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EC3353 EDC Question Bank and Guide

The document outlines the syllabus and exam questions for the EC3353 Electronic Devices and Circuits course, covering topics such as semiconductor devices, amplifiers, and multistage amplifiers. It includes both Part A and Part B questions, detailing specific concepts, definitions, and derivations needed for understanding the subject matter. Additionally, it provides guidelines on how to prepare for scoring different ranges in the examination.

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0% found this document useful (0 votes)
233 views11 pages

EC3353 EDC Question Bank and Guide

The document outlines the syllabus and exam questions for the EC3353 Electronic Devices and Circuits course, covering topics such as semiconductor devices, amplifiers, and multistage amplifiers. It includes both Part A and Part B questions, detailing specific concepts, definitions, and derivations needed for understanding the subject matter. Additionally, it provides guidelines on how to prepare for scoring different ranges in the examination.

Uploaded by

mohancriminal0
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

NH-46, Arappakkam, Vellore – 632517. TN.

EC3353 – ELECTRONIC DEVICES AND CIRCUITS

1|Page
EC3353 – ELECTRONIC DEVICES AND CIRCUITS
UNIT-I – SEMICONDUCTOR DEVICES
PART-A

1. What is meant by drift current and diffusion current? (JUN 03,10,DEC 02,06,09,13)
2. Define knee voltage or cut in voltage. (MAY/JUN 06,07 NOV/DEC 10)
3. Define Intrinsic standoff ratio for UJT. (NOV/DEC 11, NOV/DEC 13,MAY/JUN 12,14)
4. What is pinch off voltage? (MAY/JUN 05, NOV/DEC 06,07,08,09,11)
5. What is the relation between IB,IC and IE in CB configuration (DEC 05,13,JUN 12)
6. What are the types of biasing? (NOV/DEC 07,10,15)
7. What is early effect? (NOV/DEC 09,MAY/JUN 11)
8. What is transition and diffusion capacitance? (MAY/JUN 08, NOV/DEC 07,14,15,17,20)
9. What is ripple factor for HWR, FWR? (MAY/JUN 06,07 NOV/DEC 05,08)
10. Differentiate between zener and avalanche breakdown. (JUN 05,17 NOV/DEC 03,11)
11. Define TUF, write TUF for HWR, FWR. (MAY/JUN 03,09 NOV/DEC 07)
12. What is peak inverse voltage? (MAY/JUN 06NOV/DEC 10)
13. Define depletion region in PN junction diode. (MAY/JUN 09 NOV/DEC 07)
14. Give diode current equation. (MAY/JUN 06,07,14)
15. Define static and dynamic resistance of diode. (MAY/JUN 11,13)
16. Define rectifiers. Mention its types. (MAY/JUN 15, NOV/DEC 13,14)
17. Draw half wave rectifier and its characteristics. (APR/MAY 17)
18. Draw the circuit diagram of the regulated DC power supply. (NOV/DEC 21)
19. Draw the energy band diagram of Si and Ge at room temperature (NOV/DEC 03)
20. How PN junction is formed and give its applications. Or Give the applications of diode.
(NOV/DEC 07,16, MAY/JUN 12)
21. Define Ripple factor. (NOV/DEC 03,10)
22. What is meant by breakdown voltage in PN junction diode. (MAY/JUN 09)
23. Draw the symbols a)PN diode b) zener diode c)UJT (/JUN 12,13 NOV/DEC 15)
24. Calculate diffusion capacitance for Si diode with 15mA forward current if charge carrier transit
time is 70nsec. (NOV/DEC 15)
25. What are the limitations of using zener diode as regulator? (NOV/DEC 05)
26. What is MOSFET? Name its types and its advantages. (NOV/DEC 11,21)
27. Why donor and acceptor impurity called so? (APR/MAY 17)
28. Differentiate full wave and half wave rectifier? (Nov /Dec 14)
29. Define Semiconductor. (Nov /Dec 14)
30. A silicon diode has a saturation current 7.5µA at room temperature 300k. Find the saturation
current at 400k. (NOV/DEC 16)
2|Page
PART - B

