AP20WN170J
Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Rg & UIS Test D BVDSS 200V
▼ Simple Drive Requirement RDS(ON) 170mΩ
4
▼ Lower Gate Charge ID 18A
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP4604 seriesseries
AP20WN170 are from
are from
Advanced
AdvancedPower
Power
innovated
innovated
design
design G
D S
and silicon process technology to achieve
achieve the
the lowest
lowest possible
possible on- TO-251(J)
on-resistance
resistance andand
fast fast
switching
switching
performance.
performance.
It provides
It provides
the designer
the
designer with anefficient
with an extreme extremedevice
efficient
for device
use in aforwide
userange
in a wide
of power
range of power applications.
applications.
The TO-220 package is widely preferred for all commercial-
industrial
The straightthrough holeTO-251
lead version applications.
package is The
widelylowpreferred
thermalfor all
resistance and low package
commercial-industrial through cost
hole contribute to the worldwide
applications.
popular package.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol Parameter Rating Units
VDS Drain-Source Voltage 200 V
VGS Gate-Source Voltage +20 V
4
ID@TC=25℃ Drain Current, VGS @ 10V 18 A
1
IDM Pulsed Drain Current 72 A
PD@TC=25℃ Total Power Dissipation 83.3 W
PD@TA=25℃ Total Power Dissipation 1.13 W
3
EAS Single Pulse Avalanche Energy 50 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
1
201703071
AP20WN170J
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 200 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=9A - - 170 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=20V, ID=10A - 16 - S
IDSS Drain-Source Leakage Current VDS=160V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
Qg Total Gate Charge ID=18A - 27 43.2 nC
Qgs Gate-Source Charge VDS=160V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.5 - nC
td(on) Turn-on Delay Time VDS=100V - 8 - ns
tr Rise Time ID=18A - 28 - ns
td(off) Turn-off Delay Time RG=10Ω - 40 - ns
tf Fall Time VGS=10V - 52 - ns
Ciss Input Capacitance VGS=0V - 1040 1664 pF
Coss Output Capacitance VDS=25V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 26 - pF
.
Rg Gate Resistance f=1.0MHz - 2.4 4.8 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=9A, VGS=0V - - 1.5 V
trr Reverse Recovery Time IS=18A, VGS=0V - 120 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 580 - nC
Notes:
[Link] width limited by Max. junction temperature.
[Link] test
[Link] Tj=25oC , VDD=50V , L=1mH , RG=25Ω
[Link] that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP20WN170J
50 32
o
T C = 25 C 10V T C =150 o C 10V
8.0V 8.0V
40 7.0V 7.0V
6.0V
ID , Drain Current (A)
ID , Drain Current (A)
24
6.0V
V G =5.0V V G =5.0V
30
16
20
10
0 0
0 4 8 12 16 20 24 0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
180 2.8
I D =9A
I D =9A
T C =25 o C
170 2.4 V G =10V
Normalized RDS(ON)
RDS(ON) (mΩ)
160 2.0
150 1.6
.
140 1.2
130 0.8
120 0.4
2 4 6 8 10 -100 -50 0 50 100 150
V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
18 2
I D =250uA
16
1.6
14
Normalized VGS(th)
12
IS(A)
1.2
10
8 T j =150 o C T j =25 o C
0.8
4
0.4
0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP20WN170J
f=1.0MHz
12 2000
I D =18A
10
V DS =160V
VGS , Gate to Source Voltage (V)
1600
C (pF)
1200
6
C iss
800
400
2
C oss
C rss
0 0
0 10 20 30 40 0 40 80 120 160 200 240
Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
1000 1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
Operation in this area
limited by RDS(ON) 0.2
ID (A)
10
10us
0.1
0.1
1
100us . 0.05
PDM
t
T
0.1
1ms 0.02
T C =25 o C
0.01 Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
10ms
Single Pulse Single Pulse
0.01
DC 0.01
0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1
V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
2 30
I D =1mA V DS =20V
1.6
ID , Drain Current (A)
Normalized BVDSS
20
1.2
0.8
10
T j =150 o C
o
0.4 T j =25 C
T j = -55 o C
0 0
-100 -50 0 50 100 150 0 2 4 6 8
T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V)
Fig 11. Normalized BVDSS v.s. Junction Fig 12. Transfer Characteristics
Temperature
4
AP20WN170J
500 120
o
T j =25 C
100
400
PD, Power Dissipation(W)
RDS(ON) (mΩ)
80
300
60
200
V GS =10V 40
100
20
0 0
0 4 8 12 16 20 0 50 100 150
I D , Drain Current (A) T C , Case Temperature( o C)
Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation
Resistance
5
AP20WN170J
MARKING INFORMATION
Part Number
20WN170
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence