (c) 0.7 V (d) 0v
D lOOQ
44. A diode having a potential difference of 0.5 V across its
junction is connected in series with a resistance of'20 e
and a source. A current of 0.1 A passes through the
resistance. What is the voltage of the source 'l
(a) l.s V (b) 2.0 v
--
(c) 2.s Y (d) sv
(a) Zero (b) 10 mA
45. In a reverse biased diode, when the applied voltage
(c) 20 mA (d) 50 mA changes by I V the current changes by 0.5pA. Whar is
38. What is the current in the following diode circuit'/ the reverse bias resistance of the diode ?

--+ v p-n 300 Q *l v (a) )x 10s Q (b) ) x 106 Q

(c) 200 f2 (d) 2Q

(a) 0A (b) 1o-2 A 46. The barrier potential of a p-n junction diode does not
depend upon the (AIPtutT, 2003)
(c) lA (d) 0.10 A
(a) Temperature
39. The depletion layer in the p-n junction region is caused by
(b) Diode design
(a) Drift of holes
(c) Forward and reverse biasing
(b) Diffirsion of charge carriers
(d) Doping density
(c) Migration of impurity ions
47. When a p-n junction diode is forrvard biased, then
(d) Drift of electrons (AIPMT, 1991)
(a) the depletion region is reduced and barrier height is
40. A junction diode has a resistance of 25 S) when forward increased
biased and 2500 e2 when reverse biased. What is the
current in the diode, for the arrangement shown ? (b) the depletion region is widened and barrier height is
reduced
5V l0 a 0 v (c) both the depletion region and hanier height are
reduced

(a)
1
A (b) (d) both the depletion region and barrier height are
15 +^ increased (AIEEE 2001)

(c) ,s
I
(d)
1
A 48. If a full wave rectifier circuit is operating fiorn 50 Hz
^ 480 mains. the fundamental frequency in the ripple will be

41. When forward bias is applied to a p-n junction, then what (AIPMT 2003; AIEEE 200s)
happens to the potential barrier VB, and the width (x) of (a) 100 Hz (b) 25 Hz
the depletion region ?
(a) Vu increases, x decreases (c) 59 l1z (d) 70.1 Hz
(b) Vu decreases, x increases 49. Application of a forward bias to a p-n junction
(c) Vu increases, x increases (a) increases the potential dift'erences across the
depletion zone
(d) 1r* decreases, x decreases
(b) widens the depletion zone
42. [n an unbiased p-n junction
(c) increases the electric field in the depletion zone
(a) p and n both are at same potential
(b) high potenti al at n side and low potenti al at p side (d) increases the number of donors on the n-side
(AIPMT 200s)
(c) high potenti al at p side and low potenti al at n side
(d) lorv potenti al at n side and zero potenti al at p side 50. The barrier potential of a p-n junction depends ott the

43. What is the potential difference between the points A and

(i) tlpe of semi conductor material
B in a circuit containing a silicon diode ? (ii) amount of doping

2Q (iii) temperature
Which one of the following is correct'? (AIPMT 2014)
(a) (ii) and (iii) only (b) (i), (ii) and (iii)
(c) (i) and (ii) only (d) (ii) only
-
Semiconductor Devices t0l5
51. A rectrfier is used to (MHTL(:ET, 2007) (b) electric field is maximlrm
(a) convert dc to ac (c) potential is ntaximunr I

(b) amplily a rl,eak signal (d) electric field is very very srnall
(c) convert nc to dc 58. Two p-n junctions can be connected in series by three
(d) generate intennittertt voltage dillbrent rnethods as shown in the figure. If the potential
diffbrence applied to the junctions is the same, then the
52. The frequency of a given AC signal is 50tlz. When it is correct connections will be Qrr, t ggg)
connected to a haltl-lvave rectitrer, the n umber of outpr"rt
pulses given by the recti{ler in 1 s is
(a) 2s (b) rs0
(c) 100 (d) s0
II

53. The depletion layer in a p-n junction diode is I 0-6 m wide 2

and its knee potential is 0.5 \/. then the inner electric field (a) In the circuit (I) and (2)
in the depletiotr region is
(b) In the circuit (2) and (3)
(a) J x 10-7 V/m (b) 5 ,r I 0s Vi nr
(c) In the circuit ( l) and (3)
(c) Jx10-lVrm (d) Jx106Virn
(d) Only in the circuit ( 1)

59. In a p-n junction diode not connected to any circuit (f IT)

(a) fhe potential is the sarne everywhere
(b) The p-tlpe is at a higher potential than the n-type
54. A semiconducting device is connected is series with a side
battery, a resistance iind a microammeter. It is found that (c) Therc- is an electric llel,J at tl-re junction rvhich is
there is practically no current in the circuit" But il'the directed tiom the n-typc side to the p-type side
polarity of the battery is reversed, there is a sudden (d) There is an electric fleld at the junction which is
increase in the curretrt. The device may be directed tiom the p-type side to the n-type side
(a) a p-tlpe selniconductor 60. The peak voltage in the output of a ltalf-wave diode
(b) an intrin sic set Il icon ductor rectifier fbd with a sinusoidal signal without trlter is I0 V.
What is the d.c. coltlponeltt of the output voltage '?
(c) an n-type setniconductor (AIPMT, 2OO4)
(d) a p-n iunction diode
10 ' \
10
55. The dominant mechanisnr tllr motion of charge carriers (a)
\ / ,12
r\ (b)
\/
in forward and rcverse biased silicon p-n junction are Tt

(a) Drift in fbnn,ard bias and diffusion in reverse bias (c) lOv (d)
20

(b) Diffusion in fbnvard bias and drift in reverse bias -v 7T

61. Whicir one ol'the fbllowing diodes is rev'erse biased ?

(c) Dritt in both fonvard and reverse hias +5V
(d) Diftusion in kroth torward and reverse bias (IIr)
56. For the diode D, the fbrr,varcl resistance is zero and the
backward resistanc'e is infinite. It is connected in a D.C.
circuit as shor,vn in the fi-uure. The potential diflbrence (l) Re)
betweenXandYis
--10v

10K()
30v
(3) (4)

(a) sV (b) r0 v (AIEEE, 2006; AII'MT 2004)

(c) ls V (d) 20 v (a) Figure 2 (b) Figr-rre 3
57. In the ntiddle of tlie depletion layer of a reverse biased
(c) (d) igure
F igure 4 F
p-n junctiotr, the (.A|EEE, 2003)
1

(a) potcntial is zero

t0r6 Marvel Physics MIITLCET
62. A semiconductor diode (D) and a resistor R are connected The current through the battery is
in some way and are kept in a closed box, having two (a) 0.s A (b) 1A
external terniinals. When a potential diftbrence of 1 V is
applied to their combination, the current I : 25 mA. If
(c) 1.s A (d) 2A
the potential dif1brence is reversed, the current becorres 66. What is the value of D.C. voltage in a half wave rectifier
50 mA. What are the values of R and the forward resistance in converting A.C. r,oltage V - 100 sin (3ll t7 into D.C. ?
of the diode 'l (a) 100 volt (b) 50 volt
(a) 40 Q and 40 Q (b) 0 f), "o (c) 32 volt (d) 0
(c) (2, 1 2 A (d) 40 Q, 20 Sz 67. Which one of the follor,ving is the correct statement
63. Which circuit will not show the current in tlte atnmeter ? regarding the depletion region of an unbiased p-n
junction ?

