For =180o, homogeneous nucleation
For island-layer growth
Gvis –ve and is +ve
Single Crystalline, amorphous or polycrystalline
f>0, film is in tension f<0,
film is in compression
EVAPORATION
The equilibrium vapor pressure of an element, Pe, is given by
For compounds, things are more complex.
Laser Ablation
• Excimer KrF, lambda = 248 nm; t = 25 ns; Ep = 100 mJ
• Laser Nd:YAG, lambda = 1064, 532, 355 nm; t = 10 ns; Ep = 550
mJ
The advantages:
- Easy and Versatile (external source)
- Target of any material
- High deposition rate (~ 0.1 nm/pulse)
- Multi-layer deposition
- Stoichiometric deposition congruent (the target stoichiometry is
transferred)
- High energy of the produced particles (even more than 10 eV)
- Possible temperatures lower than with other techniques
- Possible to correct the stoichiometry through reaction gases
MOLECULAR BEAM EPITAXY (MBE)
Main attributes of MBE
DC and RF Sputtering
Differences between evaporation and sputtering
Chemical Vapor Deposition (CVD)
Atomic Layer Deposition (ALD)
SELF-ASSEMBLED MONOLAYERS
Fig. 5.19. A typical self-assembling surfactant molecule consisting
of three parts: surface group, alkyl or derivatized alkyl group, and
surface-active headgroup.
Fig. 5.21. Alkylsilanes with more than one chloride or alkoxy
groups, surface polymerization capable of forming silicon-oxygen-
silicon bonds between adjacent molecules as commonly invoked
deliberately by the addition of moisture.
LANGMUIR-BLODGETT METHOD
Fig. 5.23. Schematic showing the formation of Langmuir films,
which denote the molecular films at the water-air interface, a drop of a
dilute solution of an amphiphilic molecule in a volatile solvent, such
as CHC13, is spread on the water-air interface of a trough.
Fig. 5.24. The more conventional vertical deposition
method for the formation of LB films on substrates.
Fig. 5.26. Schaefer’s method useful for the deposition of very rigid
films, in which, a compressed monolayer is first formed at the
water and air interface, a flat substrate is placed horizontally on the
monolayer film.
ELECTROCHEMICAL DEPOSITION
SOL-GEL DEPOSITION
DIP COATING OF A SOL
where is the viscosity, Uo
the withdrawal speed, r the
density of the coating
sol, and cl is a constant.
SPIN COATING OF A SOL
where rA is the mass of volatile solvent per unit
volume, rAo its initial volume, the angular velocity,
h the liquid viscosity, and e the evaporation rate,
which is related to the mass transfer coefficient.