Transistors

2SA0879 (2SA879)
Silicon PNP epitaxial planar type

For general amplification Unit: mm

5.9±0.2 4.9±0.2
Complementary to 2SC1573

8.6±0.2
■ Features
• High collector-emitter voltage (Base open) VCEO
0.7±0.1

0.7+0.3
–0.2
13.5±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −250 V
Collector-emitter voltage (Base open) VCEO −200 V 0.45+0.2 0.45+0.2
–0.1
–0.1

Emitter-base voltage (Collector open) VEBO −5 V (1.27) (1.27)

1 : Emitter
Collector current IC −70 mA 2 : Collector

(3.2)
1 2 3
Peak collector current ICP −100 mA 3 : Base
2.54±0.15 EIAJ : SC-51
Collector power dissipation PC 1 W TO-92L-A1 Package
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −200 V
Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0 −5 V
Forward current transfer ratio * hFE VCE = −10 V, IC = −5 mA 60 220 
Collector-emitter saturation voltage VCE(sat) IC = −50 mA, IB = −5 mA −1.5 V
Transition frequency fT VCB = −10 V, IE = 10 mA, f = 200 MHz 50 80 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 5 10 pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R
hFE 60 to 150 100 to 220

Note) The part number in the parenthesis shows conventional part number.

Publication date: November 2002 SJC00006BED 1

2SA0879

PC  Ta IC  VCE IC  I B
1.2 −120 −120
Ta = 25°C VCE = −10 V
Ta = 25°C
IB = −2 mA
Collector power dissipation PC (W)

1.0 −100 −100

−1.8 mA

Collector current IC (mA)

−1.6 mA

Collector current IC (mA)

−1.4 mA
0.8 −80 −1.2 mA −80
−1.0 mA
− 0.8 mA
0.6 −60 −60
− 0.6 mA
− 0.4 mA
0.4 −40 −40

− 0.2 mA
0.2 −20 −20

0 0 0
0 20 40 60 80 100 120 140 160 0 −2 −4 −6 −8 −10 0 − 0.4 − 0.8 −1.2 −1.6 −2.0 −2.4
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA)

IB  VBE IC  VBE VCE(sat)  IC

−2.4 −120 −100

Collector to emitter saturation voltage VCE(sat) (V)

VCE = −10 V IC / IB = 10
VCE = −10 V
Ta = 25°C
25°C
−2.0 −100
Ta = 75°C −25°C
Collector current IC (mA)

−10
Base current IB (mA)

−1.6 −80

−1.2 −60 −1

25°C Ta = 75°C
− 0.8 −40

− 0.1
−25°C
− 0.4 −20

0 0 − 0.01
0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 0 − 0.4 − 0.8 −1.2 −1.6 −2.0 − 0.1 −1 −10 −100
Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) Collector current IC (mA)

hFE  IC fT  I E Cob  VCB

300 160 16
C (pF)

VCE = −10 V
VCB = −10 V f = 1 MHz
140 f = 100 MHz 14 IE = 0
(Common base, input open circuited) ob

250 Ta = 25°C Ta = 25°C

Forward current transfer ratio hFE

Transition frequency fT (MHz)

120 12

200
100 10
Collector output capacitance

Ta = 75°C
150 80 8
25°C
60 6
100 −25°C
40 4

50
20 2

0 0 0
− 0.1 −1 −10 −100 0.1 1 10 100 −1 −10 −100
Collector current IC (mA) Emitter current IE (mA) Collector-base voltage VCB (V)

2 SJC00006BED
 2SA0879

IEBO  Ta ICBO  Ta Safe operation area

10 000 10000
VCB = −250 V −1 000
VEB = −5 V Single pulse
Ta = 25°C

ICP
−100

Collector current IC (mA)

1 000 1000
IC t = 10 ms

ICBO (Ta = 25°C)

IEBO (Ta = 25°C)

t=1s

ICBO (Ta)
IEBO (Ta)

100 100 −10

10 10 −1

1 1 − 0.1
0 40 80 120 160 200 0 40 80 120 160 200 −1 −10 −100 −1 000
Ambient temperature Ta (°C) Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)

SJC00006BED 3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
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tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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products.
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2002 JUL
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