(a) lts width does not Cepend Lrpon the densities of the
impurities (dopants)
(b) Its width is considerablydecreased when it is forrvard
biased
(c) The electric field in the depletion region is produced
by the electrons in the conduction band and holes in
the valence band
(d) The potential barrier across the jr-rnction produces a
very strong electric field
68. The circuit shown in the figure contaitts two diodes each
(a) Figure I (b) Figure 2 with a forward resistance of 50 Ohm and with infinite
backward resistance. [f't]re battery voltage is 6 V the
(c) F igure 3 (d) Figure 4
current through the 100 Ohm resistance (in ampere) is
64. A semiconductor X is made by doping a germanium crystal
with arsenic. A second semiconductorY is made by doping Dr
r50 Q
germanium rvith indium. The two are joined end to end
and connected to a battery as shown. ['hich one of the
Ibllowing statements is correct ? D2 soa

(a) X is p-type, Y is n-type and the junction is forward (a) zero (b) 0.02 A
biased (c) 0.03 A (d) 00364 (IIr)
(b) X is n-type, Y is p-type and the junction is forward 69. For the given circuit of an ideal p-n juncticln diode, which
biased one of the following is correct ? (AIPMT 2002)
(c) X is p-type, \' is n-type and the junction is reverse Diode
biased
(d) X is n-type, Y is p-type and the junction is reverse
biased
65. [n the given circuit.
ff
D1
5f) (a) In reverse biasing the voltage across R is 2 V
(b) In fbrward biasing the voltage across R is 2Y
D) l0O (c) In fbrward biasing the voltage across R is \/
(d) In reverse biasing the voltage across R is V
5f)

10 V
-r
Semiconductor Devices

4. Zener Diode, Solar Gell, LED and

Photodiode
77.
(a) l0 x l}ta Hz
(c) 5 x 1013 Hz
(b) 20 x l0l3 Hz
(d) 5 x l01a Hz
Consider the following statements A and B and identifiz
the correct answer.
I0t7

l
(A) A zener diode should be connected in reverse lrias
for lrroper ftrnction ing
(B) The potential barrier of a p-n jurction lies between
2Vand5V
70" The colour of light enritted by a LED depends upon
(a) Both A and B are correct
(MHT-CET 200e)
(a) its forward bias (b) Both A and B are \ /rong
(b) its reverse bias (c) A is wrong and B is correct
(d) A is correct but B is wrong
(c) the material of the serniconductor
78. In a circuit a diode was used and the output voltage across
(d) the arnount of forward or reverse current the diode was always 50 volts, even if the input voltage
71. A general purpose diode is more likelyto suffer avalanche fluctuated between 1 10 V to 90 V. The diode used in the
breakdown rather than zener breakdown because circuit was
(a) its leakage current is small (a) a junction diode (b) photodiode
(b) it has low reverse resistance (c) zener diode (d) light enritting diode
(c) it has strong co-valent bonds 79. What is the value of the output voltage V,, in the following
(d) it is lightly doped zener circuit ?

72. GaAs is used to prepare K

(a) a zener diode (b) a light emitting diode
(c) a transi stor (d) a half wave rectifi er
73. A solar cell u'orks on the principle of
(a) photoelectricity
(b) photographiccamera
(c) photovoltaic conversion (a) 7Y (b) 8v
(d) photosyrthesis (c) ls V (d) 23 v
74. LEDS used for ,_eiving infrared radiations are prepared 80. What is the load current in the follorving zener circuit ?
fi'om
K
(a) Silicon dioxide
(b) Gallium arsenide [Ga As]
(c) Gallium phosphide [Ga P] l6 KA
vo
(d) Gallium arsenide phosphide [Ga As P] RL

75. A light emitting diode is shown as

(2) -{>I- (a) 0. 1 mA (b) 2.5 mA

(3)b (4)6 81.

(c) 3.5 mA (d) 5 mA
Light emitting diodes are used in 'alphanumeric' displays
ofadvertisements. This means that the display consists of
(a) only letters like A, B, C, D
(a) 3 (b) 4 (b) on ly numbers l ike , 2, 3 , 4
7

(c) 2 (d) 1
(c) Both numbers and letters
76. A p-n photodiode is rlade of a material with a band gap (d) only pictures
of 2.0 eV. The minimum frequency of the radiation that
can be absorbed by the material is nearly

[h : 6.6 x l0- 34 Js] (AIPMT, 2008)

t0l8 Mun,el Physics MHT-CET
82. In a p-i-n diode solar cell. the width ofthe depletion region (a) l0 mA (b) 5.67 mA
is increased by using (c) 5mA (d) 3.33 rnA
(a) a p-tlpe senticonductor
(b) an n-type selnicottductor 5. Transistor and its Ch aracteristics,
(c) an intrittsic semiconductor Transistor as an Amplitier
(d) an n-p-n transistor
83. Which one of the fbllowing currents remains
approximately constant, rvhen the source voltage of a zenet
diode stabiliser is increased ? $ffi.H,,BfiHlS:..,.,,.,.H8VH,H.',, .'

(a) Zener constant (f,) Loacl current

(c) Total cun'ent (d) Series current
88. In the study of transistor as an arnplifier, u' - Plp and
84. For emission of-light.a light emitting diode (LED) is
(MHTLCET, 2010) _I
D:
t) ('
t lYllLlr''( L.,
where In- and I,, are the collector, emitter
(a) always usecl in reverse biased coudition Ig

and tlase currents rerspective:ly. The correct relation

(b) never used in fbnvard or reverse biased condition betw'een u and 0 it given by (AIPMT, 1997)
(c) used both in the fbrrn,ard ancl reverse biased condition

(d)
clepending upon its application
alw'ays used in forward biased condition
(a) [r=: T tH) P---#;
(d) p:: +-
1 -j- c/
(c) P :: C[ l+cr
HIGHER LEVEL 89. When an n--p--n tratrsistor is userl as an amplifier
(,4tr888, 2004; .AIPMT 1996)
85. What is th e zener current in the following circuit 'l (a) holes rnove fiom entitter to ltase
5 K (lr) [roles ntove froni base 1o etriitter
(c) electrons move fiom base to collector
(d) electrons move li't-rttt collector to base
l5{} v 90. Iror a transistor circuit irr conlrron enritter configuration,
the vcrltage gain is 1t)0. It'the input voltage is 20 mV then
the output voltage is
(a) 400 m\i (t)) lV
(a) l0 rnA (b) l5 mA (c) 2V ({i) 0.s V
(c) 20 mA (d) 25 rnA 91. If fbr a transistor. p .: zl9, then the ,,'alue o1-u is
86. A zener diode underqoes zener breakdown for an electric
(a) 1 (b) 0.4{)
freld o1'106 Virn at the clepletion region of width 2.5 pm
of a p-n junction. What is the reverse hiased potential fur (c') 0.9 8 (d) ls
the zener breakdou,n 'l 92. If rx : 60161 fbr a transistor, tlte value ol [} is
(a) [Link] (b) 2sV (fr,tIrT-CET, 2015)
(c) lsv (d) OsV (a) s0 (b) t,0
87. What is the current through the zener diode in the (c) I.s (d) 2
following circuit'J
93. In an npn transistor circuit. the emitter current is 10 mA.
ff 9A% of the ernitted electrons reac:h the collector then
ttre base current is
(a) 9 mA (t)) I nrA
(c) 2 mA (d) 8 mA
15 V
94. In a silicon transistor, a change tlf 7.89 rnA in the emitter
!, '. l0 v current. produces a change of 7.8 rnA in the collector
current, then the base cLtrrent must change by
(a) 0.e pA (b) 900 piA
(c) e0 pA (d) e pA
S e m ic' o tt tl ucto r D evic e s I0 t9
95. The transfer ratio F of a transistor is 50. The input 104. The difference in the working of a step up transformer
resistance ofthe transistor when used in common emitter and an amplifier is
configuration is 1000 Q. For an a.c. input voltage of 0.01 V
(a) the transformer decreases the power whereas the
the r,,alue of tlre collector a.c. current is
amplifier keeps the power constant
(a) 250 pA (b) 500 pA (b) the transformer increases the power but the amplifier
(c) 750 prA (d) e00 pA decreases the power
96. What is the voltage gain in a common ernitter amplifier (c) the amplifier increases the power but the trans{brmer
when the input resistance is 200 f) and the load resistanoe cannot increase the power
islKfJ?(0:50) (d) the amplifier decreases the power but the tran sfbrmer
(a) 100 (b) 150 keeps the power constant
(c) 20t) (d) Zsa 105. To obtain the current gain (B) ofatransistor" when it is in
97. A transistor corlnected in CE rnode, has a current gain of CE mode, we use
50. II'the load resistance is 5 K. input resistance is 1 K (a) its input characteristics
ancl the input peak voltage is 0.4 V then the peak output
(b) its current transfer characteristics
voltagr: will be
(a) 25 V (c) its output characteristics
(b) s0 v
(d) any orle of the above three characteristics
(c) 75 V (d) r00 v
106. The r.m.s. value ofthe base current ofa transistor is 10pA.
98. If /l^ . i, and l. are the widths ofemitter,, base and collector What is the current gain (P) if the peak value of the a.c.
regions o[a transistor, therr
collector current is 1.114 mA?
(a) -, 12- (b) [Link]
I
1
13
(a) s0 (b) 7s
(c) 13,, I t r" lz (d) lt: 12: 13
(c) 100 (d) t25
99.t In an n-p-n transistor amplifier, the collector current is 9 107. When a transistor amplifier having a voltage gain of 50 is
mA. If 90% of the electrons fi om the emitter reach the
n
collector. then given an input signal ofV,: 3 sin ( 100t * ), the output
(a) the base current is 10 rnA
,
3n
(b) thc emitter current is 1 mA signal is found to be Vn : 150 sin ( 100t *; ).