1. With neat diagram explain the working of PN junction diode in forward bias and reverse bias and
show the effect of temperature on its V-I characteristics. (APR/MAY 06,07,08,09,10,14, NOV/DEC
05,06,07,12,13,14,15,20)
2. Explain the operation and V-I characteristics of zener diode. (APR/MAY 08,10,14 NOV/DEC
10,13,15)
3. Explain the operation of Full Wave Rectifier with centre tap transformer also derive the following
a)DC o/p voltage b)DC o/p current c)RMS d) Ripple factor e) PIV (APR/MAY 17,15,12,11 NOV/DEC
09,10,11,13,15,20)
4. Differentiate between zener and avalanche breakdown. (APR/MAY 08,10 NOV/DEC 10,13,15)
5. Explain Zener diode as voltage regulator. (APR/MAY 08,12,13,14 15,17, NOV/DEC 09,10,15,17,20)
6. With circuit diagram explain full wave bridge rectifier and derive the expression for average output
current and rectification efficiency? (APR/MAY 10,14, NOV/DEC 11,14,17)
7. Explain the construction and operation of NPN transistor with neat sketch. Also comment
characteristics of NPN transistor. (MAY/JUN 02,09,12,13,14 NOV/DEC 10,14)
8. Explain the biasing characteristics of BJT. (MAY /JUN 02,04,05,06,08,10,14,17 NOV/DEC 14)
9. Explain the construction and working of enhancement MOSFET and depletion MOSFET. Draw the
characteristics. (NOV/DEC 11, NOV/DEC 13,MAY/JUN14,17)
10. Explain the construction and operation of PNP transistor with neat sketch. Also comment
characteristics of PNP transistor. (MAY/JUN 02,10,11,15 NOV/DEC 10,14)
11. Explain the working and principle of UJT and mention its applications. (JUN 13, 14, NOV/Dec 13,20)
12. Write down and drive the expression for Transition capacitance (CT) and diffusion capacitance.
(APR/MAY 03,06,17, NOV/DEC 02,03)
13. What is rectifier? Explain in detail the operation of a Half-wave rectifier. (NOV/DEC 21)
14. Write a brief note about PIV in the PN diode. (NOV/DEC 21)
15. Derive PN junction diode current. (APR/MAY 11)
16. What is drift and diffusion current.(APR/MAY 12,13)
17. Derive the expression of the space charge or Transition Capacitance of PN junction diode under
reverse bias with a neat diagram. (NOV/DEC 16)

NOTE:

1. To score (50-59) - Study ‘(1 TO 10)’ questions of part A and ‘(1 TO 5)’ of part B.

2. To score(60-79) - Study ‘(1 TO 20)’ questions of part A and ‘(1 TO 10)’ of part B.

3. To score(80 and above) - Study ‘(1 TO 30)’ questions of part A and ‘(1 TO 17)’ of part B.

3|Page
UNIT-II AMPLIFIERS

PART-A
1. What is the bandwidth of an amplifier? (APR/M 07, 09,14 NOV/DEC 02, 05, 06, 08, 09)
2. What are hybrid parameter? (NOV/DEC 10,13 APR/MAY 03)
3. State Miller’s theorem. (APR/MAY04, 08, 12,13 NOV/DEC06, 07)
4. Draw the hybrid small signal model (π) of CB, CE, CC configuration. (NOV/DEC 12,13,21, APR/MAY
12,15)
5. What is the significance of octaves and decades in frequency response? (N/D 06, A/M14)
6. Define the 4 h-parameter. (APR/MAY 03, 06, 07,13 N/D 14)
7. Compare CB, CC and CE configuration. (APR/MAY 17 NOV/DEC 20)
8. What is stability factor? (MAY/JUN 11)
9. Draw the circuit of CE configuration (MAY/JUN 13)
10. Give the difference between E-MOSFET and D-MOSFET. (NOV/DEC 11,JUN 14)
11. Compare BJT,FET,MOSFET (NOV/DEC 13, MAY/JUN 14,NOV/DEC 14)
12. Give the voltage gain for CE configuration including source resistance. (NOV/DEC14,MAY 12)
13. Draw the general frequency response curve of an amplifier. (NOV/DEC14)
14. For an amplifier, mid band gain=100 and lower cutoff frequency is 1kz. Find the gain of an
amplifier at a frequency of 20 Hz.(APR/ MAY12)
15. Draw a source follower circuit(APR/MAY12 )
16. Draw the circuit diagram of CS amplifier (NOV/DEC11)
17. What is an amplifier? (APR/MAY11)
18. Define thermal run away and heat sink. (APR/MAY12 )
19. Show the frequency response curve of an amplifier and what is 3 Db frequency.(MAY11)
20. When transistor acts as a switch, in which regions of output characteristics it is operated.
(NOV/DEC 12)
21. Define base width modulation (early effect). (APR/MAY12 )
22. What is the need of coupling capacitor in amplifier design?(NOV/ DEC15)
23. The MOSFET is used to amplify a time varying voltage. Justify. (NOV/DEC 21)
24. Mention the condition for proper amplification of a signal. (NOV/DEC 20)

