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ECD Note Complete

This is note fo electrical devices and circuits.

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upendradhami689
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17 views91 pages

ECD Note Complete

This is note fo electrical devices and circuits.

Uploaded by

upendradhami689
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
Chapter 1! Semiconductor Diode: Relerd on Tne elect ie eee denen elec iF eater yall the materials ved cs tnsulators Sem} conductors \n nokwe are Clacsif Grd conduc tors Material v ae igri Trswlatovs Sa Ai cory Jactors ! insulottee ig a matertal thare are chavactertzesl Avical canduchvi ty. Aer enanple y Gila Ss) guarte, er | por cefian , peikelli L@) mica » eto> The veatshuity level gh an insulate ok the order of 10° 40 tor? im. cov e} shown band structure of an Inswator ts as np lhe Were) belowd Bod shucture gta matertad defines the bard of eneggy Level Had On electyon can | Occupy: Vadance band ts ‘the vange ot elechen energy ushere the elect Yemain banded fo +he atom andes do mt contribute tb tre olechvic cLoment ane dle of tudor of elector encyges laher than Gerduction loand vs the Maer elevate under. the Valence bard ustare electr on Axe free to acc external vo lige source vest! Flew of chowe- The enevgy pand befoen the valance band andl Cenduction band is called fovbidden band gr ox fovibidelen ener} Gap: THis the ered yegui ved by an electron 4d mee Uction band - Reem Valence band +2 cm Beles INS 1p gale influence of Phencec onducvity of Insulador is poor - Even on «He oy cepplied electric Fetd i's Valonce band +e Canductier od conductors of aaivi ty Lom, efeoThe veal sen AY gp Peet o cach ofa £0 electe tempevature a modevial that pos ¢ts cone) pekoeen the incwlator £ Cenductor imi cénductoy nicdenial ties in the veng 83, absolute ¢ zevo( te: Zero kelvin ov aaa eee Yhis tem peradure, the valance band 9S Oot Energy to move fem Valante band 4o cenductisn feand. Tus Semicenducta acts as Fhawletbr cot absolute zevo. Hocev at notmal’ Yeom demperstture (25°C), same electrons (an eaailey Jump 30 conduction band due folowe eneyy GaP between, Valance band and cenduclisn ind Thus sernicenductars ave of contlubting eroadl eadment ever ok merma) Capavle ‘The ferlstarce of semi conductor decreas Yoorn Lemperachre Goith an Increase tntempereduve. Types of Semiconductor jehance GP sericanductor clecvenses voit Gh {nevene) + Achive te. hempe rake coPfictent gf vesistanes negative: Theg behave’ tike an insdackar ] J : oo Ven Lois temperate butt oc Bas Canduttor Gt Wig Lemperatures st Sh ( tre of terepe GF semiconductor gemicorductod ‘Ove "Germanium (Gre) LONE 50) & Tetlutriurn (Te) are Asoo, semict ‘ ik / | Tre mostly used c| Sele nium( _ tor ’ Praper Hes of SemlcendliCtor ae Liqhe vesistivity of gemicerductey depos gn illiueainasie ‘and decreases tn bighier surround as ial a. The vest sti eee con cfor depends on ee nitude of elecdric fietd K %. Serntconductoy ave non-linear clernents: 8 Corsi BYE to it. So tha vihen of Eth avy ob tne pertavalent mpi , Gk jhe mepunity adem form toval ent eed ee and one elector 1) ent teem & sufficient enegry 1s provided +e 4he forbidden band and ¢ rursee i eae Je for cating PA The conductivity oF Semnicendirctor chal ar Evauiamounto® Impuriie: eave be controlled. s| Cenduchu ty aie sericerducor bo conduction bodnd