0% found this document useful (0 votes)
36 views11 pages

Conductors and Semiconductors Explained

Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
36 views11 pages

Conductors and Semiconductors Explained

Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

classmate

14.5EmI CONDUCTOR ELECTRONICS) Date


Page

Classification metal), Conduetors ond Semi Con ductors


on the basis c Coadictvityi
Chke basis c the velatve volues ch eletyical
Cenduckttty)(o) xe Srsktutty (p=) class:fied a
) Metals hey hase Aigk Condetuity tn Laa esistzuity

R) SemiConduetos: they have Conducttuity (o0 resistty


intex mo diate to metals and inSulators

DrsutoYs

Eleme ntal Semt Conductor s Siand Ge.


Compound Semicsuctors.
iy Onoont , cdS, Gats, cAse InP et
i ogontc Anthocene, deped palo Cyanines ete
W) orantc polyme rs Ply Pmole, pdy an line, pobpophene ete.

Ehergy band
the qxoup of clasely pocked energy leel s Cabed
energy band
Valence bond
The enes bands okiah aYe Compleiely iled at
Zexo Keluin axe (alled Valeae bnd.
Condctton loand
The enexqy band above, the valcnce lband Ps Called
Condetion band. the Conduction band may be emphy
Partially led
alassnate
Dat
Page

The gop beteen valence band aad the Carhctan


bond fS Called ener go

classitcation c metals,ConductaS and Seni (on


ductors

Conductors
Dn metas etex Conduc tico kond is faxtially
d Coasueiion band Can ovexlap the Valeate
band no enexq4 gaf. A large number af-fsee.
ele atot axe avoilatle toY Corsction andhence metals
|hove high Condctvity
tbn
ne

CS
E
VS

vevy Smal Eg oerbyping


Insulaors.
Sa tasulstos enerq4gap 13 very large.lE23e)
he alence band is Completely alled sbile
Conducion bond S emty , Elkctont Cannot-be excited
ra Valence bond to Conduetan band b apelyin
electyie ield tente electrcad Corductian is not posde
ekcton
chetqy
Ev
classHate
Date
Poge

SemiCorductogs
t absdate Zexo tempesaure (ok) tke Valene bond ?s
aled and Condation band is empy and fe materal
Lads a an insulator At xoom tempesature Sone

enaly ercited too Conductson bond. ttence at


|qher empercaYe SemiConductoys_acqutre Some Eorctict
Eletyon
knegy,
Cnductiuty

ntrin3ic Semi Conductor


i) Ltinsic Semi Conductex 2s a Are Semiaoducto

emaly genexated chasse Griers


i) Nesr abscute zero temper atre Semicondctoy
oct lake in Sulatoy. As temperatuse inlieaSeg' due to thera
energ Some clectron break free and Conduct adectichy
i) T¾e Vatanly ck an elethon inhe koond otth an
eecte Gage pstttve charge is Cated a hoe

2-tot Curren
D- le ctron Cunent
Dh- hole Cument

(-+) Sto)6e
elassmate
Date
Page

EztrinSic SemiConductoYS

DE is a type ch SemiConductor hat has been


daped ot6 snpar ities toalter its Condcfivity

The proce}s oh addtng Siitade imaurtby


atoms to pure SemiCocectox ike Sia)6e to enhance
eir electrical Candetutky s calld doping
N-bfe Semi Conducter? Rieedectyen

N-te Semi Condue tor is


outained by doping are 6e
emi CondrtoYS (ike S; (or (44

otA a Resta valent dogantike

)hea pesta valent taAdy


Latom ck p ocupies poStton in fke Iattice o Ge
One 1emains weakly bound to -ke parentatom
it) Elections ase majorrby choge Caxiers hile
hde xe minaty chorge Carriers

P-tpe Semi Condctor -


i) ptee SemiCondctox as

Canductors ike silox) Gel6


tyivalet impurhy ike
ALaminius
classMate
Date
Page

y The -tivalent dopant atong Jons Calent bnds oth


hast Ge(oo Si otoms clhele tRe bond beteen the toutÊ
negh baur and tnivalent atom h)a vacancay óy hale.
y The maforihy chorge Caiers are hdes an minority
Charge Carriers

Neteethe elea on and hole ConCentrahon tn a Semi ondetac


ntheonal equtlibAm nen= ;
Pan junction diodei
whena PtypeSemiCondec for Coystal
S_Jotned witf an n-bype SemiConducfor Crystal
+fen the gesulting arxangsment is Called apn juaci
Fomation ak p-N function

To make a N Junefion -the Nype ano Ptyee

afeyof nye Silicon, an aluninum filniS plaled


and heed taahgh tenexatre 586c almini
AtPfuces isto S:icon aad aptyfe Semi Canduc to iS
On a n-tyre SemiConducfox, Such afmtion
of Pxcqion n N=egion iS Caled P-N Jumchion.

