N-Channel Enhancement Mode MOSFET

BL2302D
Features
 Advanced trench technology
 Exceptional on-resistance and maximum DC current capability
 Electrostatic sensitive devices

Typical Applications
 Load/Power Switch for Portables
 PWM Applications

Mechanical Data
 Case: SOT-23
 Molding Compound: UL Flammability Classification Rating 94V-0
 Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208 SOT-23

Ordering Information
Part Number Package Shipping Quantity Marking Code

BL2302D SOT-23 3000 pcs / Tape & Reel 2302D

Maximum Ratings (@ TA = 25°C unless otherwise specified)

Parameter Symbol Value Unit

Drain-to-Source Voltage VDSS 20 V

Gate-to-Source Voltage VGSS ±12 V

Continuous Drain Current (TA = 25°C) *2 3.2 A

ID
Continuous Drain Current (TA = 70°C) *2 2.6 A

Pulsed Drain current (tp = 10μs, TA = 25°C) IDM 16 A

Single Pulse Avalanche Energy *4 EAS 2 mJ

Power Dissipation (TA = 25°C) *1 1.25 W

PD
Power Dissipation (TA = 25°C) *2 1 W

Operating Junction Temperature Range TJ -55 ~ +150 °C

Storage Temperature Range TSTG -55 ~ +150 °C

Thermal Characteristics
Parameter Symbol Min. Typ. Max. Unit

Thermal Resistance Junction-to-Air *1 - - 100 °C/W

RθJA
Thermal Resistance Junction-to-Air *2 - 110 125 °C/W

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 N-Channel Enhancement Mode MOSFET
BL2302D
Electrical Characteristics (@ TA = 25°C unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit

Static Characteristics
VDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 20 - - V

IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V - - 1 μA

IGSS Gate-Body Leakage Current VGS = ±12V, VDS = 0V - - ±100 nA

On Characteristics
VGS = 4.5V,ID = 3A - 54 65 mΩ
RDS(ON) Drain-Source On-resistance *3
VGS = 2.5V,ID = 2A - 76 85 mΩ

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 0.4 0.9 1.0 V

RG Gate Resistance VGS = 0V, f = 1MHz - 17 - Ω

Dynamic Characteristics
CISS Input Capacitance VGS = 0V - 188 -

COSS Output Capacitance VDS = 10V - 28 - pF

CRSS Reverse Transfer Capacitance f = 1.0MHz - 22 -

Switching Characteristics
td(ON) Turn-on Delay Time *5 - 5 -
VDD =10V
tr Turn-on Rise Time *5 VGS = 4.5V - 8.5 -
ns
td(OFF) Turn-Off Delay Time *5 ID = 1A - 11 -
RG = 6Ω
tf Turn-Off Fall Time *5 - 3 -

QG Total Gate-Charge VDD = 10V - 3.3 -

QGS Gate to Source Charge VGS = 4.5V - 0.8 - nC

QGD Gate to Drain (Miller) Charge ID = 3.6A - 0.6 -

Source-Drain Diode Characteristics

VSD Diode Forward Voltage *3 IF = 1A, VGS = 0V - 0.8 1.2 V
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t ≤ 5s
2. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, steady state
3. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%
4. The EAS data shows Max. rating. The test condition is VDD = 15V, VGS = 10V, L = 0.1mH
5. Guaranteed by design, not subject to production

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 N-Channel Enhancement Mode MOSFET
BL2302D
Ratings and Characteristics Curves (@ TA = 25C unless otherwise specified)
1.2 4

1
3
0.8
PD(W)

ID(A)
0.6 2

0.4
1
0.2

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TA(℃) TA(℃)

Fig 1 Power Dissipation Fig 2 Drain Current

15 150
VGS = 3 V

VGS = 2.5V
VGS = 4.5V/6V/8V VGS = 2.5 V
10 100
RDS(ON)(mΩ)
ID(A)

VGS = 2.2V

VGS = 2 V
5 50
VGS = 1.8V VGS = 4.5 V

VGS = 1.5V
0 0
0 1 2 3 0 1 2 3 4 5 6 7 8 9 10
VDS(V) ID(A)

Fig 3 Typical Output Characteristics Fig 4 On-Resistance vs. Drain Current

and Gate Voltage

200 15
ID = 3A

150 150℃
10
RDS(ON)(mΩ)

150℃
IS(A)

100
-55℃
25℃
5
25℃
50
-55℃

0 0
0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5
VGS(V) VSD(V)

Fig 5 On-Resistance vs. Gate-Source Voltage Fig 6 Body-Diode Characteristics

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 N-Channel Enhancement Mode MOSFET
BL2302D

1.5 20 -55℃
VDS = 5V
RDS(on), Normalized Static Drain-Source

1.4 25℃
VGS = 4.5V; ID = 3A
1.3 15 150℃
OnState Resistance

1.2

ID(A)
1.1 10
VGS = 2.5V; ID = 2A
1
0.9 5
0.8
0.7 0
-75 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5
TJ(℃) VGS(V)

Fig 7 Normalized On-Resistance vs. Junction Fig 8 Transfer Characteristics

Temperature

1000 4.5
f = 1 MHz VDS = 10V；ID = 3.6A
4
Ciss 3.5
3
2.5
VGS(V)
C(pF)

100
2
Coss 1.5
1
Crss 0.5
10 0
0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5
VDS(V) Qg(nC)

Fig 9 Capacitance Characteristics Fig 10 Gate-Charge Characteristics

1.09 1.3
VGS(th), Normalized Threshold Voltage

1.07 1.2
BVDSS, Normalized Drain-Source

1.05 1.1
Breakdown Voltage

1.03
1
1.01
0.9
0.99 ID = 250uA
ID = 250uA
0.8
0.97
0.95 0.7

0.93 0.6
-75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150
TJ(℃) TJ(℃)

Fig 11 Normalized Breakdown Voltage Fig 12 Normalized VGS(th) vs. Junction Temperature

vs. Junction Temperature

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 N-Channel Enhancement Mode MOSFET
BL2302D
100

tp= 10 us
100
10 δ = 0.5

Zth(j-a)(K/W)
100 us
0.2
ID(A)

1
10 0.1
1 ms

0.05
10 ms
0.1
100 ms
0.02
TA = 25℃
δ = tp/T= 0.01 0.01
0.01 1
0.1 1 10 100 0.000001 0.0001 0.01 1 100
VDS(V) tP(s)

Fig 13 Safe Operation Area Fig 14 Maximum transient thermal impedance

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 N-Channel Enhancement Mode MOSFET
BL2302D
Package Outline Dimensions (Unit: mm)
A SOT-23
Dimension Min. Max.
E
A 2.70 3.10
K B
B 1.10 1.50
C 0.90 1.10
D 0.30 0.50
D J
E 0.35 0.48
G G 1.80 2.00
H 0.02 0.10
H J 0.05 0.15
C
K 2.20 2.60

Mounting Pad Layout (Unit: mm)

SOT-23
0.95 0.95

2.00

0.90

0.80

IMPORTANT NOTICE
Changzhou Galaxy Century Microelectronics (GME) reserves the right to make changes without further
notice to any product information (copyrighted) herein to make corrections, modifications,
improvements, or other changes. GME does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights, nor the
rights of others.

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