nie elechan, it satmounte seaches! te conduction band - La’ elecirens 19 conductisn bard oe veapensib Conduction cuscent oy the N-type Semicenductor have ex Shich age. in greater, humber tha pus hence, elections are, pacdar hey lepers alg Gearries tn Soar holes ave minority charge © semi cenductov xu CESS ot |Area ‘eleches| 9 that of holes era jers andl p- phaspevous conductor semécenducor Valent impurity Such cil / amount of phasphorus fs Added +o Sern cor ductor Ago Giey : ) ; ii) Fe typ Be ee anu Cee of M hiaiamount of Mivalent impos, i race tae ] j ‘Vent Zrnatt! amour i ee al has capability +o denote an? élechan 'Such, sent et tim, indium ov alumina Re qdded Sogn ma i er i iliury, 1 ae ct 1s called Nop 8 aka) arent. the esata at conductor Opyst) Hg cg Be I eden sie cxystes have capability 4° accept cwexc! 15 Called acceptor 0% oo ype forward diode vesistance py aly vetlelance dre meta) reer semi conductor disde specie Jily designed dor the GEE susitching purpose Ht ct cP mnetal and Se mnicenductor® eeqten: =F We conductivity metals hee silver, In one stele anchn~ty Pe ey Gchottky diode He go's. ov platinum é ie “used ove used eraicencluck fn Qnother s' rt 4 is a unipolay diode. Tt is because dueto the rmoverent of only use the eeclen| beca also caved hot corvier diedé cvoss the mete! Sem! “8 gain high enegy te iceoductor pen have generation of N juncto d 9! one duclooiae Carriers (free eleckens! at DP tupe F ype a holes, at al Sanicarisclat he fee eters hich gain ena fram the exterra voltages ave arc Tease greeter, Velocities Et the voliage applied $0 she (PAN fupetion disde t= A shoe value} the free decto ns gain large, amaunt)eP eneray and trayel oa vew ns g Fi eae ‘¢ high Spee ciyete incvensed 40 9 higher When these ‘hgh speed free electrars callide with He alan diene ov valence electans, they Wansfer her kinetic lenegy te the, valence elechen’! The Valence ele chen, tohich ger enough energy. From the hgh gee free |) electron will breaks +he boncling with the paxertatam The point at cahich a free the valen and beceme a free electron the free electen Jeft 1's called a hole- Thus) Elechon at the conduction Wane! and a hele of C2 band is genevaied aa pol Likwise, a lage nurnber enevated ith the food Wy yous plicediin loswe number of rnin se Nurnbey of mney on. Tn other coovdsy nt deshoys the minority Case exs coh breakdepon breakdown ov ed avalanche breakdown. 18 Ge 2) Zener Abveakdocsnt bik “The Zener. bveatdown occurs 1) hee anem junction diodes. Heavily, doped! PN jurcHan ander ave Narre c depletion vegin applred ‘en. the nartois dep)etan| Tf revevse voltage immobile jens in the depletion P-N junction diode, the region gars eneey from the external Voltage. Hence, As Gf the immobile: tens. ine veases LS) wieatrie field electric field SP the narrotodeple a vesult, the overall len vegien junction |alieds Fre the voltage applied en The P- 1a ced ey higher value a veg Stang ele *< jn pris narrew depleHen veg fon tela gf narroe. depletion Vey ten, is tncve veld is ult This stveog electric pplies on the i f fern Hh Jence them fre trem the va valence etectsms and pulls force band erated 95] acters ane) holes ave cs Ino t! t Likecotge 6 layge number 6F miner iiaaaas generated in the coo ee Ab Thus, fee el poly -S ae ras Mn vevense (VO Ye poirt, a Sra) Increase auses: Sudden vise tn reners® ceovrent Pe Nerse (Cutt eee ai p- Njenction- ald of the