(c) r{__0.9and[}:9 The transistor is connected as

(d) (x,'= 0.99 and 0 : 99 (a) a common base amplifier
100. For a transistor, P - 50. To change the collector current (b) a common collector amplifier
by 350 prA, the base current should be changed by
(c) an oscillator
50)
(a) fl,:* ju^ ^

1u) (3so - 5o) pA

(d) a common emitter amplifier
108. The input signal given to a common enritter amplifrer is
(:so \
(c) (3s0 + 50) pA (d) jun 2 sin (10t * i). If the voltage gain is 50, then the outpr-rt
[, J
signal is represented by
If
101. The current gain in the CE mode of a transistor is 10.
the input impedance is l0 KQ and load resistance -
60 KQ, then the power gain will be
(a) 1 00 sin ( lot + +)
J
(a) 200 (b) 400 4n
(c) (d) 700 (b) 100 sin (10t +
600 T )

I 1 2n
102. For a transistor is equal to (c) 200 sin (10t +
I g T)
(a) h,\'o (b) three (d) 100 sin 10t + n)
(

(c) on e (d) zero 109. For a common emitter amplifier, the voltage gain is 40.
Its input and output impedances are 100 Q and 400 Q
103. What is the current gain for a transistor used as a common
respectively. The power gain ofthe C.E. amplifier will be
emitter arnplifier, ifthe current gain ofthe same transistor
used in comnlotl base mode is 0 .95 ? (AIPMT, 2007)
(a) 25 (b) 4e (a) 300 (b) 400
(c) l9 (d) 1s (c) 4s0 (d) s00
r a20 M arvel Physic s fuI H TLC ET

110" In a common base amplifier. the phase difference between 118. In a transistor in CE configuration, the ratio of power gain
the input signal voltage and output voltage is to v'oltage gain is
(AIEEE, 2005; AIPMT, 1990) B
(a) ct (b) ;
N
(a) Zero (b) : (c) []ct (d) I
+

7T
119. A common emitter transistor amplifier gives all output of
(c) 1 (d) 1r 3 V fbr an input of 0.01 V. P of the transistor is 100 and
the input resistance is 1 KQ. What is the collector
I11. A transistor has a current gain of 30. If its input resistance resistance ?
is 1 KQ and the clutput resistance is 5 KQ, then its voltage
gain rvill be
(a) I KQ (b) 3 KQ
(a) 120 (b) l s0 (c) 30 KQ (d) 30 KQ
120. The collector supply voltage is 6 V and the voltage drop
(c) 80 (d) 200
across a resistor of 600 Q in the coltrector circuit is 0.6 V
ll2. In a transistor amplifier, the collector cllrrent is 5.5 mA in a circuit of a transistor connected in common emitter
for an ernitter current of 5.6 mA. What is the current mode. What is the base current if the current gain is 20 ?
arnplif-rcation factor ofthe transistor ?
(a) 0.25 rnA (b) 0.0s mA
(a) 45 (b) 50
(d) 0.02 mA
(c) 0.12 mA
(c) 55 (d) 60
lz1. ln an n-p-n transistor,, ifthe doping in the base region is
I13. If three amplifiers each with again of 5 are connected in increased, then the collector current
series, then the overall amplification will be
(a) I)ecreases (b) Increases
(a) ls (b) r2s
(c) Rernain same (d) None of these
5
(c) ; (d) 2s [Link] a PNP transistor, N-type semiconductor is used as the
J
(a) collector only (b) base only
ll4. The current gain of a transistor in common base mode is
(d) collector or emitter
0.9q. What is the change in collector current if the emitter
(c) emitter on [y
current changes by 5 mA ? 123. The current gain of a transistor is I 00. Ifthe base current
(a) 0. mA
I95 (b) 4.95 mA changes by 200 !,tA, what is the change in collector
current?
(c) 3.25 rnA (d) 0.495 mA
(a) 0.2 mA (b) 20 mA
1 15. For a transistor amplifier, current gain -- 50, input and
output voltage signals are given by
(c) 2 nt{ (d) 200 mA
( l24"In a common base mode of a transistor, the collector
Vi -.=: 4 sin I l57t + n\I cllrrent is 5"488 rnA for an emitter current of 5.60 mA.
The valns of the hrase current amplification factor (p) r,vill
be @LEEE, 2A06)
v,, =: loorir(151t+ (a) sl (b) 48
+)
(c) 49 (d) s0
then tlte transistor is used as a
125. The current gain for a transistor [Link] as colnmon-base
(a) common base amplifier arnplifier is 0 .[Link] emitter current is 7. 2 tnA, then the
(b) colnmon emitter amplifier is
base current (AIIMS, 2001; AIPM|, 1996)
(c) coffulton collector amplifier (a) 0.39 mA (b) 0.43 mA
(d) ibed back amplifier (c) 0.35 nrA (d) 0.29 rnA
116. For a common emitter amplifier, input resistance (Ri) : 126. The part of a transistor rvhich is most heavily doped to
500Q and load resistance RL: 50000. If P : 60, then the produce large number of maiority carriers is the
voltage gain is
(a) emitter
(a) 60 (b) 600
(b) base
(c) 6 (d) r 00 (c) collector
ll7. In an n-p-n transistor, the collector current ts 24 mA. If
(d) can be any of the above three (,AIEEE 2002)
80'% o1'the electrons emitted by the emitter, reach the
collector. the base current in rnA is
(a) 36 mz\ (b) 26 mA
(c) l6 rnA (d) 6 mA
-r
Semiconductor Devices
127. An n-p-n transistor conducts when (AIPMT 2003) 134. A transistor is used in a colnmon emitter mode
amplifier. Then
1021

as an
(IIf)
l
I
i

(a) both the collector and the emitter are negative with
(a)
l

respect to the base the base emitter junction is reverse biased

(b) collector is positive and emitter is negative rvith (b) the collector base junction is forward biased
respect to the base (c) the input signed is connected in parallel rn ith the
(c) both the collector and the emitter are positive with voltage applied to the base emitter junction
respect to the base (d) the input signal is connected in series with tlre voltage
(d) collector is positive and emitter is at the same applied to the base emitter junction
potential as the base [35. In an n-p-n transistor, 200 electrons enter the emitter in
69 10-8 s. If loh electrons are lost in thebase, then the current
128. For a transistor, the current ratio 0d. : The current that enters the emitter and the current amplification factor
n are respectively
gain 96. is (MHT-CET,2AI5)
(a) 66 (b) 6l (a) )x10-10Aand49 (b) 1.6x10-leAancl 90
(c) 6e (d) 7l (c) 1.7 x 10-11 Aand 70 (d) 3.2 x 10-eAand99
136. A transistor is used in a common emitter amplifier circuit.
129. How many electrodes are there in a transistor ?
When a signal of 20 mV is added to the base emitter
(MHT-CgT,2007) voltage, the base current (16) changes by 20 pA and
(a) 2 (b) 3 collector current (I.) changes by2mA. The load resistance
is 5 KQ. What is the resistance gain ?
(c) 4 (d) s

130. In a PNP transistor, N-type semiconductor is used as the

(a) 1s (b) 20
(MHT-C87,2008)
(c) s (d) l0
(a) collector only (b) base only
137. a and P are the current gains in the CR and CE
configurations respectively of a transistor circuit. What is
(c) emitter only (d) collector or emitter
Pcr
the value of
frwhichoneofthefollowingiscorrect,aboutdopirrgina
transistor ? "B? (b)
(a) 2 1

(a) Emiuer is heavily dopped, collector is lightly dopped

and base in moderately dopped
(c) 0. s (d) 1.5

(b) Emitter is lightly dopped, collector is heavi ly dopped 138. In the following common emitter configuration an n-p-n
and base in moderately dopped transistor with current gain P - 100 is used. The output
voltage of the amplifier will be
(c) Emitter is heavily dopped, collector is moderately
dopped and base in lightly dopped
(d) Emitter is lightly dopped, collector is moderately
dopped and base in moderately dopped

lmV

132. For a transistor in common emitter configuration, the

voltage drop across the load of 1000 Q is 0.5 V. If the
(a) 10 mV (b) 0. I v
value of cx for the transistor is 0.98, then the base current (c) 1.0 V (d) l0 v
will be approximately equal to 139. A transistor is operated in common-emitter configuration
(a) 5 pA (b) 8 ttA at v. - 2 volt such that a change in the base current from
(c) pA (d) 15 pA 100 pA to 200 pA produces a change in the collector
10
current from 5 mAto 10 mA. What isthe current gain ?
133. The current gain ofan n-p-n transistor in common emitter
configuration is 100. What will be the change in the emitter
(a) 7s (b) 100
current, if the collector current changes by 1 mA? (c) 1s0 (d) s0 (AIPMT 200e)
(a) 1.00 mA (b) 0.e9 mA 140. In a common base circuit of a transistor,, current
(c) 1.01 mA (d) 1.5 mA amplification factor is 0.95. What is the emitter cttrrent if
the base current is 0.2 mA ? (MHT-CET, 2014)
(a) 2mA (b) 4 mA
(c) 6 mA (d) 8 mA
I 022

