In an abrupt p-n junction, the equilibrium band diagram results in the conduction band (EC) and valence band (EV) bending near the junction due to the electric field. The extent of this bending is related to the concentration of acceptors (Na) and donors (Nd) on either side. A higher doping concentration increases the gradient in the energy bands across the junction, which also increases the built-in potential V0. Specifically, the built-in potential is determined as V0 = (kT/q) * ln((Na * Nd)/ni^2), meaning it depends logarithmically on the doping levels .

In a silicon n+p junction under reverse bias, the current density is influenced by minority carrier flow across the junction due to diffusion from concentration gradients set by doping densities. High acceptor concentration on the p side increases doping gradient against the n side, leading to enhanced recombination and thus altering diffusion-based current density. Reverse bias widens the depletion region, dominant under lower minority charge carriers, leading predominantly to leakage current suggesting low current density despite reversed voltage gradients; this operates inversely to forward bias enhanced injection processes where carrier recombination is enhanced .

Forward bias reduces the potential barrier at the p-n junction, enhancing carrier injection across the junction: electrons move from n to p-side, holes from p to n-side, thus increasing current substantially. This is because forward bias lowers the band-bending allowing majority carriers to recombine around the depletion edge rapidly, facilitating large currents. In reverse bias, the depletion width widens, further restricting carrier motion and allowing only minor leakage current due to thermally generated minority carriers, thereby significantly limiting the current even at higher voltages .

For a semiconductor bar, conductivity σ is given by σ = q * n * μ, where q is the charge, n is the carrier concentration, and μ is the mobility. If carrier concentration 'n' or mobility 'μ' changes, conductivity consequently changes. Specifically, halved doping concentration would reduce n, decreasing conductivity and thereby reducing the current density, assuming constant applied voltage. Stretching the bar length by four times and halving the doping means a quarter reduction in overall conductivity, altering how current density is calculated from the voltage applied over the new length .

The resistance R of a semiconductor bar can be calculated using R = L / (σ * A), where L is the length, A is the cross-sectional area, and σ is the conductivity. For an n-type silicon bar, conductivity σ is determined by σ = q * n * μ, where q is the charge of an electron (approximately 1.6 x 10^-19 C), n is the majority carrier concentration (5x10^20 /m^3 for the given bar), and μ is the carrier mobility (0.13 m^2/V-s). By substituting these values into the equation, we find the resistance R = 0.1 cm / (1.6 x 10^-19 C * 5x10^20 /m^3 * 0.13 m^2/V-s * 100 µm^2), providing the resistance for the silicon bar at 300 K .

Introducing donors (Nd = 10^16/cm^3) increases the electron concentration (n0) as the semiconductor becomes n-type. Using n0 = ni^2 / p0 and charge neutrality n0 = Nd - Na must hold. Adding acceptors (Na = 2x10^16/cm^3) further complicates the equilibrium leading to p-type characteristics converting calculation to p0 = Na - Nd. The Fermi level shifts depending on dominant type: if donor concentration is exceeded by acceptors, holes increase and EF shifts towards EV, highlighting complex equalization between induced and intrinsic carriers. Resultant electron and hole concentrations indicate n << p, establishing the newly p-type transformed semiconductor .

In an n-type semiconductor, doping causes the Fermi level to shift closer to the conduction band initially. When biased, the band diagram deviates due to energy alignment alterations by the applied field: under forward bias, bands bend from their flat position with conduction band lowering on one side, facilitating electron movement across the depletion region. As this occurs, the equivalency in energy for carrier propagation is disrupted, advocating increased drift-diffusion mechanisms leading to charge transport. The external bias behaves like an external load, influencing both equilibrium and dynamic conditions resulting from band modification .

The Fermi level EF acts as a reference point setting the energy at which the probability of electron occupancy is 50% at thermal equilibrium. Its position relative to the conduction (Ec) and valence bands (Ev) indicates carrier type: closer to Ec signifies n-type, closer to Ev indicates p-type. Doping shifts EF towards donor or acceptor bands increasing electron or hole presence, respectively. Temperature affects intrinsic carrier movement and thus EF, as thermal energy kT influences carrier ionization probability. Higher temperatures yield more intrinsic carriers, minimizing impact of fixed-dopant EF alterations, leading back towards ni-dominated, intrinsic-like conditions .

In a semiconductor, the effective densities of states in the conduction (Nc) and valence bands (Nv) help in determining the intrinsic carrier concentration given by ni = √(NcNv) * exp(-Eg/(2kT)) where Eg is the band gap, k is Boltzmann's constant, and T is temperature. By knowing intrinsic carrier concentration ni and effective densities Nc, Nv, we can rearrange to find Eg, important for another characteristic like potential determination of shifts in fermi levels upon doping adjustments or temperature variance. Hence, solving the formula Eg = 2kTln(NcNv/ni^2) enables Eg extraction from known state densities providing fundamental semiconductor properties .

Doubling the doping on the p-side of a p+n diode generally results in a decrease in the depletion width, which typically increases the capacitance, as C is inversely related to the depletion width. Moreover, increasing the reverse bias from 5V to 100V increases the amount of charge within the depletion region, which also increases capacitance. Therefore, both changes would result in a higher capacitance for the p+n diode .