ravvow causes the functor ‘s callee pletion breakdown ; ble and Reaeraet yp ft ee cs! (Aoi ed vel Bian just starts fe Flo tes Bi totais load): Ze 12% CR Hee Sov Ry mar: mow! se prust have Simin Rone Bepreroeey poust hove sible poner Te FIs ynaximum ie. New eM re Vien Go We Yep uive $e minimum velleg fT min Temax = Bd ts prov tdedb: kl Ere ven £6 Np 2Nzgnen Vi 2 Vi Soin icy-e-¢ moretmum Value of Vi these, exctet Via Ve) Nm & 820.1 3 Nien = Vz CR Rs) lon ps cobKtimumV) wh ee = yours value oP tnpee vol ey e the cliode vot Wt candecedt Pra ximute? Evsarent, Toman Cares Te. ts moximum anda I constant URL ?S egret BN, ts coristant so Fits can Stank? ee ay Hg as J it, Se e-¥ Temay 1 £2 =Te max Keeping % = est Terman’ Fz mort Te f (oa 7 qned tn Badashertye Pe C27 we hen both Vi BRL are fe calculate the range ot Re te Rite the cavcent ‘lec n ra sen ae osha fsel ths 289) nay ea sf Eo Bago ar DEBNimany NEMO GR ; Fro Hen fos in the diode becames ON when the voltege across it ts greater one cri chavg © farrier oe Glos! So pthe mince! ty le tollectox = tp -base j¥ si ot BEST: Ty there ave +00 ee of ast. NPN “Warsistor - , e Joase 1S sandesiched bekseen re iy eee pe collector, then the eae yer ts, know inch. Tt eorsis carriers ped #4 gan collect is wider ho ernitier It is pan, erat tre { oot a asus j 3 tae se YPN Pte ei ie) cahdwiched woedwen Pogps unc ons namely Emi te BIT consist of2PN (e8) 3 Sunction and collector Base (CO), junct ag N-type base fs. s } Bee che Paihay lease gren’ aidvansistor 15 4h eee ae oe aaa « : beans isto Ne cam aeeene Tn BIS cussent 1S conducted due “to 160 ho lea, so tE } As EB jpncion js fovved biased depletion re! Junction becemes narrows Once: the applied vo its barrier renal i [ 1 Charge cov ety ts named Coxceeds | the base fren =the emitter ‘ & v wn a —P a ie <4, | Vee PNO transistor miter -Base Sunchig BqUIU J actisn | fovisard- Bia Sed ard collector Vee ‘Ct diagram fox-shey g Sfp chenacter ste FF zd Chovacter (site cue Qo abe CE con 6 oxabion C& conGiistoetion g input characterishes: Graph ot Vye Ve jTe for Constant Ye Strailax to that of Fovanrd biased disde, B As Vee ts Incveasd)tg clecreaes, Ihe Yeasen bs: thet 5 Vee increases) the collector — base reverse veltag e Creases gna effective base width! 8 veduuced As g sult tecombination in base is veduced % baker TE boin 66 40853 ‘Shen pis” mode st opevodion tscated Satur MThvee vepiens oF operation: 1) Active’ veg! so? Wren EB jnch om, ts Ffoyisard 2 CR junction os ve Biased fb ts triackve eaten: Fox ampli Ficat ah Purp tne fransis for must be operated tn active vepion b)s atuvation veg) on Fem both ¥ne 6 ACB juncHen aye forests = biased J on tronsietov operates in saburcasion “agion ) Cut-oFF veqion nen both Eb ¥c® junction ave veverse piased/ then Ransistox -perotesyin cab OF ~egian B) Carman 8° cum Oren es qe FP chaPNAEris Hes Conhig oetion fo x cialeanfequccasisn put Chavacterishes: cone S Plot belwen Te ard Nac fv conctant Voltgy © ee t pe for a given Enpt voltage Vor v7” pe Suen Be ea ndicdiia bie Wisco eg 2 ie iigher value a Ce junction i forward bias emitter C702 c incresse® & collector Base vatae ts applied Ma Te. As Vea increases Mecorn DN #0, 10N) the Fe alae ive Pees, which is due ¥ the yaluction oF Bs ney ‘fer’ . é i a ¥ 5 1 2 on pin which Fe SNE fe hr veer? isdor isi saturation | deans! jsapsaly Base wid4.

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