6. Logic Gates (a) OR gate (b) AND gate

(c) NAND gate (d) NOT gate
146. Which logic gate is represented by the following truth
table /

A B C

0 0 0
l4l. Which logic gate is represented by the following truth
0 1 I
table? (AIPMT, Iggt)
1 0 I
I
A B Y 1 1

0 0 0 (a) OR gate (b) AND gate

0 I 1
(c) NAND gate (d) NOR gate
1 0 1
147. The following logic gate synbol represents
I I I

(a) AND
(c) NAND
(b) oR
(d) NoR
.-j AIE

BL "
142. A NOR gate is ON only when all its inputs are
(a) an OR gate (b) a NOT gate
(a) ofr (b) oN (c) an AND gate (d) a NAND gate
(c) high (d) positive 148. The following logic symbol represents
143. Which one of the following truth table represents an ANI)
l.F
gate ?
Ir]. )o"''' o,
(a) an OR gate (b) A NOR gate
(c) A NAND gate (d) an AND gate
[Link] T + T is
(a) 2 (b) 0
(1) (2) (3)
(c) 1 (d) l0
(a) 1 (b) 3 150. If tr,vo inputs of a NAND gate are shorted, the resulting
(c) 2 (d) I gate is

144. The truth table of a logic gate is as follows : (a) an ORgate (b) an AND gate
(c) a NOT gate (d) NOR gate
A B Y
151. The logic gate circuit given below acts as
0 0 1

I 0 I

0 1 1

I I 0

to
It corresponds (AIPM|, 1998, 2001, 2002)
(a) OR gate (b) NOR gate (a) an OR gate (b) a NOT gate

(c) AND gate (d) NAND gate (c) an AND gate (d) a NAND gate

145. Wlrich logic gate is represented by the follorving truth 152. For which logic gate the fbllowing statemerrt is true ?

table ? (AIPMT, 2000) The output is low ifand only if all the inputs are high.

A B Y
(a) NANI) (b) NoR
0 0 0
(c) OR (d) AND
I 0 0
0 1 0
I 1 I
ar

Semiconductor Devices 1023

153. Name the operation performed bythe following switching (a) a.u (b) AB
circuit.
(c) A.B (d) A-rB
160. For which logic gate the tbllowing statement is true 'l
The output is lorv, if and onlyil'all inputs are low.

Bultr (a) ANI) (b) NoR

(c) NAND (d) oR
161. Which logic gate is realised by using p-n junction diodes
in the follorving diagram ?
(a) oR (b) AND Dt
(c) NAND (d) NoT
154. The truth table of a logic gate is a table
(a) giving only the true numbers
(b) rejecting only the wrong numbers
(c) input and output
iil[f;,i5i;,U?l*oJ,y"'the
(d) which gives all the possible input logic levels and (a) NAND gate (b) OR gate
the corresponding resultant logic levels in the output (c) AND gate (d) NOR gate
155. For a two input logic gate, the truth table has 4 possible [Link] the circuit below, A and B represent two inputs and C
input combinations. For a 3 input logic gate the number represents the outPut.
of combinations (entries) in the input side of the truth
table are A
(a) 4 (b) 6
(c) 8 (d) 10
156. The logic expression y : ABC is read as

(a) y is equal to A plus B Plus C

(b) y is equal to A or B or C The circuit represents
(c) y is equal to A and B and C (a) AND gate (b) NAND gate
(d) y is equal to A dot B dot C (c) OR gate (d) NOR gate
157. tdentif,, the togic gates marked as X and Y in the figure. 163. A researcher wants an alarm to sound when the
temperature of air in his controlled research chamber rises
A abclve 40'C or falls below ?OnC. The alarm can be
triggered by the outPut of
B
(a) an AND gate (b) a NAND gate

(a) NAND and NOT (b) AND and NOT (9) a NOT gate (d) an OR gate
(d) rr . t

(c) OR and NOT NOR and NOT -t64. What is the value of the output X in the fbllowing logic
-./

gate circuit ?
158. A NOR gate gives
(a) high output when both inputs are high
(b) high output when troth inputs are lor,v
(c) low output when both inputs are lor,v
(d) high output when one input is low and the other input
is high (a) X-A+B+A (b) X:A'(A+ B)
159. What is the output X ofthe following logic gate circuit ?
(c) X-A+(A'B) (d) x - ABC
165. How many NAND gates are required to form an AND
A (MHT-CET, 2010)
gate ?
(a) 2 (b) 3
(c) 4 (d) I
 I 024 Marvel Physics MHT-CET
166. What is the output Y of the following logic circuit? (b) only if both inputs are I

(c) if either or both inputs are I

A
(d) on [y if both inputs are zero
B 173. Which logic gate produces 'LOw' output when any of
the inputs is 'HIGH' ? (MHT-CET, 20lS)
(a) A.B (b) B .A
(a) AND (b) oR
(c) A+B (d) A+B (c) NAND (d) NoR
167. What is the output X of the following logic gate circuit? [Link] the output of two NAND gates is given to input of a
NAND gate. Then the truth table will be of
A
(MHT-CET,20I2)
B
(a) NOR gate (b) OR gate
C
(c) AND gate (d) XOR gate
D

(a) ABCD (b) AB+C+f)

(c) A+B+C+D (d) AB + CD
168. What is the output X of the following logic gate circuit? [Link] the following circuit, A and B represent two inputs and
t' C represents the output
A
A
B
C
A
C

(b) (A+El (A+c)

i
(a) (A+B)+(A+C)
The circuit represents (AIEEE, 2008)
(c) (A'B)+(A'C) (d) (A+B).(A+C)
(a) AND gate (b) NAND gate
169. What is the output X in the following logic gate circuit?
(c) NOR gate (d) OR gate
A 176. For a NAND gate the inputs and outputs for ditrerent time
intervals are given below.

Time interval Input A Input B Output Y

(a) Y-A+B (b) x-A.B tl to t2 0 1 P
(c) x--A+B (d) x-A+B t2 to t3 0 0 a
[Link] a chemical process, alarm systems are to be activated t"J+ to t^ 1 0 R
whenever either the pressure or the temperature in the t4 to ts I 1 S
reaction chamber exceeds certain limits. This is done by
using a logic gate whose inputs will be the voltages The values taken by P, Q, R, S are respectively
corresponding to the high temperature or high pressure in
the reaction chamber. Which logic gate should be used to
(a) 1,0, 1,1 (b) 1, 1, 1,0
activate the alarms ? (c) 0, 1,0, 1 (d) 0, 1,0,0
(a) AND gate (b) NAND gate 177. What is the output Y, when all three inputs are first high
(c) NOR gate and then low ?
(d) OR gate
171. In a two input logic gate, when one input is I and the
other is zero, the output is one. But even ifboth inputs are
zero, the output is one, the logic gate is
(a) an AND gate (b) a NAND gate
(c) a NOT gate (d) a NOR gate (a) 1. 0 (b) l, I
172. The output of OR gate is (ATPMT 2004)
1
(c) o, o (d) 0, 1

(a) if either input is zero

Semiconductor Devices ta25
178. In the following circuits, the output Y for alI possible inputs
A and B is expressed by the truth table,, gi.u'en in
(ATPMT 2007)
(4)'v,
(a) Figure (2) (b) Figure (3)
(a) A B Y (b) A B Y (c) Figure (4) (d) Figure ( 1)
0 0 I 0 0 I
I 181. A full wave rectifier circuit along with input and output
waves is as shown in the figure. QfT)
0 I 1 0 I 0

1 0 I 1 0 0

1 1 0 I I 0

Input
(c) A B Y (d) A B \,
0 0 0 0 0 0

0 I I 0 I 0

I 0 1 1 0 0 A.C.
Input 0ut
I I 1 1 1
1
put

179. The cornbination ofNAND gates shown in (1) and (2)

are equivalent to

A
t

The contribution in output from the diode D, is [half

cyclesl
(a) c (b) B, D
(c) A, B, C, D (d) A, B
182. Ap-n junction (D), shown in the figure can act as a rectifier.
An a.c. source (V) is connected in the circuit.

