13 CONSTRUCTION DETAILS OF SCR SCR is one of the most important types of power semiconductor devices. It is a four layer, three p-n junctions and three terminal (Anode, Cathode and Gate) device. Fig. 1.2(a) shows the general construction of a SCR. The three junctions J, dg and Jz are formed from the four layers of alternate p-type and n-type silicon semiconductors. The threaded portion is provided for the purpose of tightening the thyristor to the frame or heat sink with the help of a nut. Gate terminal is kept near the cathode terminal. ‘WARWING “XEROX PHOTOCOPYING OF THIS BOOKISILLEGAL1.3. CONSTRUCTION DETAILS OF SCR SCR is one of the most important types of power semiconductor devices. It is a four layer, three p-n junctions and three terminal (Anode, Cathode and Gate) device. Fig, 1.2(a) shows the general construction of a SCR. The three junctions J1, Jgand J3 are formed from the four layers of alternate p-type and n-type silicon semiconductors. The threaded portion is provided for the purpose of tightening the thyristor to the frame or heat sink with the help of a nut. Gate terminal is kept near the cathode terminal. ‘WARMING 2 XEROX / PHOTOCOPYING OF THIS BOOK IS ILLEGAL1.4 rminat welded a i Cathode - oP reeion Cathode {e) Circuit symbol (b) Schematic diagram of @ thyristor FIG 1.2: nected to outer p-reg) nee cathode (K) and terminal connected to in (a) Constructional details ) the terminal con! jon is called anode (A), d to outer n-regio gate (G). From Fig. 1.2 (b terminal connecte p-region called the lid state devices. TI for SCR. As the SCRs are soli f these features SC loss. Because ©} controlled devices ymbol used reliability and have low I ployed for all high powe s the low value of curr ie., it block he gate. But by proper triggering the g signal between gate and cathode terminal) the SCR de to cathode. Hence, the SCR is used as a “controll ions such as rectification, inversion and regulation Fig. 1.2 (c) shows the s are compact, posses high are almost universally em rectional device” 1 it is triggered by # ent fr The SCR is an “unidi Anode to Cathode until (ie., by proper gate t from ano’ rious functi terminal conduct the current switch” to perform va power flow. WORKING OF ‘SCR (USING TWO-TRANSISTOR ANALOGY) eo with the use of two-trans! Fe Pesta) shows the schematic diagram of a thyristor. The two-transis| Fig. fned by bisecting the two middle layers, shown in Fig, as a doted line cormroted in two halves as shown in Fig. 1.3 (b). * istor mod tor mode andi From the Fig. 1.3 (b), the junctions J; ~ Jz and Jz — Ja can be considered as PNP © ‘PNP and NPN transistor respectively. The circu ircuit represen ‘ Nansistor is as shown in Fig. 1.3 (c) representation of thyristor using ARWING ? XEROX | PHOTOCOPYING OF THiS BOOK IS ILLEGAL| ctl ear TI Power Llechonic Dervices [. {a) Schematic {b) Two-Transistor Model (c) Two-Transistor Model FIG 4.3 : Thyristor During the OFF-state of a transistor, the collector current Ic and emitter current Ig is represented as Ie = ale + leno Whete a is the common base current gain Icgo is the common base leakage current of collector base junction, Similarly, For transistor Q1, The emitter current, Ig = Anode Current Iq and Ic = Ic,, Therefore, Ie, = 41 Ja + Ico, m Where ay is the common base current gain of Q1. 'cBo, is the common base leakage current of Qi. For transistor Qo, : Tey = 2 Ie +Ica0, Where, ay is the common base current gain of Qo. ceo, is the common base leakage current of Qz. WARNING : XEROX J PHOTOCOPYING OF THIS BOOK IS ILLEGALall ERG tran is the emitter current of Qe Therelore, . collecto: 7 ‘The totatement fy at Qy sequal fo the sum of two collector currents of ty 4, hye ley t ley aya t tenn, 1 824 + Tenog When gate fs hlggered he ltly lye yly leno, 2a ta) leno, Iq = (ly + leno, + Hono,)!1 = (ay +42) In silicon transistors, the current gain «ay, is very low at lower emitter current wit increase in emitter current, a builds up rapidly. Atl, = 0, the a4 + ay is very low, By some means, if we increase the emitter curren two components so that a, + a, becomes unity. Hence the anode current |, becor Infinity, then thyristor will get turn-ON. V-I CHARACTERISTICS OF THYRISTOR A thyristor is having four layers, three terminal with three PN junctions. The circ diagram for obtaining static V-I Characteristics of a thyristor is as shown in Fig. 1.4 When the anode voltage is made positive with respect to the cathode with switch open the junctions J; and J3 are forward biased as shown