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Diode Breakdown and Temperature Effects

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19 views39 pages

Diode Breakdown and Temperature Effects

Uploaded by

coolboygaming1508
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

Analog Electronics

Majority and Minority Carriers


The contributing component of diode equation for each region of can be described with increased clarity:
Breakdown Region
There is a point where the application of too negative a voltage
with the reverse polarity will result in a sharp change in the
characteristics.

The current increases at a very rapid rate in a direction


opposite to that of the positive voltage region. The
reverse-bias potential that results in this dramatic
change in characteristics is called the breakdown
potential and is given the label VBV .
In the reverse-bias region the reverse
current of a silicon diode doubles for
every 10°C rise in temperature.

The reverse breakdown voltage


of a semiconductor diode will
increase or decrease with
temperature.
IDEAL VERSUS PRACTICAL

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