(a) OR gate and NOT gate D

(b) AND gate and OR gate ;)v R

(c) AND gate and NOT gate

(d) OR gate and AND gate The current I in the resistor (R) can be shown as

rl
(r)'Mr'e)'kt*
180. Which graph represents the temperature (T) dependence
of resistivity (p) of a semiconductor ?

(3)

L,(2):N, (a) Figure 4

(c) Figure 2
(b) Figure
(d) Figure
(AIEEE, 2009)
3

1
1026

183. In a p-n junction diode. a square input signal of 10V is (a) ANI)
Marvel Physics t[ HT:CET
(b) NoR
l
applied as shown in the figure. (c) OR (d) NAND
-['he
189. schematic symbol of light emitting diode is (l-ED).
lnput Output (MIIT:CEr,20t6)
Signal Signal
Anode Anode
pl
Which figure shows the output across R,- '? $,+ \'7x
(a),# -\,, f4\
(b)
;-r
11
I I
(1) (2) Catht-rdc C athodc

-,T1 Anode
pl
Anode
pl
(3)
,,]T (1)

(AIEEE, 2007)
(c) -'l y (d)$
(a) Figure 4 (b) Figure 3
Cathode Cathode
(c) Figr-rre 2 (d) Figure I
190. For a transistor, CI.. atrd 0u. are the current ratios, then

MCQS FROM PREVIOUS EXAMS

thevalueof
ffi is (MHT:CET, 2017)

(a) I (b) 1.s

184. When a hole is produced in a p-type semiconductor, there
(c) 2 (d) 2.s
is (HSC Board, Morch 2014) 191. Photodiode is a device (MHT-CET, 2017)
(a) an [Link] electron in the valence band (a) which is always operated in reverse bias
(b) an extra electron in the conduction band (b) r,vhich is always operated in floru'ard bias

(c) a missing electron in ttre valence band (c) in r,vhich photo current is independent of intensityof
incident radiation
(d) a missing electron in the conduction band
185. The colour of light ernitted by an LE,D depends uporl
(d) which may be clperated in forward or reverse bias

(a) its forward bias (HSC Board, Oct. 2014)

(b) its reverse bias
(c) the band gap of the material of the semiconductor
(d) its size 1. c 2'. c 3.c 4.a 5.c
6.d 7.a B.a g.d 10. d
186. In a semiconductor, acceptor impurity is
11. c 12. d 13. d 11. c 15. c
GISC Board, March 2015)
(a) Antimony (h) Indium 16. c l'7. c 18. c 19. b 2A. b

(c) Phosphorus (d) Arsenic 21. c 22. d 23. c 24. b 25. c

187. The width of the depletion region of a p-n junction diode 26. c 27. c 29. d 29. b 30. d
is (HSC Board, Oct. 2013) 31. c 32. b 33. d 34. d 35. b
(a) 0.5 nm to I nm (b) 5 nm to 10 nm 36. b 37. c 38. a 39. b 40. b
(c) 50 nm to 500 nm (d) 500 nrn to 1000 nm 41. d 42. b 43. a 44. c 45. b
188. Which logic gate corresponds to the truth table given 46. b 47. c 48. a 49. d 50. b
below ? (HSC Board, Feb. 2016)
53. b 54. d 55. b
51. c 52. d
A B Y 56. c 57. d 58. b 59" c 60. b
0 0 1 61. a 62. a 63. a 64. d 65. c

0 I 0 66. c 67. d 68. b 69. c 70. c

I 0 0 71" d 72. b 73. c 74.b 75. b

I 1 0
Semiconductor Devices 1027
9. (d)
76. d 77. d 78. c 79. b 80. b
81. c 82. c 93. b 94. d 85. b E,O : ,hc
NV-:
6.63x 10-34 x 3 x 108
2500 x 10-e x 1"6 x 10-le
b
),
86. b 87. d 98. b 89. c 90. c
91. c 92. b 93. b 94. c 95. b :: 6.63 x 3 0.5 eV
96. d 97. d 98. c 99. c I00. d 25 x 1.6
101. c 102. c 103. c 104. c 105. b
10. (d) The material is a p-tlpe semiconductor because in
the valerrce band, holes are the majority charge carriers.
106. c 107. d 108. b 109. b 110. a
11. (c) At OK, ifthe same P.D. is applied across an insulator
111. b ll2. c 113. b ll4. b 115. b or a semiconductor the current is zero. (The semiconductor
116. b ll7. d 118. d 119. b 120. b also becornes a perfect insulator at OK.) Similarly, in the
reverse biased p-n junction diode, a small current flows
l2l. a 122. b 123. b 124. c 125. d
due to minority charge carriers.
126. a 727.b 128. c 129. b 130. b
Thus (a), (b), (d) are correct.
131. c 132. c 133. c 134. d 135. d
But (c) is wrong because at OK, a conductor becomes a
136. c 137. b 138. c 139. d 140. b super conductor and the current in it is very large (infinite).
141. b 142. a 143. c 144. d 145. b 12. (d) In the p-qpe semiconductoq the holes are the majority
146. a 147.b 148. b 1.19. b 150. c charge carriers. Inside the conducting wire, free electrons
are the charge carriers while in a battery (cell), ions are
151. b 152. a 153. b 154. d 155. c
the charge carriers. Thus the correct sequence is holes,
156. c 157. b 158. b 159. b 160. d electrons, ions.
161. b 162. c tr63. d 164.b 165. a 13. (d) The p-n junction is reversed biased in the second
166. a 167. c 168. d 169. d 170. d case.

l7l. b 172. c 173. d 174. b 175. d 14. (c) For silicon, the barrier P.D. - 0.6 V
179. d .'. P.D" across R - 3 - 0.6 : 2.4Y
176. b 177. d 178. c 180. b
181. b 182. b 183. c 184. c 185. c 15. (c) The barrier P.D. 0.3V or 0.6V across the diode remains
constant.
186. b 187. d 188. b 189. b 190. a
16. (c)
191. a
ot _ 1'2 x 103
Rf - AV _' - - 3oog2
AI 4x10-3 4

l'l . (c)
18. (c)

1. (c) Carbon. silicon and gerrnanium all are semiconductors 19. (b) For forward biasing the p-side should be at a higher
and (E*)r, = (Eg)c.. potential than the N-side. This is found in (2) where
But (Eg)c is very high and (Ee)c , (Eg)si , (Ee)c.. 0>-2.
, 20. (b)
.'. (Ee)c (Ee)s, is the correct choice.
) 21. (c)
F. (c)
(c) 0.3
3.
22. (d)R1 -AV- -200Q
4. (a) Since the hole density is more than the electron AI 1.5 x 10-3
density,, it is p-rype semiconductor. 23. (c)
-
3" (c) Only in intrinsic semiconductors, the conductivity 24. (b)
is due to the breaking of covalent bonds. But in extrinsic 25. (c)
semiconductors in addition to brenking of covalent bonds.
the acceptor and donor impurities are used to increase the 26. (c)
conductivity. 27. (c)
6. (d) is wrong because at absolute zero temperature it 28. (d)
behaves like an insulator and not as a conductor.
29. (b) Ifa p-n junction is reverse biased, the depletion region
7. (a) increases.
8. (o)
 YI
1028 tI nrvel Physics MHT:CET
30. (d) No current florn's through Dz. 42" (b) In an unbiased p-n junction, there is only the internal
barrier potential, in which n side is at a higher potential
.'. Resistance (R') between A and C is given by
and p side is at a lower potential.
llll -T-
t_
43. (a) The diode is reverse biased. No current flows in the
4123R' circuit.
Rt:3 "'. P.D. of 6 V acts across only the diode or between the
.'. Total resistancebetr,veenAandB- 3+7 - l0Q points A and B.

