NAND & NOR
17 October 2024 11:31
Characteristics NOR Flash NAND Flash
Architecture Parallel Serial
Access Mode Random Access Sequential Access
Performance Slower (100-200 MB/s) Faster (1-5 GB/s)
Applications Firmware storage, Bootloaders, BIOS Solid-state drives (SSDs), Memory
storage, Configuration storage cards, USB flash drives
Endurance Higher (100,000 to 1 million write Lower (1,000 to 10,000 write cycles)
cycles)
Cost More Expensive Less Expensive
Memory Cell Each cell connected to a bit line and a Memory cells connected in a series
Connection word line
Code Execution Can execute code directly from flash Typically used for data storage, not
memory code execution
Read Speed Typically 100-200 MB/s Typically 1-5 GB/s
Write Speed Typically 100-200 MB/s Typically 1-5 GB/s
Erase Speed Typically 1-10 ms Typically 1-10 ms
Program Speed Typically 1-10 μs Typically 1-10 μs
Cell Size Larger Smaller
Power Higher Lower
Consumption
Voltage Typically 3.3V or 5V Typically 1.8V or 3.3V
Interface Typically asynchronous or synchronous Typically asynchronous or synchronous
Error Correction Typically uses ECC (Error-Correcting Typically uses ECC (Error-Correcting
Code) Code)
Bad Block Typically uses bad block management Typically uses bad block management
Management
Wear Levelling Typically uses wear levelling Typically uses wear levelling
Security May include security features like May include security features like
Features encryption and secure boot encryption and secure boot
Operating Typically -40°C to 85°C Typically -40°C to 85°C
Temperature
Storage Typically up to 1 GB Typically up to 1 TB or more
Capacity
Physical Size Typically larger Typically smaller
Package Type Typically TSOP (Thin Small Outline Typically TSOP (Thin Small Outline
Package) or BGA (Ball Grid Array) Package) or BGA (Ball Grid Array)
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