Chapter 4
PHOTODETECTORS
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Fig. 4.1.1. (A) Energy band diagram of separate n- and p-type semiconductors, (B) energy diagram of a pn junction under equilibrium,
(C) density of space change in the junction region, and (D) electrical field distribution inside the space-charged region.
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Fig. 4.1.2. Energy band diagram of a pn junction with reverse bias and photocurrent generation.
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Fig. 4.1.3. Illustration of photon absorption in PN photodiode.
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Fig. 4.1.4. (A) Illustration of PIN structure, (B) distribution of space charge, and (C) built-in electrical field distribution.
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Fig. 4.1.5. (A) Image of a packaged large area PIN photodetector, (B) illustration of the layer structure and electrodes, (C) image of a fiber
pigtailed photodiode of relatively low speed, and (D) image of a high-speed fiber pigtailed photodiode with an RF connector.
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Fig. 4.2.1. (A) Illustration of wavelength-dependent photodetector responsivity and the impact due to photon energy and material bandgap
and (B) responsivity of practical photodiodes based on Si and InGaAS.
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Fig. 4.2.2. Illustration of time-domain impulse response of a photodiode.
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Fig. 4.2.3. Photodiode current-voltage relationship.
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Fig. 4.2.4. (A) Photodiode preamplifier based on a voltage amplifier and (B) small-signal equivalent circuit.
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Fig. 4.2.5. (A) Photodiode preamplifier based on a transimpedance amplifier (TIA) and (B) small-signal equivalent circuit.
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Fig. 4.3.1. Decomposing SNR by its three contributing factors.
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Fig. 4.4.1. (A) APD layer structure, (B) charge density distribution, and (C) electrical field density profile.
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Fig. 4.4.2. Illustration of the carrier multiplication process.
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Fig. 4.4.3. Operation principle of a single-photon detector. Np: number of photons received, Ip: photocurrent, VB: applied biasing voltage.
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Fig. 4.4.4. Biasing circuits for passive (A) and active (B) quenching of a Geiger mode APD.
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Fig. 4.5.1. (A) Illustration of a photovoltaic based on a pn junction, (B) charge distribution, and (C) potential distribution
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Fig. 4.5.2. (A) Photocurrent as the function of voltage on the load and (B) electric power delivered to the load resistor as the function of
voltage on the load. Is=4×10−8mA is assumed in the calculation.
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Fig. 4.5.3. (A) Equivalent electric circuit of a photovoltaic and (B) photocurrent (left vertical axis) and electric power delivered to the
load (right vertical axis) as the function of load voltage. Is=4×10−8mA and VOC=0.52V are assumed.
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Fig. 4.5.4. (A): Cross-sectional structure of CCD and (B)–(F): illustration of programmable charge shift in the readout process.
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Fig. 4.5.5. Illustration of row and pixel shift for converting a 2D imaging array into a time-domain waveform and a picture of 1D and 2D
image sensor products. Used with permission from Teledyne DALSA.
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