PART-B
1. Draw and explain the input and output characteristics of CB, CE, CC configuration. (MAY/JUN
03,05,06,07,09,11,12 NOV/DEC 02,03,04,05,06,07,08,09,10,13,20,21)
2. Explain in detail with neat diagram frequency response of BJT amplifier or RC coupled
amplifiers. discuss the significance of cutoff frequencies and bandwidth of the amplifier.
(APR/MAY 04,07,08,09,11,14 NOV/DC 02,05,06,08,09,11,14,21)
3. Explain the small signal amplifier performance in terms of h-parameter equivalent circuit of a
transistor in CE configuration.(APR/MAY 03,05,09 NOV/DEC 05,06,14)
4. Derive the necessary equation to calculate the gain, input and output impedance of common
emitter amplifier. (NOV/DEC 20)
5. Discuss the transistor hybrid model with h-parameter (or) explain how h-parameter can be
obtained from the transistor characteristics (NOV/DEC13)
6. Explain the frequency response of a BJT amplifier. Discuss the significance of cutoff frequencies
and bandwidth of the amplifier.(APR/MAY14)
7. Illustrate the working of bootstrapped Darlington circuit with a neat sketch. (NOV/DEC 21)

4|Page
8. Derive the expression for voltage gain of CS amplifier. (APR/MAY14)
9. Draw and explain the small-signal model of a MOSFET. (NOV/DEC 21)
10. For CS amplifier, the operating point is defined by VGSQ=-2.5V,VP=-6V and DQ=2.5mA.
also RG=1MΩ, RS=1kΩ,RD=2.2KΩ and VDD=[Link] gm, rd, Zi, Zo, Ao.(NOV/DEC13)
11. Derive the expression for A1,Av,Ri and Ro for CB amplifier using h-parameter.(APR/MAY13)
12. Derive the expression for A1, Av, Ri and Ro for CC amplifier using h-parameter.(NOV/DEC13)
13. Define and proof the Miller’s theorem. (APR/MAY12)
14. Discuss the significance of cutoff frequencies. (APR/MAY13)
15. A CC amplifier shown in below figure has VCC=15 V, RB=75kΩ and RE=910Ω The β of the silicon
transistor is 100 and the load resistor is 600Ω. Estimate rin and Av. (NOV/DEC15)

16. The MOSFET shown in below figure has the following [Link]=2V, β=0.5×10 -3, rD=75kΩ. It is
biased at ID=1.93 mA. Determine the impedance and voltage gain . (NOV/DEC15)

17. With neat circuit diagram, evaluate the ac analysis for common source using equivalent circuit
NMOSFET amplifier (NOV/DEC 15)
18. With neat circuit diagram, explain drain and transfer characteristics of DMOSFET amplifier.
(Nov/Dec 21)
19. Discuss the factors involved in the section of Ic, Rc and Re for a single stage CE BJT amplifier
circuit, using voltage divider bias. (NOV/DEC 15)

NOTE:

1. To score (50-59) - Study ‘(1 TO 10)’ questions of part A and ‘(1 TO 5)’ of part B.

2. To score(60-79) - Study ‘(1 TO 15)’ questions of part A and ‘(1 TO 10)’ of part B.

3. To score(80 and above) - Study ‘(1 TO 24)’ questions of part A and ‘(1 TO 19)’ of part B.

5|Page
UNIT-III MULTISTAGE AMPLIFIERS AND DIFFERENTIAL AMPLIFIER

PART-A

1. Define CMRR. what is its ideal value. (APR/ MAY 04, 06, 07, 09, 10, 14, 17, NOV/ DEC 02, 05, 07,
08, 09, 10, 14, 15,20,21)
2. What is the need for neutralization in tuned amplifiers? (NOV/DEC 08,09,10,20,21,15, MAY 14)
3. What is narrow band neutralization? (APR/MAY 08, 11 NOV/ DEC 03, 12, 14)
4. Draw the circuit for narrow band neutralization? (APR/MAY15 NOV/DEC 10)
5. What is meant by unloaded and loaded Q of tank circuit? (APR/MAY 03 NOV/DEC 10,14)
6. Why common base amplifier is preferred for high frequency signal when compared to common
emitter amplifier? (APR/MAY13 NOV/DEC 10)
7. What is the coupling schemes used in multistage amplifier? (APR/ MAY 13 N/D10)
8. List the various methods of improving CMRR. (APR/MAY15 NOV/DEC 14)
9. Write down the need of cascading the amplifiers (NOV/DEC 14,15)
10. Mention two applications of tuned amplifiers. (NOV/DEC 07, 08, APR/MAY 08,14)
11. What is the effect of cascading n stages of identical single tuned amplifiers on overall bandwidth?
(NOV/DEC13)
12. Which is the most commonly used feedback arrangement in cascaded amplifier and why?
(NOV/DEC15)
13. Write the features of Differential amplifier. (APR/MAY 12)
14. An inductor of 250µH has Q=300 at 1MHz . Determine Rs and Rp of an inductor. (APR/MAY12)
15. Write the Advantage and disadvantage of tuned amplifiers. (NOV/DEC 12)
16. Write the comparison of small and large signal amplifiers (NOV/DEC 12)
17. Differentiate various cascading methods (APR/MAY 11)
18. A resonant circuit has C=120pF, L=100µH (with a series resistance of 5 ohms). Find the Q factor and
the bandwidth of the circuit. (APR/MAY 11)
19. Give the difference between the amplifier classes. (NOV/DEC 11)
20. State the various configurations of differential amplifier. (NOV/DEC 11)
21. Draw the cascade amplifier and its ac equivalent circuit. (NOV/DEC 21)
22. Express the equation for overall lower and upper cut-off frequency of an amplifier. (NOV/DEC 21)

6|Page
PART-B

1. Draw the circuit diagram of an Emitter coupled BJT differential amplifier and derive the expressions
for differential gain, common mode gain, CMRR, input impedance and output impedance. (OR)
Explain the working Differential Amplifier and calculate its gain.
(NOV/DEC 10, 12, 13,14, 15,20, APR/MAY 13, 14, 15)
2. With neat sketch explain two stage cascaded amplifier and derive its Av, Ai, Ri and Ro. (MAY 12,14)
3. Discuss on the impact of cascading n-stages of single tuned amplifier circuits on the overall
bandwidth. (NOV/ DEC 20)
4. With a neat diagram explain the Hazeltine method of neutralization. (NOV/DEC 11,15 MAY 10, 11)
5. Explain the classification of power amplifiers. (NOV/DEC15, APR/MAY 17)
6. Discuss about BiMOS cascade amplifiers. (NOV/ DEC 20, 12)
7. Explain the working of single tuned amplifier. Or Illustrate using simple circuit, the basic principle
behind tuned amplifiers. (NOV/DEC12, NOV/DEC 20)
8. Draw the circuit and the equivalent circuit of capacitive coupled single tuned amplifier and explain
the operation. Derive the equation for voltage gain and 3 dB bandwidth. Sketch the frequency
response of an amplifier. (NOV/DEC14)
9. Discuss the advantage and limitations of multistage amplifier. (NOV/DEC14)
10. Draw the circuit of emitter coupled differential amplifier and explain its operations in differential
and common mode. (NOV/DEC 13)
11. What is a differential amplifier and what are its common mode and differential mode inputs.
(MAY 13)
12. With a neat diagram explain the coil method of neutralization. (APR/MAY13)
13. Draw the equivalent circuit of single tuned amplifier and derive the expression for the gain as a
function of frequency. (APR/M15)
14. Discuss about neutralization methods. (APR/MAY 12)
15. Draw the differential amplifier and its ac equivalent circuit. Derive for Ad and Av.(APR/M15)
16. Draw the circuit diagram and explain the working of a differential amplifier using FET. Derive the
expression for differential mode gain and common mode gain. (APR/MAY 17)
17. Using AC equivalent circuit analysis, derive the expression for the gain of a double tuned amplifier.
(NOV/DEC 20)

NOTE:

1. To score (50-59) - Study ‘(1 TO 10)’ questions of part A and ‘(1 TO 7)’ of part B.

2. To score(60-79) - Study ‘(1 TO 15)’ questions of part A and ‘(1 TO 10)’ of part B.

3. To score(80 and above) - Study ‘(1 TO 22)’ questions of part A and ‘(1 TO 17)’ of part B.
7|Page
UNIT-IV FEEDBACK AMPLIFIERS AND OSCILLATORS

