Ve + E C Vp + B
B Transistor
Table
CC schematic
CECircuit
CB models 9.1
Tib le
Ve E ic
C
E Ve C
B C +
Vb
+^ Vb
B Ve C AB
AEhib e
hyc'e
ib
_hieconfigurations
Hybrid
model o
CB CC CE
Thfcb
hyole,
hoc
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C Ve E¶ le E C
B Ve C) V
equations y-diin their
hjblet
h,sve
icVe= i, V V,
hybrid
=hole
hobve t == =hiels
hfli hiclb
CB CC CE
+t +
hocVe hpeve hyeve
Basics of Hybrid T Model of BJT
- It isan Equivalent model of Transistor.
It is widely used after the hybrid Model and re Model of Transistor.
In the Hybrid Model, parameters are generally defined for any operating conditions.
In the re Model, parameters are defined by actualoperating conditions.
HParameter and re Model are used with low-frequency AC Analysis.
Hybrid t Model is used with high-frequency AC Analysis, Hybrid n Model can also
be used with low-frequency AC Analysis with some modifications in the high
frequency model.
Hybrid Model of BJT for Common Emitter Configu
Hybrid T Model of BJT for Common Emitter Configuration
b
+ +
+
b
Vce Vee Yce
The above circuit is a full Hybrid Model.
The Above Model applies to high-frequency AC Analysis.
C, is used to represent the effect of Early effect, it is there in terms of
few pf.
C is diffusion capacitance and it represents minority carrier storage in
the base region, it is there in terms of few pF.
, is resistance due to base contact. It is very small.
r, isresistance between base &emitter terminals. r, =(1 + B)ra
- , isresistance between base &collector terminals. It is large.
- , is resistance between collector & emitter terminals. It is large.
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lous reis tanq q a stoye (a load ) can e re fleted
loud res tane o de þrevious stoye.
sed wheu dh load is male
Tra fmey louplig is
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h piy caindig (P) as colleetov load, sile Jecondog
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Cascode Auplifier
* CE tcB Auplifier key Points
Commou
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(Bw)
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Auplifi
@ Wide band
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As
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Cascade oY Cs -ca
Alublifer S3T
Connec tioy Aublifier fT
Circoit Vee
OJBis Used as Vedeo fre Auplife
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is -swallhie
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Ci
f Cas code Auhlfer Ju
RE
P, CE ConfigUxatoy Hewse lwoh'- of
Advantages:
1. Higher bandwidth by reducing
the Miller effect.
2. Improved gain with better
gain-bandwidth product.
3. Higher output impedance, useful
for high gain.
4. Better stability and linearity for
high-frequency signals.
Limitations:
1. Complex design and extra
biasing circuits.
2. Lower output voltage swing,
limiting signal amplitude.
3. Higher power consumption.
4. Takes up more physical space in
circuits.
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