DC005NG
Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications. D
Features： G
S
1) VDS=30V,ID=100A,RDS(ON)<4.2mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)
Symbol Parameter Ratings Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1
Continuous Drain Current-TC=25℃ 100
1
ID Continuous Drain Current-TC=100℃ 59 A
2
Pulsed Drain Current 360
3
EAS Single Pulse Avalanche Energy 250 mJ
4
PD Power Dissipation,TC=25℃ 90 W
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃
Thermal Characteristics：
Symbol Parameter Max Units
RƟJC Thermal Resistance,Junction to Case 2.5
℃/W
RƟJA Thermal Resistance,Junction to Ambient3 62.5
[Link]
— 1 —
DC005NG
Package Marking and Ordering Information：
Part NO. Marking Package
DC005NG C005N TO-252
Electrical Characteristics：(TC=25℃ unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V
IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=24V --- --- 1 μA
IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA
On Characteristics
VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 3 V
VGS=10V,ID=40A --- 3.6 4.2
2
RDS(ON) Drain-Source On Resistance mΩ
VGS=4.5V,ID=30A --- --- 7
GFS Forward Transconductance VDS=10V, ID=15A --- 28 --- S
Dynamic Characteristics
Ciss Input Capacitance --- 1950 2350
Coss Output Capacitance VDS=15V, VGS=0V, f=1MHz --- 320 --- pF
Crss Reverse Transfer Capacitance --- 240 ---
Switching Characteristics
td(on) Turn-On Delay Time --- 13 --- ns
tr Rise Time VDD=15V, ID=15A, --- 36 --- ns
td(off) Turn-Off Delay Time VGS=10V,RGEN=3.3Ω --- 43 --- ns
tf Fall Time --- 16 --- ns
Qg Total Gate Charge --- 42 84 nC
VGS=10V, VDS=24V,
Qgs Gate-Source Charge --- 3.9 --- nC
ID=20A
Qgd Gate-Drain “Miller” Charge --- 14 --- nC
Drain-Source Diode Characteristics
2
VSD Source-Drain Diode Forward Voltage VGS=0V,IS=30A --- --- 1.2 V
[Link]
— 2 —
DC005NG
trr Reverse Recovery Time 16 --- Ns
qrr Reverse Recovery Charge 5 --- nc
Notes:
Typical Characteristics： (TC=25℃ unless otherwise noted)
[Link]
— 3 —
DC005NG
[Link]
— 4 —