31. (c) 44. (c)

0"5 v
E dV -- Edx =: 105 x 10-5 : lV
0.1 A
32. (b)
a
dv dv 0.5
E,- E
dx E ros
33. (d) The potential barrier is decreased ifthe temperature
I'he voltage of the source - P.D. across the diode + IR
is increased. Hence it can be 0.5 V. It cannot be 0.7 V 0.8 -0.5 r0. 1 x2A-2.5V
Vor 1V. I
AV 106
34. (d) Current is zero as theiunction diode is reverse biased. 45. (b) R= = 2 x 106 fl
AI 0.5 x 1-r' 112
35. (b) When the p-end of the p-n junction is connected to 46. (h) It does not depencl upon the diode design.
the negative terrninal and n-end to the *ve terminal of a
battery, the p-n junction becomes reverse biased. Its 47. (c)
resistance becomes very large. Thus it behaves like a 48. (a) For a full rvave rectifier,
capacitor whose trvo conducting plates are separated by
Ripple frequencl' - 2 x input frequency
an in sulator.

36. (b) To get smooth d.c. output fi"om a rectifier circuit -2x 50:100H2
(both half wave or full wave), a filter circuit is used. The 49. (d)
output contains both a.c. and d.c. components. The filter 50. (b) The barrier potential of a p-n junction depends upon
circuit removes the a.c. component. (i), (ii ) and (iii).
37. (c) The resistance of an ideal diode is zero and the 51. (c)
potential on the n side is more negative than that of the p-
side. 52. (d) 50 output pulses.

.'. D is forward biased with net e.m.f- - [-1 - (-3)] :2Y dV 5x l0_t '

53. (b) E = 5 x los V/m

2 dx I 0-6
.'. J - 100 - 0.2 A: 20 mA
54. (d)
38. (a) Potential on the p-side : 4Y 53. (b)
Potential on the n-side _- --1 V 50. (c)D is forward biased. The equivalent resistance of 10
.'. The diode is reverse biased and hence for the flow of KQ and l0 KQ is 5 KQ.
current resistance is infinity. Net resistance across XY is 5 I(2 (Parallel Resistances)
.'. I :0
39. (b) Depletion region is formed due to the diftirsion of
.'. [- 'o
(5 + 5) x 103
= -: 3 x t0-3rt_- 3mA
electrons from n to p region and ofholes from p region to
n region.
57. (d) When the p-n junction is reversed biased, the width
clf the depletion region becomes very large and hence the
40. (b) In this case, V - 5 V. The diode is forward biased.
T VI
Net resistance: 10 f) + 25 Q: 35 Q electric field = becomes very small.
Lt Tj
.T
r -
v51 t-A.
= =
R 35 7 In tbrward bias, E == +dx is very large.
(No current in reverse bias.)
58. (b) For series combination of cells, we join them as
41. (d) When it is forward biased, barrier potential Vn as Ifthev are joined like -{ l;{
well as the width (x) of the depletion region are decreased.
{ H F to increase ttre e.m.f L-,
p-n junction is treated like
theri the net e.m.f" will be zero.
a cell and hence the correct connection are shown in
figures (2) and (3) p-n-p-n or n-p-n-p but p-n-n-p shown
in circuit (l) is rvrong.
Semiconductor Devices I 029

59. (c) is correct. The electric field at the p-n junction is .'. X becomes an n-type germanium semiconductor.
r{h Indium is trivalent hence Y becomes a p-type Ge
directed from n-t11:e to p-t1pe side.

60. (b) In a half wave rectifier,, the d"c.

ffi
)mponent of the
semiconductor.
n and p are connected to the positive and negative
10 terminals of the cell respectively. Hence it is a reversed
output voltage is given by Vd... : biased p-n junction.
+ 1T

61. (a) For reverse biasing of a diode. the p-side of the 65. (c) No current will flow through Dz because it is reverse
junction diode should be at a lor,ver potential than the n biased. The diodes are assumed to be ideal and hence
side. For diodes in the frgures ( I ), (3) and (4). P side is at diode resistances are zero.
a higher potential. Hence they are forward biased. For T'he equivalent circuit is shown below.
diode in fig. (2) n side is at + 5V while P sicie is at zero
potential. Dt
CI
Diode in fig. (2) is reverse biased.
62. (a) Di 20fl-
rnA

The equivalent resistances ofparallel resistances of 20 f)

The value of R remains constant. But D conducts when it and(5+5:l0A)is
is forward biased but whett it is reverse biased it does not
2oxlo = 2oo = 20
conduct. R_ =
,-Lr zo + 10 30 3
a
In the given problem, the current florvs in both the cases
.'. The current through the batterv
i.e. D and R are not in series otherwise the current would
have been zero in one case. Hence D and R are joined in 10V 10 x 3
parallel. 2013 20
I : 25 mA corresponds to reverse biasing of R and D 66. (c) V: 100 sin (3 14 t)
In that case, the current flou's only through R. In this case, Vo : 100 V
V In the half wave rectifier, the value of d.c. voltage in one
R= = = 40Q cycle is given by
I 25 x l0-3
But when D is fonvard biased, it has a small resistance vo log=31.85v+32Y
and as D and R are in parallel, their combined resistance,
vu. -- =
Tr 3.14
IV
Rp=-=20Q 67 . (d) (a),'(b), (c) is wrong. (d) is the correct statement.
50 x l0-' e.g. For Ge,, dV : 0.3 V and dx - 10-6 m

tIL]
L 20 40 40_ dx 10-o
-o'3 x 106-3 x losv/m
Thus R - 40 f) and Forward resistance - 40 f) Thus a strong electric field is produced.
63. (a) Current will flow in (2), (3) and (4) because in (2), Note : At the middle of the depletion region, the electric
the diodes are in series and are forward biased. ln (3). field is very large if it is forward biased. But it becomes
theyare in parallel but orle is fcrrward biased and the other very small, in reverse bias.
is reversed biased. Hence r1o current rvill flow in that diode
but the current flows through the other diode. In (a) both
t dv , . _ -,-l
ofthem are inparallel and forwardbiased. But in Fig. (1) Ldxl
they are in series but first diode is reverse biased. Hence 68. (b) In the given circuit, the diode D, is forward biased
no current will flow. while the diod eDzis reverse biased. No current will flow
64. (d) through Dz because it has infinite backward resistance.
.'. As D, has a forward resistance of 50 Q, the total series
resistance in the circuit (R')
:50f)+150Q+100Q-300o
Arsenic is pentavalent.
I 030 Marvel Physics MHT_CET
V
.'.CurrentI-
R = 300 -0.02A
.'. The current through 100 f) resistance - 0.02 A Rr-500fJ
69. (c) For an ideal junction diode, the forward resistance is
zero and hence there is no voltage drop across it, when it
15 V
rov *r
is forward biased. Hence voltage across R is V. Option Y r.,. l0 v
(c). But in reverse biasing it does not conduct. It has infinite
resistance.

y;r,::ge
across the diode is V and voltage across R is
.'.r*r=#=*^
70. (c)
71. (d) and current through Rl : 5t _
500 100 ^
72. (b) 1 I
73. (c) Zenercurrent,l., z = 1oo r5o= 3oo'^
'o
74. (b)
.r lr: I
x 1000 mA - 3.33 mA
75. (b) 300
76. (d) Band gap Ee -hv -2eY -2x 1.6x 10-leJ 88. (b)
.'. The minimum frequency is given by hr*i, - 2 eY 89. (c)
2x I.6 x 10-le 3.2 x l0-r9 Voltage gain
output voltage
"'
V rnin = 90. (c) - input voltage
h 6.6 x 10-34
+0.5x10+15-5x 1o+ta 11, Vo:Vi tA-20x l0-3 x 100:2Y
77. (d)
st. (c) P- * 4s-
78. (c) Zener diode was used as a voltage regulator. *
79. (b) Vo : Y r:8 Volt 49
49:5ou u :=
; -
o.9g
80. (b) Zener voltage : 40 V
40 gz. (b) P -
cx' := 6016l 60 6t
IL - l-cx l-60 161-
\u
2\ 60
t6 x 103
6l I

81. (c)
93. (b) IE:1OmA 16' - # x l0 - g mA
82. (c)
83. (b) [u:lE--[C: lmA
.'.