in Fig, 1.4 (a), The junct dz is reverse biased and only a small leakage current of the order of few milliampe will flows from anode to cathode. At this position the thyristor will behave like “forw« blocking (or) OFF-state condition”. If the anode to cathode voltage is increased! sufficiently large voltage, the reverse biased junction dg will breakdown. This is kno as “Avalanche breakdown” and the voltage at which the junction Jg will break do that voltage is known as “Forward break-over voltage” and it is represented in! graph as Vgo in Fig. 1.4. Hence all the three junctions will allow the electrons anode to cathode, consequently a large current will flow this is known as “For anode current”. The voltage drop across the four layers due to ohmic drop is “ small and it is usually equal to 1 to 1.5 volt. At this position the thyristor is said '° “ON-state (or) Conducting state”.APTER-1. | Power Electronic Dervices A Forward {0a enkage \t Leakage i" x Current erse — Leakage : Current (a) Je Reverse biased (b) Jo Forward biased & Jy, Js Forward biased & Jy, Js Reverse biased FIG 1.4: Circuit Diagram for Obtaining VI Characteristics Once the thyristor conducts, it behaves like a conducting diode and there is no control over the device. The anode current of thyristor is limited by an external impedance (or) Load. The anode current must be more than the value of “Latching current (I,)” in order to maintain the thyristor ON-state, otherwise the thyristor will return to the blocking state. Latching current is the minimum anode current required to maintain the thyristor in ON-state immediately after a thyristor has been turned ON. Holding current is the minimum anode current required to maintain the thyristor in QN-state. orf Hence, when the thyristor is switched ON, the resulting forward current has to be more than the latching current. However if the forward anode current is reduced to below a level of holding current Ij, the thyristor will enter in to a state of blocking. These forward characteristics are represented in the V-I characteristics and is shown in Fig. 1.5. When cathode is made positive with respect to the anode with “s” open the thyristor is reverse biased. The junctions J, and dg are reverse biased and J is forward biased as shown in Fig. 1.4(b). The device behaves as if two diodes are connected in series with Teverse voltage across them. A small leakage current of the order of few milli-ampere (or) few micro-ampere will flow. This is known as “Reverse blocking (or) OFF-state” of thyristor. If the reverse voltage is increased, then at a critical breakdown level, called “reverse break down voltage” an avalanche occurs at J; & J3 and the reverse current increases rapidly. Due to this large reverse current and the losses will be increased NG OF THIS BOOK iS ILLEGALzl per Hse the thyristor is opera thyristor. Hence ™! ° ting Lg canes . to applied otherwise the thyristor may leas, ] hence it may lea ‘a voltage less thal in Fig. 1.5. reverse bias and is shown i Forward cond damag “ { state) | ever leakage een | | Yow vs Forward Forward blocking eakage current Reverse blocking ‘orward breakover voltage ie breakover voltage = Gate current “4 cteristics of SCR (Thyristor) valanche Break Down cathode is made positive with respec everse biased, while junction Jz is forwer: two diodes connected in sen= t of the orce FIG 4.5 : V-l Chara 1.5.1 Reverse Blocking and Reverse A’ ristor is said to be reverse biased when The thy’ to anode. Then junction dj and dg are r e same manner as biased. The device behaves in th d across them. A small reverse leakage curren hrough it. This is known as “Reve! with reverse voltage applie' of few milli amperes or micro amperes will flow t Blocking or OFF-State” of the thyristor. n reverse blocking, the junctions J; and J3 2%¢® increase’ ts bree anche in the When the thyristor is operating ii reverse biased and junction J is forward bias. If the reverse applied voltage isi further, at certain value of voltage the reverse biased junctions J and J3 ge! down. ne break down of junctions Jj and J3 are also known as “Reverse ava! reak down”. Due to this, high currents will be developed across the junction | it me thyris i poeta may cross the permissible value of junction temperature. Hence chal be thon the thyristor. Therefore when the thyristor used in any circuit © en in such a way that the maximum reverse voltage should not ex¢?* its break down voltage. 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