PART-A

1. Give the Barkhausen’s criterion for oscillator. (NOV/DEC 03,09,11,12,13,14, JUN 04,11,14,15,17)
2. Define feedback ratio. (NOV/DEC 11,15 MAY/JUN 11)
3. What are the advantages of crystal oscillator? (NOV/DEC 12 MAY/JUN 03, 09)
4. Define feedback amplifier. (MAY /JUN 14)
5. Draw the block diagram of amplifier with feedback network. (MAY /JUN 14)
6. What are the needs and advantages of negative feedback amplifier? (NOV/DEC 14,20)
7. Name four types of basic feedback topologies. (NOV /DEC 14,21)
8. What is return ratio of feedback amplifier? (MAY/JUN 13)
9. Define sensitivity and de-sensitivity of gain in feedback amplifier. (MAY/JUN 13)
10. Explain how negative feedback acts on bandwidth of a circuit. (NOV/DEC 13)
11. Determine the gain with feedback for the amplifier with open loop gain of 300 and feedback factor
of 0.1 (NOV/DEC 13)
12. Mention the three network that are connected around the basic amplifier to implement feedback
concept. (NOV/DEC 15)
13. In an RC phase shift oscillator, if R1=R2=R3=200kΩ and C1=C2=C3=100pF. Find the frequency of
the oscillator. (APR/MAY 12)
14. Compare the RC Phase shift and Wien Bridge Oscillator. (APR/MAY 15)
15. Differentiate oscillator and amplifier. (APR/MAY 12)
16. Define frequency stability of oscillator. (NOV/DEC 12)
17. Define piezo-electric effect. (APR/MAY 11)
18. Merits and Demerits of RC Phase shift oscillator. (APR/MAY 11)
19. Give the condition for sustained oscillation. (NOV/DEC 20)
20. A Wien bridge oscillator is used for the operation at 9kHz. If the value of the resistance R=100kΩ,
what is the required C value. (NOV/DEC 11)
21. Which is the most commonly used feedback arrangement in cascaded amplifiers and why?
(NOV/DEC11)

8|Page
PART-B

1. Draw the block diagram of feedback amplifier and discuss the effect of negative feedback with
respect to closed loop gain, bandwidth and distortion. (NOV/DEC 04, 06, 09, 11, 12, 13 APR/MAY
05, 06, 07, 08, 10, 11, 12)
2. What is the effect of negative feedback on distortion of a feedback amplifier. (NOV/DEC 04, 06, 09,
11, 12, 13 APR/MAY 05, 06, 07, 08, 10, 11, 12)
3. Determine voltage series and current series and current shunt feedback amplifier with examples.
(APR/MAY 007, 13, 17 NOV/DEC 06, 11, 13, 20)
4. Determine Rif, Rof, Av and Avf for the following. (APR/MAY 06, 07,13 NOV/DEC 06, 11 13,20)
[Link] shunt feedback amplifier [Link] series feedback amplifier
5. Explain about the Wien Bridge oscillator . (NOV/DEC 03, 04,15, APR/MAY 03, 04, 05)
6. Explain the working of Hartley oscillator and derive its oscillation. (APR/MAY 14, NOV/DEC 20)
7. Derive the expression for the frequency of oscillation of BJT RC phase shift oscillator. Hence obtain
the expression of amplifier gain required for the oscillation. (A/M14, NOV/DEC 14,20)
8. Draw the neat circuit diagram of Colpitts oscillator using BJT and explain its operation. (APR/MAY
15, NOV/DEC 20)
9. Draw the circuit for common emitter configuration with unbypassed Re and derive the expression
for Rif, Rof, Avf and Aif. (APR/MAY 13)
10. Give the block diagram of feedback amplifier. (NOV/DEC 14)
11. What is crystal oscillator? Draw the circuit diagram and explain the operation. (APR/MAY 15)
12. Draw the block diagram of amplifier with feedback and explain. (NOV/DEC15)
13. Explain the four basic feedback topologies. (APR/MAY11)

NOTE:

1. To score (50-59) - Study ‘(1 TO 10)’ questions of part A and ‘(1 TO 7)’ of part B.

2. To score(60-79) - Study ‘(1 TO 15)’ questions of part A and ‘(1 TO 10)’ of part B.

3. To score(80 and above) - Study ‘(1 TO 21)’ questions of part A and ‘(1 TO 13)’ of part B.

9|Page
UNIT – V POWER AMPLIFIERS AND DC/DC CONVERTERS

PART-A
1. What is cross-over distortion? How it can be eliminated? (May 03,06,07,09,10, Dec 07,08,10,20)
2. Define Conversion efficiency of a power amplifier. What is its value for class C power Amplifier?
(Dec 02,08, May 06,07)
3. What are the advantages of SMPS? (May 04,10,11,Dec 09)
4. Define Total Harmonic Distortion. (May 19)
5. Draw the circuit diagram of transformer coupled class A power Amplifier. (Dec 06)
6. What is meant by harmonic distortion? (May 04,09, Dec 11)
7. Show the input and output waveforms of class A, B and AB power Amplifiers. (May 05)
8. What is theoretical maximum conversion efficiency of class A power Amplifier? (Dec 09)
9. What is the drawback of class B amplifier? How it is minimized? (Dec 04)
10. What is the configuration used in complementary symmetry power amplifier? How does it help?
(Dec 03)
11. What is heat sink? Give its advantages. (Dec 04, May 08)
12. Differentiate between class A and transformer coupled class A amplifiers in terms of
a)Operating Point b)Efficiency (May 11)
13. List the conduction periods of class A, class B and class C Amplifiers. (May 11)
14. List the advantages of push-pull Amplifier. (Dec 11)
15. Define or distinguish between line regulation and Load regulation. (Dec 4, May 09)
16. What is Dc to DC converter? (May 19)
17. What is the need for DC to Dc converter? (NOV/DEC 20)
18. State the condition for maximum efficiency for class B power Amplifier and state the value of
maximum efficiency.
19. List the features of power MOSFET.
20. What is the application of SMPS?
21. State the three basic configurations of the switching regulators.
22. What is Power MOSFET?
23. What is the zero-temperature coefficient?
24. State the features of Power Amplifiers.
25. Why transformer is necessary for connecting load to the power amplifiers?
26. State the limitations of MOSFET amplifiers.

10 | P a g e
PART-B

1. Explain with neat circuit diagram, the working of a transformer coupled class A power amplifier
and give its advantages and disadvantages. Derive the expression for its efficiency. (Dec 02,08,10,
May 03,06,07,09,10)
2. Prove that the maximum efficiency for Class A transformer coupled power amplifier is 50%. (Dec
02,03,04,09, May 11)
3. Draw the circuit of push pull class B power amplifier coupled using transformers and explain the
operation. Prove that all the even harmonics get eliminated. What is the assumption made for this?
(Dec02,03,08, May 06,07,10,11)
4. Draw the circuit of class B push-pull amplifier and discuss its merits. Prove that the maximum
efficiency for class B is 78.5%. (Dec 02,03,05,09, May 11)
5. Explain with relevant diagrams, the operation of Class AB power Amplifier. (NOV/DEC 20)
6. Explain the working of the three commonly used DC/DC converters with circuit and response
diagrams. OR Explain in detail the operation of the switched-mode power supply with a neat
diagram. (NOV/DEC 20,21)
7. Explain the operation of step-down switching regulator and state its advantages and
disadvantages. (May 2019)
8. Explain the operation of step-up switching regulator and state its advantages and disadvantages.
(May 2019)
9. Draw the circuit and explain the operation of buck-boost or voltage inverter type switching
regulator. (May 2019)
10. Explain the classification of power amplifiers based on class of operation. (May 19)
11. Write a note on d.c. load line in power amplifier. (May 19)
12. Compare class A, class B and Class C power amplifier in their performance and efficiency. (May
04,19)
13. Explain Class A RC coupled power Amplifier. (Dec 07)
14. Explain how the characteristics are modified with transformer coupling. (Dec 07)
15. Explain complementary-symmetry class B amplifier and derive its efficiency. (Dec 02,10, May 08)
16. Explain the cross-over distortion and methods to minimize the same. (May 04,05,08,11, Dec 06,09)
17. Draw a transformer coupled class B amplifier using p-n-p transistors and explain its operation,
with the waveforms at various terminals. What is the modification done to alter it to function as
class AB amplifier? What is the need for such a modification? (May 05,08, Dec 09)
18. How output voltage can be regulated with respect to line and load variations using SMPS?
(Dec 05,10)
19. Draw and explain the working of class C tuned amplifier.
20. Write a note on bandwidth and duty cycle of class C tuned amplifier.
21. Explain ac and dc equivalent circuits of class C tuned amplifier.
22. List the features of power MOSFET and Explain the structure of power MOSFET with the help of
neat diagram and draw the V-I characteristics of power MOSFET.
23. Draw and explain the class AB output stage using Power MOSFETs.