E4. (d) An LED is always used in forward biased condition. 94. (c) AIn : AIr, - : (7.89 - 7 .8) mA - 0.09 mA
^1.
1s0 s0 -9x 10-2mA-9x 10-2x 103pA-90pA
85. (b) I _ 95. (b)
5 x 103
Loadcurrent:5mA .'. Zener currentlr: 15 mA r _ vi
rb 0.01
0.01 x t0-34- 0.01mA
dV & rooo
86. (b) E- d. I.:9lu:50x0.01 : 0.5 mA - 500 pA
96. (d)
Vx
... dV: Edx: 106 2.5 x 10-6 loog
Voltage gain Av :BRn
,Ri - 50 x - 250
.'. dV : 2.5 Y 200

.'. Breakdown voltage - 2.5 V 5 x 103

87. (d) 97.(d)Av-P+-50x
Y I
R;
----.....'........,.-
I x l0'
-*'w

P.D. across R2 : Y r: l0 V .'. Vo : 250 " Vi : 250 x 0.4

.'. P.D. across Rt : 15 - l0:5 V Vo:100V
98. (c)
Semiconductor Devices 1031
()0 10 ll3. (b) A: Ar * Az * A: : 125
99. (d) lc - IF - x9 := 10 mA ]
*,u g tt4. (b)
and Ib-lE- Ic: lnrA AIc
cx-- AIc.-crx AIE,:0.99 x 5:4.95 mA
': Ic =: 0.9 and
.'. .,,
IE
P:f --o
0.9
0. I
.)

115. (b) ^r,

There is a current gain and phase dilference of n
between Vi and Vo.
AIc
lAA. @) [J .= 50 ==
tt6. (b) voltage gain
:= P+
' Ri - 60 x ry
500
- 600
AL. (:SO \
.'.AI n- tj, '-t,50,j u^ ll7. (d) Ic: : 24 mA

60 24- JL 1u IF : 24 x 100:30mA ^

' Ri - ro x
:=
101 .(c) Av BRn
::= 60 80
lo
' rrB -30
-- -21 -.6mA
Porver gain -= Voltage gain x Curreltt gain
ll8. (d) P- V x I
:AVxp:60x l0:600
Porver gain - Voltage gain x Current gain

laz. P.G.
@) l-u u p tx cx, : Current gain - P
"' \r.,.
I- l+ ct .=.
1
- I

llg. (b) voltage gain = =

1

_)/-
(},
+ l0
la3. @) cx :: 0.95 p' : .L 95 :: 19
1 c{ - 0.05 Current gain - p: 100: Flg
l$4. (c)
105" (h) Resistance gain
106. (c) Peak value of I. - 1414 rnA
c.G. 100

RC

& '=3orRc:lx
[Link] 16- : ry irnA 3:3Kel
- .ta

J; 120. (b) Collector current,

p =: Ic -- 'o-' - :100 Collector voltage 0'6

lB 10 x 10-6
IC = = = to-3A = 1mA
Resistance 600
107. (d) There is a phase difibreltce of n between Vi and Vu in Ic
.,B = =
a CE anrplifier. and 20
IB
108. (b) For output signal Vo: 50 x 2 and phase is
IB = lq- = + = [Link]
(10t +
TT

;3 + Ir) p20
l2l. (a) For affansistor, i.: io + i. i.: i. - Iu
4n
.'. Output signal is 100 sin 10t + ( ; ) Ifthe doping in the base region is increased, then the base
current (f / also increases. Hence I. will decrease.
400
109. (b) 10 : Current gain x 122. (b)
00
(b) Ic : 0 Ie -- 2A mA
1
123.
.'. Current gain - l0
124. (c) For a common base transistor amplifier,
.'. Power gain - Voltage gain x Current gain : 400
Ic 5'4BB
110. (a) cr= = =0.9g
IE 5.60
1ll. (b) Voltage gain - Current gain x Resistance gain
B= ct o'98 49
=: 30 X : := 150 '1ct10.98= =
1

:= Ic := Ic ::= 5'5
IF- IB 5.6 5.5 -
55
ll2. (c)
IB
 -'l
t032 M arvel Ph1,5ics MHT-CET
125. (d) We consider current gain, cr for a common base
amplifier. rc = 3r,
100
and the current amplification factor
IF 7.2
rC, 0.99 IF
. rc,I :7.2x0.96:6.9lmA ' Is 0.0llE
The base current IB : IC - IE: 7.2 -6.91 :0.29 mA (c) x
136. AV* r,-:20 mV - 20 1()-3 V, R - 5 x 103 e)
126. (a)
2 x l0-3
127 . (b) or the proper tunctioning of an n-p-n transistor, E-
F
B junction is fbrrvard biased and C-B junction is reverse
13=ffi= 20 x 10-6
100

biased.
[Link]
For this the emitter is connected to the -ve terminal and Voltage gain =5
vi AVBI,
the base should be connected to the +ve terminal of the
battery and the collector should be connected to the tve 2x l0-3 x 5 x 103
terminal of the battery. = 500
20 x I0-3
Thus (b) is the correct option.
Voltage gain
69 69 Resistance gain =
Current gain
==s00
100

^cr 1-CI
128.(c) P .69
70
= 70
I
/
=o9
137. (b) ti =
CI

I_ l-cr
70 ?o
129. (h) prx CT

l3A. (b)
l-tx
131 . (c)
cx C[+c[-) ')
a'
l--cr l-cr
n [Link] gg
132. (c) 49
'10.992
L'

and u[3
1-u 1-cr
lc -v-0.5_
R 1000 5xlO-aA
/\t I

Ic' up [,] o.) o2 )

... fl - TB 138. (c) Output voltage - Input voltage (V;) x Voltage gain
.'. Vo: Vi x (Current gain) * (Resistance gain) ... ( 1)
Ia_ 5 x 10-a 500 x 10-6
IB := - - - l0 pA
p4e 49 Currentgain-p:100.,

AIc 10 x 103
(c) 0u. - - AIs Resistance gain - I x 103 :10
133.
ffi AIc
and Vi : l0-3 V= I mV
100 =: 1

AIp I From (1), " 100 x l0:

Vo: l0-3 1 V
139. (d) vcE, -2 andAlr, - (200 - 100) - 100 pA
AIE l- 1
100
- 0.01 A[. - (10 - 5) - 5 rnA
AI.-1+0.01 :1.01 mA We use the formula for p as

134. (d)
0u.
: Inr. ) at constant Vc.u.
135. (d) Let Iu be the emitter current. l, ,
^t,
dq 200 x 1.6 x 10-le 5 x 10-3
Then, IE,:
A = -3.2x l0-eA ...p: -5x10-3+4-50
I 0-8
Since lo/o electrons are lost in the base, IC
140. (b) fr - 0.95 : ,, and IE : Ic, - Iu .'. Ic:IE+IB
Ip -
99
IeL
.'. Base current (IB) - ffi and the remaining
100 Ic : 0.951E
rvill enter the collector.
Thus IE - Ir] : 0.9518
Semiconductor Devices
.'. le

.'. IEI

50IE
(l -
( 5\
*]
: rOO
0.95) ----IB

=
2
rt*^ (-""signneglected)

.'. ru == 4 mA
165.

166.
(a) 2 NAND gates are required to form an AND
The output of a NAND gate is inverted by
get art AND gate.
(a) For the AND gate,, the inputs ut. A
l{enceY-A.B
a

and B.
NOT gate to
103 3

gate.
l
t4t. (h)
142. (a) 167. (c) A1l are OR gates. .'. Yl : A + B

143. (c) Y2=A+B+C, x-A+B-rC+D

144. (d) 168. (d) The outpttts ofthe OR gates A + B anct A + C, beconre
the inputs for the AND gate.
145. (h)
Y-(A+B).(A+C)
146. (a)
147. (b)
169. (d) For the OR gate,the inputs are f and B.

118. (h) .'.X:=:A+B

149. (b) 170. (d)

150. (c) 17 l. (b)

l5l . (h) 172. (c)

152. (a) 173. (d)

153" (b) 17 4. (b)

154. (d) 17 5. (d) This represents an OR gate because the outpttt C r,vill
be ON, when either A or B or A and B are forward biased.
155. (c) The nuntber of input combinations fur an N-input
truth table is 2N.
17 6. (b) The truth table of the NAND gate is given as

-+
e.g. far2inputs,they are22-4 for3 inputs,N-3 and
Input A Input B Af{D output NAND AB
there are 23: 8 input cclmbinations. AB Y (output)
156. (c) 0 t 0 I P

157. (b) 0 0 0 I a
158. (b) I 0 0 I R
159. (b) For the two NOT gates, inputs are A and B and the I I 1 0 S
outputs are A anrj B . A and B are the [Link] of the
AND gate. .'. The values of P, Q, R, S are ( I ., l, I , 0).
177. (d) X, is an AND gate and Xzis a NAND gate.
.'. OutPut X = AU
A- l, B : 1 and C :
In the first case, when 1

60. (d)
then fbr the AND gate Y' : 1 and for the NAND
1
gate the
161. (b) [t represents an OR gate because we get the output inputs are 1, 1. .'. Output Y - 0
by using either diode D, or diode D" orboth D, and Dr.
ANI}
162. (c) The circuit represents an OR gate. NAND
Both diodes are forward biased.
: 1, C : X,
.'o For A -= 0, B I
C
orA-= 1,8-0,C:1
orA:1,8-l,C:1 In the second case when A: 0, B-0andC:0
orA:0,B-0,C:0 For the AND gate, Y' - 0 and for the NAND gate, the
inputs are 0, 0.
163. (d) The alarm catl be triggered by the output of an OR
gate. Output Y : 1.