fonation tke depeton een in a P-N Tunton

toncentofn qiodient, 4ole diffsefr rgion


cdassmute
Date
Page

When Qn eketon diffucey om nP it leaves


ehind inmobie pos:tye ion on tke n-Side a electons
Continue to diffuse a layea ek positive. chorge devebps on-ke
nSde ohtke funeton
Similay P-ide developes Jayer o negtie chor
immobile

’Duetopositive phorges h bide, mqatie charze4


p-Side ani electriead is Set cip acinssjunchan
The mothon o ckerge Caters die to electcel ts
ealted dst
>4sdat cussent stts, shich ts oppoSite ?n d:rechon o
tke diusion Current.
both axe egliale
The loss afaletton faon the ý-Yegion and gaia
of ielecton thu Pxqion Caijea fotential iffeenle
Laloy te junchion otRe -tuoo xejins
tRis Paterta tends to pse wen the moment o
often Caed a barnleAtential

Erample 14,3
(Fplo 34)
classmute
Date
Page

Pn Junetion diode inderfonard bias


A pn junchon ?s Satd to be feruard biald
1tk poSttie terminal ot the entesna( batte
iS Connected to P-sde and tke ne gafue t eninal
|to stke n-Side o P-njunction

Lafoxaxd biasng te faxcard ualtage. oses


Re poterial barier Vo , as a nSut o tfate rtie
barrier and widh ot dpleticn layex deceales
ke effecive Ualue okpotentlal baxxier in -torard

P-n Junctiea dicde cunder Teve3se bias3


A Ln junction is Satd to Teve Tse blase
if tRe PoSitive tesminal ct ReR erferna batfer
Cannected to n-Side and negie terminas PSide

fe eletve valhe tr bayxieY pateti under


bias 25 Cvav).
there S no Condecon acest
biaSing
Tever Se bias votape
Kevase CuYrent
Lea liafe Qnest.
dASSmte
Date
Page

V-Dchasa cter tsttes c P-n juntion dde


iy forward characteristcs
Cn platting a gsaph betieen foyhrd biai vo-Bate
ond foracd Cuent se qet kefollouing g1aph.

JSuitch
Threshold voltnge
voltage
wattage V=VeCaled
byand
(a.3y fo Se aad afox Si -the.
Knee Voltege
CurKeat thxaugh ke junctian starts increaSing xoapidly
oHth [Link] Shaoing ßee near variafion But bela
tfe Knee Voltage Re Vaxtatan in Curent is
land tke Cauxve

) ReverSe Chaactex sts


On plttag a qxaph between YevexSe
blel vottage And evese Cutent e geAe
SeveÍse chaxacteristics es shan in ure.
o tke Cunve we nte that sete ree rse
bia Sing o Pnunehon tae Current Svery Smali (A)
land nde pensent Votage upto Catain Yevexc
bial valtege, Knoan beak dDuon voltee
classmate
Date
Page

Yeverse bies boltagr ex eeds -the


eak douw n Valtage,the YeverSe aYYent
increale abrnpty Stkis
hS Cuxeat eceed ke xoted vale o Pn
ncaen il get dmaged
RecifexT iSa deice hich is csed for
Convertin aternathug Cunrentvoltage into direct Cusneat
Apptcatton c junction diode as a Rectier?
>all wave Rectiiex.
An altenating voltege s aggicd axoss adiade
Seie) oitk a load ReSistoY a pating Votege
01 affRar acIaS lood. aaly dusinge half celes
o Re ac inpnt duzing uAicA the cdzade isaxard
bialed Such xe ctifes is Called Half Jave
'xecifiex

iy Duringhe positive, halt Gcle ot e tnput te


Lohen Ais pos:ie aad Bis negative tken te
nder iard biased 'i enteTrsent
inpttc

dide D ander everSe biased. te nce the Cursent


Lond neSstor (R.
nus tke dkode Sent Cuseut durin posifiue
Load retlance
nce
Mente Dodc ats as
tene
biaed TeverSe s dode
D and bialed foroad
P,is Diade negalive BiS and pasitive sechen
A
inpatt oCycle hal tive Poss iy
wlorkintkegsDusing
Hure in
Sloun as
onnected
[Link] [Link]
Cente
AfB te the and tap Centre Befean 2aput
Ac
egual Provides hica cised Shomex
is ton
Constcflons
ectfer wave
sMFudl
Alave Full
t
>t
33 No P]
Page
Date
dsssmte
classnate
Date

Page

when A beComcj nejafie and B betones positive


iexse bialef and''stofulavd biased
thence D Schd Cuxent thxougk load vesistance.
Th the diode end tReCurent inbots

in-the Same dixztion4ence t siode octs


Las fatl oe fectfex.
entu-fap a)

ICene

2RL Out put


1i

at|
4

tur to tu to furtot

You might also like