NOTE:
1. To score (50-59) - Study ‘(1 TO 10)’ questions of part A and ‘(1 TO 7)’ of part B.
2. To score(60-79) - Study ‘(1 TO 15)’ questions of part A and ‘(1 TO 14)’ of part B.
3. To score(80 and above) - Study ‘(1 TO 26)’ questions of part A and ‘(1 TO 23)’ of part B.
***************************** ALL THE BEST **************************
11 | P a g e

Common questions

Powered by AI

In a half-wave rectifier, the PIV is the maximum voltage the diode can withstand in the reverse-biased direction without breakdown. It is determined by the peak AC supply voltage; PIV must be greater than this value to ensure the diode doesn't conduct in reverse and potentially get damaged. This is important for the reliability and proper operation of the rectifier circuit .

Transformer coupling in power amplifiers offers impedance matching for maximum power transfer and isolation between stages, which is a significant benefit . However, it introduces bulkiness and frequency limitations due to the transformer's inductive nature. Direct coupling avoids these issues but may lead to DC offsets between stages and challenges with impedance matching. The choice depends on the specific application requirements .

Common mode gain in a differential amplifier refers to the amplification of signals common to both inputs, ideally yielding zero in a perfect CMRR scenario, while differential mode gain refers to amplifying the difference between the inputs. CMRR, or Common Mode Rejection Ratio, significantly influences their balance by ensuring the amplifier predominantly amplifies differential signals while minimizing common mode signals, enhancing signal quality and noise rejection .

Total Harmonic Distortion (THD) is a measure of the harmonic distortion present in a signal expressed as a percentage of the total signal power. It quantifies the distortion caused by the non-linear behavior of the amplifier, which results in harmonics that were not present in the input signal. In power amplifiers, low THD is desired for high fidelity sound reproduction as it indicates a cleaner output signal .

E-MOSFET (Enhancement MOSFET) operates by enhancing channel conductivity; it's normally off when the gate-source voltage is zero and requires a positive gate voltage to conduct. D-MOSFET (Depletion MOSFET), however, is normally on and conducts with zero gate-source voltage, requiring a negative gate voltage to turn off . E-MOSFETs are widely used in digital switching applications, while D-MOSFETs serve in analog applications and simple switching roles .

Cascading multiple stages in a single tuned amplifier circuit results in a reduction of the overall bandwidth. This is because each stage has its own frequency response, and when cascaded, the 3 dB bandwidth of the overall amplifier becomes narrower with each added stage, limiting the frequency range over which the amplifier can effectively operate .

The average output current (I_avg) of a full-wave bridge rectifier is given by I_avg = (2 * V_m) / (π * R_L), where V_m is the peak voltage and R_L is the load resistance . Rectification efficiency, η, measures how effectively the rectifier converts AC to DC, defined as the ratio of DC power output to AC power input. It's significant because it indicates the usefulness of the rectifier in applications requiring efficient AC to DC conversion .

A UJT has a single PN junction with a bar of N-type silicon and a P-type emitter. It functions by utilizing the negative resistance region of its characteristics. When emitter voltage exceeds a certain threshold, it triggers current flow, making it useful in oscillators and pulse generation circuits. Its simple construction and robust nature make it suitable for triggering applications where repeatability and reliability are required .

Feedback in amplifiers can profoundly impact stability, bandwidth, gain, and distortion. The four basic feedback topologies are voltage-series, voltage-shunt, current-series, and current-shunt. Each topology alters these parameters differently: for instance, negative feedback generally increases stability and bandwidth while reducing gain and distortion . Selecting the right topology depends on the specific performance improvements needed in the amplifier design .

Neutralization in tuned amplifiers is employed to cancel out parasitic capacitance between input and output, which can lead to unwanted feedback and oscillations. It is necessary to maintain stability and prevent oscillations, particularly in high-frequency amplifiers. Using methods like Hazeltine neutralization, stability is enhanced, allowing for better performance in signal amplification .

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