For both the temperatures above 40'C and below 20'C. 178. (c)
_}
164. (b) The output of the OR gate is A + B. For the ANI)
gate, the inputs are A and A + B.
.'. OutputX-_A(A+B)
tY
Flere both (1) and (2\ are NOR gates.
 I

103 4 Marvel Physics MHT-CET

For gate I, output - A+U 184. (c) The absence of an electron in the valence band of a
semiconductor is called a hole.
This acts as input for gate (2).
185. (c)
The final output is
186. (b) When a pure Ge crystal is doped u,ith a trivalent
Y=A+B=A+B impurity like indiuffi, we get a p-type semiconductor. The
This is the Boolean expression of OR gate.
indium impurity accepts the electrons from Ge, hence it
is called acceptor impurity.
Thus the circuit acts as an OR gate and its truth table is
187. (d) The width of the depletion region in an unbiased p-n
A B Y junction ranges frorn 0.5 trrrn to I pm. 1 pm - 103 nm

0 0 0
I prn : 10*6 m and I nm : 10-e m].
.'. The width varies betr,veen 500 nm to 1000 nm.
0 I I
188. (b) The truth table corresponds to a NOR gate. It has an
I 0 I
output one only when all inputs are zero.
1 I I
189. (b) A light ernitting diode is represented by the symbol
This is given in (c). given in (b).(a) is a photodiode, (c) is a junction diode
and (d) is a zener diode.
179. (d) (l) Represents the OR gate
190. (s) For the transistor
and (2) Represents the AND gate
180. (b) When the temperature is increased, the conductivity 0,1.
04. =
of a semiconductor is increased and its resistivity is 1-ud.
decreased exponentially. This is shown in figure (3) or
option (b). l- *.ic =
181 . (b) Ef ... ( I )

182. (b) The input wave is shown in the figure.

0a.
(, b)
V t Fa.J
00.00.

od.
From 0 to T 12, the diode is forward biased and the current [J4.
flows through R. From T 12 to T the diode is reverse biased 0d.
and no current will flow through R. l{ence we get d.c.
pulses as shown in figure (3). 1- (1 c{a.)
0cI.
... tiom (l)
The given circuit is of a half wave rectifier.
183. (c) This is a half wave rectifier. The current will flow 0d. r
when it is forward biased in the first half and when V - _t

cx'41:
+5V. No current will flow in the second half, when V - -
5V as the diode is reverse biased. .'. The output across 191 . (a) Photodiode is a device which is always operated in
R, will be +5V as shown in figure (2). reverse bias.
S emic ond ucto r D et, ic e s 103 5
l
1. A semiconductor having an electron concentration 7. The most commonly used semiconducting material used
(density) of 8 x 1013 per nretre cube and hole concelttration to prepare a solar cell is
of 4.5 x l0l2 per metre cube is (a) Gallium arsenide (b) Indium arsenide
(a) a p-tlpe semiconductor (c) Cadmium arsenide (d) Silicon
(b) an n-t1pe semiconductor 8. A p-n photodiode is fabricated from a semiconductor with
(c) an intrinsic semiconductor a band gap of 2.5 eV. It can detect a signal ofwavelength

(d) a p-n junction (AIPMT,2009)

,,
LC When arsenic is added as an impurity to silicon,, the (a) 6000 A (b) 6000 nmn
resulting rnaterial is (AIPMT 1996) (c) 4000 nm (d) 4000 A
(a) an n-type semiconductor g. What is the current flowing through 1 KQ resistor in the
(b) a p-type semiconductor lollowing circuit ?

(c) insulator
(d) good conductor
3. [n a p-n iunction, the thickness of the depletion layer is
10-6 m. If the potential difference across it is 0.2 U then 10v IKCI
the electric field set up across theiunction is
(a) 106 V/m (b) )xl0s\,/m
(c) 10-6 V/m (d) l0s Vlm (a) 2 rnA (b) 3 mA

4. What is the current in the following junction diode circuit? (c) 4 mA (d) 5 mA

*2V 5V 10. Foratransistor,B:50. Input resistance (Ri) : 200f).

Outpr"rt resistance (Rn) : 20000. The voltage gain of the
() t{ amplifier is
500 P
(a) 300 (b) s00
(a) 10-1 A (b) l o-2 A
(c) 100 (d) 600
(c) J x 10-3A (d) Zero
11. A transistor is used in common etnitter configuration. lf
5. A p-n junction diode has a forward bias resistance of o: - 0.9, then the change in the collector cllrrent when the
I0 O and a reverse bias resistance of 1 0 kQ. It is connected base current changes by 2 PA is
in series with a resistance of 990 Q and a.d.c. source of
5V in such way that the negative terminal of the source
a
(a) 3 p$ (b) e ptA

is connected to the n region of the p-n junction. What is (c) 18 pA (d) 30 pA

the current flowing in the circuit ? 12. If the current gain in CB configuration is 0.96, then the
(a) 10 mA (b) 5 mA current gain in the CE configuration will be
(c) 2.5 mA (d) 12.5 mA (a) 24 (b) 2{J
6. Two ideal junction diodet D r and f). are connected in the (c) 16 (d) t2 (ATPMT 2002)
circuit as shown in the figure. What is the current flou'ing 13. For a transistor the parameter S -_ 99. The value of
in the circuit'/ (AIEEE, 2006)
parumeter cr is
?a (a) 1 (b) 0.e
(c) [Link] (d) e.e
Dz 14. A gate has the following truth table :

10v 0 0
P 1 1
3o
a 1 0 1 0

R 1 0 0 0

(a) 2A (b) l.s A This truth table is for (AIPMT,2002)

(c) 3.3 A (d) 1.1 A (a) a NOR gate (b) an OR gate
(c) a NAND gate (d) an AND gate
r036 M u rve I Phvsics M II T-CET

(d) This is a zener diode circuit. Zener voltage :

-l I

15. The following truth table belongs to w'hich ofthe fblkrwing 9. 5 V.

four gates ? (AIPMT 1997) Zener diode is used as a voltage regulator.
.'. Voltage across I Kfi resistance -- 5 V
Input Output
A B l' 5
5 x 10-3 -. 5 rnA
.'. I - --
i0' -
I I 0
Ro
I 0 0
10. (h) Voltage gain =- [3 =: 50 X 2000 =: 500
0 I 0 Ri 200
0 0 I AIc
D
(b) N,{ND
ll. '
U
,\lu
(a) ANI)
(c) OR (d) NOR := ltt pA
() cr 0.96 96 1
12.
4
(o) '.,J k-T

I cx l-0.96 ,4

ANSWERS tJ =-- ee
C/-- r- := 0.99
13. (c)
I +
l.b 2.a 3.b 4.d 5.b
0 100

14. (d) The truth table of'the gate is rvritten as

6.a 7.d 8"d 9.d l0.b
11. c 12. a 13. c 74. d 15. d P a R
I I I

1 0 0

0 I 0
0 0 0
l. (h)
ThuswefindthatR-_ I onlywhen P-_ landQ: i.
2" (a)
.'. This shows that it represents an AND gate.
3. (b)E'=;:#:=a2x106 15. (d) The given truth table is of' NOR gate. IOR gate
fbllorved by a NOT gate]. It has an output l, only when
E -2x lOsV/m all inputs are zero.
4. (d) No current will flow as the junction diode is reverse
biased.
\ (b) Diode is lbrward biased.

R+Rf 99tt +10

6. (a) Dl is reserve biased and Dz is fclru,'ard biased.

lrorL)z,R:g. I +=2.A
2+3
7. (d)
8. (d) Bancl gap - E* -2j eV '-=2.5 x 1.6 x 10-le J

- 4x10-le'l
hc
[Jut [ '= hv-_ T-
L
=.1x10-l9J

hc 6.6 x 10-31 x 3 x 108

t\ -. + i x 10-7 m
E 4 x 10-1e
- s000 A
This is the threshold wavc'length.
It can detect a signal ofwavelength (t)< 5000 A. Out
of'the lcrur given wavelengths, the onlv wavelength which
is less than 5000 A is 4000 A.