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P-N Junction Diode Biasing Explained

The document discusses the variation of potential across a p-n junction, highlighting factors affecting the potential barrier and depletion region width. It explains the concepts of forward and reverse biasing in semiconductor diodes, detailing how external voltage influences the behavior of the diode. Key characteristics of the VI characteristics in both forward and reverse biasing are also outlined.

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priyanshurock906
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39 views13 pages

P-N Junction Diode Biasing Explained

The document discusses the variation of potential across a p-n junction, highlighting factors affecting the potential barrier and depletion region width. It explains the concepts of forward and reverse biasing in semiconductor diodes, detailing how external voltage influences the behavior of the diode. Key characteristics of the VI characteristics in both forward and reverse biasing are also outlined.

Uploaded by

priyanshurock906
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

VARIATION OF POTENTIAL ACROSS P-N JUNCTION

p n

d
E
V0
SOME IMPORTANT POINTS
 Potential barrier depends on
(i) Doping (ii) Temperature (iii) Type of semiconductor
 Width of depletion region depends on doping concentration.
1
Width 
Doping concentration
 A semiconductor diode is basically a p-n junction with metallic contacts provided at
the ends for the application of an external voltage.
 It is a two terminal device
BIASING
The process of applying potential difference across PN diode is known as biasing

Forward biasing Reverse biasing


1. When external voltage V is 1. When external voltage V is
connected across the diode such connected across the diode such
that P side is at high potential and N that P side is at low potential and N
side is at low potential, the diode is side is at high potential, the diode is
said to be forward biased said to be reverse biased

P N P N
P N P N

+ – – + – +
FORWARD BIASING

Vknee
Threshold voltage
Cut in voltage
VI characterstics of PN diode in
forward bias
• Potential barrier will decrease (V0 – V) 1
2
• Depletion region decreases
• Diffusion current will increase V0
• PN junction after low resistance
Barrer potential (1) without battery
(2) with battery voltage V
REVERSE BIASING
V(volts)
I0
(Reverse
saturation current)

i(mA)
VI characterstics of PN diode in
reverse bias

2
1
• Potential barrier will increase (V0 + V)
• Depletion region increases V0
• Diffusion current will decreases but due to
the limited availability of minority charge
carriers drift current remains the same Barrer potential (1) without battery
• PN junction offer high resistance (2) with battery voltage V

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